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检索条件"任意字段=Conference on High-Power Diode Laser Technology and Applications XII"

共 1429 条记录，以下是51-60 订阅

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high output power GaSb-based diode laser with narrow n-type cladding layer 12

High output power GaSb-based diode laser with narrow n-type ...

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conference on Semiconductor lasers and applications xii

作者： Chen Yihang Yang Yanzhao Wang Tianfang Yu Hongguang Shi Jianmei Zhang Guiming Wu Bin Yang Chengao Zhang Yu Xu Yingqiang Niu Zhichuan Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China Univ Chinese Acad Sci Coll Mat Sci & Optoelect Engn Beijing 100049 Peoples R China 41st Inst China Elect Technol Grp Corp Qingdao 266555 Peoples R China

ISBN: (纸本)9781510656895;9781510656888

high output power GaSb-based diode lasers are critical component for 2 mu m laser systems. We compare four structures with different layer thickness combinations to optimize lower cladding layer thickness. Four structures have similar optical confinement factor of active region. As the lower cladding layer thins, the threshold current increases and the series resistance slightly reduces. Among the four structures, laser with 370nm waveguide layer and 1200nm n-type cladding layer functions the best. An output power of 1.21W at 3A is obtained, the threshold current is 0.11A, the series resistance is 0.25 Omega, the slope efficiency is 0.42W/A.

关键词： GaSb-based diode laser MBE mid-infrared

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Advances in high power InAlGaAs/InP-based semiconductor lasers 23

Advances in high power InAlGaAs/InP-based semiconductor lase...

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2025 conference on high power diode laser technology-Annual

作者： Lammert, R. M. Oh, S. W. Panja, C. Braun, J. Hu, W. Yang, X. Ungar, J. E. Laser Operat LLC QPC Lasers 15632 Roxford St Sylmar CA 91342 USA

ISBN: (纸本)9781510684386;9781510684393

By improving material quality and structure design, laser Operations LLC has developed highly-efficient high-power InAlGaAs/InP broad area (BA) single emitter lasers at wavelengths ranging from 1210nm to 2060nm. These include 1270nm BA lasers with over 45% peak wall-plug-efficiencies (WPE) and > 9W Continuous Wave (CW) powers, 1460nm BA lasers with 42% peak WPEs and > 7W CW powers, 1925nm BA lasers with 25% peak WPEs and > 3.5W CW powers, all from devices mounted on thermal-expansion-match substrates with hard solder. Using the high-efficiency, narrow far-field 1460nm chips, modules were manufactured with > 250W output from 400um 0.22NA fiber. For the applications requiring tighter wavelength tolerance, such as solid state pumping, we implement internal gratings to narrow the spectral width and to reduce the wavelength tuning with temperature. 1530nm grating-locked lasers achieve nearly 40% WPEs and spectral widths of 0.6nm, which are nearly 10-times narrower than Fabry-Perot lasers at these wavelengths.

关键词： high-power Internal Gratings InAlGaAs Broad-Area

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laser diode Drivers for Rep-Rated DELPHI laser System

Laser Diode Drivers for Rep-Rated DELPHI Laser System

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2023 IEEE Pulsed power conference, PPC 2023

作者： Velas, Katherine Barillas, Cristopher Chemali, Alex Fulkerson, E.Stephen Gonzales, Anthony Koh, Edward Lew, Willie Telford, Steve Lawrence Livermore National Laboratory LivermoreCA United States

ISBN: (纸本)9798350332339

The Matter in Extreme Conditions Upgrade (MECU) project is a major upgrade to the MEC instrument on the Linac Coherent Light Source (LCLS) X-ray free electron laser (XFEL) user facility at SLAC National Accelerator Laboratory. The MEC instrument combines the XFEL with a high-power, short-pulse laser and high energy shock driver to produce and study high energy density plasmas and materials found in extreme environments such as the interior of stars and fusion reactors, providing the fundamental understanding needed for applications ranging from astronomy to fusion energy. Lawrence Livermore National Laboratory (LLNL) is developing a Dual-mode Energetic laser for Plasma and high Intensity Science (DELPHI) to be installed in the upgraded MEC facility. DELPHI uses high-power diode arrays to pump >5 MW of total optical peak power into a helium gas-cooled Nd:glass main amplifier to produce 150 J pulses compressible to 150 fs at 10 Hz. Each diode array is composed of diode stacks that are driven by a single pulsed driver that contains the energy storage, drive circuitry, and arbitrary waveform control necessary to tailor the optical output of an individual diode stack. The diode drivers for DELPHI are an upgrade of the technology developed for the high rep-rate Advanced Petawatt laser System (HAPLS) that LLNL deployed to the Extreme Light Infrastructure Beamlines (ELI-Beamlines) in the Czech Republic in 2018. The individual DELPHI pulsers are designed to operate up to 600 A at 125 V with a pulse width up to 400 μ s at 10 Hz and have extended capabilities for even higher-power applications. Conceptual design and capabilities of the pulsed power drivers will be presented. © 2023 IEEE.

