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检索条件"任意字段=Conference on High-Power Diode Laser Technology and Applications XII"

共 1429 条记录，以下是1-10 订阅

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high power Coherent diode Arrays 22

High Power Coherent Diode Arrays

引用

conference on high-power diode laser technology Xxii

作者： Rothenberg, Joshua E. Goodno, Gregory D. Northrop Grumman Space Syst 1 Space Pk Los Angeles CA 90278 USA

ISBN: (纸本)9781510669949;9781510669932

The efficiency and reliability of high power (multi-kW) fiber lasers has revolutionized material processing and other applications. However, diode lasers offer the promise of even higher efficiency, yet scaling to high power while maintaining good beam quality remains a significant challenge. We discuss the challenges, advances, and potential future of this technology.

关键词： diode Arrays Coherent Combination high power diodes

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Advance on high power and high brightness diode laser modules for pumping and direct use applications 22

Advance on high power and high brightness diode laser module...

引用

conference on high-power diode laser technology Xxii

作者： Ding, Liang Liu, Peng Chen, Huawei Huang, Liangjie Xinghan Laser Technol Co Ltd B4 Block39 Haoye Rd Shenzhen 518000 Peoples R China

ISBN: (纸本)9781510669949;9781510669932

Industrial material processing represents a significant application for lasers. In this paper, we present our work on high power diode laser (DL) modules for the high brightness fiber laser pumping and direct diode laser integration. Together with state-of-the-art 915 nm and 976 nm laser diode (LD) single emitters from Coherent, we have realized an optical power 1200 W DL output (26 A driving current) with a 135 mu m core-diameter fiber with a numerical aperture (NA) of 0.22 (power ratio of NA 0.19/0.22 >95%). A dual wavelength combining technique was employed, yielding an fiber output brightness of 74 MW/(cm(2)center dot str). The fiber was end-capped to decrease the energy density on the optical coating. By adopting the same fiber end-capping optical coupling and wavelength combining techniques, a higher power DL module coupling 1800 W optical power into a 220 mu m end-capped fiber was successfully fabricated. The module achieved a favorable balance between power and brightness, and its direct application potential was certified through spot welding of thin stainless steel plates.

关键词： diode laser high brightness high power wavelength combining fiber laser pump direct diode laser

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.Advances in Manufacturing technology for Low Cost QCW diode laser Stacks Suitable for high Energy Pumping applications 22

.Advances in Manufacturing Technology for Low Cost QCW Diode...

引用

conference on high-power diode laser technology Xxii

作者： Barnowski, Tobias Vethake, Thilo Atwater, Katie Gong, Tim Razavi, Reza Zanghi, Eric Zhang, Ping McDougall, Stewart TRUMPF Photon 2601 Route130 S Cranbury NJ 08512 USA

ISBN: (纸本)9781510669949;9781510669932

We report a novel approach for the assembly of monolithic diode laser stacks with up to 56 laser diode bars at 0.48mm pitch. These stacks are based on 940nm laser bars AuSn soldered on CuW-submounts. By joining the 56 bar-on-submounts (BoS) using an electrically conductive material the complete continuous stack is formed. A robot is used to load these BoS into fixtures for the bonding process. We show the attachment of this monolithic stack to an insulated micro-channel cooler using electrically insulating bonding material to complete the laser module. Use of the novel bonding materials at lower joining temperatures, compared to conventional soldering processes, results in a stack assembly with lower induced stress which allows monolithic stacks with higher number of elements. We demonstrate peak power above 500W per bar at 0.3% duty cycle and 500A peak current with an average junction temperature of 45 degrees C, with over 29kW total peak power. Analysis of the dynamic temperature behavior within the pulses is presented using fast spectral measurements and simulation along with initial reliability test results.

关键词： QCW diode laser Stack backplane cooling secondary sources low-cost mounting

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Advancements in high brightness tapered diode laser amplifiers 22

Advancements in high brightness tapered diode laser amplifie...

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conference on high-power diode laser technology Xxii

作者： Campbell, Jenna Labrecque, Michelle McClune, Kevin Kudryashov, Igor Ebert, Chris Boelen, Sander Burke, Elliot Liu, Thomas Garrett, Henry Larkins, Matthew Kinney, Sarah Chu, Allen Grant, Hannah Morrison, Gordon Johansson, Leif Mashanovitch, Milan Leisher, Paul Freedom Photon LLC 41 Aero Camino Santa Barbara CA 93117 USA Luminar Technol Inc 2603 Discovery Dr 100 Orlando FL 32826 USA

