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12th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： El-Shennawy, Mohammed Joram, Niko Ellinger, Frank Tech Univ Dresden Chair Circuit Design & Network Theory D-01062 Dresden Germany

ISBN: (纸本)9781509004935

This work presents the design of a 55 dB dynamic range gain interpolating variable gain amplifier (VGA). In such wide dynamic range amplifiers, small input referred offsets in the range of a few millivolts may cause the outputs to rail especially at the higher gain settings. Therefore an offset cancellation circuit is needed. The VGA design including an improved offset cancellation circuit is fabricated as part of a full automatic gain control (AGC) loop on an IBM 0.18 mu m BiCMOS 7LM technology. Measurement results are in good agreement with simulations showing that the AGC could track input power changes in the range from -44 to +11 dBm introduced to the VGA's 100 Omega differential input impedance. The VGA has a measured bandwidth of 18 MHz and input referred noise of 3.5 nV/root Hz. It can directly drive a capacitive load of 23 pF consuming 4 mA from a 3V supply.

关键词： Amplifiers attenuators feedback circuits gain control interpolation

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gPCdS: An Interactive Tool for Creating Schematic Module Generators in Analog IC design 12

gPCDS: An Interactive Tool for Creating Schematic Module Gen...

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12th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： Greif, Matthias Marolt, daniel Scheible, Juergen Reutlingen Univ Robert Bosch Ctr Power Elect Alteburgstr 150 D-72762 Reutlingen Germany

ISBN: (纸本)9781509004935

Optimization-based design automation for analog ICs still remains behind the demands. A promising alternative is given by procedural approaches such as parameterized generators, also known as PCells. We are working on a complete analog design flow based on parameterized generators for entire circuits and corresponding layout modules. Because the conventional programming of such enhanced generators is far too complicated and costly, new methods are needed to ease their development. This paper presents gPCdS (graphical PCdS), a novel tool for a designer-oriented development of schematic module generators, integrated into a common schematic entry environment. The tool is based on PCdS (Parameterized Circuit description Scheme), a meta-language for the creation of parametrized analog circuits. Schematic module generators are a very desirable complement to layout module generators in order to achieve a seamless schematic-driven layout design flow on module level. By facilitating a way of generator development that matches a design expert's mentality, gPCdS contributes to close this gap in the analog design flow.

关键词： analog design automation pcells parameterized generators procedures analog synthesis expert knowledge re-use

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Integer-based digital processor for the estimation of phase synchronization between neural signals 12

Integer-based digital processor for the estimation of phase ...

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12th conference on ph.d. research in microelectronics and electronics, PRIME 2016

作者： Romaine, James Brian delgado-Restituto, Manuel Leñero-Bardallo, Juan Antonio Rodríguez-Vázquez, Ángel Institute of Microelectronics of Sevilla and University of Sevilla Avda. Americo Vespucio s/n Seville41092 Spain

ISBN: (纸本)9781509004935

This paper reports a low area, low power, integer-based neural digital processor for the calculation of phase synchronization between two neural signals. The processor calculates the phase-frequency content of a signal by identifying the specific time periods associated with two consecutive minima. The simplicity of this phase-frequency content identifier allows for the digital processor to utilize only basic digital blocks, such as registers, counters, adders and subtractors, without incorporating any complex multiplication and or division algorithms. The low area and power consumptions make the processor an extremely scalable device which would work well in closed loop neural prosthesis for the treatment of neural diseases. © 2016 IEEE.

