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检索条件"任意字段=Conference on Optical Design and Engineering IV"

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Quantum Well Infrared Photo-detector iv Characteristics 6

Quantum Well Infrared Photo-detector IV Characteristics

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6th conference on Frontiers in optical Imaging and Technology: Novel Detector Technologies

作者： Liu, Xiaolin Wang, Jiqiang Zhang, Yan Wang, Ling Li, Xiangyang Institute of Shanghai Technical Physics Chinese Academy of Sciences Shanghai200083 China

ISBN: (数字)9781510679696

ISBN: (纸本)9781510679689

This article mainly studies the current voltage (iv) characteristics of Quantum Well Infrared Photo-detectors, especially the influence of temperature on their performance, as well as the characteristics related to photocurrent and dark current. We measured the iv curves at different temperatures and conducted comparative studies to reveal the differences in the behavior of quantum well devices under photoexcitation and non photoexcitation conditions, in order to gain a deeper understanding of their performance characteristics. Finally, we investigated the response of quantum well devices to different blackbody temperatures and fitted the dark current using the iv curve, which was compared with the actual measured dark current. The results show that the fitted dark current is slightly larger than the actual measured dark current. Through these studies, we can comprehensively understand the iv characteristics of quantum well devices under different temperature and lighting conditions, providing strong support for their optimization and control in various applications. These research results are of great significance for the design and engineering applications of QWIP. © 2024 SPIE.

关键词： Dark currents

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optically-Pumped Lasing in GeSn Slab Waveguide on Silicon

Optically-Pumped Lasing in GeSn Slab Waveguide on Silicon

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2024 IEEE Silicon Photonics conference, SiPhotonics 2024

作者： Huang, Yin-Pu Wu, Bo-Rui Jheng, Yue-Tong Chang, Guo-En Chiayi County Taiwan Chiayi County Taiwan Department Of Mechnaical Engineering Chiayi County Taiwan

ISBN: (纸本)9798350394047

We present an optically-pumped GeSn slab waveguide laser directly integrated on silicon substrates. Our laser design uses a Si ridge structure on the GeSn active layer to support guiding modes and achieve excel optical confinement. Lasing action was achieved under optical pumping up to T=90 K with an emission wavelength of 2254 nm and a threshold of 170 kW/cm2 © 2024 IEEE.

关键词： optical pumping

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Varjo XR-3 vs HoloLens 2 for Maxillofacial Surgery: A Preliminary Comparative Assessment 4th

Varjo XR-3 vs HoloLens 2 for Maxillofacial Surgery: A Prelim...

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4th International conference of the Italian Association of design Methods and Tools for Industrial engineering

作者： Brunzini, Agnese Senesi, Paolo Mandolini, Marco Pagnoni, Mario Mazzoli, Alida Univ Politecn Marche Dept Ind Engn & Math Sci Via Brecce Bianche 12 I-60131 Ancona Italy YourFACE Clin Ars Biomed Via Luigi Bodio 58 I-00191 Rome Italy Univ Politecn Marche Dept Mat Environm Sci & Urban Planning Via Brecce Bianche12 I-60131 Ancona Italy

ISBN: (纸本)9783031765933;9783031765940

The primary procedures performed in maxillofacial surgery are osteotomy and repositioning. Surgeons usually exploit 3D printed guides and splints which entail considerable production time and high costs. To address these issues, innovative technologies such as mixed reality (MR) are emerging, but accuracy must still be assessed. Head-mounted displays (HMDs) are categorised into two main types: optical and video see-through. Recognisable comparisons between HoloLoens 2 (optical see-through) and Varjo XR3 (video see-through) are still not available in the scientific literature. This paper compares the accuracy of simulating maxillofacial surgery through these two different headsets. For the evaluation, a 3D model of a skull was 3D printed using Color Material Jetting 3D printing technology. Six people tested the MR application by i) tracing lines and holes with a pen following the holograms displayed on the phantom's anatomy for osteotomies, ii) moving the maxillary fragmented bone according to the projected hologram for repositioning. Times were recorded during the trial. The tested geometries were then 3D scanned to reconstruct the traced cutting lines and holes, and quantitative results were extracted in CloudCompare by comparing the drawn and nominal lines. For the repositioning, deviations have been computed to calculate the mean deviation from the planned displacement. The accuracy of the two HMDs resulted similar for the osteotomy, while Varjo XR3 proved to be preferable for the repositioning.

