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检索条件"任意字段=Conference on High-Power Diode Laser Technology and Applications XII"

共 1429 条记录，以下是101-110 订阅

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Individually addressable visible laser arrays for display and printing applications 19

Individually addressable visible laser arrays for display an...

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conference on high-power diode laser technology XIX

作者： Ulkuniemi, Riina Vilokkinen, Ville Suominen, Ilpo Talmila, Soile Sillanpaa, Jari Uusimaa, Petteri Modulight Inc Hermiankatu 22 Tampere Finland

ISBN: (数字)9781510641723

ISBN: (纸本)9781510641723

Individually addressable laser diode arrays (IABs) are commercially demonstrated in the printing industry. These laser arrays are typically working at 8xx nm and 9xx nm wavelengths. Individually addressable laser diode arrays operating in visible region has been less reported and especially with limited commercial success. Yet, there is increasing interest in different variants of visible laser arrays not only in printing industry, but also in various display applications including head-up-displays and AR/VR products for different fields like automotive, consumer and medical markets. In this work we report the state-of-the-art high brightness individually addressable diode laser arrays operating at visible red wavelengths. The single-mode red IAB design is scalable from a few individually addressable emitters to tens of emitters per array with a highly uniform operation and repeatability and can be applied over the whole visible red spectrum from 630nm to 690nm. The individually addressable arrays at 640-660nm with a dense <100 mu m device pitch produce a record 3W total output power per array, with 0.85 W/A slope efficiency. The red IABs show excellent uniformity and stable long-term operation and are perfectly suited e.g. for various display applications or wherever there is a need for commercially viable high brightness individually addressable visible laser arrays.

关键词： Pump laser diode laser high brightness

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A dual-wavelength laser at 1064 nm and 1080 nm with tunable power ratio by varying the pump wavelength 12

A dual-wavelength laser at 1064 nm and 1080 nm with tunable ...

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Advanced lasers, high-power lasers, and applications xii 2021

作者： Zhang, Xianzhong Zhong, Kai Qiao, Hongzhan Zheng, Yizhe Li, Fangjie Xu, Degang Yao, Jianquan School of Precision Instruments and Opto-electronics Engineering Tianjin University Tianjin300072 China Key Laboratory of Optoelectronics Information Technology Ministry of Education Tianjin University Tianjin300072 China

ISBN: (数字)9781510646308

ISBN: (纸本)9781510646292

A continuous-wave (CW) dual-wavelength laser with coaxial diode end-pumping configuration is demonstrated. A theoretical model was built to simulate the CW output power process of the dual-wavelength laser generation. The experiment was performed with Nd:YVO4/Nd:YAP composite laser crystals. The continuous-wave output power reached 5.28 W under the maximum LD pump power of 15 W, corresponding to optical-optical conversion efficiency of 35.2%. The power ratio between 1064 nm and 1080 nm could be tuned by varying the pump wavelength to balance the gains in two laser crystals. © 2021 SPIE.

关键词： Pumping (laser)

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high power, high beam quality miniaturized diode laser module for direct material processing around 980 nm 19

High power, high beam quality miniaturized diode laser modul...

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conference on high-power diode laser technology XIX

作者： Hildenstein, P. Sahm, A. Feise, D. Jedrzejczyk, D. Paschke, K. Trankle, G. Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst D-12489 Berlin Germany Pantec Engn AG FL-9491 Ruggell Liechtenstein

ISBN: (数字)9781510641723

ISBN: (纸本)9781510641723

In material processing applications laser diodes are commonly used for pumping of solid-state lasers, providing high efficiencies at demanding optical output powers. Limited by relatively low beam qualities in the high power scheme, their usage in direct material processing applications is still marginal. To achieve power levels in the 30 W class, so far the combined radiation of multiple broad area emitters has been necessary. However their output beam quality is far from diffraction limitation and correlated to the aperture width of the emitting laser diode. This work presents a novel miniaturized diode laser module, with an optical output power of more than 30 W in continuous wave operation (cw). Simultaneously the output beam is close to the diffraction limit with a beam propagation factor of M-2 < 3. The laser module layout is based on tapered diode lasers featuring wavelength stabilization by a monolithic distributed Bragg-grating. The tapered diode laser sources achieve an output power in the order of 8 W (cw) at a wavelength around 980 nm. To enhance the output power while maintaining the beam quality of the single emitters, six laser beams were combined by the use of polarization and wavelength coupling. The use of custom designed beam couplers is necessary to combine the given radiation intensities. Therefore a thin film polarizer was adapted to the output wavelength and intensity. Wavelength multiplexing is realized by the use of steep edge filters. By changing the angle of incidence the edge position can be tuned which enables multiple combination steps. All optical components were housed inside of a module with a footprint of 58 x 34 mm(2) only. The resulting high power and beam quality delivered by the module enables direct material processing.

