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检索条件"任意字段=Conference on Ph.D Research in Microelectronics and Electronics"

共 836 条记录，以下是91-100 订阅

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A 4T GC-edRAM Bitcell with differential Readout Mechanism For High Performance Applications

A 4T GC-eDRAM Bitcell with Differential Readout Mechanism Fo...

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ph.d. research in microelectronics and electronics (PRIME)

作者： Roman Golman Avinoam Segev Adam Teman EnICS Labs Faculty of Engineering Bar Ban University Ramat Gan Israel

ISBN: (数字)9798350386301

ISBN: (纸本)9798350386318

Gain-cell embedded dRAM (GC-edRAM) is a dense, low power option for embedded memory implementation, supporting low supply voltages. However, due to its structure, the readout scheme is slow and requires a high precision external reference voltage to improve performance. In this work, we propose a novel bitcell featuring a differential readout mechanism for high frequency operation without the need for an external voltage supply. A 16 kbit memory macro was implemented in 65nm CMOS bulk technology offering up to 3x improvement in access time compared to standard GC-edRAM solutions and similar read time to SRAM bitcells, while providing up-to 30% reduction in bitcell area compared to standard SRAM solution.

关键词： Power demand Random access memory CMOS technology discharges (electric) Topology Sensors microelectronics

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A 880 nW, 100 kS/s, 13 bit differential Relaxation-dAC in 180 nm

A 880 nW, 100 kS/s, 13 bit Differential Relaxation-DAC in 18...

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ph.d. research in microelectronics and electronics (PRIME)

作者： Roberto Rubino Francesco Musolino Yong Chen Anna Richelli Paolo Crovetti Dept. Electronics and Telecommunication (DET) Politecnico di Torino Torino Italy State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST University of Macau Macao China Dept. of Information Engineering University of Brescia Brescia Italy

This paper presents a digital intensive, compact and energy efficient 13-bit, 100-kS/s differential Relaxation digital to Analog converter (diff-RedAC) in 180 nm CMOS. The diffRedAC is able to operate in a supply voltage range from 0.45 V to 1 V having power consumption ranging from 420 nW to 2,650 nW. It has an area footprint of only 7,800$\mu \mathrm{m}^{2}$ while achieving, at 0. 6V a maximum INL (dNL) of 1. 07LSB(0.96LSB), 77. 81dB(77.52dB) of SFdR (THd) and 65. 82dB SINAd, resulting in 10. 64ENOB. Its low power dissipation of 880nW results in extremely competitive energy efficiency (area-normalzed energy efficiency) figures of merits FOM (FO$\mathrm{M}_{\mathrm{A}}$) of 172 dB(178dB).

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Time-Based Buck Converter with Variable Frequency dCM and ON-Time Correction for Seamless Transitions

Time-Based Buck Converter with Variable Frequency DCM and ON...

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ph.d. research in microelectronics and electronics (PRIME)

作者： Paolo Melillo Simone Zaffin Alessandro Gasparini Salvatore Levantino Massimo Ghioni DEIB Politecnico di Milano Milan Italy R&D STMicroelectronics Milan Italy

A time-based compensator represents an effective solution to overcome the limitations of the traditional voltage mode controllers, as it allows to reduce both the die area occupation and the quiescent power consumption without compromising the control loop performances. Buck converters driven by high switching frequencies suffer from relatively low efficiency in medium/light load conditions, given the large power losses associated to the switching activity. Usually, to overcome this limitation the converter is operated in pulse frequency modulation (PFM), which makes it necessary to design an additional control loop and adds a dC offset to the output voltage as well. This paper proposes a variable switching frequency time-based control, able to operate the converter both in continuous and discontinuous current mode to guarantee high efficiency for a wide load current range. In addition, seamless frequency transition are obtained with a dedicated on-time correction circuit, which keeps the average inductor current constant upon variations of the operating regime. The proposed method boosts the efficiency in medium-light load conditions, ensuring an overall efficiency above 85% over a wide load current range. The effectiveness of this technique is supported by theoretical analysis and simulation results.

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Oscillator Based Bio-Sensor for Skin Sweating detection: A Feasibility Survey

Oscillator Based Bio-Sensor for Skin Sweating Detection: A F...

