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2nd International conference on Advanced A-D and D-A Conversion Techniques and Their Applications

作者： MANNING, PA PERKINS, MCJ DEF RES AGCY MALVERNENGLAND

ISBN: (纸本)0852966172

Described in this paper is the signal conditioning architecture that minimises the power consumption and cost by using only high-resolution DAC components, and digitising directly only the resolution required by the display rather than that imposed by the detector array. The architecture described minimises the requirement for absolute accuracy in the presented devices.

关键词： infrared detectors

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Summarize on the scene-based noniniformity correction algorithms for IRFPA

Summarize on the scene-based noniniformity correction algori...

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infrared and photoelectronic imagers and detector devices

作者： Dong, Li-Quan Jin, Wei-Qi Sui, Jing Beijing Institute of Technology Department of Optical Engineering Beijing 100081 China

The infrared Focal Plane Array (IRFPA) is a key part of modern infrared system and thermal imaging system. Imaging with IRFPA is future development direction of infrared and thermal imaging system. However the most difficult problem associated with the IRFPA is intrinsic spatial photo-response non-uniformity. Although two- point or multi-point correction algorithms may correct the non-uniformity of IRFPAs, they can be limited by pixel nonlinearities and instabilities. So adaptive non-uniformity correction techniques are needed. Many researchers develop the methods of real-time correction based the scene being viewed. In this paper, we introduced eight scene-based real-time correction methods, such as: the approach of the whole frame correction, Kalman filtering correction, adaptive filtering correction, trace along trajectory correction, based on the scene moving analysis correction, the wavelet transform is used for design the low-pass filter correction, both of the high-pass filter and the artificial neural network correction, based on the application of wavelet filter, video sequences and registration, orthogonal least squares correction, etc. All these non-uniformity correction algorithms are deeply explored, and non-uniformity correction simulation experiments are carried. Finally we compare these algorithms with two-point correction algorithm.

关键词： infrared devices

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Large-area IR negative luminescent devices

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IEE PROCEEDINGS-OPTOELECTRONICS 2003年第4期150卷 371-375页

作者： Nash, GR Gordon, NT Ashley, T Erneny, MT Burke, TM Malvern Technol Ctr Malvern WR14 3PS Worcs England

Negative luminescent (NL) devices, which to an IR observer appear colder than they actually are, have a wide range of possible applications, including for use as IR sources in gas-sensing systems and as thermal radiation shields in IR cameras. Additionally, these devices can be used as calibration sources for very large IR focal plane arrays and have many potential advantages over conventional calibration sources, including high-speed operation (for multi-point correction) and low power consumption. For many of these applications a large area (similar to1 cm(2)) device which displays an, as large as possible, apparent temperature range is required. However, significant currents are required to reduce the carrier concentrations to the levels needed for maximum dynamic range. The authors have therefore used a novel micromachining technique to fabricate integrated optical concentrators in InSb/InAlSb and HgCdTe NL devices. Smaller area diodes can then be used to achieve the same absorption (e.g. for InSb an area reduction of 16 is possible) and the required currents are thus reduced. Recent results are presented from a large area (similar to0.86 cm(2)) medium wavelength (MW) device incorporating integrated optical concentrators. The reverse saturation current of the device was measured to be similar to2.3 A/cm(2), which is significantly smaller than the value of similar to9 A/cm(2) reported previously for similar devices without optical concentrators. In addition, the large apparent temperature drop of the device (similar to20 K for a detector of cut-off 6.5 mum) when under reverse bias, coupled with its large size, mean that this device would be appropriate for use as a calibration source for IR imagers.

关键词： High-speed operation Carrier density multipoint apparent temperature low power consumption concentrators(telecommunications) iridium infrared SOURCES Radiation shielding focal planes optical integration

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Improved Spectral Response Model for Backside Illuminated Photovoltaic devices

Improved Spectral Response Model for Backside Illuminated Ph...

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conference on infrared Systems and photoelectronic Technology III

作者： Wijewamasuriya, Priyalal S. Stapelbroek, M. G. D'Souza, A. I. USA Res Lab 2800 Powder Mill Rd Adelphi MD 20783 USA DRS Sensors & Targeting Syst Cypress CA 90630 USA

ISBN: (纸本)9780819472755

Backside illuminated detectors are sometimes fabricated on a thick substrates. In this work, we have calculated detector spectral response using the stack matrix approach. This matrix formulation first constructs a 2x2 "Stack Matrix" S that describes the optical properties of the complete stack from the detailed optical properties (as a function of wavelength) of each layer in the entire stack. The stack matrix relates the electric field strengths of the electromagnetic wave at the left of the stack to the electric field strengths of the electromagnetic waves at the right of the stack. The stack matrix S is constructed from the multiplication of matrices that track the phase and amplitude of the waves propagating across interfaces and from one side of a layer to the other side. From the detailed optical properties (as a function of wavelength) of each material layer, spectral response was calculated.

