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检索条件"任意字段=Conference on High-Power Diode Laser Technology and Applications XII"

共 1429 条记录，以下是1-10 订阅

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high power Coherent diode Arrays 22

High Power Coherent Diode Arrays

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conference on high-power diode laser technology Xxii

作者： Rothenberg, Joshua E. Goodno, Gregory D. Northrop Grumman Space Syst 1 Space Pk Los Angeles CA 90278 USA

ISBN: (纸本)9781510669949;9781510669932

The efficiency and reliability of high power (multi-kW) fiber lasers has revolutionized material processing and other applications. However, diode lasers offer the promise of even higher efficiency, yet scaling to high power while maintaining good beam quality remains a significant challenge. We discuss the challenges, advances, and potential future of this technology.

关键词： diode Arrays Coherent Combination high power diodes

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Advance on high power and high brightness diode laser modules for pumping and direct use applications 22

Advance on high power and high brightness diode laser module...

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conference on high-power diode laser technology Xxii

作者： Ding, Liang Liu, Peng Chen, Huawei Huang, Liangjie Xinghan Laser Technol Co Ltd B4 Block39 Haoye Rd Shenzhen 518000 Peoples R China

ISBN: (纸本)9781510669949;9781510669932

Industrial material processing represents a significant application for lasers. In this paper, we present our work on high power diode laser (DL) modules for the high brightness fiber laser pumping and direct diode laser integration. Together with state-of-the-art 915 nm and 976 nm laser diode (LD) single emitters from Coherent, we have realized an optical power 1200 W DL output (26 A driving current) with a 135 mu m core-diameter fiber with a numerical aperture (NA) of 0.22 (power ratio of NA 0.19/0.22 >95%). A dual wavelength combining technique was employed, yielding an fiber output brightness of 74 MW/(cm(2)center dot str). The fiber was end-capped to decrease the energy density on the optical coating. By adopting the same fiber end-capping optical coupling and wavelength combining techniques, a higher power DL module coupling 1800 W optical power into a 220 mu m end-capped fiber was successfully fabricated. The module achieved a favorable balance between power and brightness, and its direct application potential was certified through spot welding of thin stainless steel plates.

关键词： diode laser high brightness high power wavelength combining fiber laser pump direct diode laser

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.Advances in Manufacturing technology for Low Cost QCW diode laser Stacks Suitable for high Energy Pumping applications 22

.Advances in Manufacturing Technology for Low Cost QCW Diode...

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conference on high-power diode laser technology Xxii

作者： Barnowski, Tobias Vethake, Thilo Atwater, Katie Gong, Tim Razavi, Reza Zanghi, Eric Zhang, Ping McDougall, Stewart TRUMPF Photon 2601 Route130 S Cranbury NJ 08512 USA

ISBN: (纸本)9781510669949;9781510669932

We report a novel approach for the assembly of monolithic diode laser stacks with up to 56 laser diode bars at 0.48mm pitch. These stacks are based on 940nm laser bars AuSn soldered on CuW-submounts. By joining the 56 bar-on-submounts (BoS) using an electrically conductive material the complete continuous stack is formed. A robot is used to load these BoS into fixtures for the bonding process. We show the attachment of this monolithic stack to an insulated micro-channel cooler using electrically insulating bonding material to complete the laser module. Use of the novel bonding materials at lower joining temperatures, compared to conventional soldering processes, results in a stack assembly with lower induced stress which allows monolithic stacks with higher number of elements. We demonstrate peak power above 500W per bar at 0.3% duty cycle and 500A peak current with an average junction temperature of 45 degrees C, with over 29kW total peak power. Analysis of the dynamic temperature behavior within the pulses is presented using fast spectral measurements and simulation along with initial reliability test results.

关键词： QCW diode laser Stack backplane cooling secondary sources low-cost mounting

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Advancements in high brightness tapered diode laser amplifiers 22

Advancements in high brightness tapered diode laser amplifie...