关键词： Neural networks

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ALd-Based 3d-Capacitors for Harsh Environments 12

ALD-Based 3D-Capacitors for Harsh Environments

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12th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： dietz, dorothee Celik, Yusuf Goehlich, Andreas Vogt, Holger Fraunhofer Inst Microelect Circuits & Syst IMS Finkenstr 61 D-47057 Duisburg Germany

ISBN: (纸本)9781509004935

Passive components like capacitors for harsh environments become more and more important, e.g. in the field of deep drilling, aerospace or in the automotive industry. They have to withstand temperatures up to 300 degrees C with a good performance concerning leakage current, breakdown voltage and capacitance density. The whole process flow has to be CMOS-compatible in order to offer the possibility for CMOS-integration. A highly n-doped Si-substrate (doping concentration about 10(20) cm(-3), phosphorus) acts as bottom electrode to keep the process flow as simple as possible. The capacitors are 3d-integrated to achieve a high capacitance density. For the dielectric layer and the upper electrode, atomic layer deposited (ALd) materials are used. The combination of the medium- and high-k dielectrics and the electrode materials are optimized, as well as some of the ALd-processes, to reach an optimum in leakage current and breakdown voltage. At a bias voltage of 3 V at room temperature, the leakage current amounts about 5 pA/mm(2), at 300 degrees C about 40 pA/mm(2). Up to +/- 15 V for room temperature, respectively up to +/- 10 V for 300 degrees C, no soft-breakdown is observed, indicating the absence of significant Fowler-Nordheim tunneling.

关键词： ALd Capacitor High-Temperature 3d-Integration

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Nonlinear Modelling of Automatic Gain Control Loops Considering Loop dynamics and Stability 12

Nonlinear Modelling of Automatic Gain Control Loops Consider...

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12th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： El-Shennawy, Mohammed Joram, Niko Ellinger, Frank Tech Univ Dresden Chair Circuit Design & Network Theory D-01062 Dresden Germany

ISBN: (纸本)9781509004935

This work presents modelling aspects of automatic gain control (AGC) loops based on linear-in-dB variable gain amplifiers (VGAs). In these loops, the VGA control voltage is also an excellent received signal strength indicator (RSSI). The VGA gain is however nonlinearly related to the control voltage. Moreover, VGAs and detectors undergo nonlinear compression under high input amplitudes during settling transients. In this work, these effects are captured by a nonlinear model based on simple and readily available components from the "analogLib" and "functional" libraries in CAdENCE design environment making it very easy and fast to build and simulate. The model is capable of verifying the AGC loop stability and capturing the loop dynamics with high accuracy compared to time consuming circuit level simulations. This provides insights into system level parameters such as AGC loop bandwidth, phase margin, settling time as well as estimating the AGC range and RSSI voltage vs. input power. Measurement results from a fabricated AGC prototype are in good agreement with simulation and modelling results thus validating the proposed modelling approach.

关键词： Amplifiers detectors feedback circuits gain control integrated circuit modelling

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Simulations of Propane and Butane Gas Sensor Based on Pristine Armchair Graphene Nanoribbon

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IOP conference Series: Materials Science and Engineering 2018年第1期362卷

作者： Haroon Rashid Ants Koel Toomas Rang Ph.D Student at Thomas Johan Seebeck Department of Electronics Tallinn University of Technology Estonia Associate Professor at Thomas Johan Seebeck Department of Electronics Tallinn University of Technology Estonia Professor at Thomas Johan Seebeck Department of Electronics Tallinn University of Technology Estonia

Over the last decade graphene and its derivatives have gained a remarkable place in research field. As silicon technology is approaching to its geometrical limits so there is a need of alternate that can replace it. Graphene has emerged as a potential candidate for future nano-electronics applications due to its exceptional and extraordinary chemical, optical, electrical and mechanical properties. Graphene based sensors have gained significance for a wide range of sensing applications like detection of biomolecules, chemicals and gas molecules. It can be easily used to make electrical contacts and manipulate them according to the requirements as compared to the other nanomaterials. The intention of the work presented in this article is to contribute in this field by simulating a novel and cheap graphene nanoribbon sensor for the household gas leakage detection. QuantumWise Atomistix (ATK) software is used for the simulations of propane and butane gas sensor. Projected device density of the states (PddOS) and the transmission spectrum of the device in the proximity of gas molecules are calculated and discussed. The change in the electric current through the device in the presence of the gas molecules is used as a gas detection mechanism for the simulated sensor.

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Using I_on/I_off to Predict Switch-Based Circuit Accuracy in an Extended Temperature Range up to 300°C 12

Using I<sub>on</sub>/I<sub>off</sub> to Predict Switch-Based...

