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检索条件"任意字段=Conference on Photon Processing in Microelectronics and Photonics V"

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Silicon photonics Integrated 16-QAM Modulator Exploiting Only Binary Driving Electronics

Silicon Photonics Integrated 16-QAM Modulator Exploiting Onl...

引用

Optical Fiber Communications conference and Exhibition (OFC)

作者： Fresi, F. velha, P. Meloni, G. Malacarne, A. Sorianello, v. Midrio, M. Toccafondo, v. Faralli, S. Romagnoli, M. Poti, L. Scuola Super Sant Anna TeCIP Via Moruzzi 1 Pisa Italy CNIT Natl Lab Photon Networks Via Moruzzi 1 Pisa Italy

ISBN: (纸本)9781943580071

A silicon photonics integrated reconfigurable nested Mach-Zehnder interferometer including tunable splitters and four independent phase modulators has been designed and fabricated. Thanks to the custom architecture, 16-QAM modulation is achieved with simple binary driving signals and successfully detected up to 20Gbaud with BER below the FEC level.

关键词： Modulators Optical networks Optical transceivers Quadrature phase shift keying Signal processing Silicon photonics

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A fiber coupled source of identical single photons

A fiber coupled source of identical single photons

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conference on Lasers and Electro-Optics Europe (CLEO EUROPE)

作者： H. Snijders J. A. Frey J. Norman v. P. Post A. Gossard J. E. Bowers M. P. van Exter D. Bouwmeester W. Löffler Huygens-Kamerlingh Onnes Laboratory Leiden University Department of Physics University of California Santa Barbara Department of Electrical and Computer Engineering University of California Santa Barbara

ISBN: (纸本)9781509067374

Summary form only given. High quality sources of single and identical (indistinguishable) photons are essential for photonic quantum information processing including boson sampling, cluster-state quantum computing, and optical quantum repeaters. To enable the use of several single photon sources in parallel and to allow the implementation of complex photonic networks, it is essential that the single photon source can be integrated easily and efficiently with optical fiber technology. Here we show a first all-solid-state InGaAs quantum dot based, integrated cavity-QED enhanced, single photon source. The source is operated by resonant optical pumping through an excitation fiber, and the single photons are collected in the fiber attached to the transmission channel of the cavity.

关键词： photonics Optical fibers Quantum dots Optical fiber networks Optical pumping Quantum computing Optical fiber devices

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RESTORATION OF MULTILAYERED SINGLE-photon 3D LIDAR IMAGES

RESTORATION OF MULTILAYERED SINGLE-PHOTON 3D LIDAR IMAGES

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European Signal processing conference

作者： Abderrahim Halimi Rachael Tobin Aongus McCarthy Stephen McLaughlin Gerald S. Buller School of Engineering and Physical Sciences Heriot-Watt University Edinburgh U.K.

This paper presents a new algorithm for the restoration of multilayered three-dimensional laser detection and ranging (3D Lidar) images. For multilayered targets such as semi-transparent surfaces or when the transmitted light of the laser beam is incident on multiple surfaces at different depths, the returned signal may contain multiple peaks. Considering the Poisson statistics of these observations leads to a convex data fidelity term that is regularized using appropriate functions accounting for the spatial correlation between pixels and the sparse depth repartition of targets. More precisely, the spatial correlation is introduced using a convex total variation (Tv) regularizer, and a collaborative sparse prior is used to introduce the depth prior knowledge. The resulting minimization problem is solved using the alternating direction method of multipliers (ADMM) that offers good convergence properties. The algorithm was validated using field data representing a man standing 1 meter behind camouflage, at an approximate stand-off distance of 230m from the system. The results show the benefit of the proposed strategy in that it improves the quality of the imaged objects at different depths and under reduced acquisition times.

关键词： Signal processing algorithms Surface emitting lasers photonics Optimization Laser beams Three-dimensional displays Laser radar

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Heterogeneous HI-v/Si3N4 integration for quantum photonic circuits

Heterogeneous HI-V/Si3N4 integration for quantum photonic ci...