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conference on high-power diode laser technology Xxii

作者： Campbell, Jenna Labrecque, Michelle McClune, Kevin Kudryashov, Igor Ebert, Chris Boelen, Sander Burke, Elliot Liu, Thomas Garrett, Henry Larkins, Matthew Kinney, Sarah Chu, Allen Grant, Hannah Morrison, Gordon Johansson, Leif Mashanovitch, Milan Leisher, Paul Freedom Photon LLC 41 Aero Camino Santa Barbara CA 93117 USA Luminar Technol Inc 2603 Discovery Dr 100 Orlando FL 32826 USA

ISBN: (纸本)9781510669949;9781510669932

high brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 1500 - 1600 nm wavelength band could enable compact, direct diode solutions with performance metrics that previously could only be met by fiber-based lasers or solid-state laser systems. We report on high power, high beam quality diode lasers at 1550 nm based on a tapered chip architecture. We have demonstrated >5 W of continuous wave output power at room temperature, with a slow axis beam propagation factor M-2 of 1.1, corresponding to a slow axis linear brightness of 9.2 W mm(-1) mrad(-1) [1, 2]. We have also demonstrated a fully packaged watt-class single mode fiber-coupled semiconductor optical amplifier (SOA) based on this technology. This package delivers >30 dBm (1.2 W) ex-fiber saturation output power [3], ten times higher saturation power than the prior state-of-the-art [4]. This result is achieved with an input seed power of 30 mW (similar to 15 dBm), corresponding to an overall gain of similar to 16 dB. To demonstrate the functionality of the SOA, we have carried out linewidth measurements and data transmission measurements. These tapered lasers and amplifiers offer great potential benefit for many pumping and direct use applications.

关键词： high power diode lasers high brightness sources tapered diode lasers semiconductor optical amplifiers

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high brightness long lifetime 650 nm single-mode laser diodes for display, printing, and quantum applications 22

High brightness long lifetime 650 nm single-mode laser diode...

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conference on high-power diode laser technology Xxii

作者： Ulkuniemi, R. Schramm, A. Vilokkinen, V. Nikkinen, J. Uusimaa, P. Modulight Corp Hermiankatu 22 Tampere Finland

ISBN: (纸本)9781510669949;9781510669932

Individually addressable laser diode arrays (IAB) have been first demonstrated in near-infrared wavelengths, 8xx nm and 9xx nm, being mostly utilized in the digital printing industry. When moving towards visible wavelengths, other applications emerge. Examples of these are various display applications, including AR/VR products and head-up-displays. In addition, novel applications for narrow linewidth lasers have emerged in the field of quantum computing. In this paper, we present our latest single-mode visible array results in 650 nm region, showing up to three times improvement in brightness. In addition, we demonstrate faster stabilization of the device during life-test and reach stabler operating power of the devices. Life-tests have been run with automatic current control (ACC) mode with two different operating currents, showing only minor change in output power. high stability and reliable operation combined with our IAB design are enablers for further miniaturization of device design, scalable to 100 emitters and beyond, reaching e.g. higher resolution for printing and display applications. Additionally, such design and scalability can be integrated with on-chip gratings reaching DBR and DFB operation, which enables new capabilities in quantum applications.

关键词： individually addressable laser diode bars IAB single-mode laser diodes red spectrum AR/VR applications

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Novel high-power laser modules for drying applications based on VCSEL arrays 22

Novel high-power laser modules for drying applications based...

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conference on high-power diode laser technology Xxii

作者： Koerner, Roman Apetz, Rolf Conrads, Ralf Deppe, Carsten Gronenborn, Stephan Kolb, Johanna Sophie Moench, Holger Weidenfeld, Susanne Herper, Markus Groben, Dennis TRUMPF Photon Components GmbH Lise Meitner Str 13 D-89081 Ulm Germany

ISBN: (纸本)9781510669949;9781510669932

We developed a new generation of high-power laser modules for laser drying in battery electrode fabrication. Low power densities and homogeneous heating with full system efficiencies > 50% is within the record system efficiencies offered today. Moreover, simple scalability of the illumination profile and highly standardized fabrication techniques are the game changer benefits from using VCSELs as light source.