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12th conference on ph.d. research in microelectronics and electronics (PRIME)

作者： Tallhage, Jonas Kappert, Holger Kokozinski, Rainer Fraunhofer Inst Microelect Circuits & Syst IMS Finkenstr 61 D-47057 Duisburg Germany Univ Duisburg Essen Dept Elect Components & Circuits Bismarckstr 81 D-47057 Duisburg Germany

ISBN: (纸本)9781509004935

In a top-down design approach sensible decisions about system architecture are hard to make unless one can obtain reasonable predictions about the performance of building blocks such as AdCs or amplifiers. When an extended temperature range up to 300 degrees C is targeted the problem is exacerbated by the large variations in device characteristics over temperature. A fundamental choice to be made is if and where to employ discrete-time (dT) rather than continuous-time (CT) techniques. In making this choice it must be considered whether transistor switches can be implemented well enough to allow the desired precision to be achieved. The I-on = I-off figure of merit provides a good measure of the quality of transistor switches, in this paper derivations are made which map this figure of merit to a rough prediction about the precision achievable using dT circuitry. It is found that such techniques face significant problems at high temperatures, some possible block-level architectural techniques are suggested which may be able to expand the temperature range in which dT approaches are applicable.

关键词： Forecasting

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Large area silicon photomultipliers allow extreme depth penetration in time-domain diffuse optics 12

Large area silicon photomultipliers allow extreme depth pene...

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12th conference on ph.d. research in microelectronics and electronics, PRIME 2016

作者： Martinenghi, E. dalla Mora, A. di Sieno, L. Sekar, S. Konugolu Venkata Contini, d. Pifferi, A. Dipartimento di Fisica Politecnico di Milano Piazza Leonardo da Vinci 32 MilanoI-20133 Italy

ISBN: (纸本)9781509004935

We present the design of a novel single-photon timing module, based on a Silicon photomultiplier (SiPM) featuring a collection area of 9 mm2. The module performs Single-photon Timing Resolution of about 140 ps, thus being suitable for diffuse optics application. The small size of the instrument (5 cm × 4 cm × 10 cm) allows placing it directly in contact with the sample under investigation, maximizing that way the signal harvesting. Thanks to that, it is possible to increase the source detector distance up to 6 cm or more, therefore enhancing the penetration depth up to an impressive value of 4 cm and paving the way to the exploration of the deepest human body structures in a completely non-invasive approach. © 2016 IEEE.

关键词： photons

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design and Optimization of AlN based RF MEMS Switches

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IOP conference Series: Materials Science and Engineering 2018年第1期362卷

作者： Mehadi Hasan Ziko Ants Koel Ph.D student at Thomas Johann Seebeck Department of Electronics Tallinn University of Technology Estonia Associate Professor at Thomas Johann Seebeck Department of Electronics Tallinn University of Technology Estonia

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

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Substrate integrated waveguide nShaped slot antenna for 57-64GHz band applications

Substrate integrated waveguide nShaped slot antenna for 57-6...

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2016 International conference on Control Instrumentation Communication and Computational Technologies, ICCICCT 2016

作者： Kumar, M Nanda Shanmuganantham, T. Department of Electronics Engineering Pondicherry University Pondicherry India

ISBN: (纸本)9781509052400

Feature Scenario of Substrate integrated waveguide (SIW) is a good solution for implementing centimeter and millimeter wave applications. In this paper, presented SIW π slot antenna for 57-64 GHz band applications which is designed by using Rogers RT/duriod 5880 whose dielectric constant is 2.2 and thickness of 0.381mm. Computer simulation technology studio suite is used for simulation and Observed the results reflection coefficient, VSWR, gain, radiation pattern. Obtained 3.28GHz bandwidth with respect to -10 dB reference line with two resonant frequency 60GHz and 62 GHz and return loss are -37.588dB, -33.05dB. Radiation efficiency of proposed antenna is 92.5% at 60GHz and 95.5% at 62GHz. © 2016 IEEE.

关键词： Substrate integrated waveguides

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