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检索条件"任意字段=Conference on Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications"

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Micro-optical fabrication technologies for optical interconnection applications

Micro-optical fabrication technologies for optical interconn...

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conference on Optics in Computing 2000

作者： Taghizadeh, MR Heriot Watt Univ Dept Phys Diffract Opt Grp Edinburgh EH14 4AS Midlothian Scotland

ISBN: (纸本)0819437328

In recent years there has been a great deal of interest in the use of optical interconnection techniques within a digital electronic circuits. The Semiconductor Industry Association has highlighted the necessity of the optical approach in "The National Technology Roadmap for Semiconductors" in 1997 [1]. The availability of large space-bandwidth product, together with the potential inadequacies of copper, have usually been cited as the main advantages of optics over its electronic alternatives for interconnection applications. As more advanced and high density photonics devices in 2D format have been developed, the need for more advanced micro-optical components that allow the manipulation of light from, and interconnection between these arrays of devices in the third dimension, has grown with it. The rapid development of the field of diffractive optics (i.e. digital holography) and other micro-optical fabrication technologies over the past 20 years has to a major extent been motivated, and influenced by the requirements mentioned above. These elements have been able to provide solutions to problems, where conventional bulk optics offer no (elegant) solutions. They have proven to be particularly successful in providing fan-out, fan-in and optical interconnections of nonlocal and global permutations. [See ref. 1 and references therein]. The availability of more advanced fabrication technologies, similar to those in VLSI manufacturing, has allowed these surface-relief elements to become more efficient, easily reproducible and have more complex functionality. Here a number of available technologies for realising these optical interconnects will be described. I will primarily concentrate on the design, fabrication and applications of surface relief structures as well as refractive microlens arrays for use in a number of interconnection and switching systems. In addition, the role and advantages offered by diffractive microstructures in precise alignment of opto-electroni

关键词： Optical interconnects Chemical elements Semiconductors Copper Digital electronic circuits Digital holography Fabrication Optical components photonic devices Physics

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Synchronization in spread spectrum laser radar systems based on PMD-DLL

Synchronization in spread spectrum laser radar systems based...

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conference on Laser Radar Technology and applications V

作者： Buxbaum, B Schwarte, R Ringbeck, T Luan, X Zhang, Z Xu, Z Hess, H Univ Siegen INV D-57068 Siegen Germany

ISBN: (纸本)0819436615

This paper proposes a new optoelectronic delay locked loop (OE-DLL) and its use in optical ranging systems. The so called PMD-DLL receiver module is based on a novel electro-optical modulator (EOM), called the photonic Mixer Device (PMD). This sensor element is a semiconductor device, which combines fast optical sensing and mixing of incoherent light signals in one component part by its unique and powerful principle of operation. Integration of some simple additional on-chip components offers a high integrated electrooptical correlation unit. Simulations and experimental results have already impressively verified the operation principle of PMD structures, all realized in CMOS technology so far. Although other technologies are also promising candidates for the PMD realization they should not be further discussed in this contribution. The principle of the new DLL approach is intensively discussed in this paper. Theoretical analysis as well as experimental results of a realized PMD-DLL system are demonstrated and judged. Due to the operation principle of sophisticated PMD devices and their unique features, a correlation process may be realized in order to synchronize a reflected incoherent light wave with an electronic reference signal. The phase shift between both signals represents the distance to an obstacle and may be determined by means of the synchronization process. This new approach, avoiding so far needed critical components such as broadband amplifiers and mixers for the detection of small photo currents in optical distance measurement, offers an extremely fast and precise phase determination in ranging applications based on the time-of-flight (TOF) principle. However, the optical measurement signal may be incoherent - therefore a laser source is not needed imperatively. The kind of waveform used for the modulation of the light signal is variable and depends on the demands of every specific application. Even if there are plenty other alternatives (e.g., heter

关键词： photonic mixer device (PMD) smart pixel phase locked loop delay locked loop laser ranging time-of-flight (TOF) spread spectrum technology code division multiple access (CDMA) acquisition synchronization

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Recent advances in opto-electronic signal generation

Recent advances in opto-electronic signal generation

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IEEE International conference on Phased Array systems and Technology

