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检索条件"任意字段=Conference on Ph.D Research in Microelectronics and Electronics"

共 836 条记录，以下是221-230 订阅

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RSSI Overboard Localization System for Safe Evacuation of Large Passengers Ships 13

RSSI Overboard Localization System for Safe Evacuation of La...

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13th conference on ph.d. research in microelectronics and electronics (PRIME) / 14th International conference on Synthesis, Modeling, Analysis and Simulation Methods and Application to Circuit design (SMACd)

作者： El Agroudy, Naglaa Georgiades, George Joram, Niko Ellinger, Frank Tech Univ Dresden Chair Circuit Design & Network Theory D-01062 Dresden Germany GGDedalos Technol Serv Ltd Nicosia Cyprus

ISBN: (纸本)9781509065080

This work presents an overboard localization system based on measuring the received signal strength indicator (RSSI) between smart lifejacket tags and one interrogator station mounted inside an unmanned aerial vehicle (UAV). Localization is based on weighted least mean squares (LMS) algorithm. Simulations that study the effect of the UAV search path on the localization accuracy are presented and it shows that the parallel tracks search path gives better localization results compared to other search paths. Measurements are carried out in a search area of 500 m x 350 m, where tags are localized with a mean error of 37.5 m. The measurement results show better localization accuracy compared to other RSSI based localization algorithms.

关键词： RSSI least mean square algorithm wireless sensor networks

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NLOS mitigation in FMCW RAdAR with CLEAN peak detection 13

NLOS mitigation in FMCW RADAR with CLEAN peak detection

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13th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： Figueroa, Adrian Al-Qudsi, Belal Joram, Niko Ellinger, Frank Tech Univ Dresden Chair Circuit Design & Network Theory D-01062 Dresden Germany

ISBN: (纸本)9781509065080

A secondary frequency modulated continuous wave (FMCW) RAdAR with two-way ranging can be used for indoor and outdoor positioning with high precision and accuracy. However, non-line-of-sight (NLOS) conditions lead to multipath effects that have a negative impact on the quality of ranging and positioning measurements, if the spectral analysis is not able to detect the correct line-of-sight (LOS) path. This work proposes an improved peak detection algorithm - based on CLEAN - that works on the base band spectra in each RAdAR base station, in order to enable LOS path detection. In a simple ranging scenario at 3 m distance, the conventional parabolic interpolation for sub-bin resolution exhibits errors of up to 1.5 m (50 %) for a large fraction of the measurements. The CLEAN algorithm, however, improves upon this by drastically reducing the number of outliers. In a positioning scenario, the parabolic interpolation exhibits errors between 0.2-0.8 m, the CLEAN algorithm reduces this error to below 0.5 m.

关键词： LOS detection channel scanner CLEAN peak detection FMCW RAdAR two-way ranging local positioning

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dynamic Stability of a Closed-Loop Gate driver Enabling digitally Controlled Slope Shaping 13

Dynamic Stability of a Closed-Loop Gate Driver Enabling Digi...

引用

13th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： Groeger, Johannes Wicht, Bernhard Norling, Karl Reutlingen Univ Robert Bosch Ctr Power Elect D-72762 Reutlingen Germany Infineon Technol Austria AG A-9500 Villach Austria

ISBN: (纸本)9781509065080

A concept for a slope shaping gate driver IC is proposed, used to establish control over the slew rates of current and voltage during the turn-on and turn-off switching transients. It combines the high speed and linearity of a fully-integrated closed-loop analog gate driver, which is able to perform real-time regulation, with the advantages of digital control, like flexibility and parameter independency, operating in a predictive cycle-by-cycle regulation. In this work, the analog gate drive integrated circuit is partitioned into functional blocks and modeled in the small-signal domain, which also includes the non-linearity of parameters. An analytical stability analysis has been performed in order to ensure full functionality of the system controlling a modern generation IGBT and a superjunction MOSFET. Major parameters of influence, such as gate resistor and summing node capacitance, are investigated to achieve stable control. The large-signal behavior, investigated by simulations of a transistor level design, verifies the correct operation of the circuit. Hence, the gate driver can be designed for robust operation.

关键词： Insulated gate bipolar transistors Logic gates Switches Integrated circuit modeling Semiconductor device modeling MOSFET Capacitance

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Fractional-N PLL phase Noise Effects on Baseband Signal-to-Noise Ratio in FMCW Radars 13

Fractional-N PLL Phase Noise Effects on Baseband Signal-to-N...

