检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

1,397 篇 会议
32 篇 期刊文献

馆藏范围

1,429 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

1,150 篇 理学
- 1,126 篇 物理学
- 46 篇 化学
- 16 篇 数学
- 9 篇 地质学
- 3 篇 天文学
662 篇 工学
- 412 篇 电气工程
- 161 篇 光学工程
- 116 篇 材料科学与工程（可...
- 104 篇 电子科学与技术（可...
- 52 篇 仪器科学与技术
- 43 篇 化学工程与技术
- 41 篇 冶金工程
- 31 篇 计算机科学与技术...
- 29 篇 机械工程
- 27 篇 信息与通信工程
- 25 篇 测绘科学与技术
- 24 篇 动力工程及工程热...
- 13 篇 软件工程
- 12 篇 航空宇航科学与技...
- 10 篇 生物医学工程（可授...
- 9 篇 力学（可授工学、理...
- 9 篇 控制科学与工程
- 5 篇 建筑学
- 5 篇 土木工程
- 4 篇 环境科学与工程（可...
20 篇 管理学
- 19 篇 管理科学与工程(可...
- 5 篇 工商管理
17 篇 医学
- 12 篇 临床医学
- 5 篇 特种医学
4 篇 经济学
- 4 篇 应用经济学
4 篇 军事学

主题

151 篇 semiconductor la...
129 篇 diode lasers
105 篇 reliability
96 篇 high power
80 篇 diode laser
77 篇 fiber lasers
74 篇 laser diode
66 篇 fiber coupling
62 篇 high power diode...
58 篇 power lasers
57 篇 high brightness
55 篇 high power laser...
55 篇 laser applicatio...
51 篇 diodes
51 篇 pump lasers
48 篇 high-power
44 篇 high efficiency
43 篇 laser excitation
39 篇 semiconductor la...
36 篇 power generation

机构

29 篇 dilas diodenlase...
19 篇 leibniz inst hoc...
17 篇 nlight corp vanc...
16 篇 aerosp corp elec...
13 篇 coherent inc san...
12 篇 fraunhofer inst ...
10 篇 dilas diode lase...
10 篇 fraunhofer inst ...
10 篇 jenoptik laserdi...
10 篇 ferdinand braun ...
10 篇 osram opto semic...
9 篇 fraunhofer insti...
8 篇 topgan ltd ul so...
7 篇 dilas diode lase...
7 篇 ammono sa pl-003...
7 篇 jenoptik laser g...
7 篇 limo lissotschen...
7 篇 coherent inc 510...
7 篇 osram opto semic...
6 篇 northrop grumman...

作者

37 篇 biesenbach jens
37 篇 erbert g.
25 篇 koehler bernd
22 篇 kissel heiko
22 篇 crump p.
18 篇 traenkle g.
18 篇 patterson steve
17 篇 wenzel h.
17 篇 paschke k.
16 篇 sebastian j.
16 篇 sin yongkun
16 篇 huelsewede r.
13 篇 bao l.
13 篇 strauss uwe
13 篇 koenning tobias
12 篇 hennig p.
12 篇 bugge f.
12 篇 meusel j.
12 篇 leisher paul
11 篇 traub martin

语言

1,420 篇 英文
6 篇 中文
3 篇 其他

检索条件"任意字段=Conference on High-Power Diode Laser Technology and Applications XII"

共 1429 条记录，以下是21-30 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

power Scaling of Broad-Area laser diodes from 755 to 1064 nm 23

Power Scaling of Broad-Area Laser Diodes from 755 to 1064 nm

引用

2025 conference on high power diode laser technology-Annual

作者： Liu, Yuxian Tang, Song Zhao, Yongming Wu, Wenjun Lo, Wei Gerlach, Philipp Yang, Guowen DOGAIN Optoelect Technol SUZHOU Co Ltd Suzhou 215000 Peoples R China

ISBN: (纸本)9781510684386;9781510684393

Improving the output power of broad-area laser diodes (LDs) in the near-infrared spectrum (755 nm, 915 nm, and 1064 nm) is essential for industrial processing, laser pumping, scientific research, and medical applications. To achieve high output power, we implemented wider ridge waveguide and double-junction epitaxial designs from horizontal and vertical directions, respectively. We present comprehensive results of high-power single-emitter and bar LDs covering wavelength range from 755 to 1064 nm. For single-emitter LDs, we developed ridge waveguide widths from 500 to 700 mu m in single-junction LDs, achieving a continuous-wave (CW) maximum output power of 95 W at 915 nm under room temperature, limited by heatsink temperature control. Additionally, we demonstrated a double-junction LD at 755 nm, delivering 78.5 W quasi-continuous-wave (200 mu s, 50 Hz) output power at 40 A and 25 degrees C, which is 1.85 times higher than single-junction LDs with the same waveguide width. Furthermore, our double-junction laser bars operated at quasi-continuous-wave 1000 A with 1920 W output at 1064 nm. These results highlight significant advancements in achieving high-power LDs across different spatial structures and wavelengths, enhancing their utility for various applications.