关键词： HgCdTe CdTe CdZnTe infrared detectors Quantum Efficiency Stack Matrix Spectral Response

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Novel Photodetector Design Using Open Circuit Voltage For Mid-wave infrared imagers 45

Novel Photodetector Design Using Open Circuit Voltage For Mi...

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conference on infrared Technology and Applications XLV

作者： Specht, Teressa Taghipour, Zahra Ronningen, Theodore J. Fragasse, Roman Tantawy, Ramy Smith, Shane Fuller, Earl Khalil, Waleed Krishna, Sanjay Ohio State Univ Dept Elect & Comp Engn 2015 Neil Ave Columbus OH 43210 USA Ohio State Univ ElectroSci Lab 1330 Kinnear Rd Columbus OH 43212 USA SK Infrared 1275 Kinnear Rd Columbus OH 43212 USA

ISBN: (数字)9781510626706

ISBN: (纸本)9781510626706

Strong motivation for low-cost infrared imaging devices over the past few years have given rise to advances in infrared detector technology, specifically in the mid-wave infrared (MWIR) region. With increasing demand for small pixel sizes and large format focal plane arrays (FPAs), the extreme complexity in realizing MWIR imagers is expected to increase in difficulty. In this work, a novel approach to provide improved infrared detection at high operating temperatures is proposed by integrating proven MWIR photovoltaic material and mature digital CMOS Image Sensor (CIS) technology in a resultant technology concept of an open circuit voltage photodetector (VocP). With this new approach to photon detection, the photosensitive material generates an open circuit voltage to control the drain current of a transistor. The drain current can then be considered the photocurrent in the proposed pixel design. The VocP design decouples the photocurrent from the pixel area, exploits the invariance of open circuit voltage to pixel dimensions, improves the detectors dark current, and results in higher sensitivity. The proposed approach also couples an infrared sensitive material to CIS technology that is well established and continues to be advanced for visible imagers. In this paper, initial research demonstrations and test results are presented to provide evidence of MWIR detection at high operating temperatures to prove the concept and modeling predictions for the sensitivity and dynamic range of VocP.

关键词： infrared detectors mid-wave infrared imaging high operating temperature infrared imagers open circuit voltage CMOS image sensor technology read out integrated circuits

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Further characterization of Rockwell Scientific LWIR HgCdTe detector arrays

Further characterization of Rockwell Scientific LWIR HgCdTe ...

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conference on infrared Systems and photoelectronic Technology

作者： Bacon, CM McMurtry, CW Pipher, JL Forrest, WJ Garnett, JD Lee, D Edwall, DD Univ Rochester Rochester NY 14627 USA

ISBN: (纸本)0819455016

Future infrared space missions will undoubtedly employ passively cooled focal plane arrays (T similar to 30K), as well as passively cooled telescopes. Most long-wave detector arrays (e.g. SiAs IBC) require cooling to temperatures of similar to 6-8K.(1) We have been working with Rockwell Scientific Company to produce greater than or equal to 10mum cutoff HgCdTe detector arrays that, at temperatures of similar to 30K, exhibit sufficiently low dark current and sufficiently high detective quantum efficiency, as well as high uniformity in these parameters, to be interesting for astronomy. Our goal is to achieve dark current below the target value of similar to 30e(-)/s/pixel with at least 60mV of actual reverse bias across the diodes at T similar to 30K. To this end, Rockwell Scientific Company has delivered three 10mum cutoff HgCdTe low dark current detector arrays with small capacitance diodes for characterization in Rochester. The most recent presentation(2) showed the remarkable preliminary performance of the first of these devices. We present further results on the first device along with results on the subsequent two deliveries.

关键词： Long Wave infrared (LWIR) detector HgCdTe dark current diode characterization infrared space missions passive cooling

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Focal plane detectors for the WISE 12-and 23-μm bands

Focal plane detectors for the WISE 12-and 23-μm bands

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conference on infrared Systems and photoelectronic Technology II

作者： Hogue, H. H. Mattson, R. B. Stapelbroek, M. G. Masterjohn, S. A. Larsen, M. F. Elwell, J. D. DRS Sensors & Targeting Syst Cypress CA 90630 USA Space Dynam Lab Logan UT USA

ISBN: (纸本)9780819468086

DRS Sensors & Targeting Systems, under contract to the Space Dynamics Laboratory of Utah State University, is providing the focal plane detector system for NASA's Wide-field infrared Survey Explorer (WISE). The focal plane detector system consists of two mercury cadmium telluride (MCT) focal plane module assemblies (FPMAs), two arsenic doped silicon (S1:AS) Blocked Impurity Band (BIB) FPMAs, electronics to drive the FPMAs and report digital data from them, and the cryogenic and ambient temperature cabling that connect the FPMAs and electronics. The MCT and Si:As BIB focal plane arrays (FPAs) utilized in the WISE FPMAs are both megapixel class indium-bump hybridized devices fabricated by Teledyne Imaging Systems and DRS Sensors & Targeting Systems, respectively. This paper reports performance of the WISE Si:As BIB FPAs that are used for the WISE 12- and 23-mu m wavelength bands.

