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检索条件"任意字段=Conference on PhD Research in Microelectronics and Electronics"

共 86 条记录，以下是51-60 订阅

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Fabless Semiconductor Implementation Model as an Enabling Factor for "Virtual Labs" in Online Postgraduate Degrees in microelectronics

Fabless Semiconductor Implementation Model as an Enabling Fa...

引用

International conference on Intelligent & Innovative Computing Applications (ICONIC)

作者： Bozanic, Mladen Sinha, Saurabh Univ Johannesburg Fac Engn & Built Environm Johannesburg South Africa Univ Johannesburg Res & Internationalisat Johannesburg South Africa

ISBN: (纸本)9781538664773

Modern technology and the increasingly readily available access to the internet in recent years have initiated the paradigm shift from the "local student" to the "global and virtual student", which is evident in the increased numbers of students who are enrolling in the postgraduate (master's and phd) degrees offered through remote means. Such students are not necessarily even present in the town or the country of the university at which they have enrolled. Traditional walk-in universities such as the University of Johannesburg, South Africa, are consequently increasing the portfolio of online degrees, which is in line with the trend seen by many universities worldwide. Education in electronics traditionally requires a hands-on approach, and the laboratory component remains a requirement even at postgraduate level. In this paper, the fabless semiconductor manufacturing approach, already deployed by many microelectronic industry giants, is aligned as an enabling factor of establishing "virtual labs", used to fulfil the practical education component of both research-based and coursework microelectronic modules offered online. A case study involving postgraduate degrees with specialization in microelectronics from the University of Johannesburg is also presented.

关键词： Postgraduate education master's degree doctoral degree microelectronics virtual labs fabless semiconductor manufacturing

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Design of Logic Gates by Using a Four-Gate Thin Film Transistor (FG TFT) 15

Design of Logic Gates by Using a Four-Gate Thin Film Transis...

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15th International conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) / 14th conference on phd research in microelectronics and electronics (PRIME)

作者： Ilik, Sachk Gencer, Fikret Basar Yelten, Mustafa Berke Istanbul Tech Univ Elect & Commun Engr Istanbul Turkey

ISBN: (纸本)9781538651537

In this paper, a p-type channel TFT device with 6 terminals (4 gates, one drain and one source) has been proposed. The device has been constructed through Sentaurus TCAD suite. Simple logic gates (NOR, NAND, NOT and XOR) are built by using different input configurations applied to four gates of the device. Device simulations have revealed that all gates can operate at 5 V with full functionality. The performance of the logic gates has been shown to be good enough for simple applications in the large-area digital electronics systems.

关键词： TFT logic gate multiple gate transistors largearea electronics

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Design of a delayless feedback path free 2nd-order two-path time-interleaved discrete-time delta-sigma modulator- a new approach

Design of a delayless feedback path free 2nd-order two-path ...

引用

phd research in microelectronics and electronics Latin America (PRIME-LA)

作者： Jafar Talebzadeh Izzet Kale Applied DSP & VLSI Research Group University of Westminster London UK

ISBN: (纸本)9781509039647;9781509039630

This paper presents the design procedure for a 2nd_order two-path Discrete-Time Time-Interleaved (DTTI) ΔΣ modulator from a conventional single-loop 2nd-order Discrete-Time (DT) ΔΣ modulator through the use of time domain equations and time-interleaving concepts [1]. The resulting modulator is free from the delayless feedback path and has only one set of integrators. The delayless feedback path issue in Time-Interleaved (TI) ΔΣ modulators is a critical restriction for the implementation of TI ΔΣ modulators and is effectively eliminated through the use of the approach proposed in this paper. The DTTI ΔΣ modulator requires only three op-amps and two quantizers both of which work concurrently, in comparison to the single-loop DT counterpart that also deploys two op-amps. For an OverSampling Ratio (OSR) of 16 and a clock frequency of 640MHz, our simulation results show a maximum Signal-to-Noise Ratio (SNR) for the DTTI ΔΣ modulator to be 70.5dB with an input bandwidth of 20MHz which has 15dB improvement in comparison to its single-loop, single-path DT counterpart.