关键词： Semiconductor laser laser diode high power

来源：评论

学校读者我要写书评

暂无评论

LLC laser Driver for laser Wireless power Transfer Application 6

LLC Laser Driver for Laser Wireless Power Transfer Applicati...

引用

6th Global power, Energy and Communication conference (GPECOM)

作者： Yigit, Hayri Boynuegri, A. Rifat Tekgun, Burak Yildiz Tech Univ Elect Engn Istanbul Turkiye Yildiz Tech Univ Elect Engn & Clean Energy Technol Inst Istanbul Turkiye Abdullah Gul Univ Elect Elect Engn Kayseri Turkiye

ISBN: (纸本)9798350351088;9798350351095

laser Wireless power Transfer (LWPT) represents a cutting-edge technology for the long-range transmission of energy, distinguished by its capability for high-power transfer and adaptability to mobile applications. The effectiveness of this system is significantly tied to its transmitter component, comprising the laser diode (LD) and its associated driving circuitry. This research address to enhance system efficiency by introducing a specially designed LLC converter circuit, aimed at improving the overall efficiency of both the driver circuit and the LD driving process while minimizing current ripple. The proposed circuit underwent comprehensive simulation using MATLAB/SIMULINK, resulting in noteworthy outcomes that showcased an impressive efficiency of 98.44% within the LD driver circuit.

关键词： laser power transfer LLC converter laser diode LD driver wireless power transfer

来源：评论

学校读者我要写书评

暂无评论

Demonstrating FBG capabilities in wavelength locking multimode laser diodes 23

Demonstrating FBG capabilities in wavelength locking multimo...

引用

2025 conference on high power diode laser technology-Annual

作者： Gouin, Samuel Gagnon, Mathieu Perron, Alexandre Munger, Simon Brochu, Guillaume Begin, Michel Faucher, Dominic Trepanier, Francois TeraXion inc 2716 Einstein Quebec City G1P 4S8 PQ Canada

ISBN: (纸本)9781510684386;9781510684393

This presentation examines the efficacy of Fiber Bragg Gratings (FBGs) in multimode fibers for wavelength locking of high-power laser diode modules. The study demonstrates successful locking of a 125W multi-emitter module at 976 nm across its entire current range. Notably, the same module was used to directly compare FBG performance with that of Volume Bragg Gratings (VBGs), ensuring a controlled comparison. Results indicate that FBGs achieve pump absorption efficiency comparable to VBGs, while potentially offering advantages in power handling and bandwidth flexibility. The research explores implications for simplified module design and improved direct diode systems, suggesting promising applications for FBGs in wavelength locking at 976nm, 780.2nm, and 88Xnm. Future work aims to investigate higher power levels and smaller linewidths.

关键词： Fiber Bragg Gratings (FBGs) Wavelength locking Multimode laser diodes high-power pump modules Volume Bragg Gratings (VBGs) 976 nm diode lasers

来源：评论

学校读者我要写书评

暂无评论

high Efficiency On-chip Wavelength-stabilized laser diodes 22

High Efficiency On-chip Wavelength-stabilized Laser Diodes

引用

conference on high-power diode laser technology Xxii

作者： Kanskar, M. Bao, L. Biekert, N. Chen, Z. DeFranza, M. Martin, E. Wilkins, B. Zhang, J. Zhang, S. nLIGHT Inc 4637 NW 18th Ave Camas WA 98607 USA