作者： L. Maleki S. Yao Shouhua Huang Yu Ji V. Ilchenko Meirong Tu Jet Propulsion Laboratry California Institute of Technology Pasadena CA USA California Institute of Technology Pasadena CA US

In the past few years the application of optoelectronic techniques to microwave signal generation has culminated in the development of the opto-electronic oscillator (OEO). This unique device utilizes continuous light energy from a laser, in conjunction with an optoelectronic feedback loop including a long fiber delay, to produce high spectral purity signals at 10 GHz and higher. This performance is useful in a variety of communications and radar applications, but is particularly useful in photonic phased arrays. This is because the output of the OEO may be selected to be an electrical reference, or a high frequency reference modulated on an optical carrier. The latter configuration can provide for significant efficiency in photonic phased arrays, since otherwise a laser transmitter system would be required for the distribution of the electric signal. We have demonstrated the operation of OEO in several different configurations, previously. This includes the operation of a dual loop OEO, a coupled OEO (COEO), and an OEO based on an integrated laser/modulator device. In this paper we report on the demonstration of a compact 10 GHz OEO and its acceleration sensitivity performance. These latter results are of particular interest in applications with moving platforms. Finally we briefly describe our recent work towards the realization of an OEO on a chip.

关键词： Signal generators Phased arrays Optical modulation Optical transmitters Microwave devices Microwave theory and techniques Microwave generation Microwave oscillators Fiber lasers Laser feedback

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Modeling, simulation and synthesis of photonic integrated circuits using VHDL-AMS and FD-BPM

Modeling, simulation and synthesis of photonic integrated ci...

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conference on Physics and Simulation of Optoelectronic devices VII

作者： Koh, S Wu, DJ Ye, L Chen, J Univ Dayton Dept Elect & Comp Engn Kettering Lab 251 Dayton OH 45469 USA

ISBN: (纸本)0819430951

Increasingly the photonic integrated circuits (PICs) are becoming essential device and component for high-performance computer systems and telecommunication networks. With PIC's improved performance and diverse functionality, a hybrid electronic/photonic integrated circuits & systems are promising many exciting network applications. But there exists a need for a system-level CAD tool, which can model, simulate and synthesize electronic/photonic integrated circuits simultaneously and at multiple levels of abstraction. In this paper,we demonstrate a VHDL-based optoelectronic system modeling and simulation tool: Optoelectronic System Simulator (OSS), which can model, simulate and automatically synthesize PICs and hybrid electronic/photonic systems. The OSS is a conventional event-driven simulator integrated with circuit simulators and technology-dependent ordinary/partial differential equation (ODE/PDE) solver libraries. In particular, the OSS is capable of modeling and synthesizing complex waveguide networks in VHDL-based EDA environments by integrating a finite-difference beam propagation method (FD-BPM) and by automatically generating Auto-LISP layout scripts for PIC photomasks. The OSS supports multiple-level models with a system hierarchy support and it can generate a high-level behavioral model from a numerical FD-BPM simulation result. The use of OSS will be discussed with PIC design, modeling, and synthesis examples.

关键词： clocking multichip modules MEMS MOEMS I/O couplers integrated optics microstructures

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Different approaches for ensuring performance/reliability of Plastic Encapsulated Microcircuits (PEMs) in space applications

Different approaches for ensuring performance/reliability of...

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InterPACK '99: Pacific RIM/ASME International Intersociety electronics photonic Packaging conference 'Advances in electronic Packaging 1999'

作者： David Gerke, R. Sandor, Mike Agarwal, Shri Moor, Andrew F. Cooper, Kim A. Pasadena CA United States Laurel MD United States

Engineers within the commercial and aerospace industries are using trade-off and risk analysis to aid in reducing spacecraft system cost while increasing performance and maintaining high reliability. In many cases, Commercial Off-The-Shelf (COTS) components, which include Plastic Encapsulated Microcircuits (PEMs), are candidate packaging technologies for spacecrafts due to their lower cost, lower weight and enhanced functionality. Establishing and implementing a parts program that effectively and reliably makes use of these potentially less reliable, but state-of-the-art devices, has become a significant portion of the job for the parts engineer. Assembling a reliable high performance electronic system, which includes COTS components, requires that the end user assume a risk. To minimize the risk involved, companies have developed methodologies by which they use accelerated stress testing to assess the product and reduce the risk involved to the total system. Currently, there are no industry standard procedures for accomplishing this risk mitigation. This paper will present the approaches for reducing the risk of using PEMs devices in space flight systems as developed by two independent Laboratories. The JPL procedure involves primarily a tailored screening with accelerated stress philosophy while the APL procedure is primarily a lot qualification procedure. Both Laboratories successfully have reduced the risk of using the particular devices for their respective systems and mission requirements.