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ph.d. research in microelectronics and electronics (PRIME)

作者： Naveen Srinivassane Aïcha Saïd Frédéric Hameau Rémy Vauché Florence Podevin Sylvain Bourdel Univ. Grenoble Alpes CEA leti Grenoble France Univ. Aix Marseille IM2NP Marseille France Univ. Grenoble Alpes Grenoble INP TIMA Grenoble France

This paper is a feasibility survey of the design of an oscillator-based bio-sensor for skin physiological parameter detection. The sensor aims to detect stress through skin sweating measurement. The proposed architecture uses an oscillator coupled to an on-skin resonator. The oscillator is based on a cross coupled pair (CCP) which is directly connected to the resonator. The on-skin resonator has been designed to have an oscillation frequency sensitive to the sweat. Oscillator outputs are driven by two buffers that act as 50 $\Omega$ impedance matching. Two test benches, one with a dry skin and one with a wet skin, have been used for the study. The oscillation frequency of this oscillator is equal to 27.876 GHz for the dry skin, and 27.911 GHz for the wet one. The difference between the two oscillation frequencies, which is equal to 35 MHz, can be easily distinguished which validates the feasibility survey. The survey provides the sizing of each block and the simulated results in 55 nm BiCMOS technology.

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A Fast-Response Reference Current Source for High- and Low-Side High-Voltage Current Mirrors for Gate-Shaping digital Gate drivers

A Fast-Response Reference Current Source for High- and Low-S...

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ph.d. research in microelectronics and electronics (PRIME)

作者： Tobias Zekorn Erik Wehr Kenny Vohl Ralf Wunderlich Stefan Heinen Integrated Analog Circuits and RF Systems Laboratory RWTH Aachen University Kopernikusstr. 16 D-52074 Aachen Germany

This paper presents the design of a fast-response reference current $(I_{FRR})$ source being the reference for the high-voltage output current sources of a gate shaping digital gate driver for Silicon-Carbide power MOSFETs. By shaping the switching waveform driving the power MOSFET, there are significant improvements regarding energy efficiency and electromagnetic compatibility obtainable. The maximum reference current for the output current mirrors of the gate driver is 44.7mA with a total output current of 5.6A. A maximum startup time of less than 50ns over process and mismatch variations and the full temperature range of $-40mA^{\circ}{C}$ to from $150^{\circ}C$ is achieved. The total current consumption is {4.12mA from 5V with a reference current of 44.7mA from 20V while operating. The turn-off current consumption is 0 mA from 20 V and the standby current consumption is 9.27mA respectively.

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An Auto-Zero Comparator for Monolithic GaN Power Integration

An Auto-Zero Comparator for Monolithic GaN Power Integration

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ph.d. research in microelectronics and electronics (PRIME)

作者： Jan Grobe Jonas Zoche Ralf Wunderlich Stefan Heinen Integrated Analog Circuits and RF Systems RWTH Aachen University Aachen Germany

ISBN: (数字)9798350386301

ISBN: (纸本)9798350386318

Comparators are vital building blocks for integrated power electronics. Monolithic integration of switches and drivers in high-voltage GaN processes have shown significant performance benefits, while analog circuits still fall behind due to offset and noise. An auto-zero comparator design optimized for propagation delay, noise and offset voltage is proposed. It employs multiple AC-coupled gain stages, which are zeroed sequentially to reduce input referred offset and low-frequency noise. Simulations of the proposed comparator are performed using noise and mismatch models extracted from a physical reference design and manufactured test structures. The proposed design achieves 81 dB of gain with 9.3 ns propagation delay. Monte Carlo and noise simulations yield a 1-σ offset of 1.2 m V and 18.2 µV rms integral input noise.

关键词： Voltage measurement Monte Carlo methods Noise High-voltage techniques Switches Power electronics Power conversion

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Extension of Quasi-Load Insensitive Class-E doherty Operation with Complex Load Trajectories

Extension of Quasi-Load Insensitive Class-E Doherty Operatio...

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ph.d. research in microelectronics and electronics (PRIME)

作者： Mehdi Otmani Ayssar Serhan Jean-daniel Arnould Estelle Lauga-Larroze Alexandre Giry CEA LETI Grenoble France Univ. Grenoble Alpes CNRS Grenoble INP Grenoble France

ISBN: (数字)9798350386301

ISBN: (纸本)9798350386318

This paper extends the quasi-load insensitive (QLI) Class-E doherty power amplifier (PA) design methodology to address doherty PA combiners with complex load impedance trajectories. The analysis of the Class-E PA power and efficiency load-pull contours shows that changing the class-E network resonance factor allows rotating the loadpull contours to achieve QLI operation with various doherty combiners. Moreover, an alternative approach using a modified class-E network is proposed to overcome the frequency limitation that might be caused by the class-E network resonance factor choice. To validate the proposed methodology, a 40 W doherty PA is designed and simulated using commercial GaN HEMT transistors achieving more than 70% Efficiency over 6-dB output power back-off at 3.8 GHz.

