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检索条件"任意字段=Conference on High-Power Diode Laser Technology and Applications XII"

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Multi kW high efficiency high filling factor 870nm and 940nm QCW semiconductor diode laser bars for inertial fusion energy applications 23

Multi kW high efficiency high filling factor 870nm and 940nm...

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2025 conference on high power diode laser technology-Annual

作者： Liu, Guoli Xu, Zuntu Li, Jingwei Zhang, Qiang Weiss, Eli Guo, Bo Lei, Xiaoyan Zhang, Yu Zeitschel, Alex Kissel, Heiko Carriere, James Neukum, Joerg Koehler, Bernd Venohr, Roland Coherent Corp 5100 Patrick Henry Dr Santa Clara CA 95054 USA Coherent Dilas Galileo Galilei Str 10 Mainz Germany Stanford Nanofabricat Facil 420 Via Ortega Way Stanford CA 94305 USA

ISBN: (纸本)9781510684386;9781510684393

We present recent progress of semiconductor quasi-continuous-wave diode laser bars at 870nm and 940nm for inertial fusion energy applications. With optimization of epitaxial structure, chip layout, wafer processing and facet passivation, diode laser bars with 75% filling factor and 4.0mm cavity length at both 870nm and 940nm were successful manufactured with single junction and dual junctions. From single junction bar, more than 1kW QCW optical power with close 60% E/O efficiency is demonstrated;for double junction bar, 1.8kW optical power with more than 60% E/O efficiency is demonstrated at 870nm, and 2.7kW optical power with 52% E/O efficiency is achieved at 940nm. We also show the pathway to achieve even higher E/O efficiency by further optimization. We also present the simulated results of using those high-power bar a in high density QCW stack with 36kW peak power and 19.8kW/cm(2) optical power density based on single junction bar and up to 80kW peak power stack and 44.2kW/cm(2) optical power density based on double junction bar.

关键词： multi kW high efficiency 870 nm 940nm QCW laser diode bar pumping inertial fusion

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Advancements in 1550 nm high Brightness Tapered diode laser Amplifiers 23

Advancements in 1550 nm High Brightness Tapered Diode Laser ...

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2025 conference on high power diode laser technology-Annual

作者： Campbell, Jenna Labrecque, Michelle Kudryashov, Igor McClune, Kevin Chu, Allen Ebert, Chris Burke, Elliot Liu, Tom Kotelnikov, Jack Johansson, Leif Mashanovitch, Milan Leisher, Paul Morrison, Gordon Freedom Photon LLC 41 Aero Camino Santa Barbara CA 93117 USA Luminar Technol Inc 2603 Discovery Dr 100 Orlando FL 32826 USA

ISBN: (纸本)9781510684386;9781510684393

Watt-class semiconductor optical amplifiers (SOAs) at 1550 nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including remote sensing, optical communications, and LIDAR, with the potential to be more efficient, compact, and cost-effective. Recent advancements have enabled high power diffraction-limited output from diode laser amplifiers with a tapered architecture. Freedom Photonics' packaged SOAs deliver >1.7 W of continuous wave fiber-coupled output power at 1550 nm. Data communications measurements have demonstrated an open eye diagram, achieved with >1 W of optical output power at 10.7 Gbps using the differential phase shift keying (DPSK) communications format. The tapered laser devices have sustained >13,000 hours of ongoing stress testing with negligible degradation, indicating good reliability for commercial qualification.

关键词： high power diode lasers high brightness sources tapered diode lasers semiconductor optical amplifiers

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800W-class high-power blue laser diode module with GaN-based laser diodes 23

800W-class high-power blue laser diode module with GaN-based...

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2025 conference on high power diode laser technology-Annual

作者： Tsuboi, Yuki Konishi, Ryotaro Morizumi, Naoto Nitta, Masahiro Okuno, Ryota Shibuya, Satoshi Okada, Ayato Kawakita, Yasumasa Nichia Corp 13-19 Moriya Cho3-ChomeKanagawa Ku Yokohama Kanagawa 2210022 Japan Nichia Corp 491 OkaKaminaka Cho Anan Tokushima 7748601 Japan Furukawa Elect Corp Ltd 6 Yawata kaigandori Ichihara Chiba 2908555 Japan