ISBN: (纸本)9781510669949;9781510669932

Yb-doped fiber laser and amplifiers are strong contenders as combinable sources used in power-scalable Spectral Beam Combined and Coherent Beam Combined high Energy laser (HEL) systems [1]. power levels well beyond 300kW is anticipated for HEL systems for DoD applications. Pumping these fiber amplifiers at 976 nm has become an imperative. Furthermore, technology demonstrations of HELs have resorted to slow turn-on time. This needs to change for fieldable HEL systems. The need for an "instant-on" of HEL beam on demand cannot be over emphasized. Pumping a fiber laser/amplifier on this strong absorption peak also leads to a reduction in cost due to the shorter fiber and higher threshold power for nonlinear effects such as Stimulated Raman Scattering (SRS) and Stimulated Brillouin Scattering (SBS). But the absorption band of Yb-doped fiber is very narrow (<5 nm) and very sharp drop-off occurs around the peak near 976 nm. nLIGHT has developed high-efficiency, OSL technology by incorporating into the semiconductor laser chip, a wavelength-selective element which forces the laser to operate only at the desired wavelength over all operating current (output power) and a wide range of operating temperature. Although wavelength-stabilization in semiconductor laser pumps have been done in the past using external Volume Bragg Gratings (VBGs) they are not as efficient for HEL application. Furthermore, VBG adds cost, mass and volume to the pump package. We have demonstrated nearly penalty-free wavelength-stabilized high power, high efficiency chips. These chips can be readily introduced into a fiber-coupled package without needing any modification to the opto-mechanical design of the package - a drop-in replacement to the current pump packages [2,3,4]. We have packaged them in a low SWaP fiber-coupled packages to produce >550W with 55% at 25C and >530W with >52% at 50C using wavelength-locked diodes with a narrow spectral bandwidth <0.4 nm at FWHM. The center wavelength shifts at

关键词： Fiber-coupled diode laser high brightness pump diodes diode laser brightness wavelength stabilized diode laser Low SWaP diodes 976 nm diodes

来源：评论

学校读者我要写书评

暂无评论

Lasing Mode Design of 1550nm Triple Junction laser diode for Timeof-Flight LiDAR and LRF 23

Lasing Mode Design of 1550nm Triple Junction Laser Diode for...

引用

2025 conference on high power diode laser technology-Annual

作者： Aboujja, Sidi Chu, Daniel SemiNex Corp 153 Andover StSuite 201 Danvers MA 01923 USA

ISBN: (纸本)9781510684386;9781510684393

Our proprietary Triple Junction laser diode at eye-safe 1550nm based on AlInGaAs/InP material systems can achieve high performances in LiDAR (light detection and range) and LRF (laser range finding) applications. Three monolithic laser structures with tunnel junction layers are designed to reduce mechanical stress with superior heat dissipation. It achieves 3x output power and 2x wall plug efficiency of a single junction with low operating voltage and high slope efficiency at 1W/A. The life test of Triple Junction laser diodes demonstrated long life under stressed electrical and thermal condition, almost 20 times higher than standard operation for automotive LiDAR. The reliability data based on Arrhenius conditions shows the estimated MTTF (mean time to failure) is 75k hours at 20 degrees C and 17k hours at 50 degrees C operating temperature, which is respectively 9.3x and 2.5x more than the required 8k hours in automotive applications. [1][2] laser Radar or LiDAR systems rely on the illumination of the far-field by the laser source to provide an accurate sampling of the object at a given distance. A triple junction diode laser can be designed to provide a single illumination spot in the far field by minimizing the tunnel junction absorption and optimizing the distance between the individual laser diodes. In this paper we report our further investigation on the optical modes and their characterizations, as we optimize the 1550nm Triple Junction laser diodes for various applications. It is noted that as we fine tune the quantum well stacks and the tunnel junctions, we can manipulate the lasing characteristics and the optical modes in each junction. We present various lasing modes under optimized design attributes, and how each lasing mode would contribute to the beam profile and the far field characteristics. This is the first time such design and analysis has been conducted on 1550nm Triple Junction high power laser diodes.

关键词： 1550nm edge emitting farfield high power laser diode IR LiDAR life test Mean time to failure MTTF multi-junction nearfield reliability triple junction tunnel junction

来源：评论

学校读者我要写书评

暂无评论

Efficient power Scaling of Broad-Area laser diodes from 915 to 1064 nm 22

Efficient Power Scaling of Broad-Area Laser Diodes from 915 ...