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conference on Lasers and Electro-Optics Europe (CLEO EUROPE)

作者： M. Davanco J. Liu L. Sapienza C.-Z. Zhang J.v. De Miranda Cardoso v. verma R. Mirin S. W. Nam L. Liu K. Srinivasan Center for Nanoscale Science and Technology National Institute of Standards and Technology Gaithersburg USA Maryland NanoCenter University of Maryland College Park USA University of Southampton Southampton UK South China Normal University Guangzhou China National Institute of Standards and Technology Boulder USA Federal University of Campina Grande Brazil

ISBN: (纸本)9781509067374

photonic integration is as an enabling technology for photonic quantum science, providing great experimental scalability, stability, and functionality. Although the increasing complexity of quantum photonic circuits has allowed proof-of-principle demonstrations of quantum computation, simulation, and metrology, further development is severely limited by the on-chip photon flux that can be made available from external quantum light sources. Overcoming such limitations would allow a significant scaling of quantum photonic experiments, and enable quantum-level investigation of many physical processes observable on-chip through nanophotonic and nanoplasmonic structures (e.g., Kerr, optomechanical, single-photon nonlinearities). Towards such goals, we have developed a scalable, heterogeneous III-v/Si 3 N 4 integration platform for quantum photonic circuits based on passive Si 3 N 4 waveguides which directly incorporate nanophotonic single-photon sources based on self-assembled InAs quantum dots (QDs). InAs quantum dots constitute the most promising solid-state triggered single-photon sources to date, while Si 3 N 4 waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities which can be used for linear and nonlinear optical signal processing down to the quantum level. In our platform, the building blocks of which are shown in Fig. 1(a), active GaAs waveguide-based geometries containing InAs QDs are designed to efficiently capture QD-emitted single-photons. Captured photons, confined within the GaAs core, are then transferred with high efficiency into a passive Si 3 N 4 waveguide network via adiabatic mode transformers. Figure 1(b) shows an example device fabricated with our platform: a GaAs microring resonator containing InAs quantum dots, evanescently coupled to a GaAs bus waveguide, which is in turn coupled to an underlying Si 3 N 4 waveguide through adiabatic mode-transformers. The photoluminescence spectrum for this device, in Fig.

关键词： Optical waveguides photonics Gallium arsenide Quantum dots Quantum computing System-on-chip Adiabatic

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Device and Mixed-mode Simulations of Single photon Avalanche Diode 13

Device and Mixed-mode Simulations of Single Photon Avalanche...

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2016 13th IEEE International conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Hong-Jiao Yang Xiang-Liang Jin School of physics and Optoelectronics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip

ISBN: (纸本)9781467397209

This paper presents device and mixed-mode simulation of single photon avalanche diode（SPAD） device. Devic simulations show that the breakdown mechanism of ou diode is indeed avalanche. Mixed-mode simulations can accurately simulate the ignition of the detector due to photon absorption, the fast avalanche current build-up the self-sustaining charge-multiplication process, and th self-quenching of the avalanche pulse.

关键词： Estimation Field programmable gate arrays OFDM Modulation Filtration Clocks Signal processing algorithms

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Simulator of human visual perception 4

Simulator of human visual perception

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conference on Optics, photonics and Digital Technologies for Imaging Applications Iv

作者： Bezzubik, vitalii v. Belashenkov, Nickolai R. ITMO Univ Kronverksky Pr 49 St Petersburg 197101 Russia

ISBN: (纸本)9781510601413

Difference of Circs (DoC) model allowing to simulate the response of neurons - ganglion cells as a reaction to stimuli is represented and studied in relation with representation of receptive fields of human retina. According to this model the response of neurons is reduced to execution of simple arithmetic operations and the results of these calculations well correlate with experimental data in wide range of stimuli parameters. The simplicity of the model and reliability of reproducing of responses allow to propose the conception of a device which can simulate the signals generated by ganglion cells as a reaction to presented stimuli. The signals produced according to DoC model are considered as a result of primary processing of information received from receptors independently of their type and may be sent to higher levels of nervous system of living creatures for subsequent processing. Such device may be used as a prosthesis for disabled organ.