ISBN: (纸本)9781510684386;9781510684393

Mobility electrification has been increasing the use of copper in motors, batteries, and other key electric components. This has led to an increased demand for copper processing. Copper has a high optical absorption coefficient in the blue wavelength range. Therefore, a blue laser is a promising candidate as a light source for copper processing due to its high energy efficiency. We have been developing high-power blue laser diode ( LD) modules. This module is a fiber-coupled direct diode laser using the techniques of spatial combining and polarization beam combining. We previously reported on the development of an LD module which achieved an output power of over 500 W from an optical fiber with a 110 mu m core diameter. An increase in the number of installed LDs and the output power of each LD helped achieve this high optical output power. To realize high-quality and high-efficiency copper processing and expand the applications of blue laser processing, we have been continuously making progress in the development of high-power blue LD modules. In this paper, we have made further design improvements of both the LDs and the LD module to increase the output power of the LD module. As a result, we have achieved an output power of more than 800 W at a 110 mu m core size. This developed LD module has a brightness of more than 8.4 MW/cm(2) and a BPP of 8.8 mm-mrad.

关键词： blue laser diode (blue LD) blue laser diode module (blue LD module) direct diode laser (DDL) fiber coupling copper welding laser processing

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Next-Generation high-power laser diode Pump Modules 23

Next-Generation High-Power Laser Diode Pump Modules

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2025 conference on high power diode laser technology-Annual

作者： Ermolaev, M. Moshegov, N. Berezin, I. Trubenko, P. Shifrovich, I. Berishev, I. Mukhametzhanov, I. Chuyanov, V. Kompan, F. Miftakhutdinov, D. Petruk, A. Ovtchinnikov, A. IPG Photonics Corp 377 Simarano Dr Marlborough MA 01752 USA SUNY Stony Brook Dept Elect & Comp Engn Stony Brook NY 11794 USA

ISBN: (纸本)9781510684386;9781510684393

Fiber lasers have become indispensable in various industrial applications due to their efficiency and versatility. One of the key factors now considered in the industry is the cost per watt of output power. We report on a new generation of high-power, highly efficient laser diode pump modules capable of delivering over 1.5 kW of power at 975 nm. This development is fueled by enhancements in epitaxial design, chip design, and packaging technologies, which significantly enhance performance without sacrificing the reliability of laser diodes and pump modules. By improving efficiency and leveraging IPG's state-of-the-art high-volume scalable technology, these advanced laser diode chips and pumps reduce the overall cost per watt, ensuring consistent quality and availability.

关键词： Fiber lasers diodes Semiconductor lasers Photonics high power lasers Fiber coupled lasers Manufacturing Heatsinks laser development Reliability

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Design and fabrication of optical waveguides for high-power density laser diodes for LiDAR applications 22

Design and fabrication of optical waveguides for high-power ...

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conference on high-power diode laser technology Xxii

作者： Diallo, T. M. Rodriguez, C. Denis, J. Desfonds, E. Boucher, J-F. Rouifed, M-S. Laser Components Canada Inc 195 Joseph Carrier Vaudreuil Dorion PQ J7V 4J1 Canada

ISBN: (纸本)9781510669949;9781510669932

LiDAR (light detection and ranging) technology has gained significant importance in various fields, including autonomous vehicles, environmental monitoring, and remote sensing. 905nm pulsed laser diodes are an essential component of a LiDAR system, which performance relies heavily on the laser power level and the characteristics of its emitted light beam. While the fabrication of high-power pulsed laser diodes is already mature, reliably combining a high-power level and a concentration of the laser beam (>90%) within a limited emitting width is an ongoing challenge. Another major concern is the development of facet coatings capable of withstanding the high-power density generated by these lasers. Facet degradation due to the excessive optical power leads to a reduced laser efficiency and a risk of increased failure rates Here, we have devised novel optical waveguide designs for triple junction 905nm lasers with optimized mode profiles and an effective confinement structure. This enables lasers to have a power density that is four (4) times higher than the traditional ones and, to confine most of the beam energy within an emitting width of less than 60 mu m. Furthermore, our research explores innovative approaches to facet coatings that enhance facet durability and minimize power-induced degradation. This results in exceptionally reliable lasers, as demonstrated by a thousand hours of life test data. Through this work, we have achieved significant advancements in design and fabrication of high-power laser diodes for LiDAR applications. Experimental results demonstrate improved power efficiency, reliable facet coatings, and effective energy confinement within the desired emitting width.

