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检索条件"任意字段=Conference on Photon Processing in Microelectronics and Photonics V"

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Machining on Rear Surface of a Silicon Substrate by an Infrared Femtosecond Laser via Non-linear Absorption Processes 18

Machining on Rear Surface of a Silicon Substrate by an Infra...

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18th CIRP conference on Electro Physical and Chemical Machining (ISEM)

作者： Khanh Phu Luong Tanabe, Rie Ito, Yoshiro Nagaoka Univ Technol Dept Mech Engn 1603-1 Kamitomioka Nagaoka Niigata 9402188 Japan

Silicon (Si) is a semiconductor material widely used in modem technologies such as microelectronics, MEMS, and photonics. Si is an opaque material in visible to near -infrared wavelength region but it transmits any light longer than 1127 nm, which corresponds to its band gap energy of 1.12 ev. Therefore, Si can be considered as transparent material for radiations longer than 1127 nm. Here we have proposed a new laser microprocessing method of Si, which increases the efficiency, accuracy and flexibility in machining. The thickness of the Si substrate used was 320 tlin and a femtosecond laser at 1552 nm was focused by a 100x infrared objective lens on the rear surface of the substrate. However, only a shallow groove was formed: its depth was approximately 170 nm or less. It is expected that when the laser is focused on the Si rear surface, where it is contacting with an etchant, wet etching will occur due to the temperature rise caused by the laser irradiation. Therefore, to increase the machining rate, we tried laser -assisted backside wet -etching using KOH solution as the etchant. The maximum groove depth was increased to more than 3 tlin. The effects of laser irradiation conditions on machined grooves were examined. The results achieved showed rather scattered values and indicated that the maximum groove depth was not always produced at high energy deposition conditions. One of the reasons might be the formation of hydrogen bubbles from the chemical reaction between Si and KOH, which block the contact of Si and KOH. (C) 2016 The Authors. Published by Elsevier B.v.

关键词： Silicon processing rear surface KOH etching femtosecond laser infrared laser

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Influence of SiPM Single photon Timing Resolution on Coincidence Timing Resolution with Fast Scintillator

Influence of SiPM Single Photon Timing Resolution on Coincid...

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IEEE Nuclear Science Symposium

作者： D. Philippov E. Popova v. Belyaev P. Buzhan A. Stifutkin S. vinogradov National Research Nuclear University “MEPhI” Moscow Russian Federation Accelerator Science and Technology Centre Cockcroft Institute Warrington UK Department of Physics University of Liverpool Liverpool UK Lebedev Physical Institute Russian Academy of Sciences Moscow Russian Federation

A coincidence timing resolution (CTR) of scintillation detectors based on SiPMs depends on both photodetector and scintillator properties. The photodetector-related contribution is very important and has a considerable impact on the CTR. The CTR dependence on photon detection efficiency (PDE) is well studied and clarified, but as soon as advances in developments of fast scintillators and fast SiPMs make CTR approaching to a fundamental limit, a role of a single photon timing resolution (SPTR) is increased, and it requires more attention and studies. This study presents results of CTR measurements of LYSO crystals with "old" standard and timing optimized KETEK SiPM samples of 3×3 mm~2 size obtained with developed digital signal processing. To complement and extend the studies on LYSO CTR with analysis on how SPTR affects multi-photon timing resolution (MPTR) with different light intensity profiles, experiments with different light sources were carried out and results were compared with an analytical model of SiPM timing resolution.

关键词： Timing Analytical models Scintillators photonics Detectors Signal resolution Digital signal processing

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Creation and functionalization of defects in SiC by proton beam writing

Creation and functionalization of defects in SiC by proton b...