关键词： Micro-module high beam quality pump source high reliability tapered diode lasers

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high-efficiency and reliable pump lasers for fiber lasers 19

High-efficiency and reliable pump lasers for fiber lasers

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conference on high-power diode laser technology XIX

作者： Nikkinen, Jari Talmila, Soile Vilokkinen, Ville Melanen, Petri Saarela, Antti Orsila, Lasse Sillanpaa, Jari Uusimaa, Petteri Orsila, Seppo Modulight Inc Hermiankatu 22 Tampere 33720 Finland

ISBN: (数字)9781510641723

ISBN: (纸本)9781510641723

The demand for fiber lasers has increased due to widening of application areas and higher power levels. As fiber lasers have become the main workhorse for high power material processing applications and competition among fiber laser manufacturers have become more evident, the laser manufacturers are in the process to find ways to lower overall cost of ownership to become more competitive. Key areas to look at are the efficiency of the fiber laser, especially the efficiency of the diode pump modules, and the higher reliability of its' components. There is increasing demand for high power, high brightness, and higher efficiency laser diodes for kW-level fiber laser pumping. We present high-efficiency and high brightness laser diode optimized for lowered operating voltage while maintaining high power conversion efficiency of 60%. The laser diode design is a single quantum-well InGaAs/AlGaAs structure with graded index profile and large optical cavity design. The laser is fabricated into 4 mm long chips with a 94 mu m emitter stripe indented for standard 105/125 mu m core fiber laser pumping. The chips are mounted on AlN carrier and characterized as chip-on-submount. The laser produces 12.6 W optical power at 13 A and 1.62 V, reaching 60% conversion efficiency at operating point. The beam divergence angles are 8.5 degrees horizontal and 34 degrees vertical enabling high brightness and efficient fiber coupling. Furthermore, the lasers are reliability tested where they show outstanding reliability without sudden failures and ware-out rate less than 1% per 1000 hour over several thousand hours of testing.

关键词： Pump laser diode laser high brightness

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Fluoride crystal-based direct AlGaAs diode-pumped 2.1μm laser 12

Fluoride crystal-based direct AlGaAs diode-pumped 2.1μm las...

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Advanced lasers, high-power lasers, and applications xii 2021

作者： Huang, H.Z. Wu, H.C. Weng, W. Liu, H.G. Ge, Y. Li, J.H. Lin, W.X. Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Science Fuzhou350002 China Fujian Science and Technology Innovation Laboratory for Optoelectcronic Information of China Fuzhou350108 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (数字)9781510646308

ISBN: (纸本)9781510646292

We present a compact diode-pumped Tm/Ho:YLF laser, via integrating the Tm-doped and Ho-doped YLF crystals into a single bulk gain medium. Gain spectral model was developed first to the predict the potential Tm:YLF laser wavelength using different types of output coupling, for enhancing resonant absorption of the Ho:YLF crystal. Further verification were carried out by intra-cavity pumping the Ho:YLF laser with a Tm:YLF laser, where maximum output power of 11.3 W at 2.06 μm with near diffraction limited beam quality was obtained with conversion efficiency of 28.2% by considering the incident 793 nm diode power. In the Tm/Ho:YLF laser, maximum output power of 10.2 W at 2063 nm with power instability of 0.55% was obtained, corresponding to a slope efficiency of 29.6 % and optical conversion efficiency of 25.5%. The results provide a compact, accessible, and efficient Ho laser scheme, with has potential applications in wind lidar, surgeries, material processing, and nonlinear frequency conversion toward the mid-infrared region. © 2021 COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Solid state lasers

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laser diode Drivers for Rep-Rated DELPHI laser System

Laser Diode Drivers for Rep-Rated DELPHI Laser System

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International conference on Pulsed power

