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检索条件"任意字段=Conference on High-Power Diode Laser Technology and Applications XII"

共 1431 条记录，以下是1351-1360 订阅

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Simultaneous dual-wavelength pulses from an injection-seeded Ti:sapphire laser

Simultaneous dual-wavelength pulses from an injection-seeded...

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conference on lasers and Electro-Optics (CLEO)

作者： T. Walther E.S. Fry Yan Liao J. Pan R. Nicolaescu Department of Physics Texas A and M University College Station USA

Summary form only given. Ti:sapphire lasers combine high output energies with wide tunability, making them interesting for applications requiring high-power and possibly Fourier transform-limited pulses. Injection seeding has proven to be an efficient way of producing these pulses in other systems; but cavity length requirements make this difficult to achieve in flashlamp-pumped Ti:sapphire lasers. The regenerative amplifier scheme remedies this problem, because it eliminates the need for resonance between master laser and slave cavity. Furthermore multiwavelength, injection-seeded operation becomes feasible. We present a laser system simultaneously operating at 761.1 nm and 789.2 nm that in addition has good locking capabilities to atomic lines and high spectral intensities for high nonlinear conversion efficiencies.

关键词： Optical pulses laser tuning Filters Optimized production technology Photodiodes Crystals Chemicals Frequency diode lasers Birefringence

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Large format smart pixel arrays and their applications

Large format smart pixel arrays and their applications

引用

IEEE conference on Aerospace

作者： J.A. Trezza J.S. Powell C. Garvin K. Kang R. Stack Sanders Lockheed Martin Company Nashua NH USA

Smart pixel arrays represent a revolution in optoelectronic technology. Sanders has been using high performance GaAs quantum well optics, silicon CMOS, and flip chip bonding technology to create large reflective mode 2D spatial light modulator and resonant cavity light emitting diode arrays up to 256/spl times/256=65536 pixels and 1D arrays as large as 1/spl times/2048 with 6 bits of gray scale (an integrated D/A converter is available on each pixel). The pixels are capable of switching 10's of picoseconds independently, though our current CMOS switches our arrays in 160 ns. We have demonstrated both phase and amplitude modulation as well as operation at both visible and IR wavelengths. We have been using these smart pixel arrays to demonstrate high speed, low power optical image processing for synthetic aperture radar (SAR), automatic target recognition (ATR), optical beam steering, optical data interconnect and optical memory access. While our hybrid technology's performance already allows system speeds 3 to 5 orders of magnitude greater than competing all-electronic and all-optical system approaches, there is still enormous opportunity for further performance increases.

关键词： Smart pixels Optical arrays Optical modulation Adaptive optics high speed optical techniques Optical interconnections laser radar CMOS technology Optical beams Gallium arsenide

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New UV lasers for material processing in industrial applications

New UV lasers for material processing in industrial applicat...

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laser Materials Processing conference

作者： Endert, H Scaggs, M Basting, D Stamm, U Lambda Phys Inc Ft Lauderdale FL 33309 USA

ISBN: (纸本)0912035560

UV lasers are in many ways ideal industrial processing tools. Their short wavelength provides the dual benefits of small focused or imaged-down spot sizes together with non-thermal ("cold") processing. The result is an inherent capability for producing finer features in microstructuring applications than can be achieved with longer wavelength sources. The most important type of high power UV laser for industrial applications is the excimer laser. Available wavelengths include 351, 308, 248, 193 and 157 nm. The largest commercially available excimer lasers generate up to 200 W stabilized average power and up to 700 mi pulse energy at 308 nm. Besides traditional, flashlamp pumped Nd:YAG lasers with third harmonic generation (THG), a important new UV laser, just beginning to impact the industrial processing market, is the diode-pumped, frequency multiplied Nd:YAG laser. These utilize non-linear crystals to transform the 1.06 mu m output to its third (355 nn), fourth (266 nm) or fifth (213 nm) harmonic. The advantage of the diode-pumped Nd:YAG laser is that they are physically compact, highly reliable and mechanically rugged. Coupled with advantages of short wavelength output, recent improvements in laser reliability, cost-of-ownership and performance are enabling UV lasers to be employed in an expanding range of applications. This paper will briefly review those applications and their main laser requirements, and then present the most current advances in UV laser technology which address those needs.

