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2024 International conference on optoelectronic Materials and devices, ICOMD 2024

作者： Ma, Yaling Zhang, Song Liu, Qun Wang, Dejin Zhou, Yaohui Li, Mincheng Process Integration Technology R&D Center China Resources Shanghua Technology Co. Ltd. Wuxi China

ISBN: (数字)9781510689046

ISBN: (纸本)9781510689039

The development of integrated circuits towards high performance and high integration is an inevitable trend, and the reliability issues brought about by this trend have become increasingly prominent as the electric field intensity and current density increase. With the continuous reduction in the characteristic size of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), new mechanisms of Hot Carrier Injection (HCI) have emerged, seriously affecting the service life of the devices. This paper investigates the impact of HCI degradation on device lifetime by altering the CESL (Contact Etch Stop Layer) film in the device. By comparing the reliability assessment results of devices with SiON and SiN as the CESL films, it is confirmed that using SiON as the CESL film can enhance the device's lifespan. Both Pure 5v CMOS and LDMOS can pass process reliability assessments and meet industry standards. © 2025 SPIE.

关键词： MOS devices

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Hybrid integration of III-v optoelectronic devices on Si platform using BCB

Hybrid integration of III-V optoelectronic devices on Si pla...

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conference on Photonics Packaging and integration III

作者： Katsnelson, A Tokranov, v Yakimov, M Lamberti, M Oktyabrsky, S SUNY Albany Sch NanoSci & NanoEngn Albany NY 12203 USA

ISBN: (纸本)0819447978

Inadequate performance of interconnects in emerging integrated circuitry has generated a need for alternative signal transmission solutions. integration of dense arrays of high frequency III-v photoemitters and photodetectors with Si platform is one of the challenging tasks. Comparison of monolithic and hybrid integration technologies highlights the advantages of hybrid approaches at least for emitters highly sensitive to growth defects. A novel protocol for fabrication of III-v optoelectronic components such as LEDs, vCSELs and photodetectors on Si platform is proposed. The simulations of thermal behavior and mechanical stresses of this integration scheme was performed using finite element analysis and revealed adequate heat dissipation. Simulations show that this protocol allows to reduce overheating and mechanical stresses to enhance the optoelectronic devices performance and increase their lifetime. The III-v structures are grown homoepitaxialy on GaAs substrate, then bonded to a Si wafer using low-temperature polymer followed by wet etching of the substrate. The scheme involves vCSEL processing with coplanar metallization on Si with PMGI reflow planarization. MBE-grown reversed vCSEL structure was used for manufacturing of the test devices using this novel protocol. An AlAs etch stop layer was imbedded into the structure. 10 mum thick vCSEL structure was bonded on Si using BCB (Cyclotene(TM)). Substrate was completely removed by selective etching to reduce thermal stresses to enhance the optoelectronic devices performance and increase their lifetime. The array of the 3D devices was fabricated using wet etching. A 10 pm-thick high frequency vCSEL with coplanar metallization is processed on Si with PMGI reflow planarization. Electro-luminescence spectrum, IN and PT characteristics were measured and compared with a reference structure. It was found that measured thermal impedance is about five times higher than for devices on a host GaAs wafer. Simulation of therm

关键词： hybride integration GaAs on Si polymer bonding optoelectronic devices

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Heterogeneous integration of III-v optoelectronic devices on silicon

Heterogeneous integration of III-V optoelectronic devices on...

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20th International conference on Indium Phosphide and Related Materials

作者： van Thourhout, Dries Roelkens, Gunther Brouckaert, Joost Komorowska, Katarzyna Liu, Liu Baets, Roel Notzel, Richard Univ Ghent IMEC Dept Informat Technol B-9000 Ghent Belgium Eindhoven Univ Technol Photon & Semicond Nanophys Eindhoven Netherlands

ISBN: (纸本)9781424422586

Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular tight generation directly from silicon remains difficult Therefore we developed a die-to-wafer bonding based approach for integrating HI-v materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.