作者： Katherine Velas Cristopher Barillas Alex Chemali E.Stephen Fulkerson Anthony Gonzales Edward Koh Willie Lew Steve Telford Lawrence Livermore National Laboratory Livermore CA

The Matter in Extreme Conditions Upgrade (MECU) project is a major upgrade to the MEC instrument on the Linac Coherent Light Source (LCLS) X-ray free electron laser (XFEL) user facility at SLAC National Accelerator Laboratory. The MEC instrument combines the XFEL with a high-power, short-pulse laser and high energy shock driver to produce and study high energy density plasmas and materials found in extreme environments such as the interior of stars and fusion reactors, providing the fundamental understanding needed for applications ranging from astronomy to fusion energy. Lawrence Livermore National Laboratory (LLNL) is developing a Dual-mode Energetic laser for Plasma and high Intensity Science (DELPHI) to be installed in the upgraded MEC facility. DELPHI uses high-power diode arrays to pump >5 MW of total optical peak power into a helium gas-cooled Nd:glass main amplifier to produce 150 J pulses compressible to 150 fs at 10 Hz. Each diode array is composed of diode stacks that are driven by a single pulsed driver that contains the energy storage, drive circuitry, and arbitrary waveform control necessary to tailor the optical output of an individual diode stack. The diode drivers for DELPHI are an upgrade of the technology developed for the high rep-rate Advanced Petawatt laser System (HAPLS) that LLNL deployed to the Extreme Light Infrastructure Beamlines (ELI-Beamlines) in the Czech Republic in 2018. The individual DELPHI pulsers are designed to operate up to 600 A at 125 V with a pulse width up to 400 $\mu s$ at 10 Hz and have extended capabilities for even higher-power applications. Conceptual design and capabilities of the pulsed power drivers will be presented.

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Q-switched and mode-locked YVO₄/Nd:YVO₄/YVO₄ self-Raman first-Stokes laser 12

Q-switched and mode-locked YVO<sub>4</sub>/Nd:YVO<sub>4</sub...

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conference on Advanced lasers, high-power lasers, and applications xii

作者： Lian, Siping Guo, Jiahao Chen, Yongzhang Deng, Jinchao Yu, Yongqin Liang, Dezhi Zhang, Yufeng Xiao, Haibing Du, Chenlin Hu, Junhui Guangxi Normal Univ Coll Phys Sci & Technol Guilin 541004 Peoples R China Shenzhen Technol Univ Sino German Coll Intelligent Mfg Shenzhen 518060 Peoples R China Shenzhen Technol Univ Key Lab Adv Opt Precis Mfg Technol Guangdong Higher Educ Inst Shenzhen 518060 Peoples R China Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen 518060 Peoples R China Shenzhen Inst Informat Technol Intelligent Mfg & Equipment Sch Shenzhen 518172 Peoples R China

ISBN: (纸本)9781510646308;9781510646292

Using a YVO4/Nd:YVO4/YVO4 composite crystal end pumped by laser diode, we demonstrate the simultaneously Q-switched and mode-locked self-Raman laser at the first-stokes wavelength of 1176.07 nm. Its corresponding linewidth was measured to approximately be 0.14 nm. At the pump power of 38 W and the pulse repetition frequency of 50 kHz, the maximum average output power at 1176 nm was obtained to be 1.34 W with the corresponding optical conversion efficiency of 3.6%. The highest pulse energy and the highest peak power were obtained to be 35 mu J and 10.5 kW, respectively. The shortest mode-locked pulse width of the laser was obtained to be similar to 300 ps with the corresponding repetition rate of mode-locked laser pulse is similar to 1.11 GHz.

关键词： Self-Raman laser Q-switched mode-locked

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Structural Optimization of Reducing the Thermal Stress and Smile in Packaging a high power diode laser Array on a Micro Channel Cooler Using Gold-Tin Hard Solder 11

Structural Optimization of Reducing the Thermal Stress and S...