关键词： Neodymium lasers

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Investigations on beam profiles and beam propagation of astigmatic laser diodes with an optical near field microscope

Investigations on beam profiles and beam propagation of asti...

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conference on lasers in Material Processing

作者： Gao, C Friberg, AT Motzkus, R Reng, N Beijing Institute of Technology Beijing China

ISBN: (纸本)0819425176

For industrial applications of high power laser diodes it is of interest to know the focal region of the laser beam for efficient fiber coupling and material processing. Similar questions also occur with laser diodes far the optical communication, industry. For efficient fiber coupling the beam shalt be round and its waist situated at the fiber entrance. With an optical near field microscope we investigated the near field at the facettes of the laser diode and documented the change when leaving the laser diode in micrometer steps. It is a non paraxial laser beam, The beam radii can be evaluated from the in tensity profiles and so the caustic curve of the laser beam in x- and y-direction, which in the ideal case yields a hyperbolic propagation law.

关键词： SNOM near field laser diode non paraxial beam propagation law

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Monitoring of the aging of high-power laser diode arrays

Monitoring of the aging of high-power laser diode arrays

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International conference on Optical Diagnosis of Materials and Devices for Opto-, Micro and Quantum Electronics 1997

作者： Tomm, J.W. Bärwolff, A. Lienau, Ch. Richter, A. Jaeger, A. Donecker, J. Gerhardt, A. Daiminger, F.X. Heinemann, S. Rudower Chaussee 6 D-12489 Berlin Germany

Different diagnostic methods were investigated in order to evaluate their potential as aging sensitive tool for the analysis high-power laser diode arrays. The well-known method of photocurrent spectroscopy, i.e. the measurement of the spectral sensitivity of a laser diode acting as a detector, was found to monitor aging properties of high power laser diode arrays in convenient way. Photocurrent spectra of high power laser diode arrays emitting at 808 nm (1.53 eV) were investigated the 0.8-3.0 eV photon energy range. Aging induced changes in different spectral regions reveal the influence of different mechanisms affecting the structure. One aging effect - the growth of the defect concentration within the optically active layers of the devices - is monitored. Conclusions on the microscopic nature of the changes are drawn and several applications are discussed.

关键词： Semiconductor lasers

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Influence of the mounting configuration on the transient thermal behavior of high power laser diode arrays

Influence of the mounting configuration on the transient the...

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Proceedings of the 1997 47th IEEE Electronic Components & technology conference

作者： Puchert, R. Baerwolff, A. Voss, M. Menzel, U. Tomm, J.W. Luft, J. Max-Born-Inst fuer Nichtlineare Optik und Kurzzeitspektroskopie Berlin Germany

Operation parameters of high power laser diodes such as emission wavelength, threshold current, optical output power and lifetime depend sensitively on the temperature of the active region. For many applications, knowledge about the temporal evolution of the temperature of active region is necessary to optimize the operating conditions. This paper describes experimental and theoretical work on the influence of different mounting configurations on the temperature transients in the active regions of high power laser diodes. We investigate the transient thermal behavior in a range between 10 ns and cw operation. In this range the modeling is verified by excellent agreement of experimental data and theory.

关键词： Quantum well lasers

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Lateral light-coupling for evanescent-field guiding of cold atoms

Lateral light-coupling for evanescent-field guiding of cold ...