关键词： Silicon nanophotonics heterogeneous integration lasers detectors

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Frontiers of monolithic integration of semiconductor III-v optoelectronic devices with silicon technology

Frontiers of monolithic integration of semiconductor III-V o...

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Extended Abstracts of the 1992 International conference on Solid State devices and Materials - SSDM '92

作者： Razeghi, M. Sudharsanan, R. Fan, J.C.C. Northwestern Univ Evanston United States

n this paper, we review the advances made in the area of monolithic integration of III-v technology with Si technology. The major issue of heteroepitaxy of III-v films on Si substrates has advanced considerably, that many III-v devices have been fabricated on Si substrates and comparable performance was obtained on these devices. Though, many minority carrier devices on Si have been demonstrated but still, their performance is limited by dislocations. Recent demonstration of a monolithic GaAs based OEIC offers great promise for further research in this area.

关键词： Semiconducting silicon

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III-v monolithic integration for optoelectronic devices and new developments on 2D materials 18

III-V monolithic integration for optoelectronic devices and ...

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18th IEEE Nanotechnology Materials and devices conference, NMDC 2023

作者： Baron, T. Letka, v. Hijazi, H. Mehdi, H. Dida, L. Mallet Hauchecorne, P. Martin, M. Massara, N. Gaillard, P. Dafonseca, Jeremy Moeyaert, J. Loup, v. Mignot, J. Bassani, F. Salem, B. Tang, M. Chen, S. Liu, H. Jany, C. Univ. Grenoble Alpes Cnrs CEA/LETI-Minatec Grenoble Inp Ltm GrenobleF-38054 France Univ. Grenoble Alpes Cea Leti Grenoble38000 France University College London Torrington Place LondonWC1E 7JE United Kingdom

ISBN: (纸本)9798350335460

The last twenty years have shown an impressive increase of the number of connected objects. Grouped under the generic term of Internet of Things (IoT), those connected devices are based on data acquisition, analysis, transfer and storage. In today's fast-paced industry, the demand for more intelligent, efficient, and secure electronic devices is growing steadily. Electronic chips that can support advanced functionalities such as artificial intelligence, machine learning, and data analytics are crucial to meeting these demands. All those developed devices consume an important amount of energy and raw materials. © 2023 IEEE.

关键词： Data Analytics

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Heterogeneous III-v/Si Photonic integration: Configuration and Optical Coupling 15

Heterogeneous III-V/Si Photonic Integration: Configuration a...

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15th International conference on Numerical Simulation of optoelectronic devices (NUSOD)

作者： Wang, Qian Pu, Jing Ng, Doris Lee, Cheewei Krishnamurthy, vivek Loh, Terhoe Lim, Kimpeng Ren, Min Agcy Sci Technol & Res Data Storage Inst Singapore Singapore

This paper presents the overview of heterogeneous III-v/Si photonic integration configuration as a platform technology. The efficient adiabatic optical coupling between the active III-v/Si ridge waveguide and thin sil... 详细信息

ISBN: (纸本)9781479983797

关键词： Terms-photonic integration optical coupling heterogeneous III-v/Si

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optoelectronic integration using aligned metal-to-semiconductor bonding

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JOURNAL OF vACUUM SCIENCE & TECHNOLOGY A-vACUUM SURFACES AND FILMS 2002年第3期20卷 1052-1056页

作者： Giziewicz, WP Fonstad, CG MIT Dept Comp Sci & Elect Engn Cambridge MA 02139 USA MIT Microsyst Technol Lab Cambridge MA 02139 USA

A method to monolithically integrate optoelectronic devices with separately fabricated very large scale integrated circuitry has been investigated, and an aligned bonding procedure involving an intermediary metal film has been developed. The optoelectronic device heterostructures are grown epitaxially and patterned on the growth substrate, and then aligned to and bonded into dielectric wells on the target integrated circuit (IC) substrate, an entire wafer at a time. The metal film structure is responsible for the mechanical attachment of the devices to the integrated circuit substrate as well as for the ohmic contact between the parts. Bonding is performed at a low enough temperature to prevent damage to the electronics on the target substrate. Finally, the growth substrate is removed and the heterostructures are processed into optoelectronic devices integrated monolithically with the electronics, leaving a relatively planar optoelectronic integrated circuit. Results will be presented from initial experiments of bonding patterned devices to simple gallium arsenide (GaAs) substrates, and more importantly from recent experiments of bonding devices onto GaAs IC chips from the OPTOCHIP project. The procedure can also be used to integrate III-v devices onto silicon substrates. (C) 2002 American vacuum Society.

