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检索条件"任意字段=Conference on High-Power Diode Laser Technology and Applications XII"

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Study of thermal characteristics of high-power photonic crystal laser diodes with CS-mount package 12

Study of thermal characteristics of high-power photonic crys...

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conference on Semiconductor lasers and applications xii

作者： Zhang, Yu Qu, Hongwei Liu, Guangqiang Zhou, Xuyan Zhan, Jianxin Qi, Aiyi Wang, Yufei Sui, Jiatong Zheng, Meihao Qufu Normal Univ Sch Phys & Phys Engn 57 Jingxuan West Rd Jining 273165 Shandong Peoples R China Weifang Acad Adv Optoelect Circuits 195 Ind 1st St Weifang 261000 Shandong Peoples R China Chinese Acad Sci Lab Solid State Optoelect Informat Technol Inst Semicond 35A Qinghua East Rd Beijing 100083 Peoples R China Weifang Univ Sch Phys & Elect Informat 5147 Dongfeng East St Weifang 261061 Shandong Peoples R China

ISBN: (纸本)9781510656895;9781510656888

Photonic crystal laser diodes are characterized by low divergence angle and high brightness, but thermal effects have become a major obstacle to further improvement of output power and efficiency. The thermal characteristics of high-power photonic crystal laser diodes are of great importance to improve the output power and increase the lifetime. In this paper, the physical heat dissipation model of a single photonic crystal laser diode with CS-mount package is established. Steady-state thermal characteristics simulations are performed using the finite element method (FEM) and the influences of different parameters, such as solder, transition heat sink and heat sink on the thermal characteristics are analyzed. The simulation results show that the thickness and thermal conductivity of the heat sink materials are the main factors impacting the heat dissipation of the laser. The thermal resistance of the laser can be reduced effectively by using heat sink materials of high thermal conductivity. On the premise of ensuring wettability and reliability, the thickness of the solder layer should be decreased. A photonic crystal laser diode with a cavity length of 4 mm and a stripe width of 350 mu m based on an optimized heat dissipation structure is designed and fabricated. The CW output power of 41.9 W, the vertical divergence angle of 18.48 degrees and the thermal resistance of 1.54 K/W are obtained under the injection current of 50 A at 20 degrees C.

关键词： high power Photonic crystal laser diodes Thermal characteristics FEM Thermal resistance CS-mount package

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4XX nm diode-laser beyond 2 kW of output power 20

4XX nm diode-laser beyond 2 kW of output power

引用

conference on high-power diode laser technology XX at SPIE LASE conference

作者： Baumann, M. Ackermann, M. Balck, A. Bonhoff, T. Botter, O. Lange, R. Models, S. Dinakaran, D. Koesters, A. Krause, V Emde, B. Zimbelmann, S. Hermsdorf, J. Kaierle, S. von Waldegge, T. Heusinger Laserline GmbH D-56218 Mulheim Germany Laser Zentrum Hannover eV Hollerithallee 8 D-30419 Hannover Germany Frounhofer Inst Fertigungstech & Angew Mat Forsch Wiener Str 12 D-28359 Bremen Germany

ISBN: (纸本)9781510648388;9781510648371

Since the first blue lasers made from GaN-based semiconductors reached power levels making them suitable for industrial applications a few years ago, users where asking for more power. Quickly, output powers for fiber-coupled diode lasers increased from several hundred watts in early 2018 [1] to 1000 W in 2019 [2] and even 2000 W in 2020 [3]. But lifetime has always been an object of concern since the blue diode-laser moved out of the TO-can to enter the high power world. As part of the research project "FoulLas", which started in 2019 and is funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWi), laserline took on the task of developing a cw fiber-coupled diode-laser exceeding 2 kW blue laser power for fouling removal of vessels and submarine structures. Caused by stronger restrictions on the use of biocide containing coatings for ship hulls, new strategies against marine fouling moved into the focus of development activities. A new approach is to lethally damage the microorganisms on the subsea surfaces by laser irradiation to be washed away by the streaming water. Apart from that, they can no longer contribute to the spread of species. This paper covers concepts and possibilities of power increase beyond 2 kW for fiber-coupled lasers based on blue diode-laser bars. Results of a laser with more than 2 kW output power are presented. In addition, new findings on degradation processes and lifetime tests are reported. To tie in with the application, insights into the maritime application of fouling removal are given.

关键词： fiber-coupled diode-laser blue laser bar high-power GaN laser diodes fouling removal

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Output parameters optimization of Q-switched Nd:YAG/V:YAG microchip laser generating at 1.34 μm 33

Output parameters optimization of Q-switched Nd:YAG/V:YAG mi...