关键词： design methodology Power amplifiers Resonant frequency HEMTs Resonance Trajectory microelectronics

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Time Resolution Simulations of Monolithic CMOS Sensors with Internal Gain

Time Resolution Simulations of Monolithic CMOS Sensors with ...

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ph.d. research in microelectronics and electronics (PRIME)

作者： Umberto Follo Dep. of Electronics and Telecommunications Politecnico di Torino Torino Italy

ISBN: (数字)9798350386301

ISBN: (纸本)9798350386318

Low Gain Avalanche detectors represent one of the most mature technologies of solid-state detection for time measurements in particle physics experiments. However, due to their hybrid approach and their non-commercial grade process, the production and assembly costs are considerable. A possible solution is to develop monolithic CMOS sensors designed for timing applications which has been one of the goals of the 3rd run of the ARCAdIA project. Indeed, a first prototype of monolithic CMOS sensor in 110nm with internal gain has been developed with the support of simulations to predict the performance of the designed system. A Monte Carlo software, Garfield++, has been employed to generate realistic signals coming out from the sensor while a Computer Aided design software has been used to simulate the electronics response. The total time resolution extracted from the simulations is around 100ps rms.

关键词： Semiconductor device modeling Monte Carlo methods design automation Computational modeling Prototypes Production Software

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Improvements Through Forward Power Transfer in an Isolated Flyback Boost Converter for Solar Applications

Improvements Through Forward Power Transfer in an Isolated F...

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ph.d. research in microelectronics and electronics (PRIME)

作者： Juan Cruz-Cozar Alfredo Medina-Garcia Jorge Perez-Martinez Cristina Martos-Contreras Noel Rodriguez diego P. Morales R&D Funding Infineon Technologies AG Munich Germany Power System Engineering Infineon Technologies AG Munich Germany Electronics and Computer Technology University of Granada Granada Spain

ISBN: (数字)9798350386301

ISBN: (纸本)9798350386318

The concept of distributed renewable energy systems brings with it the need for further research in power electronics. The use of local solar energy, with technologies such as microinverters and micro-optimizers, implies the need to raise voltages to adapt them to a distribution bus from which the rest of the elements operate. In this work, the resonant behavior of a forward-flyback boost is studied, which allows to obtain a higher energy density than in a conventional flyback. For this purpose, an exhaustive comparison is made in terms of energy between both proposals, showing how the addition of a forward behavior improves the performance. In addition to the theoretical comparison, a converter is made to operate under the same conditions transferring only energy in flyback mode as well as in forward-flyback mode. This demonstrates how higher power density can be obtained thanks to forward transfer through capacitors, devices with better energy density.

关键词： Renewable energy sources Inductance Power system measurements Capacitors Prototypes Solar energy Transformers

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Analysis of Non-Ideal Series-Series Compensated Inductive Wireless Power Transfer Link Under Sub-Resonant Frequency Control

Analysis of Non-Ideal Series-Series Compensated Inductive Wi...

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ph.d. research in microelectronics and electronics (PRIME)

作者： A. Vulfovich A. Kuperman Applied Energy Center Ben-Gurion University of the Negev School of Electrical and Computer Engineering Be'er Sheva Israel

ISBN: (数字)9798350386301

ISBN: (纸本)9798350386318

Following the rise in wireless power transfer (WPT) applications, sub-resonant frequency control (SFC) has proven to be an effective solution in cases where constant output current mode (COCM) operation of inductive WPT link (IWPTL) is required. This paper outlines analysis of a non-ideal series-series (SS) compensated IWPTL under SFC, considering the voltage drops across and equivalent series resistance (ESR) of practical components. The resulting equations are then compared with those of an ideal system which have been revealed in previous works, demonstrating an error reduction of up to 83.3% for an example system simulated in PSIM software. The results showcase improved precision of the newly presented approach by demonstrating higher correlation with practical values than previously achieved which may be of great importance in high precision applications.

关键词： Resistance Wireless communication Correlation Wireless power transfer Mathematical models Software microelectronics

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