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fundamental problems of optoelectronics and microelectronics iii

ISBN: (纸本)0819467278

The proceedings contain 162 papers. The topics discussed include: evaluation and testing of semiconductor laser reliability in optic system;theoretical study of transient thermal nonlinear refraction induced by nonlinear optical absorption;third-order nonlinear optical properties and optical limiting property of metallonapthalocyanine;nonlinear errors of passive homodyne polarized laser interferometer;interaction of partially coherent laser radiation with matter;conoscopic methods of optical crystal research;a novel all-fiber self-organization coherent erbium-doped fiber laser;thermal behavior of thin metal films irradiated by ultra-short pulse laser;laser generation and reception of acoustic ultrasonic waves in solids;transmission characteristic of photonic crystals coupler;study on trap states in polyvinylcarbazole by thermally stimulated current spectrum;and new self-developed holographic media-dichromated gelatin with isopropanol.

关键词： Optical systems

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Proceedings of SPIE - fundamental problems of optoelectronics and microelectronics iii

Proceedings of SPIE - Fundamental Problems of Optoelectronic...

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fundamental problems of optoelectronics and microelectronics iii

ISBN: (纸本)0819467278

关键词： Optoelectronic devices

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II Asian - Pacific conference on fundamental problems of Opto- and microelectronics

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QUANTUM ELECTRONICS 2002年第11期32卷 1033-1034页

作者： Zavestovskaya, IN Russian Acad Sci PN Lebedev Phys Inst Moscow 119991 Russia

A review of papers reported at II Asian-Pacific conference on fundamental problems of Opto- and microelectronics is presented.

关键词： optoelectronics microelectronics laser physics

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Health monitor on asphalt pavement of highway based on FBG technique

Health monitor on asphalt pavement of highway based on FBG t...

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conference on fundamental problems of optoelectronics and microelectronics iii

作者： Hu, Qingli Zhou, Zhi Li, Hui Ou, Jinping China Earthquake Adm Inst Engn Mech Harbin 150080 Peoples R China Harbin Inst Technol Sch Civil Engn Harbin 150090 Peoples R China Dalian Univ Technol Dalian 116024 Peoples R China

ISBN: (纸本)9780819467270

Long lasting service performance has been one of the most important qualities in high way engineering. In this paper, one type of strain sensor used for measuring and monitoring of asphalt pavement is presented and relevant numeric analysis is introduced. Application of this kind of sensor in an express highway shows that the sensors based on Fiber Bragg Grating technique and their embedding craft are applicable.

关键词： Sensors Fiber Bragg gratings Finite element methods Temperature sensors Fiber reinforced polymers Civil engineering Earthquakes Mechanics microelectronics optoelectronics

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Invariant correlation filters design in problems of image recognition

Invariant correlation filters design in problems of image re...

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2nd Asia/Pacific conference on fundamental problems of optoelectronics and microelectronics (APCOM 2002)

作者： Evtikhiev, NN Ivanov, PA Starikov, RS Moscow MV Lomonosov State Univ Engn Phys Inst Moscow Russia

Authors made a research in computer modeling of invariant correlation filters design. The results of modeling shows good perspective of such approach for solution of image recognition problems. The aim of research is ... 详细信息

ISBN: (纸本)081944989X

关键词： correlation filter MACE filter invariance

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Proceedings of SPIE: fundamental problems of optoelectronics and microelectronics

Proceedings of SPIE: Fundamental Problems of Optoelectronics...

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fundamental problems of optoelectronics and microelectronics

This Volume 5129 of the conference proceedings contains 45 papers. Topics discussed include fiber optical communication systems and fiber optical sensors, optical information processing and holography, laser physics a... 详细信息

关键词： Optoelectronic devices

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Influence of a weak external electric field on the bremsstrahlung during collisions between the electrons falling on potential barrier of this field and a charged particle

Influence of a weak external electric field on the bremsstra...

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Forth Asia-Pacific conference on Fuundamental Problem of optoelectronics and microelectronics II

作者： Krylov, VI Pivkin, VV Khabarovsk State Pedag Univ Khabarovsk 680000 Russia

ISBN: (纸本)0819458481

The differential cross section for bremsstrahlung during collisions between electrons and a charged particle in an external quasi-uniform and quasi-steady electric field may differ significantly (even when this electric field is far below the atomic field) from that in the absence of an external field. This is explained by the interference of the scattering charged particle while they are reflected from the potential barrier of the external electric field. In this paper, the influence of a electric field of the crystal surface on the bremsstrahlung during collisions between the electrons falling on a potential barrier of this field and a charged particle, when additional interference of the electrons in their initial states appears, was considered. The differential cross section for the bremsstrahlung in this electric field was calculated using the nonrelativistic Born approximation and the wave functions describe the current density of electrons in an external electric field or the electric field of the crystal surface.

关键词： Electrons Particles Crystals Photon polarization Scattering Numerical analysis Polarization microelectronics optoelectronics Solids

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Luminescent chemosensors for amines and ammonia based on Eu(iii) chelate complexes

Luminescent chemosensors for amines and ammonia based on Eu(...