关键词： Mixed Reality Healthcare design Maxillofacial Surgery Video See-Through optical See-Through

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NASA SAGE SBIR structural, thermal, optical performance (STOP) analysis correlation to wavefront error testing 10

NASA SAGE SBIR structural, thermal, optical performance (STO...

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conference on Photonic Instrumentation engineering X

作者： Buleri, Christine Yow, Cameryn Carey, Janak Damadeo, Robert Halterman, Alexander Hill, Charles Leckey, John Maccarrone, Alicia Weiner, Samantha Yacoby, Shimshone Quartus Engn 9689 Towne Ctr Dr San Diego CA 92121 USA NASA Langley Res Ctr 1 Nasa Dr Hampton VA 23666 USA

ISBN: (纸本)9781510659612;9781510659629

In conjunction with the NASA LaRC SAGE iv Pathfinder team, Quartus has developed a small format near-diffraction limited telescope designed to package into a 6U CubeSat. The SAGE iv Pathfinder telescope utilizes analytical models and designs that can be leveraged to meet a broad range of scientific optical mission needs by creating a family of semi-custom small format space-borne optical systems. During the initial phases of a science mission, a systems engineering assessment can be performed to identify existing designs and analysis tools that can be leveraged to meet many key requirements. This would allow limited resources to then be focused on developing required new components, as opposed to designing the entire optical system from the bottom up. This accelerates technical readiness level (TRL) progression on semi-custom small format precision optical systems, reducing instrument costs, and achieving economy of scale typically not available on one-off science payloads. The current SAGE SBIR Phase II is a research program utilizing a SAGE-like design for development of STOP analysis correlation methodologies. Wavefront error (WFE) is captured over a variety of temperature ranges for comparison to finite element model (FEM) predictions. The accuracy and repeatability of the WFE measurement process over temperature is reviewed. Best practices for accurate STOP analysis and WFE predictions are summarized including modeling parameters, material properties, and strength and distortion assessments.

关键词： SAGE iv SBIR STOP FEM FEA Correlation WFE Thermal Testing Nastran Zemax SigFit

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Novel Group iv Material Based Waveguide Photodetector for Possible Sensing Applications 1

Novel Group IV Material Based Waveguide Photodetector for Po...

引用

1st IEEE International conference on Smart Power Control and Renewable Energy, ICSPCRE 2024

作者： Rout, Satyajeet Gahlawat, Devansh Agarwal, Manu Basu, Rikmantra National Institute Of Technology Delhi Department Of Electronics And Communication Engineering New Delhi India

ISBN: (纸本)9798350377002

This paper presents the design and simulation of GeSn lateral p-i-n waveguide photodetectors tailored for mid-infrared (mid-IR) integrated photonics applications. The mid-IR spectral range is of significant interest for various fields including environmental sensing, medical diagnostics, and telecommunications. Traditional semiconductor materials face limitations in this regime, prompting exploration into alternative materials such as germanium-tin (GeSn) alloy, known for its tunable bandgap and compatibility with silicon technology. Leveraging the p-i-n junction structure, our proposed photodetector design achieves efficient optical confinement within the GeSn active region. Through comprehensive simulation studies, including finite element method (FEM) and finite difference time domain (FDTD) simulations, we optimize device parameters to enhance light absorption and carrier collection efficiency. The lateral p-i-n photodetector architecture offers advantages such as reduced optical losses and compatibility with standard silicon fabrication processes. Our research contributes to advancing mid-IR integrated photonics by providing insights into the design and optimization of GeSn-based photodetectors. The proposed devices exhibit promising characteristics including high responsivity, low dark current, and fast response time, positioning them as key components for future mid-IR photonic integrated circuits (PICs) for applications such as spectroscopy, chemical sensing, and telecommunications. © 2024 IEEE.

关键词： Tin alloys

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Paradigm Shift in optical Payload Development: Rapid TRL Increase for CubeSat optical Payloads

Paradigm Shift in Optical Payload Development: Rapid TRL Inc...