关键词： Frequency modulation Mathematical model Clocks Bandwidth Signal to noise ratio Transfer functions

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Pressure-based intelligent stent for restenosis control 11

Pressure-based intelligent stent for restenosis control

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2015 11th conference on phd Res in Microelect & Elect PRIME

作者： Miguel, J. A. Rivas, D. Lechuga, Y. Allende, M. A. Martinez, M. Univ Cantabria Microelect Engn Grp Santander Spain

ISBN: (纸本)9781479982295

This paper describes an intelligent stent for Pulmonary Artery Restenosis (PAS) monitoring, comprising MEMS pressure sensors and CMOS electronics. First, a novel MEMS sensor design tool is described and some fabricated PolyMUMPs devices are presented. Then, a proposed low-power analog system for monitoring intelligent stents is analyzed. This architecture is fully-integrated and can be divided into four basic blocks: voltage rectifier, voltage reference, mode-selector and oscillator. The integrated circuit (IC) has been fabricated in TSMC 0.18 mu m CMOS technology. Post-layout simulation results show average power consumptions of 152.1 mu W and 547.1 mu W in idle and active states, respectively.

关键词： Biomedical Transducers Low-Power electronics Rectifiers Biomedical electronics

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Synthesis of Graphene on Ultra-Smooth Copper Foils for Large Area Flexible electronics 11

Synthesis of Graphene on Ultra-Smooth Copper Foils for Large...

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2015 11th conference on phd Res in Microelect & Elect PRIME

作者： Polat, Emre O. Balci, Osman Kakenov, Nurbek Kocabas, Coskun Dahiya, Ravinder Univ Glasgow Elect & Nanoscale Engn Glasgow G12 8QQ Lanark Scotland Bilkent Univ Dept Phys Ankara Turkey

ISBN: (纸本)9781479982295

This work demonstrates the synthesis of high quality, single layer graphene on commercially available ultra-smooth copper foils. The presented method will result in improved scalability of graphene based electronic and optical devices. Our approach is compatible with roll-to-roll printing as well as transfer printing of graphene layers on to a broad range of substrates including flexible and ultra-thin polymers. We propose that using commercially available ultra-smooth coppers provides scalable approach with the reduced variation of transport properties sourced from local graphene quality.

关键词： Graphene chemical vapor deposition smooth copper foil scalability

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Platform Based Design of 3D Hall Sensor Conditioning electronics 11

Platform Based Design of 3D Hall Sensor Conditioning Electro...

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2015 11th conference on phd Res in Microelect & Elect PRIME

作者： Sarti, Luca Sisto, Arcangelo Pilato, Luca Di Piro, Luigi Fanucci, Luca Univ Pisa Dept Informat Engn Via Caruso I-56122 Pisa Italy Italy Srl I-56123 Pisa Italy

ISBN: (纸本)9781479982295

In this paper the modeling activity for the realization of a general architecture suitable to interface a heterogeneous set of magnetic sensors for automotive applications is presented. This work represents the first step of a "platform based" approach that aims at improving system performance while minimizing time-to-market. In particular, a case study is shown in which 3D Hall sensors have been used;these sensors allow 2D and 3D magnetic field measurements in Cartesian or polar coordinates, position measurements, rotation and tilt measurements and Joystick position measurements. The system has been end-to-end modeled starting from the physical phenomenon, passing through acquisition and conditioning and ending with digital elaboration;then it has been extensively simulated to verify the correctness of its behavior and to identify the metrics for a proper analog\digital\software partitioning.

关键词： 3-axis Hall sensors platform based design

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Towards Bendable CMOS Magnetic Sensors 11

Towards Bendable CMOS Magnetic Sensors

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2015 11th conference on phd Res in Microelect & Elect PRIME

作者： Heidari, Hadi Wacker, Nicoleta Roy, Scott Dahiya, Ravinder Univ Glasgow Elect & Nanoscale Engn Div Glasgow G12 8QQ Lanark Scotland

ISBN: (纸本)9781479982295

This paper analyses the bending-induced stress effects on ultra-thin cross-shaped magnetic sensors operating in voltage- or current-modes. Both the magnetic sensor's sensitivity and the offset drift have been analysed. The optimum geometry and thickness of the Hall sensor are the important parameters to be analysed to compensate any mechanical stress related effect on the performance of sensors. Numerical simulations are carried out using the finite element method (FEM) with COMSOL Multiphysics (R) software. A compact model is implemented in Verilog-A and used for the simulations in Cadence (c) Spectre, considering a 350 nm CMOS process. The simulation results focus on magnetic sensor's sensitivity variation and offset drift induced by bending of the substrate. The simulation results show a sensitivity of 71 V/AT at 100 mT. Interestingly, the sensitivity variation induced by 250 MPa applied uniaxial stress is less than 0.02 %.

关键词： Flexible electronics Piezo-Hall Effect Piezoresistive Effect Magnetic Sensor

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VLS Growth Mechanism of Si-Nanowires for Flexible electronics 11

VLS Growth Mechanism of Si-Nanowires for Flexible Electronic...