引用

conference on high-power diode laser technology Xxii

作者： Yang, Guowen Liu, Yuxian Zhao, Yuliang Lan, Yu Zhao, Yongming Tang, Song Wu, Wenjun Yao, Zhonghui Li, Ying Di, Jiuwen Lin Jixiang Demir, Abdullah Dogain Optoelect Technol Suzhou Co Ltd Suzhou 215000 Peoples R China Chinese Acad Sci Xian Inst Opt & Precis Mech State Key Lab Transient Opt & Photon Xian 710119 Peoples R China Univ Chinese Acad Sci Beijing 100049 Peoples R China Bilkent Univ UNAM Inst Mat Sci & Nanotechnol TR-06800 Ankara Turkiye

ISBN: (纸本)9781510669949;9781510669932

Our primary goal is to significantly enhance the output power of broad-area laser diodes (LDs) for improved cost-effectiveness of laser systems and broaden their applications in various fields. To achieve this, we implemented an epitaxial design with low internal optical loss and high internal efficiency in agreement with our simulations. We present comprehensive results of high-power single-emitter and bar LDs spanning wavelengths from 915 to 1064 nm. To demonstrate power scaling in single emitter LDs, we utilized waveguide widths from 100 to 500 mu m, achieving a continuous-wave (CW) maximum output power of 74 W at 976 nm under room temperature conditions, limited by the heatsink temperature control. We also build fiber-coupled modules with single-emitters operating at 1.6 kW. Employing the same epitaxial structure in 1-cm wide laser bars, we demonstrated 976 nm laser bars operated at 100 A CW with 113 W output and a high efficiency of 72.9% at room temperature. Additionally, we achieved 500 W room-temperature CW laser bars at 940 nm. For long wavelength designs at 1064 nm, 500 W output was obtained in quasi-continuous-wave (QCW) operating laser bars. Our results represent significant advancements in obtaining high power and efficient LDs across a broad wavelength range and configuration.

关键词： Semiconductor laser laser diode high power high efficiency

来源：评论

学校读者我要写书评

暂无评论

Reliable 940nm laser diode pump for automotive applications 23

Reliable 940nm laser diode pump for automotive applications

引用

2025 conference on high power diode laser technology-Annual

作者： Zhu, Cheng Zucker, Erik Wu, Yueting McDougall, Stewart Liu, Xiaohang Jiang, Ching-Long Boelen, Sander Grant, Alexander Liang, Xiaoshuang Hu, I-Ning Weed, Matthew Leisher, Paul Luminar Technol Inc 2603 Discovery DrSuite 100 Orlando FL 32826 USA Erik Zucker Consulting 1440 Pritchett Court Los Altos CA 94024 USA BWT Beijing Ltd 4A Hangfeng Rd Beijing 100070 Peoples R China TRUMPF Photon Inc 2601 Route 130 S Cranbury NJ 08512 USA Allegiant 3D Design & Mfg INC 169 Rue Joseph Carrier Vaudreuil Dorion J7V 5V5 PQ Canada

ISBN: (纸本)9781510684386;9781510684393

We present development work on 940nm pump diodes for automotive LIDAR applications. This study demonstrates the reliability of a 20W 2-pin pump diode module at extremely high junction temperature up to 155 degrees C. Activation energy and power acceleration values were then extracted from a life test and aligned with those reported in literature under low-stress conditions, which confirms adequate reliability for commercial automotive LIDAR application. This pump diode module also exhibits high efficiency of more than 40% over broad operating temperature range from -40 degrees C to +100 degrees C, which is critical to maintain low power consumption of the 1550nm fiber laser in LIDAR system. Furthermore, we also developed a mini-sized 10W fiber pigtailed diode module for cost and size reduction of the overall laser and LIDAR system.

关键词： LIDAR fiber-coupled diode package diode reliability multi-cell life test SWaP

来源：评论

学校读者我要写书评

暂无评论

Advancements in GaN DFBs with embedded gratings and a path to higher power 23

Advancements in GaN DFBs with embedded gratings and a path t...

引用

2025 conference on high power diode laser technology-Annual

作者： Anderson, Ryan Lee, Seunggeun Trageser, Emily Brown, Josh D. Zhang, Amy Zhang, Bin Huang, Carol Massimino, Tanner Gao, Qian Fernandes, Alanna Pinzone, Christopher J. Siskavich, Brad Mann, Ian DenBaars, Steven P. Nakamura, Shuji Haden, Jim BluGlass Ltd 74 Asquith St Silverwater NSW 2128 Australia Univ Calif Santa Barbara Mat Dept Santa Barbara CA 93107 USA