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Accelerating Space Commerce, Exploration, and New Discovery conference, ASCEND 2023

作者： Maccarrone, Alicia Yow, Cameryn Carey, Janak Halterman, Alexander Cheff Weiner, Samantha Yacoby, Shimshone Johnson, Adam Damadeo, Robert Hill, Charles Quartus Engineering 9689 Towne Centre Drive San DiegoCA92121 United States NASA Langley Research Center 1 Nasa Drive HamptonVA23666 United States

ISBN: (数字)9781624107054

ISBN: (纸本)9781624107054

Quartus engineering Incorporated (Quartus) has been working with NASA LaRC to develop an approach to accelerate the development of spaceborne custom precision optical payloads, leveraging analytical models and existing opto-mechanical designs to provide a shift in the development of space-based optical systems for deployment on CubeSats and small satellite platforms. With this approach, science missions can focus budgets and staff on the instrumentation they need to complete their specific objectives and spend less time and money on the development of one-off designs. This approach could lead to rapid TRL progression for science missions that utilize validated components or subassemblies, saving significant cost and schedule by reducing or eliminating the needs for ground unit testing and validation, thus significantly reducing time to mature a program’s TRL from 2 to 6. Using the SAGE iv Pathfinder telescope as the subject, the SBIR Phase I focused on analysis correlation at the component level, while the SBIR Phase II focused on analysis correlation at the system level. The Phase II system level design used a 3-mirror telescope derived from the LaRC SAGE iv instrument design. The accuracy and repeatability of the Wavefront error (WFE) measurement process over temperature was reviewed. The Phase II-E work builds upon the component level and system level testing to date by further developing the structural analysis validation with gathered material test data and random vibration testing for launch loads. Material test data, along with pre-test FEM results are reviewed. The Phase II-E effort is scheduled to conclude in November 2023. The testing done under this SBIR continues to push a paradigm shift in telescope and optical system development. As the 2017 decadal survey [1] pointed out, it is important for the science community to find ways to make limited resources go further. With validation of these test and analysis tools, the science community can begin to expl

关键词： optical systems

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FPGA-based Single-target Motion Detection design 3

FPGA-based Single-target Motion Detection Design

引用

3rd International conference on Signal Image Processing and Communication, ICSIPC 2023

作者： Yin, Huansong Sun, Bingyu School of Electronic and Information Engineering Anhui Jianzhu University Anhui Hefei230601 China University of Science and Technology of China Hefei230026 China

ISBN: (纸本)9781510670945

For research at home and abroad, and to ensure the accuracy and real-time of the acquired images, to achieve the function of moving target detection, a digital image processing application based on FPGA - moving object detection is proposed, and the image acquisition and image processing two parts are studied, the image acquisition is OMINivISION OV5640 image sensor, which comes with an embedded microprocessor to support image scaling and translation. By the programmable device FPGA to receive and send data to the FPGA external large-capacity SDRAM memory for storage, image processing is selected Intel Cyclone iv series FPGA chip, for the image acquisition process of a variety of random noise, through the verilog HDL hardware description language written RTL register transmission level code, to achieve image acquisition and storage, average filtering, expansion algorithm, corrosion algorithm, morphological operation closed calculation design The processed image is used for moving target detection and VGA display display. The system is mainly composed of camera acquisition module, SDRAM controller module, display driver module, image processing module, through design simulation, the results show that the system realizes real-time acquisition and processing of digital images, reaching 640*480 resolution display of 30 frames per second. © 2023 SPIE.

关键词： Image acquisition

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Exploration of Electronic Structure and optical Properties Hafnium (iv) Oxide and Its 12% Si, Ge and Sn with Material Data Analysis by Computational Methods 4th

Exploration of Electronic Structure and Optical Properties H...

引用

International conference on 4th Industrial Revolution and Beyond, IC4IR 2021

作者： Chakma, Unesco Kumer, Ajoy Hossain, Tomal Sayed Hossain, Md. Monsur Alam, Md. Khandakar, Nusrat Jahan Shariful Islam, Md. Shaikh, Rubel Hazrat Ali, Md. Department of Electrical and Electronics Engineering European University of Bangladesh Gabtoli Dhaka1216 Bangladesh Laboratory of Computational Research for Drug Design and Material Science Department of Chemistry European University of Bangladesh Gabtoli Dhaka1216 Bangladesh Department of Chemistry Bangladesh University of Engineering Technology Dhaka1000 Bangladesh Center for Research Reactor Bangladesh Atomic Energy Commission Dhaka Bangladesh Department of Civil Engineering European University of Bangladesh Gabtoli Dhaka1216 Bangladesh European University of Bangladesh Gabtoli Dhaka1216 Bangladesh