关键词： Retinal receptive fields model of visual processing visual perception ganglion cell simulator artificial retina

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Optical Waveguides Written Deep Inside Silicon by Femtosecond Laser

Optical Waveguides Written Deep Inside Silicon by Femtosecon...

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conference on Lasers and Electro-Optics Europe

作者： Ihor Pavlov Onur Tokel Svitlana Pavlova viktor Kadan Ghaith Makey Ahmet Turnali Tahir Colakoglu Ozgun Yavuz Fatih Omer Ilday Bilkent University Physics Department Cankaya Ankara 06800 Turkey Institute of Physics National Academy of Sciences of Ukraine Kiev 03028 Ukraine Middle East Technical University Physics Department Cankaya Ankara 06800 Turkey Bilkent University Electrical and Electronics Department Cankaya Ankara 06800 Turkey

ISBN: (纸本)9781509067374

photonic devices that can guide, transfer or modulate light are highly desired in electronics and integrated silicon photonics. Through the nonlinear processes taking place during ultrafast laser-material interaction, laser light can impart permanent refractive index change in the bulk of materials, and thus enables the fabrication of different optical elements inside the material. However, due to strong multi-photon absorption of Si resulting delocalization of the light by free carriers induced plasma defocusing, the subsurface Si modification with femtosecond laser was not realized so far [1, 2]. Here, we demonstrate optical waveguides written deep inside silicon with a 1.5-μm high repetition rate femtosecond laser. Due to pulse-to-pulse heat accumulation for high repetition rate laser, additional thermal lensing prevents delocalization of the light around focal point, allowing the modification. The laser with 2-μJ pulse energy, 350-fs pulse width, operating at 250 kHz focused in Si produces permanent modifications. The position of the focal point inside of the sample is accurately controlled with pumpprobe imaging during processing. Optical waveguides of ～20-μm diameter, and up to 5.5-mm elongation are fabricated by translating the beam focal position along the optical axis. The waveguides are characterized with a 1.5-μm continuous-wave laser, through optical shadow-graphy (Fig. 1 a-b, e) and direct light coupling (Fig.1 c-d, f). The measured refractive index change obtained by quantitative shadow-graphy is ～6×10~(-4). The numerical aperture of the waveguide measured from decoupled light is 0.05.

关键词： Femtosecond lasers Image processing Laser light Optical elements Refractive index Thermal lensing

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THE FORMATION OF ZINC AND COPPER OXIDES THIN FILMS FOR HETEROSTRUCTURE SOLAR CELLS 6

THE FORMATION OF ZINC AND COPPER OXIDES THIN FILMS FOR HETER...

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conference on photonics for Solar Energy Systems vI

作者： Afanasjev, v. P. Konoplev, G. A. Chigirev, D. A. Mukhin, N. v. Terukov, E. I. Terukova, E. E. St Petersburg Electrotech Univ 5 Prof Popov Str St Petersburg 197376 Russia R&D Ctr Thin Film Technol Energet Ioffe Inst 26 Polytech Skaya Str St Petersburg 194021 Russia

ISBN: (纸本)9781510601437

Optical and electrical properties (Haze spectra, carrier concentration, mobility, resistivity) of zinc oxide thin films deposited on glass substrates were studied by plasma treatment and by thermal annealing. Films of copper oxides on the glass and CuO/ZnO structures were formed by vacuum deposition of copper films followed by thermal annealing in air. Optical and structural properties of the CuO films and electrical properties of ZnO/CuO structures were investigated upon thermal treatment. It is shown that a photosensitive n-ZnO/p-CuO heterojunction may be formed by rapid (similar to 1 min) thermal processing in air.