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conference on Semiconductor lasers and applications XI

作者： Wang, Jingwei Fu, Tuanwei Hou, Dong Gao, Lijun Zah, Chung-en Liu, Xingsheng Focuslight Technol Inc 56 Zhangba 6th Rd Xian 710077 Shaanxi Peoples R China Univ Chinese Acad Sci Beijing 100049 Peoples R China

ISBN: (数字)9781510646322

ISBN: (纸本)9781510646322;9781510646315

With the development of laser technology, high power diode lasers have found the increasing various applications in many fields, including industry, advanced manufacturing, aerospace, Lidar and medical systems etc.. The near field non-linearity (Smile) and lasing uniformity of emitters for high power diode laser arrays are critical to high reliable optically coupled modules and laser heads in a cladding system. In order to obtain the lower smile and higher lasing uniformity, two CTE-matched substrates (Copper Tungsten-CuW) are employed to bond a single GaAs-based diode laser array with the cavity length of 2mm on a Micro Channel Cooler (MCC) using Gold-Tin hard solder. This double-CuW MCC-packaged structure is called DMCC which enables a diode laser array bonded on a CuW/MCC/ CuW structure with all AuSn solder. Structural optimization has been carried out to reduce the thermal stress and smile for this package. Simulation results indicate that the smile and thermal stress is lowered 0.24 mu m and 16MPa, respectively. According to the simulation results, single bar DMCC-packaged diode lasers with lower Smile value are fabricated and characterized. The experimental results show that the ratio of Smile (average smile similar to 0.87 mu m) < 1 mu m is similar to 71% and higher similar to 19% than that of conventional structure (average smile similar to 1.2 mu m). Importantly, the quantity ratio of lasing emitters (>= 46 emitters) in a diode laser array is significantly raised from similar to 62% to 85% after the optimization of CuW submount.

关键词： high power thermal stress near field nonlinearity (Smile) structural optimization DMCC package all AuSn hard solder

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Temperature Dependence of Emission Cross Section and Fluorescence Lifetime of Cr:Colquiriites in 78-618 K Range

Temperature Dependence of Emission Cross Section and Fluores...

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2022 applications of lasers for Sensing and Free Space Communications, LS and C 2022

作者： Okuyucu, Serdar Demirbas, Umit Tanaka, Hiroki Thesinga, Jelto Ozturk, Yusuf Kärtner, Franz X. Pergament, Mikhail Center for Free-Electron Laser Science CFEL Deutsches Elektronen-Synchrotron DESY Notkestraße. 85 Hamburg22607 Germany Laser Technology Laboratory Department of Electrical and Electronics Engineering Antalya Bilim University Antalya07190 Turkey Max-Born-Straße 2 Berlin12489 Germany Physics Department University of Hamburg Luruper Chaussee 149 Hamburg22761 Germany The Hamburg Centre for Ultrafast Imaging Luruper Chaussee 149 Hamburg22761 Germany

We have measured the temperature dependence of fluorescence lifetime and emission cross section in Cr:LiCAF, Cr:LiSGaF and Cr:LiSAF in the 78-618 K range. Our results confirm their potential as high-power ultrafast so... 详细信息

ISBN: (纸本)9781957171203

关键词： diode pumped lasers Fluorescence laser operation Oscillator strengths Solid state lasers Tunable lasers

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LLC laser Driver for laser Wireless power Transfer Application

LLC Laser Driver for Laser Wireless Power Transfer Applicati...

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Global power, Energy and Communication conference (GPECOM)

作者： Hayri Yigit A. Rifat Boynuegri Burak Tekgun Electrical Engineering Yildiz Technical University Istanbul Türkiye Electrical Engineering & Clean Energy Technologies Institute Yildiz Technical University Istanbul Türkiye Electrical - Electronics Engineering Abdullah Gul University Kayseri Türkiye

ISBN: (数字)9798350351088

ISBN: (纸本)9798350351095

laser Wireless power Transfer (LWPT) represents a cutting-edge technology for the long-range transmission of energy, distinguished by its capability for high-power transfer and adaptability to mobile applications. The effectiveness of this system is significantly tied to its transmitter component, comprising the laser diode (LD) and its associated driving circuitry. This research address to enhance system efficiency by introducing a specially designed LLC converter circuit, aimed at improving the overall efficiency of both the driver circuit and the LD driving process while minimizing current ripple. The proposed circuit underwent comprehensive simulation using MATLAB/SIMULINK, resulting in noteworthy outcomes that showcased an impressive efficiency of 98.44% within the LD driver circuit.

关键词： Semiconductor lasers Transmitters power lasers Snubbers Wireless power transfer Mathematical models Topology

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