关键词： Integrated optoelectronics

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Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

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IEE PROCEEDINGS-optoelectronicS 2000年第1期147卷 2-6页

作者： Chen, HD Liang, K Zeng, QM Li, XJ Chen, ZB Du, Y Wu, RH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China Hebei Semicond Res Inst Shijiazhuang 050051 Peoples R China

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

关键词： aluminium compounds flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels semiconductor quantum wells III-v semiconductors transimpedance receiver-transmitter circuit input light detectors Electro-optical devices Integrated optoelectronics packaging GaAs/AlGaAs MQW devices gallium arsenide CMOS integrated circuits output light modulators integrated optoelectronics SEEDs Optical properties of II-vI and III-v semiconductors (thin films/low-dimensional structures) Optical bistability, multistability and switching Semiconductor superlattices, quantum wells and related structures GaAs/AlGaAs multiple quantum well self electro-optic effect device reflection spectrum hybrid integration good optoelectronic characteristics GaAs-AlGaAs MQW SEED arrays electro-optical modulation optoelectronics manufacturing Optical beam modulators Product packaging flip-chip devices silicon CMOS circuits flip-chip bonding Packaging smart pixels GaAs-AlGaAs

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2009 International conference on Optical Instruments and Technology - optoelectronic devices and integration

2009 International Conference on Optical Instruments and Tec...

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2009 International conference on Optical Instruments and Technology, OIT'09

ISBN: (纸本)9780819478955

The proceedings contain 45 papers. The topics discussed include: new encoder-decoder scheme of OCDMA with electro-optic crystal;a novel local dimming algorithm for RGB-LED backlight;study on far-field image using microlens array integrated with LCD;slanted multimode fiber gratings and applications;optimization for grating length of 980nm single-mode semiconductor laser with dual fiber Bragg grating;resonant wavelength and wavelength separation tunable dual-channel fiber Bragg grating based on filling functional material into highly birefringent photonic crystal fiber;electro-optically tunable multiple channel reconfigurable OADM with Ti: LiNbO3 waveguides;influence of the concentration of O vacancy on electronic structure and conduction properties of v-doped anatase TiO2;blue spectral shift of P3HT organic film by KrF excimer laser ablation;and analysis of transmission spectral characteristics of the photonic crystal fiber grating.

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Numerical Analysis on v-shape Gratings for III-v/Silicon Hybrid Lasers 15

Numerical Analysis on V-shape Gratings for III-V/Silicon Hyb...

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15th International conference on Numerical Simulation of optoelectronic devices (NUSOD)

作者： Huang, Jen-Hung Chen, Bai-Ci Wu, Yu-Chang Lin, Chien-Chung Natl Chiao Tung Univ Inst Imaging & Biomed Photon 301 Gaofa 3rd Rd Tainan Taiwan Natl Chiao Tung Univ Inst Photon Syst Coll Photon Tainan Taiwan

ISBN: (纸本)9781479983797

We propose and numerically analyze a novel sub-wavelength grating for the purpose of III-v/silicon integration. The design is based on different shapes of gratings in order to increase the lateral (or sideway) coupling. By using COMSOL (R) as the platform, the reverse v-grating design can have doubled percentage of optical field into the silicon grating region when compared to reference. However, the threshold gain of this design is still high and further optimization is needed.

关键词： Gratings Grates Numerical Analysis threshold gain Light fields Laser Lateral Comsol digitally

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