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Proceedings of the 1997 Pacific Rim conference on lasers and Electro-Optics, CLEO/Pacific Rim

作者： Sakaki, Keiji Ito, Haruhiko Ohtsu, Motoichi Tokyo Inst of Technology Yokohama Japan

An atom-guidance scheme with lateral coupling was used for evanescent-field guiding of cold Rb atoms. The guided Rb atoms were detected by a channel electron multiplier (CEM) via a Doppler-free two-step photoionization with a diode laser and a high power Ar-ion laser. The ionization signal of the Rb atom flux guided in a 4-cm-long hollow fiber is a function of the frequency detuning.

关键词： laser applications

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Numerical designs of 100-kW class solid-media lasers

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conference on Modeling and Simulation of higher-power laser Systems IV

作者： Basu, S Depsky, J Shah, R Endo, T Rocketdyne Div./Boeing North American Inc. (United States)

ISBN: (纸本)0819424005

In this paper, we have reviewed the design principles and numerical formalisms applicable to push the average power limits of state-of-the-art solid-media lasers from typically 1 kilowatt to hundreds of kilowatt. Several device architectures are considered, taking into account utilization of off-the-shelf technology, and inclusion of realistic values of propagation loss. We demonstrate that once the beam propagation problem is addressed properly, laser devices employing solid-media are capable of producing 100 kW to 1 MW of average output power in cw operation at 6 to 12% wall plug efficiency. This will open up applications for solid-media lasers where gaseous and chemical lasers are currently used.

关键词： solid-state laser amplifier beam propagation finite element power scaling temperature stress oscillator dynamic gain medium diode laser Neodymium Ytterbium YAG glass high power laser

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Fast, sensitive trace gas detection with a portable solid-state mid-infrared laser sensor

Fast, sensitive trace gas detection with a portable solid-st...

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Proceedings of the 1997 10th IEEE lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2)

作者： Petrov, K.P. Mine, Y. Curl, R.F. Tittel, F.K.

A portable, high-precision gas sensor based on diode-pumped mid-infrared difference frequency generator is developed. The instrument uses no cryogenic of high-voltage components and controlled by a laptop computer. It shows reliable unattended operation in the field for more than 16 days without loss of output power or precision. The instrument can be modified for the detection of several trace gases. An external-cavity diode laser can provide a tuning range of ≥700 cm-1, allowing the detection of N2O, CO2, SO2, H2CO and CH2. This technology has potential benefits for trace gas detection applications, since cost, power consumption, and size of the laser pump sources can be reduced further.

关键词： Semiconductor lasers

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Optically powered sensor technology

Optically powered sensor technology

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Proceedings of the 1997 ISA TECH/EXPO technology Update. Part 1/4 (of 5)

作者： Weiss, Stephan Werthen, Jan Andersson, Anders Photonic Power Systems Inc Mountain View United States

There is a growing need for intrinsically safe and noise free transmission of sensor data to a local control system in today's applications. Refineries, which are prone to damage due to lightning, or electric utilities, where signals are measured at high voltage have developed the needs for this new innovative fiber optic sensor technology. An optically powered sensor uses conventional electronics for the measurement of analog physical parameters such as voltage, temperature and pressure;however, power delivery and sensor data retrieval are all accomplished over optical fiber. Consequently, the measurement system can be placed in a high voltage environment or, since there is no risk for sparks, in any hazardous or explosive environment. The key component in such an active optical sensor system is a photovoltaic device that acts both as a power receiver and a data transceiver. The monolithic device, made from GaAs, provides the necessary power for all the electronics including an A/D converter, an LED and associated circuitry. The driving light power for the system is delivered by a laser diode or a light emitting diode housed in a passively cooled enclosure and placed near or inside a controlled environment at ground potential. Using 200 μm core, step index fiber, the optically powered sensor can operate over a distance of up to 1 km. Testing of several sensors were initiated in 1994 at different sites in Europe and the US. Results from these tests, which are conducted in parallel with standard sensors, are extremely positive over a wide temperature range.

关键词： Fiber optic sensors

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