关键词： electronics packaging

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III-V membrane structures for tunable Fabry-Perot filters and sensor applications

III-V membrane structures for tunable Fabry-Perot filters an...

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conference on Optoelectronic and Microelectronic Materials and devices

作者： H.L. Hartnagel J. Pfeiffer K. Mutamba J. Peerlings R. Riemenschneider P. Meissner Institute for High Frequency Electronics Darmstadt University of Technology Darmstadt Germany

The introduction of III-V semiconductor technology in the field of micromechanics allowed the development of novel electronic and optoelectronic devices, in particular comprising actuator and sensor applications. In this work we report on InP-based micromachined Fabry-Perot microcavity structures for use as tunable optical filter application in telecommunication systems operating in the 1.55 /spl mu/m wavelength regime. Various approaches for the filter realization are discussed in terms of their technological constraints. Presented here are the results of bulk micromachined Fabry-Perot filters including thermal and electrostatic actuation principles for wavelength tuning. The moving mirror of the filter is implemented in the form of suspended semiconductor thin membrane structures. The influence of intrinsic mechanical stress in the membrane layers as well as actuation induced stress has been characterized in order to optimize the optical filter performance. Compound semiconductor micromachining technology enables the realization of mechanical and thermal sensor systems showing excellent and formerly not achievable performance. As an example we focused on a resonant-tunneling-diode (RTD) based concept for very sensitive stress and pressure sensing applications.

关键词： III-V semiconductor materials Biomembranes Fabry-Perot Optical filters Thermal stresses Optoelectronic devices Optoelectronic and photonic sensors Microcavities Electrostatic actuators Optical tuning

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Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE

Double heterojunction bipolar transistors with InP epitaxial...

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1997 International conference on Indium Phosphide and Related Materials (IPRM 97)

作者： Cowles, J Metzger, RA GutierrezAitken, A Brown, AS Streit, D Oki, A Kim, T Doolittle, A TRW Electronic Systems and Technology Div Redondo Beach United States

ISBN: (纸本)0780338995

Epitaxial layers containing phosphorus (P) find numerous applications in electronic and photonic devices such as GaInP/GaAs HBTs, InAlAs/InGaAs/InP double HBTs, GaP LEDs and InP/InGaAsP MQW lasers operating at 1.3-1.55 mu m. These structures have been realized traditionally either by MOCVD, GSMBE or CBE relying on highly toxic hydrides as the gas sources for phosphorus and arsenic. Solid-source MBE provides the simplest and most elegant solution for growing complex epitaxial structures, however, the unique physical properties of solid phosphorus make it difficult to grow P-containing layers. By using a recently developed phosphorus valved cracker, excellent InP heterostructures have been achieved. We have explored the use of InP active layers in InP-based HBT grown entirely by solid-source MBE and compared them to InAlAs/InGaAs HBTs.

关键词： Heterojunction bipolar transistors

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Technologies for large scale InP-based optoelectronic integrated circuits

Technologies for large scale InP-based optoelectronic integr...

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SPIE conference on Optoelectronic Integrated Circuits

作者： Forrest, SR Kim, DS Yu, S Thomson, J Xu, L Gokhale, M Dries, JC Garbuzov, D Studenkov, P Lange, M Olsen, GH Cohen, M Princeton Univ. (United States) Sensors Unlimited Inc. (United States)