引用

13th conference on ph.d. research in microelectronics and electronics (PRIME) / International conference on Synthesis, Modeling, Analysis and Simulation Methods and Application to Circuit design (SMACd)

作者： El-Shennawy, Mohammed Al-Qudsi, Belal Joram, Niko Ellinger, Frank Tech Univ Dresden Chair Circuit Design & Network Theory D-01062 Dresden Germany

ISBN: (纸本)9781509065080

This work presents a model for estimating the effect of the fractional-N phase locked loop (Frac-N PLL) phase noise (PN) on frequency modulated continuous wave (FMCW) radar baseband (BB) signal-to-noise ratio (SNR). The model captures the SNR degradation due to PN in secondary radars as well as the range correlation effect in primary radars which reduces the amount of SNR degradation. Estimates from the proposed model are in good agreement with measurement results from a dual band FMCW radar test chip fabricated on an IBM7WL BiCMOS 0.18 mu m technology. In secondary radar mode, a BB SNR of 30.0 and 23.0 dB is achieved at the 2.4 and 5.8 GHz bands respectively while in primary radar mode a BB SNR of 35.0 and 33.7 dB is achieved at the same bands. The fabricated FMCW radar test chips achieved a ranging precision of 5.2 and 0.3 mm in secondary and primary radar modes respectively.

关键词： Chirp modelling oscillators phase locked loops phase noise radar

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Layout Considerations for Common-Base Amplifiers Operating at 200 GHz 13

Layout Considerations for Common-Base Amplifiers Operating a...

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13th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： Testa, Paolo Valerio Li, Songhui Carta, Corrado Ellinger, Frank Tech Univ Dresden D-01069 Dresden Germany

ISBN: (纸本)9781509065080

This paper presents layout-considerations for common-base amplifiers operating in the deep millimeter-wave region around 200 GHz. The effects of the parasitics for different layouts have been investigated, searching for the optimal performance in terms of gain and bandwidth of operation. different layouts have been tested with the fabrication of two common-base amplifiers. The employed fabrication process is a 0.13um SiGe BiCMOS technology with max oscillation frequency (f(max)) of 450 GHz. The fabricated devices have been embedded into a balanced architecture, which guaranteed input and output matching, and high stability of the amplifier. The two designs had different values of parasitic inductance for the base-connection of the transistors. The engineered parasitics of the first design boosted the gain up to 27 dB and 23 dB at 160 GHz and 210 GHz, respectively;while the second design optimized for minimal parasitics showed a very broadband of operation ranging from 155GHz to 215 GHz. Compared against the state of the art of SiGe common-base amplifiers operating at millimeter-waves, the presented layout considerations enabled the highest reported gain-bandwidth product.

关键词： Transistors Metals Inductance Layout Integrated circuit modeling Silicon germanium Gain

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Reconfigurable Low Voltage Inverter-Based Sample-and-Hold Amplifier 13

Reconfigurable Low Voltage Inverter-Based Sample-and-Hold Am...

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作者： Ruscio, d. Centurelli, F. Monsurro, P. Trifiletti, A. Univ Rome Sapienza Dept Informat Elect & Telecommun Engn Rome Italy

ISBN: (纸本)9781509065080

In this paper, a voltage-scalable inverter-based operational amplifier suitable to be used in a reconfigurable AdC is optimized. A very low voltage sample-and-hold (SHA) circuit based on this opamp is presented to test the feasibility of a reconfigurable pipeline AdC. Simulations using STmicroelectronics 45-nm device models show that the opamp gain remains quite constant up to a supply voltage of 0.5V, and the amplifier can still be used with a supply as low as 0.3V. The SHA maximum sampling frequency decreases with supply voltage, and good performance with low power consumption is achieved.

关键词： Inverter-based opamp Voltage-scalable opamp Reconfigurable AdC Sample-and-Hold Very Low Voltage

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A mixed-signal multi-functional system for current measurement and stress detection 13

A mixed-signal multi-functional system for current measureme...

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13th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： d'Amico, Antonio djelassi, Christian Barbu, Octavian Haerle, dieter Petruzzi, Luca Baschirotto, Andrea Univ Milano Bicocca Dept Phys Milan Italy Infineon Technol Villach Austria KAI Villach Austria

ISBN: (纸本)9781509065080

This paper presents the development of a mixed-signal multi-functional system for current measurement and electrical stress detection. The system is composed of a tracking AdC and a double range ( a coarse and a fine one) current-steering dAC. The coarse range, designed for the full-scale input values [0A: 108A], has a 5b resolution and it is used for the stress detection feature. The fine range is for lower input current values [4A: 14A] and it is used for the current measurement, where more accuracy is required. With respect to the full-scale, the resolution of the fine range is 8b.