关键词： infrared detectors focal plane arrays silicon detectors blocked impurity band detectors astronomy focal planes space telescopes

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Ultra-high frame CCD imagers

Ultra-high frame CCD imagers

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conference on Ultrahigh- and High-Speed Photography, Photonics and Videography

作者： Lowrance, JL Mastrocola, VJ Renda, GF Swain, PK Kabra, R Bhaskaran, M Tower, JR Levine, PA Princeton Scientific Instruments Inc. (United States) Sarnoff Corp. (United States)

ISBN: (纸本)0819450839

This paper describes the architecture, process technology, and performance of a family of high burst rate CCDs. These imagers employ high speed, low lag photo-detectors with local storage at each photo-detector to achieve image capture at rates greater than 106 frames per second. One imager has a 64 x 64 pixel array with 12 frames of storage. A second imager has a 80 x 160 array with 28 frames of storage, and the third imager has a 64 x 64 pixel array with 300 frames of storage. Application areas include capture of rapid mechanical motion, optical wavefront sensing, fluid cavitation research, combustion studies, plasma research and wind-tunnel-based gas dynamics research.

关键词： Imaging systems Charge-coupled devices Cameras Sensors infrared imaging Metals Photodetectors Quantum efficiency infrared radiation Image storage

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Towards 16 megapixel focal plane arrays

Towards 16 megapixel focal plane arrays

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conference on infrared Systems and photoelectronic Technology II

作者： Gunapala, S. D. Bandara, S. V. Liu, J. K. Mumolo, J. M. Hill, C. J. Ting, D. Z. Kurth, E. Woolaway, J. Levan, P. D. Tidrow, M. Z. CALTECH Jet Prop Lab 4800 Oak Grove Dr Pasadena CA 91109 USA FLIR Syst Inc Indigo Operat Goleta CA 93117 USA Air Force Res Lab Kirtland AFB NM 87117 USA Missile Def Agcy DV Washington DC 20301 USA

ISBN: (纸本)9780819468086

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEAT) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NEAT of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating temperatures respectively, with similar optical and background conditions. It is well known that III-V compound semiconductor materials such as GaAs, InP, etc. are easy to grow and process into devices. In addition, III-V compound semiconductors are available in large diameter wafers, up to 8-inches. Thus, III-V compound semiconductor based infrared focal plane technologies such as QWIP, InSb, and strain layer superlattices (SLS) are potential candidates for the development of large format focal planes such as 4096x4096 pixels and larger. In this paper, we will discuss the possibility of extending the infrared detector array size up to 16 megapixels.

关键词： infrared detectors maga-pixel QWIP dualband two-color infrared imaging focal plane arrays

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MWIR Imaging With Low Cost Colloidal Quantum Dot Films

MWIR Imaging With Low Cost Colloidal Quantum Dot Films

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conference on Optical Sensing, Imaging, and Photon Counting - Nanostructured devices and Applications

作者： Buurma, Christopher Pimpinella, Richard E. Ciani, Anthony J. Feldman, Jered S. Grein, Christoph H. Guyot-Sionnest, Philippe Sivananthan Labs 590 Terr Dr St H Bolingbrook IL 60440 USA Univ Chicago James Franck Inst 929 East 57th St Chicago IL 60637 USA

ISBN: (数字)9781510602588

ISBN: (纸本)9781510602571;9781510602588

Suspensions of HgTe colloidal quantum dots (CQD) are readily synthesized with infrared energy gaps between 3 and 12 microns. infrared photodetection using dried films of these CQDs has been demonstrated up to a cutoff wavelength of 12 microns. The synthesis of CQDs and the fabrication of detector devices employ bench-top chemistry techniques, leading to the potential for the easy manufacture of infrared photon detecting imagers at low cost. Recent electrical and optical measurements of these CQD films are discussed. Recent successful prototypes of complete focal plane arrays from CQD films and commercially-available ROICs are also described.

关键词： Staring arrays infrared radiation Mid-IR infrared imaging Quantum dots External quantum efficiency Readout integrated circuits Sensors infrared photography Photodetectors

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