ISBN: (纸本)9781510684386;9781510684393

GaN-based distributed feedback (DFB) laser diodes are narrow linewidth sources promising for integration into low-size, weight, and power photonic circuits. There is a need to improve the linewidth, expand the availability of technologically useful wavelengths, and increase the power and efficiency for several applications. BluGlass presents advancements in visible wavelength DFB lasers. We will show measured device results achieving higher side-mode-suppression ratio of 40 dB and a peak full-width half maximum under 3 pm demonstrating near single frequency emission. Devices targeting critical atomic transition wavelengths for clocks, quantum computing, and other cold physics applications are covered spanning from 408 nm to 470 nm. A path toward narrow-band high-power DFB sources will be presented with preliminary data on gain in GaN-based semiconductor optical amplifiers.

关键词： GaN laser diode DFB SOA MOPA

来源：评论

学校读者我要写书评

暂无评论

Manufacturing and Reliability Analysis of high Brightness Blue Light Semiconductor laser 22

Manufacturing and Reliability Analysis of High Brightness Bl...

引用

conference on high-power diode laser technology Xxii

作者： Wu, Yueting Zhang, Fengchao Zhang, Xinning Zhang, Longtao Yu, Zhenkun Lang, Chao Chen, Xiaohua Ma, Wei BWT Beijing Ltd Beijing Peoples R China

ISBN: (纸本)9781510669949;9781510669932

The blue semiconductor laser with a wavelength range of 450nm has developed rapidly in recent years. For high-reflective and high-thermal conductive materials represented by copper, gold and high-strength aluminum, the absorption rate of blue laser is 5-10 times than infrared lasers. Blue laser can achieve high-quality and consistent welding results, stable melt pools and no spatter. With the development of blue semiconductor laser technology, there is a growing demand for higher brightness and reliability. Based on the practical application background, we have designed and implemented a stable high-brightness blue laser. Through BPP theory and ZEMAX simulation calculation, 48pcs TO-packaged 5.5W blue lasers are coupled into a 105 mu m core diameter 0.22NA fiber using polarization and optical fiber coupling technology. More than 250W output power is obtained with coupling efficiency exceeds 90% and electro-optical efficiency exceeds 35%. The high brightness blue laser has passed various reliability tests including accelerated aging for 7000 hours, 85 degrees C high temperature storage, -40 degrees C low temperature storage, -20 degrees C similar to 70 degrees C temperature cycling test, vibration and mechanical shock test. The stable high-brightness blue laser find significant applications in medical, 3D printing and welding.

关键词： blue laser high brightness high reliability fiber coupling

来源：评论

学校读者我要写书评

暂无评论

highly reliable, multi-watt continuous wave GaSb-based broad area diode lasers emitting around 2 μm 23

Highly reliable, multi-watt continuous wave GaSb-based broad...

引用

2025 conference on high power diode laser technology-Annual

作者： Boni, A. Wegelin, M. Fahrentz, F. Kaebe, A. Lumics GmbH Schwarze Pumpe Weg 16 D-12681 Berlin Germany

ISBN: (纸本)9781510684386;9781510684393

We have developed multi-watt continuous wave laser diodes based on the InGaSb/GaSb material system, emitting at an operating wavelength of 1.94 mu m for a wide range of medical/life science and industrial applications. high conversion efficiency, multi-watt output power, efficient fiber coupling, and extended lifetime are the primary requirements for these applications. The vertical design is epitaxially grown by molecular beam epitaxy (MBE), consisting of InGaSb multi quantum wells (MQWs) with GaSb barriers. This optimized vertical design is fabricated into single emitters with a 190 mu m stripe width and a 2.5 mm resonator length, and mounted p-side down on a CuW heatsink (thermal resistance = 3 K/W). The single emitter exhibits an output power of 2 W at 9.6 A with a power conversion efficiency of 23%, showing a peak power conversion efficiency of 29% at 4 A in continuous wave (CW) mode at T = 25 degrees C. The slope efficiency decreases from 0.27 to 0.20 W/A as the current increases from 4 A to the peak saturation current of 9.6 A. We performed a lifetime test at the maximum power level at 23 degrees C for 30 devices over 1000 hours. None of these devices showed any performance degradation due to catastrophic optical damage (COD) or catastrophic optical mirror damage (COMD).

关键词： Broad area lasers Mid-infrared lasers Antimonides GaSb InGaSb/GaSb diode laser high power epitaxial design semiconductor

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共143页 << < 1 2 3 4 5 6 7 8 9 10 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：