关键词： Stress Current measurement Switches Feature extraction Automobiles Robustness Quantization (signal)

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Electrical Characterization of GO at different ph towards MCF7 and MCF10a: Preliminary Result

Electrical Characterization of GO at different pH towards MC...

引用

IEEE Asia Pacific conference on Postgraduate research in microelectronics and electronics (PrimeAsia)

作者： Mazlan, N. S. Isa, Siti S. Mat Ramli, Muhammad. M. Talip, L. F. A. Halin, d. S. C. Mohamed, Rafeezul Mohtar, M. N. Univ Malaysia Perlis Sch Microelect Engn Arau Malaysia Univ Malaysia Perlis Ctr Excellence Geopolymer & Green Technol CEGeoGT Arau Malaysia Univ Malaysia Perlis Sch Mat Engn Arau Malaysia Univ Sains Malaysia AMDI Regenerat Med Cluster George Town Malaysia Univ Putra Malaysia Inst Adv Technol ITMA Serdang Malaysia Univ Putra Malaysia Dept Elect & Elect Engn Serdang Malaysia

ISBN: (纸本)9781538605240

The intracellular ph of cancerous cell is commonly acidic while the intracellular ph of normal cell is neutral. The objective of this study is to study the electrical characterization in terms of resistance between the ph of sensing material with the intracellular ph of the cells. Three different ph of Graphene Oxide (GO) were used as a solvent to analyze their interaction towards breast cancer cells (MCF7) and breast normal cells (MCF10a). GO which produced by Hummer's method was used due to their solubility and biocompatibility characteristics which easily diffuse through the cell. In this experiment, the characteristics of GO were analyzed and confirmed by using Atomic Force Microscopy (AFM) and Fourier Transform Infrared spectroscopy (FTIR). In order to measure the resistance of MCF7 and MCF10a cells after treated with GO for 24 hours, gold electrodes with 10 mu-gaps of interdigitated electrodes (IdEs) were used. The results were obtained for three periods of time which were immediate, 5 minutes and 10 minutes after the treated cells being exposed at room temperature. The results show that the resistance of MCF10a cells increased after treated with higher ph of GO which is ph 7 and the resistances of the MCF7 cells decreased as the ph of GO increased to ph 7. Finally, the viable cells were calculated by using haemocytometer in order to prove that the increased of the resistances were due to the increased number of viable cells.

关键词： graphene oxide ph interdigitated electrode MCF7 MCF10a

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An 80 x 25 Pixel CMOS Single-photon Image Sensor with Sub-ns Time Gating for Solid State 3d Scanning 13

An 80 x 25 Pixel CMOS Single-photon Image Sensor with Sub-ns...

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13th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： Ruokamo, Henna Rapakko, Harri Kostamovaara, Juha Univ Oulu Fac Informat Technol & Elect Engn Circuits & Syst Res Unit Oulu Finland

ISBN: (纸本)9781509065080

Imager topology with sub-ns time gating for 3d distance measurement application and first measurement results of the prototype are presented. The imager has a fully digital operating principle with single-photon avalanche diode detectors and on-chip narrow gating of pixel groups. The prototype detector has 80 x 25 pixels with a fill factor of 34 % in the sensor area. The chip has been fabricated in a 0.35 mu m high-voltage process and occupies 5.69 x 5.02 mm(2) area.

关键词： 3d imager single-photon avalanche diode (SPAd) time gating SPAd Array

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PRIME 2017 - 13th conference on phd research in microelectronics and electronics, Proceedings

PRIME 2017 - 13th Conference on PhD Research in Microelectro...

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13th conference on ph.d. research in microelectronics and electronics, PRIME 2017

ISBN: (纸本)9781509065073

The proceedings contain 96 papers. The topics discussed include: spin torque oscillator based BFSK Modulation;3d design of a pNML Random Access Memory;Solution Processing of Silver Nanowires for Transparent Heaters and Flexible electronics;Stochastic weight updates in phase-change memory-based synapses and their influence on artificial neural networks;Analysis of array biasing in crosspoint memories for leakage power minimization;a MOX gas sensors resistance-to-digital CMOS Interface with 8-bits Resolution and 128dB dynamic range for low-power consumer applications;and compressive image sensor architecture with on-chip measurement matrix generation.

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