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European conference on Silicon Carbide & Related Materials (ECSCRM)

作者： T. Ohshima T. Honda S. Onoda T. Makino M. Haruyama T. Kamiya T. Satoh Y. Hijikata W. Kada O. Hanaizumi A. Lohrmann J. R. Klein B. C. Johnson J. C. McCallum S. Castelletto B. C. Gibson H. Kraus v. Dyakonov G. v. Astakhov National Institutes for Quantum and Radiological Science and Technology (QST) Takasaki Japan Saitama University Saitama Japan Faculty of Science and Technology Gunma University Kiryu Japan School of Physics The University of Melbourne Victoria Australia Centre for Quantum Computing and Communication Technology The University of Melbourne Victoria Australia School of Engineering RMIT University Melbourne Victoria Australia ARC Centre of Excellence for Nanoscale BioPhotonics RMIT University Melbourne Victoria Australia Experimental Physics VI Julius Maximilian University of Würzburg Würzburg Germany

ISBN: (纸本)9781509026142

Proton beam writing (PBW) a with 1.7 Mev proton micro beam was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC were investigated at room temperature using a confocal laser scanning microscope. A peak around 900 nm associated with the silicon vacancy was observed for the irradiated SiC without any post-implantation processing such as annealing. The overall depth profile of photon counts detected from irradiated areas is in good agreement with simulated vacancy depth profile. This suggests that the silicon vacancy can be applied as an ion tracking detector. In addition, since the silicon vacancy is known as a single photon source with a spin that can be controlled at room temperature, PBW is expected to be a useful tool to fabricate spin qubits.

关键词： Silicon carbide Particle beams Silicon Writing Australia photonics Ions

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Design rules to control the tensile strain in Ge μ-membranes fabricated from GeOI substrates for photonics applications 12

Design rules to control the tensile strain in Ge μ-membrane...

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12th IEEE International conference on Group Iv photonics (GFP)

作者： Dias, G. O. Rouchon, D. Widiez, J. Hartmann, J. M. Fowler, D. Chelnokov, A. Reboud, v. Gassenq, A. Tardif, S. Guiloy, K. Pauc, N. Escalante, J. Duchemin, I. Niquet, Y-M. Rieutord, F. Calvo, v. Faist, J. Geiger, R. Zabel, T. Sigg, H. Univ Grenoble Alpes CEA Leti Minatec F-38054 Grenoble France Univ Grenoble Alpes INAC SP2M F-38000 Grenoble France ETH Zurich Switzerland Paul Scherrer Inst LMN CH-5232 Villigen Switzerland

ISBN: (纸本)9781479982554

Applying the right tensile strain to suspended membranes [1] can make Germanium a direct band-gap semiconductor, which is most promising way to low-threshold lasing [2]. The current key to reach the targeted high tensile strain is the quality of the Germanium. Epitaxied Germanium (Ge) on Silicon (Si) suffers from dislocations at its interface due to the lattice mismatch between Si and Ge (Figure 1 a). Higher crystalline quality can be obtained by fabricating Germanium on Insulator (GeOI) substrates by Smart Cut? technology [3]. However, the processing has to be adapted to obtain specific “optical” GeOI substrates [4], much thicker than standard microelectronics GeOI.

关键词： Germanium Tensile strain Silicon design rules Substrates photonics SUSPENDED MEMBRANE Joint Dislocations

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Design of Multi-Spectral Images Real-Time Segmentation System

Design of Multi-Spectral Images Real-Time Segmentation Syste...

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International conference on photonics and Optical Engineering (icPOE)

作者： Zhai Bo Qu Youshan Han Yameng Zhou Jiang Chinese Acad Sci Xian Inst Opt & Precise Mech Xian 710119 Peoples R China Univ Chinese Acad Sci Beijing 100049 Peoples R China

ISBN: (纸本)9781628415650

In order to realize the real-time segmentation processing of multi-spectral images in practice, a real-time multi-spectral images segmentation system composed of four TMS320C6455 DSPs, two virtex-4(v4 XC4vLX80) FPGAs and one virtex-2 Pro(v2 Pro20) FPGA is designed. Through the optimization of the cooperation processing of the multi-DSP and multi-FPGA, the parallel multi-task processing ability of the DSPs and the effective interface coordination ability of the FPGAs in the built system are used fully. In order to display the processing ability, the segmentation test experiments of 10 spectra visible images, with 1024x1024, segmented by the Multi-scale Image Segmentation Method, was done in the built multi-spectral images segment system. The experiment results prove that the multi-DSP and multi-FPGA multi-spectral images processing system designed in this paper satisfies the real-time processing requirement in engineering practice.

关键词： Multi-spectral Imagery Image Segmentation Multi-scale Image Segmentation Method Multi-DSP Multi-FPGA Parallel processing

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Accelerating particle identification for high-speed data-filtering using OpenCL on FPGAs and other architectures

Accelerating particle identification for high-speed data-fil...