关键词： Pulsed-laser diodes high-power lasers waveguide LiDAR 905 nm broad area lasers

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Direct diode laser solutions for drying applications 23

Direct diode laser solutions for drying applications

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2025 conference on high power diode laser technology-Annual

作者： Koehler, Bernd Kreuzer, Heiko Bayer, Andreas Kindervater, Tobias Koenning, Tobias Horn, Wolfgang Neukum, Jorg Klein, Markus COHERENT Mainz Galileo Galilei Str 10 D-55129 Mainz Hechtsheim Germany

ISBN: (纸本)9781510684386;9781510684393

Conventional drying and heating methods, such as thermal convection or infrared heating, have limitations in terms of energy efficiency, processing speed and uniformity of the drying process. Recently, the use of diode lasers for such applications has emerged as a promising alternative, offering several advantages, like significant reduction of energy consumption and equipment footprint. In the battery manufacturing industry, laser-assisted drying of battery electrodes is an active area of research. However, the implementation of direct diode lasers for drying battery electrodes in large-scale production is still under investigation. Challenges are tailoring the laser parameters, regarding working distance, intensity, uniformity, and scalability of the system. Furthermore, for some applications tailoring the beam to individually address segmented electrodes is another requirement. In this paper we present several concepts for laser-assisted drying considering the aforementioned challenges and exploring potential solutions. Among these are concepts based on fiber-coupled modules, but also direct diode solutions with free space beam shaping. The flexibility of the concepts allows customization of working distance from below 500 mm up to 1 m and illumination intensities up to 10 W/cm(2). One important aspect is a concept enabling heating of individually addressable illumination zones in two dimensions, which is especially important when considering segmented electrodes. In addition, we will provide solutions for integrating the optical concepts into turn-key multi-kW systems.

关键词： high-power diode laser battery electrode drying laser drying materials processing industrial laser scalable modular

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high Efficiency, high Reliability Semiconductor laser diode Chips and Modules for Fiber laser Pumping 23

High Efficiency, High Reliability Semiconductor Laser Diode ...

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2025 conference on high power diode laser technology-Annual

作者： Liu, Xiaohang Pietrzak, Agnieszka Lewicki, Rafal Mukherjee, Anisha Xiong, Yihan Jiang, Ching-Long Liu, Xi McDougall, Stewart TRUMPF Photonics Inc 2601 Route130 S Cranbury NJ 08512 USA

ISBN: (纸本)9781510684386;9781510684393

Fiber lasers are a dominant force in both industrial and consumer applications. In the industrial sector, fiber lasers excel in material processing tasks like cutting and welding. They can also operate at eye-safe wavelength of 1550 nm, making them suitable for Lidar light sources in autonomous vehicles. Semiconductor laser diodes are the optical pump source for fiber lasers, due to their compact size, exceptional efficiency, and high reliability. We report on the development of high-power, high-efficiency, and reliable semiconductor laser diodes. We show through optimization of chip vertical and lateral design an increase in efficiency of 97x nm chips from 62% to 67%, delivering >45 W linear power. Through accelerated life-test we demonstrate extremely high reliability levels for these chips enabled by low defect epitaxy, facet passivation and hard solder assembly on CTE matched submounts. We demonstrate the use of these chips in single emitter modules for VBG locked and unlocked operation. For example, we show a 28-emitter module delivering more than 550 W of power with efficiency of 58% into 220 mu m fiber. We also show 94x nm chips, designed as pumps for fiber lasers in LIDAR applications, exhibiting high-temperature stability with peak efficiency exceeding 55% at a junction temperature of 130 degrees C.

关键词： Broad area diode laser Single emitter Fiber laser pump high power high efficiency high reliability Lidar environmental temperatures heatsink temperature

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1.06 um DFB laser with 1W optical power output 23

1.06 um DFB laser with 1W optical power output

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2025 conference on high power diode laser technology-Annual

作者： Buyalo, M. S. Mikhrin, V. S. Zhabotinskii, A. V. Mikhrin, S. S. Bakshaev, I. O. Gubenko, A. E. Innolume GmbH Konrad Adenauer Allee 11 D-44263 Dortmund Germany

ISBN: (纸本)9781510684386;9781510684393

We demonstrate an InGaAs quantum-well-based DFB laser at 1.06 mu m, delivering up to 1 W of optical power with 45% power conversion efficiency in continuous wave regime. A corrugated surface grating with vertical coupling has been utilized to eliminate the overgrowth step from the fabrication process. As a result, single spectral mode lasing with a side-mode suppression ratio of more than 45 dB is observed from 4 mm-long lasers. high-power single spatial mode is achieved using 1.9 mu m broad waveguide structure with the quantum well positioned to favor the fundamental spatial mode. Additionally, a 1 mm-long integrated spot size converter has been applied to reduce power density on the front facet and ensure a stable beam with a plane wavefront, having a divergence of 4x28 degrees FWHM over a wide range of operating conditions. These results prove broad waveguide DFB laser design and fabrication process for high-power seed applications.