引用

conference on Solid State lasers XXxiiI - technology and Devices

作者： Kadlec, Krystof Sulc, Jan Jelinkova, Helena Nejezchleb, Karel Czech Tech Univ FNSPE Brehova 7 Prague 11519 Czech Republic Crytur Ltd Lukach 2283 Turnov 51101 Czech Republic

ISBN: (纸本)9781510669888;9781510669871

Q-switched microchip lasers are very compact sources of directional radiation. To construct such a radiation source in the 1.3 mu m spectral region, Nd:YAG active medium with V:YAG saturable absorber can be used. Radiation in this spectral range is safer for the eye in comparison with 1.06 mu m radiation due to its higher absorption in the water. For this reason, Nd:YAG/V:YAG microchip laser could be suitable for free-space light manipulation applications such as LIDARs. Nd:YAG/V:YAG microchip lasers and optimization of their output parameters based on diode-pumping beam parameters variation are presented here. For this optimization, aspheric lenses were used, which made it possible to increase the pumping beam area in the waist more than four times from 0.13mm(2) to 0.58mm(2). Two Nd:YAG/V:YAG microchip lasers with a total length of 2.6mm and 4.7mm were tested. In both cases, the initial transmission of the V:YAG saturable absorber was 80% @ 1.34 mu m and the output coupler reflectivity was 90% @ 1.34 mu m. lasers were pumped longitudinally by a fiber-coupled laser diode (core diameter 400 mu m, numerical aperture 0.22) in a pulse regime at a wavelength of around 805nm in the range of repetition frequencies of 10 - 1000 Hz. Both Nd:YAG/V:YAG lasers provided Q-switched pulses at a wavelength of 1338 nm. By increasing the pumping beam area it was possible to achieve almost twice as high pulse energy and peak power up to 76 mu J and 85kW using a 2.6mm long laser. In the case of a 4.7mm long laser, the pulse energy and peak power increased more than four times up to 139 mu J and 84 kW. The output pulse duration hardly depended on used pumping optics and its mean value was 0.92 ns/2.6mm and 1.91 ns/4.7 mm. higher spatial transverse modes were not observed for most pumping pulse repetition frequencies.

关键词： Microchip lasers diode-pumped solid-state laser Nd:YAG active medium V:YAG saturable absorber pumping optics

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1550nm Triple Junction laser diode for Long Range LiDAR 20

1550nm Triple Junction Laser Diode for Long Range LiDAR

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conference on high-power diode laser technology XX at SPIE LASE conference

作者： Aboujja, Sidi Chu, Daniel Bean, David SemiNex Corp 153 Andover StSuite 201 Danvers MA 01923 USA

ISBN: (纸本)9781510648388;9781510648371

We present a triple junction high power laser diode at 1550nm based on AlInGaAs/InP material system. The device was developed, fabricated, and tested. The laser stacks three AlInGaAs lasers epitaxially connected by two tunnel junctions and grown on InP substrate. The monolithic laser structure with tunnel junction layers is designed in a way to reduce the stress and improve the heat dissipation. Each tunnel junctions is formed with an n-type InGaAs layer and a p-type InGaAs layer. The active area of each junction comprises AlInGaAs barrier and quantum well layers. The design leads to three times the output power of a single junction laser and reaches 1W/A slope efficiency. We demonstrate over 100W peak optical output power at 100A with a 350 mu m aperture and 10 nsec pulse width. A low operating voltage can be achieved with such triple junction design, thus the wall-plug efficiency is two times better. The monolithic triple junction with overall small source size allows efficient optic or fiber coupling, and is an ideal source for applications such as long range LiDAR. Using this new triple junction 1550nm laser diode we benchmark against 905nm in a single-emitter LiDAR for performance comparison. By considering eye safety standards, distance, target reflectivity, and atmospheric loss, the photon budget of 1550nm triple junction can be 80 times more than 905nm. With such advantage, a LiDAR with the new 1550nm triple junction can outperform 905nm by more than 60 times in SNR and more than 24 times in detection probability at a distance longer than 200m.

关键词： 1550nm triple junction multi-junction edge emitting tunnel junction high power laser diode IR LiDAR

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Analysis of thermal characteristics of microchannel-cooled photonic crystal laser diode bars 12

Analysis of thermal characteristics of microchannel-cooled p...