ISBN: (纸本)9781510669949;9781510669932

high brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 1500 - 1600 nm wavelength band could enable compact, direct diode solutions with performance metrics that previously could only be met by fiber-based lasers or solid-state laser systems. We report on high power, high beam quality diode lasers at 1550 nm based on a tapered chip architecture. We have demonstrated >5 W of continuous wave output power at room temperature, with a slow axis beam propagation factor M-2 of 1.1, corresponding to a slow axis linear brightness of 9.2 W mm(-1) mrad(-1) [1, 2]. We have also demonstrated a fully packaged watt-class single mode fiber-coupled semiconductor optical amplifier (SOA) based on this technology. This package delivers >30 dBm (1.2 W) ex-fiber saturation output power [3], ten times higher saturation power than the prior state-of-the-art [4]. This result is achieved with an input seed power of 30 mW (similar to 15 dBm), corresponding to an overall gain of similar to 16 dB. To demonstrate the functionality of the SOA, we have carried out linewidth measurements and data transmission measurements. These tapered lasers and amplifiers offer great potential benefit for many pumping and direct use applications.

关键词： high power diode lasers high brightness sources tapered diode lasers semiconductor optical amplifiers

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high brightness long lifetime 650 nm single-mode laser diodes for display, printing, and quantum applications 22

High brightness long lifetime 650 nm single-mode laser diode...

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conference on high-power diode laser technology Xxii

作者： Ulkuniemi, R. Schramm, A. Vilokkinen, V. Nikkinen, J. Uusimaa, P. Modulight Corp Hermiankatu 22 Tampere Finland

ISBN: (纸本)9781510669949;9781510669932

Individually addressable laser diode arrays (IAB) have been first demonstrated in near-infrared wavelengths, 8xx nm and 9xx nm, being mostly utilized in the digital printing industry. When moving towards visible wavelengths, other applications emerge. Examples of these are various display applications, including AR/VR products and head-up-displays. In addition, novel applications for narrow linewidth lasers have emerged in the field of quantum computing. In this paper, we present our latest single-mode visible array results in 650 nm region, showing up to three times improvement in brightness. In addition, we demonstrate faster stabilization of the device during life-test and reach stabler operating power of the devices. Life-tests have been run with automatic current control (ACC) mode with two different operating currents, showing only minor change in output power. high stability and reliable operation combined with our IAB design are enablers for further miniaturization of device design, scalable to 100 emitters and beyond, reaching e.g. higher resolution for printing and display applications. Additionally, such design and scalability can be integrated with on-chip gratings reaching DBR and DFB operation, which enables new capabilities in quantum applications.

关键词： individually addressable laser diode bars IAB single-mode laser diodes red spectrum AR/VR applications

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Next-generation 80x nm high-power diode lasers: recent progress for single- and multi-bar packages 23

Next-generation 80x nm high-power diode lasers: recent progr...

引用

2025 conference on high power diode laser technology-Annual

作者： Kaaden, Tobias Meusel, Jens Zorn, Martin Pietrzak, Agnieszka Werner, Ekkehard Schroeder, Matthias Huelsewede, Ralf Stier, Martin Salge, Martin Doerfel, Falk Heidecke, Thomas Palinginis, Phedon JENOPTIK Optic Syst GmbH Goeschwitzer Str 25 D-07743 Jena Germany JENOPTIK Optic Syst GmbH Max Plank Str 25 D-12489 Berlin Germany TRUMPF Photon Inc Cranbury NJ 08512 USA

ISBN: (纸本)9781510684386;9781510684393

We report on recent developments to increase optical output power and reliability of 80x nm high-power diode lasers, significantly exceeding the performance of JENOPTIK's current 80x nm diode laser generation. The increase in optical output power is mainly achieved via utilization of in-house laser bars with improved chip design. Employing JENOPTIK's double-side cooled open heat sink designs and its related packaging technology allows for reliable operation of single-bar packages up to 120 W optical output power in continuous-wave (cw) operation. For hard-soldered multi-bar packages a novel solder deposition technology has been tested in combination with improved 80x nm broad-area laser bar designs demonstrating pulse peak power levels beyond similar to 400 W per bar in long-pulse (lp) mode operation, i.e. pulse durations up to 10 ms and duty cycles on the order of 10%. These promising results spur future developments in the field of optical pumping as well as direct diode laser applications.

关键词： high-power-diode lasers single- and multi-bar packages open heat sink diode lasers diode laser stacks optical pumping direct diode laser applications

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Novel high-power laser modules for drying applications based on VCSEL arrays 22

Novel high-power laser modules for drying applications based...

引用

conference on high-power diode laser technology Xxii

作者： Koerner, Roman Apetz, Rolf Conrads, Ralf Deppe, Carsten Gronenborn, Stephan Kolb, Johanna Sophie Moench, Holger Weidenfeld, Susanne Herper, Markus Groben, Dennis TRUMPF Photon Components GmbH Lise Meitner Str 13 D-89081 Ulm Germany

ISBN: (纸本)9781510669949;9781510669932

We developed a new generation of high-power laser modules for laser drying in battery electrode fabrication. Low power densities and homogeneous heating with full system efficiencies > 50% is within the record system efficiencies offered today. Moreover, simple scalability of the illumination profile and highly standardized fabrication techniques are the game changer benefits from using VCSELs as light source.