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15th Asia-Pacific conference on fundamental problems of Opto- and microelectronics (APCOM)

作者： Sergeev, Alexander A. Voznesenskiy, Sergey S. Petrochenkova, Nataliya V. Shishov, Alexander S. Leonov, Andrei A. Emelina, Tatiana B. Mirochnik, Anatolii G. Kulchin, Yuri N. Inst Automat & Control Proc FEB RAS 5 Radio St Vladivostok 690041 Russia Far Eastern Fed Univ 8 Sukhanova St Vladivostok 690950 Russia Inst Chem FEB RAS 159 Prosp 100 Letiya Vladivostoka Vladivostok 690022 Russia

ISBN: (纸本)9781510608535;9781510608542

Here we report a novel luminescent sensor for amines and ammonia based on Eu(iii) tris-beta-benzoylacetonate complexes obtained in various conditions. It has been revealed that interaction of Eu(iii) tris-beta-benzoylacetonate with analyte vapor results in increase of the Eu(iii) luminescence intensity. Exposure of Eu(iii) complexes to ammonia and methylamine vapors results in a rapid increase of the emission and excitation spectra intensity and a rapid recovery, almost to the initial value, when the sample is exposed to air. Moreover, luminescence decay time value of Eu(iii) complexes is in dependence on analyte presence and increase in ammonia atmosphere and decrease under purging of pure air. The dependences of sensor response features upon preparation conditions were shown. The mechanism of the analyte vapors effect on Eu(iii) luminescence intensification has been suggested using the data of IR spectroscopy and quantum chemistry calculations. The mechanism of luminescence sensitization consists in bonding of an analyte molecule with a water molecule into the coordination sphere of Eu(iii). As a result, the bond of a water molecule with the luminescence center weakens and the blockage of the quenching of luminescence on OH-vibrations takes place. The obtained data can be used for development of sensor materials with selective optical sensitivity to ecologically harmful vapours of organic and inorganic compounds.

关键词： luminescent sensors chelate complex amines ammonia

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Application of modified Kohonen's network to optimization problems

Application of modified Kohonen's network to optimization pr...

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fundamental problems of optoelectronics and microelectronics iii

作者： Shimizu, Toshihiro Graduate School of Engineering Kokushikan University

ISBN: (纸本)0819467278

The traveling salesman problem, which is one of combinatorial optimization problems, is solved by using two different methods: the Hopfield type network and the Kohonen type network. In the Hopfield type network the energy function is defined, whose global minimum must be searched. The energy is shown analytically to decrease monotonically. The time behavior can be discussed analytically, because the input-output function is piecewise linear. The network can always find the optimum solution. In the Kohonen type network the modified version is proposed, in which the mechanism of choice of winner neuron is included automatically in the time evolution equation of the internal state. In usual Hopfield's network N × N neurons are needed to solve TSP with TV cities. It is shown that only N neurons are needed in modified Kohonen's network, which means that the network has a great advantage in the case of the application to TSP with higher number of cities or in the application to more complicated combinatorial optimization problems. The relation between the Hopfield type network and the modified Kohonen type network is discussed.

关键词： Traveling salesman problem

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Lateral interdot coupling among dense ensemble of InAs quantum dots grown on InP substrate observed at cryogenic temperatures 20

Lateral interdot coupling among dense ensemble of InAs quant...

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20th International conference on Electron Dynamics in Semiconductors, optoelectronics and Nanostructures (EDISON)

作者： Marynski, A. Syperek, M. Pieczarka, M. Gawelczyk, M. Misiewicz, J. Liverini, V. Beck, M. Faist, J. Sek, G. Wroclaw Univ Sci & Technol Fac Fundamental Problems Technol Dept Expt Phys Lab Opti Spect Nanostruct Wybrze Wyspianskiego 27 27 PL-50370 Wroclaw Poland Wroclaw Univ Sci & Technol Fac Fundamental Problems Technol Dept Theoret Phys Wybrze Wyspianskiego 27 27 PL-50370 Wroclaw Poland ETH Inst Quantum Elect Wolfgang Pauli Str 16 CH-8093 Zurich Switzerland

The lateral interdot coupling is investigated in high density (similar to 10(11) cm(-2)) self-assembled InAs quantum dots (QDs) grown on an InP substrate. Two types of structures are selected for this study, in which QDs are embedded into an InAlAs matrix, forming nearly twice stronger confinement for an electron and a hole than expected for an InAlGaAs counterpart. Resonantly injected low carrier population in these families of QDs gives very different spectral and temporal response in the temperature range of 5-30 K. While InAs/InAlGaAs QDs show monotonic temperature quench of photoluminescence (PL), the process seems to be ineffective in the family of InAs/InAlAs dots. Moreover, the PL decay traces for InAs/InAlGaAs QDs reveal a two-exponential decay as compared to a mono-exponential one observed for InAs/InAlAs dots. While a short decay component of <= 1.9 ns has been attributed to recombination of an electron-hole pair confined in the dot, the long one of >2.4 ns, observed exclusively for InAs/InGaAlAs QDs, is attributed to recombination of spatially separated electron-hole pairs formed due to carrier exchange between adjacent dots.

关键词： iii-V semiconductors

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