ISBN: (纸本)081942417X

We discuss approaches to achieving large scale InP-based optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs). During the past several years, significant advances have been made in improving materials and device quality of InP-based materials such as InGaAs(P) for use in long wavelength communications systems and networks. Hence, we are currently on the threshold of realizing large scale (>500 device) OEICs from which will emerge a new generation of optoelectronic systems and applications, in analogy to what was achieved in the 1970's with the advent of Si-based electronic LSI. What remains to be demonstrated to bring this vision to practical reality is the demonstration of ''platform'' integration technologies where devices and circuits custom- designed for a wide range of applications can be realized using a common (and simple) epitaxial materials structure and fabrication process. For the last several years, we have developed such platform technologies, with our latest success being the demonstration of a 16x16 InGaAs/InP imaging array consisting of 272 field effect transistors and 256 p-i-n detectors. Other devices which have been demonstrated using this technology have been very high sensitivity switched photodiode receivers, and coherent optical receivers. The transmitter technology consists of a modified twin waveguide structure which allows for fabrication tolerant fabrication of photonic integrated circuits employing any combination of lasers, optical amplifiers, modulators and waveguides. The extremely high yield and simplicity of processing of such InP-based LSI circuits suggests that the scale of optoelectronic integration in this important materials system has reached a new, and highly useful level of sophistication.

关键词： photonic integrated circuits Waveguides Receivers Field effect transistors Optoelectronics Indium gallium arsenide Sensors Cladding Integrated optics Modulators

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Silicon carbide temperature-tolerant power electronics for dual use systems applications

Silicon carbide temperature-tolerant power electronics for d...

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Intersociety conference on Energy Conversion Engineering (IECEC)

作者： C.D. Brandt R.H. Hopkins A.K. Agarwal J.B. Casady R.R. Siergiej S. Seshadri G. Augustine L.B. Rowland J.F. Perkins Northrop Grumman STC Pittsburgh PA USA

Because of their wide bandgap, high operating temperature (to 500/spl deg/C), high breakdown voltage (10X that of silicon) and other unique electronic properties, power switches and diodes based on silicon carbide (SiC) offer significant potential performance advantages compared to silicon-based devices in terms of reliability, higher immunity to thermal runaway, reduced switching losses, and higher current density. When combined with the high thermal conductivity of SiC (like copper), significant savings in system cooling requirements, weight and cost are likely for many aircraft, shipboard, vehicle and utility power conversion applications. Application for robust sensors and controls in more conventional systems are also visualized. Current research is aimed to turn such promise into the demonstrations required for initial product applications by addressing critical technical issues to realize operational discrete power devices. These include vertical MOSFETs, static induction transistors, gate tum-off thyristors (GTOs), MOS turn-off thyristors (MTOs) and companion diodes (Agarwal et al., 1996), (Palmour et al., 1996), (Shenoy et al., 1996). This presentation addresses the relative benefits of various power device structures, emphasizing how the special properties of SiC enhance the utility of specific devices compared to their Si-based counterparts. We have already demonstrated a 1100 V MOSFET, a 700 V GTO operating at 350/spl deg/C, and diodes with 1000 V breakdown and power densities of 1000 A/cm/sup 2/.

关键词： Silicon carbide Power electronics Diodes MOSFETs Thyristors Thermal conductivity photonic band gap Temperature Performance loss Power system reliability

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Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE

Double heterojunction bipolar transistors with InP epitaxial...

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Indium Phosphide and Related Materials conference

作者： J. Cowles R.A. Metzger A. Gutierrez-Aitken A.S. Brown D. Streit A. Oki T. Kim A. Doolittle Electronic Systems and Technology Division TRW Redondo Beach CA USA School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA

Epitaxial layers containing phosphorus (P) find numerous applications in electronic and photonic devices such as GaInP/GaAs HBTs, InAlAs/InGaAs/InP double HBTs, GaP LEDs and InP/InGaAsP MQW lasers operating at 1.3-1.55 /spl mu/m. These structures have been realized traditionally either by MOCVD, GSMBE or CBE relying on highly toxic hydrides as the gas sources for phosphorus and arsenic. Solid-source MBE provides the simplest and most elegant solution for growing complex epitaxial structures; however, the unique physical properties of solid phosphorus make it difficult to grow P-containing layers. By using a recently developed phosphorus valved cracker, excellent InP heterostructures have been achieved. We have explored the use of InP active layers in InP-based HBT grown entirely by solid-source MBE and compared them to InAlAs/InGaAs HBTs.

关键词： Double heterojunction bipolar transistors Indium phosphide Epitaxial layers Indium compounds Indium gallium arsenide Molecular beam epitaxial growth Gallium arsenide Light emitting diodes Quantum well devices Gas lasers

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