ISBN: (纸本)9789811980312

This research work conveys the computational analysis of hafnium (iv) oxide and its doped crystal by Si, Ge and Sn replacing on the oxygen atom in HfO2, as hafnium (iv) oxide has been used in power-electronics devices of MOSFETs and electronics as RRAM due to wide band gap which makes a vast problems creating high resistances. Regarding this case, the hafnium (iv) oxide has selected inputs how the band gap has decreased later than doping by the large surface area atoms, such as Si, Ge and Sn. The first principle method in view of density functional theory (DFT) expresses the structural geometry, electronic structure and optical properties utilizing conformist calculations pertaining to HfO2 executing the computational avenue of the CASTAP regulation from material studio 8.0. The band gap was found in 4.340 eV, 2.033 eV, 1.686 eV and 3.210 eV for HfO2, Hf0.88Si0.12O2 Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 crystals through the Generalized Gradient Approximation (GGA) with Perdew Burke Ernzerhof (PBE), and the DFT and PDOS were simulated for evaluating the nature of 6s2, 5p6, 4f14, 5d2 orbital for a Hf atom, 3s2, 2p6 orbital for Si atom, 4s2,3p6, 3d10 orbital for Ge atom, 4d10, 5s2, 5p2 for Sn atom, 2s and 2p orbital for O atom of Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 crystals. The optical properties, for instance, absorption, reflection, refractive index, conductivity, dielectric function and loss function, were calculated. © 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Energy gap

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Group iv Mid-Infrared Photonic Devices and Applications 23

Group IV Mid-Infrared Photonic Devices and Applications

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23rd International conference on Transparent optical Networks, ICTON 2023

作者： Rowe, David J. Reid, Lauren Wei, Chen Stirling, Callum J. Mitchell, Colin J. Du, Han Yan, Xingzhao Tran, Dehn T. Wu, Yangbo Banakar, Mehdi Qi, Yanli Osman, Ahmed Li, Ke Penades, Jordi Soler Zhou, Longqi Groom, Kristian M. Heffernan, Jon Littlejohns, Callum G. Nedeljkovic, Milos Mashanovich, Goran Z. University of Southampton Optoelectronics Research Centre SouthamptonSO17 1BJ United Kingdom Electronic and Electrical Engineering University of Sheffield SheffieldS10 2TN United Kingdom

ISBN: (纸本)9798350303032

We present our recent results on mid-infrared photonic devices, including component optimisation, circuit design and their application to sensing. We show the performance of an on-chip FTIR microspectrometer implemented in silicon-on-insulator. A self-referenced switching sensor improves noise rejection by a factor of 11 compared to a regular waveguide sensor. We demonstrate waveguides with single-moded guidance over an octave of frequency at mid-infrared wavelengths to enable on-chip spectroscopy by suppressing higher-order modes. We apply a noise model to evaluate the performance of our waveguide sensors for therapeutic drug monitoring. Flip-chip bonding has been used to integrate quantum cascade lasers onto a GoS platform and we report further advances in coupling efficiency, structural integrity, process design and real-time laser monitoring. Finally, we discuss recent progress on detectors, included bolometers and defect-mediated methods. © 2023 IEEE.

关键词： Bolometers

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Electric field mapping of wide-bandgap semiconductor devices at a submicrometer resolution 18

Electric field mapping of wide-bandgap semiconductor devices...

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conference on Gallium Nitride Materials and Devices XVIII

作者： Cao, Yuke Pomeroy, James W. Wang, Jingshan Fay, Patrick Shankar, Bhawani Chowdhury, Srabanti Kuball, Martin Univ Bristol Ctr Device Thermog & Reliabil Tyndall Ave Bristol BS8 1TL Avon England Univ Notre Dame Dept Elect Engn Notre Dame IN 46556 USA Stanford Univ Dept Elect Engn Stanford CA 94305 USA

ISBN: (纸本)9781510659476;9781510659483

Semiconductor device developments are typically guided by simulations - what is the best epitaxial design, or how should field plates or edge terminations be designed. To assess how a particular device reflects what has been designed, comparing iv curves measured and simulated is typical, but for example different implantation or doping levels can lead to the same too low breakdown voltage, and there is then little guidance for example how to mitigate such a problem to optimize/enhance breakdown voltage. We illustrate the latest capability of a technique we developed, based on electricfield-induced optical second-harmonic generation (EFISHG), on vertical GaN-on-GaN pn junction examples, to directly access with submicron spatial resolution electric strength in a device, to aid improving device design and their implementation, and reducing product development cycles.

关键词： Device simulation wide bandgap semiconductors electric fields device design reliability

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