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International conference on Field Programmable Logic and Applications

作者： Srikanth Sridharan Paolo Durante Christian Faerber Niko Neufeld LHCb CERN Geneva Switzerland

The upgrade of the LHCb experiment at CERN envisions a Data Acquisition and Event Filtering system that captures 100% of the data generated by the various sub-detectors, which measure with great precision the 40 million collisions per second of protons in CERN's Large Hadron Collider. The sensor readings result in about 40 Tbit/s of data, which need to be processed on a large computer farm. Since the computation on CPUs, as it is currently done, does not scale well, it is necessary to accelerate a good portion of the code to meet the computational demands of the proposed system. We are therefore looking for means to accelerate the most time-consuming parts of the event-filtering code. The Ring Imaging Cherenkov (RICH) detectors are one of the component detectors of the overall LHCb experiment. The Cherenkov photon that hits the detector are processed to determine the track of the original particle that caused these photons. The particle velocity and mass, derived from the Cherenkov angle, is used to identify the particle. The entire RICH photon reconstruction algorithm accounts for 50% of the second High Level Trigger (HLT) process and Cherenkov angle reconstruction comprises about 20% of the RICH and is a good candidate for acceleration. An OpenCL implementation of Cherenkov angle reconstruction algorithm that calculates the trajectory of photons in the RICH detector was developed. The paper looks at the results of the OpenCL implementation of the algorithm on the Nallatech 385 card with Altera Stratix v FPGA, Nvidia GeForce GTX 690 GPU card and the Intel Xeon processor for comparison. While the two GPUs are 3.6× faster than a single FPGA, the FPGA is 3.4× better than two GPUs and 6.6× better than two multicore CPUs when energy efficiency is factored. Although significant speedup of computation was achieved on all the above architectures by using OpenCL, a good portion of the gain was lost due to the overhead of data transfer and parallelism. Different strategies a

关键词： Field programmable gate arrays Graphics processing units photonics Computer architecture Acceleration Computational modeling Hardware design languages

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Silicon photonics 1

Silicon Photonics

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1st International conference on Opto-Electronics and Applied Optics (IEM OPTRONIX)

作者： Pavesi, Lorenzo Univ Trento Dept Phys Nanosci Lab Trento Italy

ISBN: (纸本)9788132223672;9788132223665

Silicon photonics is no more an emerging research topic but is an actual technology with commercial products already available on the market. Quantum confinement of carriers or spatial localization of photons allows enhancing dramatically and widening the scope and potential of silicon photonics. The tremendous evolution of internet has urged the microelectronic and telecommunication industries to look at technologies to face the bandwidth, speed and power consumptions that internet requires. One technology which is emerging as a comprehensive solution to this is integrated photonics where complexity, reconfigurability and intelligence are thrusts. An ideal platform for such integration is to use the same material that has permitted the success of microelectronics in the last century, i.e., silicon. Silicon photonics is a technology where photonics devices are fabricated by using standard silicon technologies [1-4]. In this way it is possible to leverage on the capabilities of the silicon industry to mass manufacture cheap photonics devices. A key ingredient to achieve this goal is to exploit the high level of integration that parallel and planar processing allows. Still, integration in photonics is limited to few hundreds of different components in a single chip due to the complexity of integrated photonic circuits and to the needs of hybrid integration technologies to face all the different functionalities needed. Nowadays, all the different functions have been generated and integrated in silicon photonics by using silicon based materials or, when they are not possible, hybrid integration [4]. An example of this is the signal source which in silicon photonics is provided by a hybrid III-v on silicon laser.

关键词： Silicon photonics

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Coherent Terabit Communications Using a Quantum-Dash Mode-Locked Laser and Self-Homodyne Detection

Coherent Terabit Communications Using a Quantum-Dash Mode-Lo...