关键词： Conceptual design

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Advances in fiber coupled high power diode laser modules at 793 nm and 976 nm for defense applications 20

Advances in fiber coupled high power diode laser modules at ...

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conference on high-power diode laser technology XX at SPIE LASE conference

作者： Koenning, Tobias Ahlert, Sandra Weimar, Jan Steinborn-Knuth, Ruth Ahnepohl, Florian Kissel, Heiko Koehler, Bernd Klein, Markus Liu, Guoli Lehkonen, Sami COHERENT Galileo Galilei Str 10 D-55129 Mainz Germany COHERENT 5100 Patrick Henry Dr Santa Clara CA 95054 USA

ISBN: (纸本)9781510648388;9781510648371

In addition to common parameters like wavelength, output power and brightness, requirements in defense vary from industrial products. Contrary to industrial applications, where key requirements are total cost of ownership and lifetime measured in operating hours, defense applications use size, weight and power (SWaP) as the key performance metrics. In addition, overall system efficiency is a crucial factor in saving space and weight. Reliability is typically measured in years of service with comparatively low overall laser on time and not in laser operating hours. We present new products based on the Coherent FACTOR series of fiber coupled high power diode laser modules, optimized for defense applications. Modules at 793 nm for Thulium fiber laser pumping and modules at 976 nm for Ytterbium fiber laser pumping are presented. Compared to industrial FACTOR series modules, these devices are optimized for highest output power and low weight compared to their industrial counter parts. Modules are designed, qualified and tested to ensure reliable operation in the demanding environmental conditions of defense applications. Modules at 793 nm ranging from 100 W to 500 W of output power are shown. The FACTOR-16 module is rated at 100 W from a 100 mu m 0.22 NA fiber. 500 W are achieved from a T-Bar based packaged equipped with a 200 mu m 0.2 NA fiber. At 976 nm, the new lightweight FACTOR-16 package with 150 W from a 100 mu m 0.22 NA fiber is shown. In addition, power scaling results from FACTOR- 22 and FACTOR-44 modules with power levels of 400 W and 600 W respectively are presented.

关键词： high-power diode laser high-brightness fiber lasers diode pumped solid state laser DPSSL Vanadate Ytterbium Thulium

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high-brightness fiber-coupled diode module using dense wavelength beam combining technology based on single emitter for material processing and fiber amplifier pumping 20

High-brightness fiber-coupled diode module using dense wavel...

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conference on high-power diode laser technology XX at SPIE LASE conference

作者： Yu, Hao Tan, Shaoyang Pan, Huadong Sun, Shujuan Lin, Pengyuan Hu, Huan Wang, Jun Suzhou Everbright Photon Co Ltd Suzhou 215163 Peoples R China Sichuan Univ Chengdu 610065 Peoples R China

ISBN: (纸本)9781510648388;9781510648371

Fiber-coupled diode modules have various applications in material processing and fiber laser pumping because of their high efficiency and high reliability. Commercial fiber-coupled diode modules using spatial beam combining and polarization beam combining cannot be employed in high-brightness applications, for example metal cutting, which demands a laser power exceeding 1 kW with a BPP of a few mm*mrad. Dense wavelength beam combining (DWBC) technology showed the possibility of further scaling-up the output power of fiber-coupled diode modules while maintaining the same beam quality that allows for fiber-coupled diode modules to be used in high-brightness applications. The efficiency, reliability, and brightness of fiber-coupled diode modules can be improved by using single emitters instead of laser diode bars as power sources in DWBC. Two types of high-brightness 100 mu m/0.22 NA 2kW fiber-coupled diode modules employing single-emitter-based DWBC technology, which have a wavelength range from 953 to 991nm with 50% efficiency and a narrower wavelength range with 48% efficiency respectively, were developed for material processing and Raman fiber amplifier pumping. Furthermore, we combined 15 high-brightness 100 mu m/0.22 NA 1.4kW fiber-coupled diode modules into a 600 mu m/0.22 NA fiber, achieving more than 22kW at the output.