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2015 11th conference on phd Res in Microelect & Elect PRIME

作者： Shakthivel, D. Taube, W. Raghavan, S. Dahiya, R. Univ Glasgow Sch Engn Elect & Nanoscale Engn Glasgow G12 8QQ Lanark Scotland Indian Inst Sci Ctr Nano Sci & Engn Bangalore 560012 Karnataka India

ISBN: (纸本)9781479982295

Nanowires (NWs) are promising building blocks for flexible electronics and sensors and a number of approaches have been used to develop them. Among these, the vapor-liquid-solid (VLS) mechanism has been most appealing as it provides the electronic quality NWs at low fabrication cost. For these reasons, this method plays an important role in many applications including NWs based flexible electronics. The performance of NWs based electronics and sensors depend on their quality and the underlying growth mechanism, which thus far has not attracted much attention. In this paper, we present the physical chemistry model that explains the atomistic aspects of the growth mechanism of silicon nanowires. The mechanistic equations have been derived for various steps involved in a standard VLS growth process. The supersaturation under the steady state conditions has been calculated and utilized to estimate the growth rate of Si-NWs under different temperature conditions. The estimated values are found to be consistent with the reported measured values. The results from our study indicate that the Si-NW growth rate is directly related to the temperature. High-temperatures (similar to 900 degrees C) lead to longer Si-NWs (tens of microns length). This knowledge about growth conditions for Si-NW will enable better control of Si-NW dimensions and hence will have significant positive impact on using Si-NW in flexible electronics - especially the contact printing of NWs based electronic layers on flexible substrates.

关键词： Flexible elecronics Silicon nanowires VLS mechanism Kinetic model

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Si Microwires based FETs on Flexible Substrates 11

Si Microwires based FETs on Flexible Substrates

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2015 11th conference on phd Res in Microelect & Elect PRIME

作者： Khan, Saleem Yogeswaran, Nivasan Lorenzelli, Leandro Dahiya, Ravinder Univ Trento I-38123 Trento Italy Fdn Bruno Kessler I-38123 Trento Italy Univ Glasgow Sch Engn Bendable Elect & Sensors Technol BEST Grp Glasgow G12 8QQ Lanark Scotland

ISBN: (纸本)9781479982295

This paper presents the new route for fabricating field effect transistors (FETs) on flexible or bendable substrates using a combination of transfer printing and screen printing technologies - the former is used to transfer single crystal silicon (Si) microwires on to flexible substrate and the latter to print the metal lines. A back-gated FET structure has been realized with screen printed silver (Ag) lines as the gate electrode and the transfer-printed arrays of Si microwires are utilized as semiconductor layers of the device. Epoxy based negative resist SU-8 has been used as the adhesive as well as the dielectric for the FET device. An array of 20 wires with variable widths and lengths was developed by using standard photolithography and etching techniques. A custom made micro-spotting technique has been used to obtain the source and drain contacts on top of Si microwires. Good mechanical and electrical responses of the FETs have been observed during the cyclic tests and current-voltage (I-V) measurements respectively.

关键词： Transfer Printing Screen-Printing Silicon Microwires Flexible electronics

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Infineon technologies: From product to system and the human resources excellence as key competitive advantage

Infineon technologies: From product to system and the human ...

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Ph.D. research in microelectronics and electronics (PRIME)

作者： Sabine Herlitschka Infineon Technologies Austria AG Villach Austria

ISBN: (纸本)9781467345798

Summary form only given. Major global challenges of the 21st century are drivers for the industry and especially for the semiconductor industry. microelectronics and semiconductors are key enabling technologies and will contribute significantly to increasing Innovation and Productivity. Infineon provides semiconductors and system solutions, focusing on three central needs of modern society: Energy Efficiency, Mobility and Security. Tight Customer Relationships are based on system know-how and application understanding. People in our company are the key to our success. Their experiences, knowledge and passion drive us to new levels of excellence. Thus, people excellence is a core element of our strategy. Our success depends on creating an attractive and stimulating working environment for our employees, who represent "living" diversity with staff coming from 55 nations. As one of the most innovative companies, Infineon has set up a corporate phd network. For our phd's we offer best conditions for up-to-date research & development and an attractive multi-disciplinary educational opportunity at an international workplace. The presentation will provide an overview on current technology developments in Infineon's focus areas and phds' opportunities to become part of a successful global company.

关键词： Companies microelectronics Technological innovation Productivity Focusing

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