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Optical Fiber Communications conference and Exhibition (OFC)

作者： Pfeifle, J. Shkarban, I. Wolf, S. Kemal, J. N. Weimann, C. Hartmann, W. Chimot, N. Joshi, S. Merghem, K. Martinez, A. Weber, M. Ramdane, A. Lelarge, F. Freude, W. Koos, C. Karlsruhe Inst Technol Inst Photon & Quantum Elect IPQ D-76021 Karlsruhe Germany Karlsruhe Inst Technol Inst Data Proc & Elect IPE D-76021 Karlsruhe Germany Karlsruhe Inst Technol IMT D-76021 Karlsruhe Germany III V Lab Marcoussis France CNRS UPR20 Lab Photon & Nanostruct Marcoussis France

We transmit 18 GBd 16QAM signals on 25 spectral lines of a quantum-dash mode-locked laser diode, achieving a 1.562 Tbit/s aggregate data rate, Phase noise is cancelled by self-homodyne detection using LO tones transmi... 详细信息

ISBN: (纸本)9781557529374

关键词： Coherent communications Diode lasers Mode locking Noise reduction Phase noise Signal processing

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Simultaneous Phase Noise Reduction of 30 Comb Lines from a Quantum-Dash Mode-Locked Laser Diode Enabling Coherent Tbit/s Data Transmission

Simultaneous Phase Noise Reduction of 30 Comb Lines from a Q...

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Optical Fiber Communications conference and Exhibition (OFC)

作者： Pfeifle, J. Watts, R. Shkarban, I. Wolf, S. vujicic, v. Landais, P. Chimot, N. Joshi, S. Merghem, K. Calo, C. Weber, M. Ramdane, A. Lelarge, F. Barry, L. Freude, W. Koos, C. Karlsruhe Inst Technol Inst Photon & Quantum Elect IPQ D-76021 Karlsruhe Germany Dublin City Univ Sch Elect Engn Rince Inst Dublin 9 Ireland Karlsruhe Inst Technol Inst Data Proc & Elect IPE D-76021 Karlsruhe Germany III V Lab Marcoussis France CNRS UPR20 Lab Photon & Nanostruct Marcoussis France Karlsruhe Inst Technol IMT D-76021 Karlsruhe Germany

A feed-forward heterodyne scheme is shown to simultaneously reduce the phase noise of many comb lines from a quantum-dash mode-locked laser diode (QD-MLLD). This enables the first coherent data transmission using QD-M... 详细信息

ISBN: (纸本)9781557529374

关键词： Differential phase shift keying Diode lasers Mode locking Noise reduction Phase noise Signal processing

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Distributed Bragg reflectors integration in highly strained Ge micro-bridges on 200 mm GeOI substrates for laser applications 12

Distributed Bragg reflectors integration in highly strained ...

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12th IEEE International conference on Group Iv photonics, GFP 2015

作者： Gassenq, A. Tardif, S. Guilloy, K. Pauc, N. Escalante, J. Duchemin, I. Niquet, Y.-M. Rieutord, F. Calvo, v. Dias, G. Osvaldo Rouchon, D. Widiez, J. Hartmann, J.M. Fowler, D. Chelnokov, A. Reboud, v. Geiger, R. Zabel, T. Sigg, H. Faist, J. University Grenoble Alpes CEA-INAC-SP2M Grenoble38000 France University Grenoble Alpes and CEA Leti Minatec Campus Grenoble CedexF-38054 France Paul Scherrer Institut VilligenCH-5232 Switzerland

ISBN: (纸本)9781479982554

Highly strained germanium is thought of as a gain medium for silicon photonics laser sources. In order, to turn the bandgap from indirect to direct, tensile strain is nowadays investigated. This could lead in the future to the monolithic integration of efficient germanium-based laser sources with Si microelectronics technologies. Recent results show that several percent of strain can be induced in Ge micro-bridges [1-2]. The other key parameter to build a laser is definition of a cavity. Whispering gallery mode [3] or short cavities like vCSEL or photonic crystals [4-5] were proposed in the literature. Here, we present long and strained cavities that were obtained through the use of Distributed Bragg Reflectors (DBR) on each side of suspended Ge micro-bridges. Devices are fabricated from high quality 200 mm Germanium-On-lnsulator (GeOI) substrates obtained by the Smart-Cut™ technology. Such substrates are used to enhance the rapture strain limit of the germanium bridges thanks to the lack of dislocations at interfaces. Laser design modelling, membrane processing and experimental results will be presented in detail. © 2015 IEEE.

关键词： Germanium

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