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conference on Semiconductor lasers and applications xii

作者： Zheng, Meihao Qu, Hongwei Liu, Guangqiang Zhou, Xuyan Zhang, Jianxin Qi, Aiyi Sui, Jiatong Zhang, Yu Qufu Normal Univ Sch Phys & Phys Engn 57 Jingxuan West Rd Jining 273165 Shandong Peoples R China Weifang Acad Adv Optoelect Circuits 195 Ind 1st St Weifang 261000 Shandong Peoples R China Chinese Acad Sci Lab Solid State Optoelect Informat Technol Inst Semicond 35A Qinghua East Rd Beijing 100083 Peoples R China Weifang Univ Sch Phys & Elect Informat 5147 Dongfeng East St Weifang 261061 Shandong Peoples R China

ISBN: (纸本)9781510656895;9781510656888

Photonic crystal laser diode bars have the advantages of low vertical divergence angle and high resistance to catastrophic optical mirror damage. However, with the increase of output power, the waste heat problem is becoming more serious, affecting the further improvement of laser performance. Therefore, it is of great significance to study the thermal characteristics of bars. In this paper, the fluid-solid coupling conjugate heat transfer model of a microchannel cooled photonic crystal laser diode bar is established through the finite element method (FEM) and computational fluid dynamics (CFD) numerical methods. The transient thermal behavior, steady-state characteristics, and temperature distribution of photonic crystal laser diode bars under continuous (CW) operating states are studied in detail. The simulation results show that the junction temperature is 55.48 degrees C, and the thermal resistance is 0.48 K/W. The closer the emitter is to the bar center, the easier the thermal crosstalk occurs. In the experiment, the continuous output power of the photonic crystal laser bar is 112.13 W at 120 A, the junction temperature is 57.14 degrees C, and the thermal resistance is 0.50 K/W. The simulations of bars are consistent with the experiment.

关键词： photonic crystal laser diode bar micro-channel cooling thermal properties thermal crosstalk

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high-power Single-Frequency VECSEL Platform for Quantum technology

High-Power Single-Frequency VECSEL Platform for Quantum Tech...

引用

Optica Quantum 2.0 conference and Exhibition, Quantum 2.0

作者： Penttinen, Jussi-Pekka Kantola, Emmi Uusitalo, Topi Ranta, Sanna Hietalahti, Arttu Vuohenkunnas, Roope Reuna, Jarno Guina, Mircea Vexlum Ltd Kauhakorvenkatu 53 B Tampere33710 Finland

ISBN: (纸本)9781957171272

Vertical-external-cavity surface-emitting lasers (VECSEL) have emerged as a very attractive platform for quantum technology applications utilizing ions, atoms, and molecules. This laser platform exhibits a unique combination of features including, high-power single-frequency operation, small SWaP-C parameter, and the ability to cover a broad wavelength range from the ultraviolet, to visible and infrared extending to 2 µm. VECSEL-based systems have been already used in a wide variety of quantum information processing tasks, including spectroscopy, photoionization, and laser cooling. Progress in the development of commercial single-frequency VECSELs and application examples for selected atomic species, such Sr and Yb are reviewed. Recent experiments demonstrating new capability for wavelength versatility and frequency locking with linewidth narrowing to sub-Hz level are presented. ©2023TheAuthor(s)

关键词： Fiber lasers Information processing laser cooling Quantum information Solid state lasers Tunable diode lasers

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Degradation Processes in high-power Broad-Area lasers with Strained InGaAs-AlGaAs QW and InAs-GaAs QD Active Regions 20

Degradation Processes in High-Power Broad-Area Lasers with S...

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conference on high-power diode laser technology XX at SPIE LASE conference

作者： Sin, Yongkun Brodie, Miles Lingley, Zachary Ives, Neil Aerosp Corp Elect & Photon Lab El Segundo CA 90245 USA

ISBN: (纸本)9781510648388;9781510648371

high-power broad-area InGaAs-AlGaAs strained quantum well (QW) lasers are indispensable components for space satellite communications systems. However, their degradation mode (catastrophic and sudden degradation) due to catastrophic optical damage is a major concern for space applications. Furthermore, these lasers predominantly degrade by a new failure mode due to catastrophic optical bulk damage (COBD). Also, InAs-GaAs quantum dot (QD) lasers have recently received much attention as an alternative to QW lasers especially for space applications, but their degradation mechanism is not well understood. For the present study, we investigated high-power broad-area lasers with two different active regions: 9xx nm strained InGaAs-AlGaAs QW and similar to 1 mu m InAs-GaAs QD active regions. Both lasers had a window formed in backside n-metals. We performed accelerated life-tests, failure mode analyses, and physics of failure investigations using destructive and non-destructive techniques. First, we employed electroluminescence (EL) and time-resolved electroluminescence (TR-EL) techniques to study precursor signatures of failures including the formation of a hot spot through self-focusing of filaments and thermal lensing as well as the formation and propagation of dark line defects (DLDs) in degraded lasers during aging. Second, we employed high-resolution TEM techniques to study extended defects. Finally, we report our understanding on degradation processes in high-power broad-area QW and QD lasers.

关键词： high-power laser broad-area laser QW laser QD laser degradation process degradation mechanism

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The Effect of AuSn Preform Thickness on Thermal Transfer in Semiconductor laser Technologies 20

The Effect of AuSn Preform Thickness on Thermal Transfer in ...