关键词： Dense wavelength beam combining single emitter high brightness fiber-coupled module

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Material efficient production of Functionally Graded Materials using coaxial laser Double-Wire Directed Energy Deposition 12

Material efficient production of Functionally Graded Materia...

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conference on high-power laser Materials Processing - applications, Diagnostics, and Systems xii

作者： Schwarz, Nick Lammers, Marius Hermsdorf, Jorg Kaierle, Stefan Ahlers, Henning Lachmayer, Roland Laser Zentrum Hannover eV Hollerithallee 8 D-30419 Hannover Germany Univ Appl Sci & Arts Ricklinger Stadtweg 120 D-30459 Hannover Germany Inst Transport & Automat Technol Univ 2 D-30823 Garbsen Germany Inst Prod Dev Univ 1 D-30823 Garbsen Germany

ISBN: (纸本)9781510659339;9781510659346

The coaxial laser Double-wire Directed Energy Deposition (LD-DED) process is capable of providing two wire materials simultaneously into a common processing zone. Thus, in-situ production of alloys in a local manner or across the entire sample can be realized with the characteristic high material utilization of the laser wire Directed Energy Deposition (DED) processes. Fabricated samples show a homogenous distribution of alloying elements across single welding seams enabling a functionally graded transition zone along multi-layer samples. This work shows the potentials of the LD-DED process for the production of Functional Graded Materials (FGM). Therefore, the process is displayed and single welding seams are examined regarding the element distribution along the seam with a graded material distribution. The samples are produced with a horizontally graded material transition using 1.4430 and 1.4718 stainless steel wires. All samples are fabricated using the multiple diode Coaxial laser (DiCoLas) processing head of the laser Zentrum Hannover e.V. The processing head provides the materials under a small angle of incidence and utilizes three fiber coupled laser diodes to supply the necessary thermal energy for the melting process of the base and wire materials. Using Energy-Dispersive X-ray spectroscopy (EDX) line-scans and mappings to determine the element constituents along the cross-section, a graded transition of elements in the horizontal direction can be detected. Images captured with a Keyence VK-X1100 3D-laser-scanning microscope provide information of the cross-section quality regarding material defects and surface quality. Furthermore, the Vickers hardness progression along the building direction is measured.

关键词： DiCoLas Functional Graded Material laser Double-wire Directed Energy Deposition DED

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Method to reduce the smile of high-power diode laser bar by balancing the thermal-induced stress 12

Method to reduce the smile of high-power diode laser bar by ...

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conference on Semiconductor lasers and applications xii

作者： Si, Tingyu Zhou, Xuyan Wu, Yangqing Zhang, Jianxin Li, Tongtong Jiang, Yi Qufu Normal Univ Sch Phys & Phys Engn 57 Jingxuan West Rd Jining 273165 Shandong Peoples R China Weifang Acad Adv Optoelect Circuits 195 Ind 1st St Weifang 261000 Shandong Peoples R China Chinese Acad Sci Inst Semicond Lab Solid State Optoelect Informat Technol 35A Qinghua East Rd Beijing 100083 Peoples R China Weifang Univ Sch Phys & Elect Informat 5147 Dongfeng East St Weifang 261061 Shandong Peoples R China

ISBN: (纸本)9781510656895;9781510656888

The smile effect of the laser bar increases the difficulty of laser beam coupling and limits its application. In this paper, the smile effect in the high-power laser on the microchannel cooler (MCC) and the method of reducing the smile effect by balancing the thermal-induced stress are studied. The model of diode laser packaging with MCC is established based on the finite-element method (FEM). The effect of the thickness of the N-foil on the smile effect and stress is analyzed. The bar is bent into a convex shape after the bar is bonded to the heat sink, according to the simulation. With the increase of the thickness of the N-foil, the bar deformation gradually decreases, and then the middle part of the bar reversely increases. The thermal-induced stress on the bar is balanced by optimizing the thickness of the N-foil. The minimum deformation was less than 0.2 mu m.

关键词： Smile effect Thermal-induced stress high power diode laser bar Microchannel cooler

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A compact killowatt-level QCW high-power semiconductor laser array based on dual-chip integration 12

A compact killowatt-level QCW high-power semiconductor laser...