关键词： DFB laser 1.06 um single mode laser diode DFB laser with spot size converter Quantum Well laser diode high power laser diode seeding

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high Temperature DBR lasers for Next Generation Quantum Sensing and Spectroscopic applications 22

High Temperature DBR lasers for Next Generation Quantum Sens...

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conference on high-power diode laser technology Xxii

作者： Young, Preston Plano, William Zhang, Weida Varnau, Grant Xiang, Annie Photodigm Inc 1155 E Collins Blvd 200 Richardson TX 75081 USA

ISBN: (纸本)9781510669949;9781510669932

Numerous next-generation quantum and spectroscopic sensing applications are emerging from the lab into portable commercial products. Next-generation spectroscopic sensors are used in applications including drug and compound identification in industrial analysis and quality control, non-invasive medical applications such as blood flow and glucose monitoring, as well as environmental sensing and monitoring. Quantum sensing applications include precision Positioning, Navigation, and Timing (PNT) instruments for use in GPS denied environments, as well as precision magnetometers and gravimeters for both ground and space-borne mission capability. The key component for each of these portable applications is a robust single frequency laser source. To minimize the laser power requirements, Photodigm has developed high operating temperature (HOT (TM)) Distributed Bragg Reflector (DBR) lasers in the GaAs/AlGaAs materials system for operation at key near-infrared (NIR) wavelengths. The HOT (TM) DBR reduces overall packaged device power consumption by operating at elevated temperatures by operating on wavelength without the need for Peltier cooling. The HOT (TM) DBR device eliminates the need for thermoelectric cooling by relying on a combination of laser self-heating and resistive heating to maintain a stable operating wavelength needed to probe or maintain lock to a spectroscopic transition. Fabrication of the HOT (TM) DBR lasers requires an optimized multi-quantum well structure and DBR grating designed to achieve the desired spectroscopic wavelength at temperatures up to 75-85 degrees C. This report describes progress to date including performance and lifetime data for HOT (TM) T DBR lasers for applications at several alkali atom and related wavelengths for portable quantum sensing and spectroscopic applications requiring minimum laser package power consumption.

关键词： Distributed Bragg Reflector lasers high Operating Temperature lasers Single Frequency lasers Quantum Sensing Spectroscopic Sensing

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high-power single-frequency hybrid external cavity lasers with demonstrated narrow linewidth <100 kHz 22

High-power single-frequency hybrid external cavity lasers wi...

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conference on high-power diode laser technology Xxii

作者： Mahat, M. Petrov, D. Carlin, Ben Sarailou, E. Charache, G. W. Innovat Photon Solut 313 Enterprise Dr Plainsboro NJ 08520 USA

ISBN: (纸本)9781510669949;9781510669932

There is a need for high-power narrow-linewidth, small footprint, highly coherent diode lasers at various wave-lengths (400-1800 nm) that can be utilized in many areas of photonics including fiber laser seeding, remote sensing, biomedical imaging, atomic clocks, quantum computing, THz spectroscopy, Raman spectroscopy, optical trapping, etc. Volume Bragg Grating (VBG) stabilized Fabry-Perot (FP) semiconductor lasers offer a versatile and robust platform for these applications. A Scanning Fabry-Perot Interferometer (FPI) is implemented for in-situ VBG alignment for these hybrid external cavity lasers (HECLs) in high volume production. Utilizing this method, it is possible to isolate a single longitudinal mode (SLM) of a single spatial mode semiconductor laser with very narrow linewidth. The typical laser linewidth during the production process is measured to be 0.01 nm with an Optical Spectrum Analyzer (OSA) and a few MHz with the FPI, both of which were limited by the resolution of the instrument. However, the actual linewidth of these high-power lasers (up to 450 mW fiber-coupled and 600 mW free space) are measured in final testing using the heterodyne beat note method. These measurements show that these VBG-locked single spatial mode FP lasers have Lorentzian linewidth of less than 100 kHz. The result of narrower laser linewidth is achieved due to the effect on the external cavity feedback and the increased cavity length. The linewidths of these wavelength stabilized lasers between 633 nm and 1064 nm are presented here and the input of the isolator, laser driver electronics and temperature controller on linewidth are studied and discussed as a function of optical power, laser temperature, and wavelength.

关键词： diode laser Narrow Linewidth Fabry-Perot DFB laser Single Mode External Cavity Semiconductor laser Volume Bragg Grating Wavelength Stabilized laser

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