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conference on high-power diode laser technology XX at SPIE LASE conference

作者： Gallery, Jenny Lytwynec, Samuel Indium Corp 301 Woods Pk DrSuite 301 Clinton NY 13323 USA

ISBN: (纸本)9781510648388;9781510648371

For the plethora of applications that require a high-melting die-attach solder, 80Au20Sn is a great choice to ensure good performance and reliability, especially when used in one of its most highly demanded applications: semiconductor laser die-attach. However, difficulty managing thermal heat transfer has prevented the widespread use of semiconductor lasers. When the operational heat of these devices increases, their longevity and potential become limited. One option to improve thermal transfer is the use a thinner 80Au20Sn preform in the bondline, which allows the heat to transfer to the heat sink more quickly and efficiently. The creation of voiding hot spots - due to the lack of solder volume - is a perceived concern when using a thinner preform in the solder joint, which then contradicts the original intention. Voiding percentages were defined for several 80Au20Sn preform thicknesses - ranging from 0.002 '' to 0.00035 '' thick - allowing for conclusions to be drawn on the effect of 80Au20Sn preform thickness on thermal transfer in semiconductor laser technologies.

关键词： laser die-attach semiconductor lasers thermal management voiding percentage

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high-DENSITY SINGLE-MODE laser ARRAYS FOR QUANTUM SYSTEMS 2

HIGH-DENSITY SINGLE-MODE LASER ARRAYS FOR QUANTUM SYSTEMS

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conference on Quantum Computing, Communication, and Simulation II Part of SPIE Photonics West OPTO conference

作者： Ulkuniemi, Riina Melanen, Petri Nikkinen, Jan Ovaskainen, Jari Uusimaa, Petteri Modulight Corp Hermiankatu 22 Tampere Finland

ISBN: (数字)9781510649026

ISBN: (纸本)9781510649026;9781510649019

Quantum systems have highly variable requirements and tailored solutions depending on the technology. For instance, lasers are used for quantum control of particles or molecules and excitation for quantum systems. For the latter purpose, suitable applications are frequency comb generation, timing sources for picosecond pulses, and single photon emitters(1,2,3). Key performance parameters for lasers used in this area are single-mode operation, narrow linewidth, and frequency stability. Wavelength of the lasers can vary from UV to NIR, as well as the optical output power. Narrow linewidth and frequency stability can be achieved with distributed feedback (DFB) or distributed Bragg reflector (DBR) lasers, when quarter-lambda phase shift is included, or with external cavities.(4) For enhancing performance and flexibility, such laser diodes can be fabricated as arrays, or even individually addressable laser diode arrays (IABs).(5) In this work, we report the state-of-the-art diode laser arrays scalable beyond 100 emitters per array, operating in single mode from 900 nm to 930 nm, enabling new possibilities for rising quantum system applications. Our array design enables high power levels per emitter and dense emitter pitch varying from 20 mu m to 100 mu m, offering opportunities for dense device design and flexibility for applications. The emitters show excellent uniformity and beam profiles throughout the array. Implementing individually addressable emitters to our design offers opportunities for improved control for more complex and demanding applications.

关键词： diode laser array diode array single-mode NIR laser quantum systems

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Metal 3d Printing Using high Brightness Blue laser Systems 20

Metal 3d Printing Using High Brightness Blue Laser Systems

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conference on high-power diode laser technology XX at SPIE LASE conference

作者： Finuf, M. Fritz, R. Boese, E. Zediker, M. S. NUBURU Inc 7442 S Tucson Way Centennial CO 80112 USA

ISBN: (纸本)9781510648388;9781510648371

Many industrially important reflective metals absorb blue light significantly better than they absorb longer wavelengths. That fundamental physical advantage has led to increasing adoption of high-quality, high-speed blue laser welding in e-mobility, energy storage, and consumer electronics applications, and it was anticipated that the blue laser would bring comparable advantages to additive manufacturing/3d printing. Here we report results from the first integration of the blue industrial laser into a scanner based powder bed fusion system, the EOS M100 additive manufacturing system. The tests were performed with two very different laser systems: the AO-650 (650Watts - 30 mm-mrad) and AI-200 (200Watts - 5 mm-mrad). Test articles were printed with SS316L powder and pure copper powders. The blue laser printed the SS316L parts twice as efficiently as the conventional IR laser. Following minimal process optimization, tensile bars were fabricated and tested resulting in a density of >99% and an ultimate tensile strength of 80,000 psi when printed with the blue laser, even in these preliminary tests. Blue industrial laser printing of copper test blocks achieved >97% full density on as-printed parts. The EOS M100 IR laser could not be tested on the copper because it did not have sufficient power to melt the powder. Here we summarize the integration of these lasers into 3d printing, and present initial test results.

关键词： Blue laser diode high power additive manufacturing 3d printing copper powder bed fusion stainless steel blown powder laser materials deposition reflective metal 3d printing

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