关键词： VCSEL VCSEL array high power laser multi-junction drying lithium-ion battery

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high power diode lasers for Quantum Technologies 22

High Power Diode Lasers for Quantum Technologies

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conference on high-power diode laser technology Xxii

作者： Bachmann, Alexander Sivers, Moritz V. Noelleke, Christian Scholz, Matthias Krug, Dennis Globisch, Bjoern Haering, Reto Kaenders, Wilhelm TOPTICA Photon AG Lochhamer Schlag 19 D-82166 Grafelfing Germany Eagleyard Photon GmbH Rudower Chaussee 29 D-12489 Berlin Germany

ISBN: (纸本)9781510669949;9781510669932

After the discovery of quantum mechanics in the early 20th century, lots of progress was made in using quantum effects. Many applications became part of everyday's life. Today, we are at the beginning of the second quantum revolution, that will not only use quantum effects indirectly, but aims at controlling quantum states and using this for a variety of new applications such as quantum computing, information processing, sensing and metrology. The laser, a tool from the first quantum revolution, will play a major role. Many quantum systems based on optical transitions, such as single atoms, ions or artificial atoms require lasers for the initialization and manipulation. Many of them demand "high-quality photons", that is a laser with stable frequency, low linewidth, high beam quality and single-mode frequency tunability. External cavity diode lasers (ECDL) meet these requirements. In addition, each quantum system requires a specific combination of wavelengths and power levels. TOPTICA Photonics offers the broadest wavelength coverage from 190 nm to 4 mu m based on direct diode lasers and filling the optical gap with frequency converted diode lasers. For a variety of applications, the output power of an ECDL in the range of a few mW up to approximately 150 mW is not sufficient. Using tapered amplifier chips in a master oscillator power amplifier (MOPA) configuration, commercially available output powers up to 4 W can be achieved while maintaining the properties of the master oscillator, i.e. single-frequency and single-spatial mode operation. R&D results of even higher output power of "high-quality photons" are presented.

关键词： quantum computing quantum information processing quantum sensing high-power diode lasers quantum technologies tapered amplifier MOPA ECDL

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Design and fabrication of optical waveguides for high-power density laser diodes for LiDAR applications 22

Design and fabrication of optical waveguides for high-power ...

引用

conference on high-power diode laser technology Xxii

作者： Diallo, T. M. Rodriguez, C. Denis, J. Desfonds, E. Boucher, J-F. Rouifed, M-S. Laser Components Canada Inc 195 Joseph Carrier Vaudreuil Dorion PQ J7V 4J1 Canada

ISBN: (纸本)9781510669949;9781510669932

LiDAR (light detection and ranging) technology has gained significant importance in various fields, including autonomous vehicles, environmental monitoring, and remote sensing. 905nm pulsed laser diodes are an essential component of a LiDAR system, which performance relies heavily on the laser power level and the characteristics of its emitted light beam. While the fabrication of high-power pulsed laser diodes is already mature, reliably combining a high-power level and a concentration of the laser beam (>90%) within a limited emitting width is an ongoing challenge. Another major concern is the development of facet coatings capable of withstanding the high-power density generated by these lasers. Facet degradation due to the excessive optical power leads to a reduced laser efficiency and a risk of increased failure rates Here, we have devised novel optical waveguide designs for triple junction 905nm lasers with optimized mode profiles and an effective confinement structure. This enables lasers to have a power density that is four (4) times higher than the traditional ones and, to confine most of the beam energy within an emitting width of less than 60 mu m. Furthermore, our research explores innovative approaches to facet coatings that enhance facet durability and minimize power-induced degradation. This results in exceptionally reliable lasers, as demonstrated by a thousand hours of life test data. Through this work, we have achieved significant advancements in design and fabrication of high-power laser diodes for LiDAR applications. Experimental results demonstrate improved power efficiency, reliable facet coatings, and effective energy confinement within the desired emitting width.

关键词： Pulsed-laser diodes high-power lasers waveguide LiDAR 905 nm broad area lasers

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high Temperature DBR lasers for Next Generation Quantum Sensing and Spectroscopic applications 22

High Temperature DBR lasers for Next Generation Quantum Sens...