关键词： VCSEL VCSEL array high power laser multi-junction drying lithium-ion battery

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high power diode lasers for Quantum Technologies 22

High Power Diode Lasers for Quantum Technologies

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conference on high-power diode laser technology Xxii

作者： Bachmann, Alexander Sivers, Moritz V. Noelleke, Christian Scholz, Matthias Krug, Dennis Globisch, Bjoern Haering, Reto Kaenders, Wilhelm TOPTICA Photon AG Lochhamer Schlag 19 D-82166 Grafelfing Germany Eagleyard Photon GmbH Rudower Chaussee 29 D-12489 Berlin Germany

ISBN: (纸本)9781510669949;9781510669932

After the discovery of quantum mechanics in the early 20th century, lots of progress was made in using quantum effects. Many applications became part of everyday's life. Today, we are at the beginning of the second quantum revolution, that will not only use quantum effects indirectly, but aims at controlling quantum states and using this for a variety of new applications such as quantum computing, information processing, sensing and metrology. The laser, a tool from the first quantum revolution, will play a major role. Many quantum systems based on optical transitions, such as single atoms, ions or artificial atoms require lasers for the initialization and manipulation. Many of them demand "high-quality photons", that is a laser with stable frequency, low linewidth, high beam quality and single-mode frequency tunability. External cavity diode lasers (ECDL) meet these requirements. In addition, each quantum system requires a specific combination of wavelengths and power levels. TOPTICA Photonics offers the broadest wavelength coverage from 190 nm to 4 mu m based on direct diode lasers and filling the optical gap with frequency converted diode lasers. For a variety of applications, the output power of an ECDL in the range of a few mW up to approximately 150 mW is not sufficient. Using tapered amplifier chips in a master oscillator power amplifier (MOPA) configuration, commercially available output powers up to 4 W can be achieved while maintaining the properties of the master oscillator, i.e. single-frequency and single-spatial mode operation. R&D results of even higher output power of "high-quality photons" are presented.

关键词： quantum computing quantum information processing quantum sensing high-power diode lasers quantum technologies tapered amplifier MOPA ECDL

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2800W high brightness diode laser module targeting next generation fiber laser pump 23

2800W high brightness diode laser module targeting next gene...

引用

2025 conference on high power diode laser technology-Annual

作者： Ding, Liang Liu, Peng Lin, Wenfeng Dong, Xiaoxue Xinghan Laser Technol Co Ltd B4 Block39 Haoye Rd Shenzhen 518000 Peoples R China

ISBN: (纸本)9781510684386;9781510684393

This study presents a high-power diode laser (DL) pump module with 2800 W optical power output through a 300 mu m core-diameter optical fiber. This module uses the latest generation of high-power 9XX laser diodes, and the optical design was optimized to improve the coupling efficiency. The brightness and power are scaled thorough wavelength combining two beams of 915 nm and 976 nm. It outputs 2800 W @ 50 A optical power in continuous mode, with power ratio of numerical aperture 0.19/0.22 >95%. The output characteristics of this module under pulsed modulation mode have also been tested, outputting over 3500 W@ 60 A in pulsed mode. This module can enable a fiber-combiner free 2000 W fiber laser pump solution. Considering that the fiber output brightness reaches 26 MW/cm(2)*sr, it can also be applied to direct diode laser applications such as welding, laser edge sealing, and heat treatment.

关键词： diode laser high brightness high power wavelength combining fiber laser pump direct diode laser

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Multi-10kW diode laser systems with wall-plug efficiency greater than 50% 23

Multi-10kW diode laser systems with wall-plug efficiency gre...

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2025 conference on high power diode laser technology-Annual

作者： Witte, Ulrich Ackermann, Matthias Lange, Robert Dommermuth, Bastian Roessler, Florian Weber, Felix Schuetze, Max Behnke, Frank Rehmann, Georg Malchus, Joerg Yurekli, Burak Botter, Oleg Guetgemann, Jasmin Marenbach, Luca-Joel Krause, Volker Laserline GmbH Fraunhofer Str D-56218 Mulheim Germany

ISBN: (纸本)9781510684386;9781510684393

We report on different approaches to increase the wall-plug efficiency of our high-power diode laser systems in the near infrared. At output-powers in the range from 10 kW to 30 kW we demonstrate a wall- plug efficiency from 49% to 51% at the operating point for fiber coupled industrial grade laser systems. Furthermore, we demonstrate a novel approach of a free space direct diode laser for drying applications with an output power of 12 kW and a wall plug efficiency of 56%. The laser power is scalable to several tens of kW optical output power for intensities up to 200 W/cm(2).

关键词： high-power diode laser optical feedback fiber coupling high-efficiency direct diode laser

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