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conference on Semiconductor lasers and applications xii

作者： Zhang, Pu Ren, Wenzhen Wang, Bo Zhu, Xiangping Yang, Junhong Key & Core Technol Innovat Inst Greater Bay Bldg B311 Kaiyuan Ave Guangzhou 510535 Guangdong Peoples R China Chinese Acad Sci Xian Inst Opt & Precis Mech State Key Lab Transient Opt & Photon 17 Xinxi RdNew Ind Pk Xian 710119 Shaanxi Peoples R China Univ Chinese Acad Sci 19 Yuquan Rd Beijing 100049 Peoples R China

ISBN: (纸本)9781510656895;9781510656888

With the increase of output power, more heat generation and higher operation current have become important issues, which affect the electrical-optical performance and reliability of high power semiconductor lasers. For the past several years, high power semiconductor laser chips utilizing double or triple quantum wells have been developed to achieve higher output power. However, the operation current of diode laser chips with double or triple quantum wells is much higher than that with single quantum well. diode laser chips with double or triple quantum wells could only operate at a much lower duty cycle. In this paper, a compact quasi-continuous wave (QCW) high power semiconductor laser array based on dual-chip integration techniques has been developed. For this packaging structure, two diode laser bars were welded above and below a micro-channel heat sink, without significant increase in volume. By means of this integration method, the output power of the semiconductor laser could reach kilowatt-level at a lower operation current. The thermal behavior of the semiconductor laser array with different operation parameters was carried out using finite element method. The structure parameters of semiconductor laser array based on dual-chip integration were optimized and characterized. The output power is 1485 W operated at a current of 700 A and the maximum electro-optical efficiency is 75%, which is the record-high level for a high power semiconductor laser array.

关键词： high-power semiconductor laser packaging dual-chip

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Robust high-power single-mode semiconductor optical amplifiers at 1550 nm for free space optical communications 19

Robust high-power single-mode semiconductor optical amplifie...

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conference on laser technology for Defense and Security XIX

作者： Labrecque, Michelle Campbell, Jenna Chu, Allen McClune, Kevin Estrella, Steven Burke, Elliot Liu, Thomas Garrett, Henry Larkins, Matthew Kinney, Sarah Morrison, Gordon Johansson, Leif Mashanovitch, Milan Leisher, Paul Freedom Photon LLC 41 Aero Camino Santa Barbara CA 93117 USA Luminar Technologies Inc 12601 Res Pkwy Orlando FL 32826 USA

ISBN: (纸本)9781510673779;9781510673762

Watt-class semiconductor optical amplifiers (SOAs) at 1550 nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including free space optical communications (FSO), with the potential to be more efficient, compact, and cost-effective while providing high-power diffraction-limited output. We present a single mode fiber- coupled packaged SOA delivering > 30 dBm (1.2 W) of continuous wave ex-fiber power at 1550 nm [1] with 16 dB of overall gain, enabled by recent advancements in diffraction-limited output from tapered semiconductor amplifiers. Preliminary data communications measurements are presented, with an open eye diagram achieved with > 1W of output power at 10 Gbps using the differential phase shift keying (DPSK) communications format. Watt-class collimated and fiber-coupled SOAs are available and being shipped to customers now.

关键词： high power diode lasers high beam quality high brightness sources free space optical communications 1550 nm semiconductor optical amplifier

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high-power Microsecond Near Diffraction Limited 2.94μm Er:YAG laser for Diverse applications 34

High-Power Microsecond Near Diffraction Limited 2.94μm Er:Y...

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2025 conference on Solid State lasers

作者： Do, Binh Skolnik, Laryssa Skolnik, Jay Thong Nguyen 3 Micron Laser Technol Indianapolis IN 46219 USA

ISBN: (纸本)9781510684300;9781510684317

This work explores the applications of a microsecond near diffraction limited Er:YAG lasers operating at 2.94 mu m. This laser offers unique capabilities due to its wavelength's strong absorption in water and hydroxyapatite. Pumping Mid-Infrared lasers: The 2.94 mu m laser efficiently pumps mid-infrared (MWIR) Fe:ZnSe lasers, enabling generation of diffraction-limited, high average power, radiation in the 4-5 mu m range, suitable for free-space propagation. Additionally, it also serves as a pump source for femtosecond MWIR Fe:ZnSe amplifiers. Medical applications: Microsecond 2.94 mu m nearly diffraction limited Er:YAG lasers hold promise for precise bone cutting and drilling, potentially replacing traditional drills and saws in spinal procedures and skull surgery. Industrial applications: Their ability to cut and drill glass & semiconductors makes them valuable tools for industrial processing. Advanced Processes: The short absorption length of 2.94 mu m radiation in water opens doors for applications like localized heating and manipulation of aqueous media, including collapsing bubbles and sound wave generation.

关键词： diffraction limited Fe:ZnSe Er:YAG diode-pumped MWIR bone cutting

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