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conference on high-power diode laser technology Xxii

作者： Young, Preston Plano, William Zhang, Weida Varnau, Grant Xiang, Annie Photodigm Inc 1155 E Collins Blvd 200 Richardson TX 75081 USA

ISBN: (纸本)9781510669949;9781510669932

Numerous next-generation quantum and spectroscopic sensing applications are emerging from the lab into portable commercial products. Next-generation spectroscopic sensors are used in applications including drug and compound identification in industrial analysis and quality control, non-invasive medical applications such as blood flow and glucose monitoring, as well as environmental sensing and monitoring. Quantum sensing applications include precision Positioning, Navigation, and Timing (PNT) instruments for use in GPS denied environments, as well as precision magnetometers and gravimeters for both ground and space-borne mission capability. The key component for each of these portable applications is a robust single frequency laser source. To minimize the laser power requirements, Photodigm has developed high operating temperature (HOT (TM)) Distributed Bragg Reflector (DBR) lasers in the GaAs/AlGaAs materials system for operation at key near-infrared (NIR) wavelengths. The HOT (TM) DBR reduces overall packaged device power consumption by operating at elevated temperatures by operating on wavelength without the need for Peltier cooling. The HOT (TM) DBR device eliminates the need for thermoelectric cooling by relying on a combination of laser self-heating and resistive heating to maintain a stable operating wavelength needed to probe or maintain lock to a spectroscopic transition. Fabrication of the HOT (TM) DBR lasers requires an optimized multi-quantum well structure and DBR grating designed to achieve the desired spectroscopic wavelength at temperatures up to 75-85 degrees C. This report describes progress to date including performance and lifetime data for HOT (TM) T DBR lasers for applications at several alkali atom and related wavelengths for portable quantum sensing and spectroscopic applications requiring minimum laser package power consumption.

关键词： Distributed Bragg Reflector lasers high Operating Temperature lasers Single Frequency lasers Quantum Sensing Spectroscopic Sensing

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high-power single-frequency hybrid external cavity lasers with demonstrated narrow linewidth <100 kHz 22

High-power single-frequency hybrid external cavity lasers wi...

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conference on high-power diode laser technology Xxii

作者： Mahat, M. Petrov, D. Carlin, Ben Sarailou, E. Charache, G. W. Innovat Photon Solut 313 Enterprise Dr Plainsboro NJ 08520 USA

ISBN: (纸本)9781510669949;9781510669932

There is a need for high-power narrow-linewidth, small footprint, highly coherent diode lasers at various wave-lengths (400-1800 nm) that can be utilized in many areas of photonics including fiber laser seeding, remote sensing, biomedical imaging, atomic clocks, quantum computing, THz spectroscopy, Raman spectroscopy, optical trapping, etc. Volume Bragg Grating (VBG) stabilized Fabry-Perot (FP) semiconductor lasers offer a versatile and robust platform for these applications. A Scanning Fabry-Perot Interferometer (FPI) is implemented for in-situ VBG alignment for these hybrid external cavity lasers (HECLs) in high volume production. Utilizing this method, it is possible to isolate a single longitudinal mode (SLM) of a single spatial mode semiconductor laser with very narrow linewidth. The typical laser linewidth during the production process is measured to be 0.01 nm with an Optical Spectrum Analyzer (OSA) and a few MHz with the FPI, both of which were limited by the resolution of the instrument. However, the actual linewidth of these high-power lasers (up to 450 mW fiber-coupled and 600 mW free space) are measured in final testing using the heterodyne beat note method. These measurements show that these VBG-locked single spatial mode FP lasers have Lorentzian linewidth of less than 100 kHz. The result of narrower laser linewidth is achieved due to the effect on the external cavity feedback and the increased cavity length. The linewidths of these wavelength stabilized lasers between 633 nm and 1064 nm are presented here and the input of the isolator, laser driver electronics and temperature controller on linewidth are studied and discussed as a function of optical power, laser temperature, and wavelength.

关键词： diode laser Narrow Linewidth Fabry-Perot DFB laser Single Mode External Cavity Semiconductor laser Volume Bragg Grating Wavelength Stabilized laser

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