关键词： oxide semiconductor heterostructure zinc and copper oxides solar cell

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Optical signal processing for indoor positioning using a-SiCH technology 5

Optical signal processing for indoor positioning using a-SiC...

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conference on Silicon photonics and photonic Integrated Circuits v

作者： vieira, M. A. vieira, M. Louro, P. Silva, v. ISEL Elect Telecommun & Comp Dept P-1959007 Lisbon Portugal CTS UNINOVA P-2829516 Monte De Caparica Caparica Portugal DEE FCT UNL P-2829516 Monte De Caparica Caparica Portugal

ISBN: (纸本)9781510601369

In this paper, we use the nonlinear property of SiC multilayer devices under Uv irradiation to design an optical processor for indoor positioning. The transducer combines the simultaneous demultiplexing operation with the photodetection and self-amplification. The proposed coding is based on SiC technology. Based on that, we present a way to achieve indoor localization using the parity bits and a navigation syndrome. A representation with a 4 bit original string colour message and the transmitted 7 bit string, the encoding and decoding accurate positional information processes and the design of SiC navigation syndrome generators are discussed and tested. A visible multilateration method estimates the position of the device by using the decoded information received from several, non-collinear transmitters. The location and motion information is found by mapping position and estimates the location areas. Since the indoor position of the LED light source is known from building floor plans and lighting plans, the corresponding indoor position and travel direction of a mobile device can be determined.

关键词： a-SiC: H technology optical sensor transmitter receiver demultiplexer WDM indoor positioning

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(Si)GeSn nanostructures for Light Emitters 5

(Si)GeSn nanostructures for Light Emitters

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conference on Silicon photonics and photonic Integrated Circuits v

作者： Rainko, D. Stange, D. von den Driesch, N. Schulte-Braucks, C. Mussler, G. Ikonic, Z. Hartmann, J. M. Luysberg, M. Mantl, S. Grutzmacher, D. Buca, D. Forschungszentrum Julich Peter Grunberg Inst PGI 9 D-52425 Julich Germany Forschungszentrum Julich JARA Fundamentals Future Informat Technol D-52425 Julich Germany Forschungszentrum Julich Ernst Ruska Ctr Peter Grunberg Inst PGI 5 D-52425 Julich Germany Univ Leeds Sch Elect & Elect Engn Inst Microwaves & Photon Leeds LS2 9JT W Yorkshire England CEA LETI MINATEC Campus Grenoble France Univ Grenoble Alpes Grenoble France

ISBN: (纸本)9781510601369

Energy-efficient integrated circuits for on-chip or chip-to-chip data transfer via photons could be tackled by monolithically grown group Iv photonic devices. The major goal here is the realization of fully integrated group Iv room temperature electrically driven lasers. An approach beyond the already demonstrated optically-pumped lasers would be the introduction of GeSn/(Si)Ge(Sn) heterostructures and exploitation of quantum mechanical effects by reducing the dimensionality, which affects the density of states. In this contribution we present epitaxial growth, processing and characterization of GeSn/(Si) Ge(Sn) heterostructures, ranging from GeSn/ Ge multi quantum wells (MQWs) to GeSn quantum dots (QDs) embedded in a Ge matrix. Light emitting diodes (LEDs) were fabricated based on the MQW structure and structurally analyzed via TEM, XRD and RBS. Moreover, EL measurements were performed to investigate quantum confinement effects in the wells. The GeSn QDs were formed via Sn diffusion /segregation upon thermal annealing of GeSn single quantum wells (SQW) embedded in Ge layers. The evaluation of the experimental results is supported by band structure calculations of GeSn/(Si)Ge(Sn) heterostructures to investigate their applicability for photonic devices.

关键词： GeSn Direct bandgap Optoelectronics Silicon photonics Group Iv alloys Light emitting diodes Multi quantum wells Quantum dots

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