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International conference on Microelectronics, ICM

作者： Muhammad Mateen Fawad Kashif Riaz Muhammad Hamza Zulfiqar Muhammad Nasir Arshad Khan Abdelkrim Khelif Department of Electrical Engineering Information Technology University of the Punjab Lahore Pakistan Division of Information and Computing Technology College of Science and Engineering Hamad Bin Khalifa University Doha Qatar

ISBN: (数字)9798350379396

ISBN: (纸本)9798350379402

Plastic-based Human-Machine Interfaces (HMIs) offer convenience and affordability, but they often lack the customization options needed to cater to diverse user needs. In contrast, macro keypads and touchpads are gaining popularity due to their ability to be customized for specific tasks, form factor, software integration, and adaptability to various digital tasks, such as gaming, content creation, and productivity tasks. Due to their non-biodegradability and short serviceable lifespan, portable electronics and HMIs have significantly contributed to electronic waste (e-waste), with projections indicating that e-waste production will reach 110 million tonnes by 2050. To address these waste issues, green HMIs are needed that can be customized for various digital applications and have a minimal environmental footprint. This paper presents green paper-based capacitive macro (PCM) touchpads, customizable for various digital applications. The PCM touchpad's form factor can be tailored to specific needs, and its functionality can be personalized both digitally and through physical customization. The PCM touchpads, equipped with capacitive touch sensors, serve as versatile HMI, enabling seamless interaction with various digital applications on mobile devices and laptops. The PCM touchpads are manufactured using a simple, solvent-free, and environmentally friendly technique that involves directly cutting and pasting readily available materials onto a flexible paper substrate. This allows for easy customization and personalization of PCM touchpads for various applications within home settings, as required materials, such as paper, copper tape, and microcontrollers, are readily accessible. The PCM touchpads, made from biodegradable materials such as paper, can be easily disposed of, reused, recycled or repurposed, reducing their environmental impact. The performance of the PCM touchpad was evaluated by customizing it for a variety of digital applications, including a miniature

关键词： Phase change materials Electric potential Human-machine systems Green products Tactile sensors Games Electronic waste Software Sustainable development Substrates

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Innovative Approaches in Advanced VLSI Design for High-Performance computing applications

Innovative Approaches in Advanced VLSI Design for High-Perfo...

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Intelligent Cyber Physical systems and Internet of Things (ICoICI), International conference on

作者： K. Sathish A. Sathya P. Pattunnarajam A Shubhangi Rao S Lakshmisridevi Pushpa Priya C Department of ECE Saveetha School of Engineering Saveetha University Chennai Tamilnadu India Department of CSE Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology Chennai Tamil Nadu India Department of ECE Sri Venkateswara College of Engineering Sriperumbudur Tamil Nadu India Department of EEE MLR Institute of Technology Hyderabad India Department of CSE Chennai Institute of Technology Chennai Tamil Nadu India Department of ECE Dhanalakshmi College of Engineering Chennai Tamil Nadu India

ISBN: (数字)9798331540661

ISBN: (纸本)9798331540678

The increasing demand for high-performance computing (HPC) has driven significant advancements in Very Large Scale Integration (VLSI) design. This paper explores innovative approaches in advanced VLSI design, emphasizing methodologies and technologies that enhance HPC performance. Advanced materials, like high-k/metal gate stacks and silicon-on-insulator (SOI) technologies, are also discussed for their roles in improving efficiency and minimizing leakage currents. Thermal management is crucial for maintaining system reliability. The paper examines microfluidic cooling, thermoelectric cooling, and thermal-aware design strategies that ensure optimal operating temperatures in dense VLSI circuits. The transition to three-dimensional (3D) integrated circuits (ICs) represents a significant advancement, offering higher interconnect density and reduced signal delay. Heterogeneous integration, combining different devices on a single chip, further enhances performance by providing specialized processing capabilities. The paper reviews AI-specific hardware, like tensor processing units (TPUs) and neuromorphic chips, for the increasing computational demands of AI and ML applications. Design automation tools and methodologies play a crucial role in advancing VLSI design. Machine learning algorithms for design space exploration, optimization, and verification processes are highlighted, demonstrating their ability to reduce design cycles and improve overall quality. In close, this paper highlights the multifaceted innovations in advanced VLSI design that are driving the capabilities of high-performance computing. from power efficiency and thermal management to architectural advancements and specialized accelerators, the continuous evolution of VLSI technologies is essential for meeting the growing demands of modern HPC applications, paving the way for future breakthroughs in various scientific and industrial domains.

关键词： Cooling High performance computing Integrated circuit interconnections Very large scale integration Thermal management Reliability engineering Integrated circuit reliability Artificial intelligence Three-dimensional integrated circuits Optimization

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photonics in Switching and computing, PSC 2021

Photonics in Switching and Computing, PSC 2021

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photonics in Switching and computing, PSC 2021

ISBN: (纸本)9781557528209

The proceedings contain 64 papers. The topics discussed include: performance enhancement of wavelength selective switch with double gratings and wavefront aberration correction;feasibility study of scalable 16×16 SOA-based optical switches on imos for data communication application;Kerr switch and memory based on counterpropagating light in microresonators;photonic photorefractive mac accelerator for machine learning;not all Ising machines are created equal: choice of nonlinearity induces order-of-magnitude differences in computational performance;adaptive and dynamic RF systems enabled by bio-inspired photonics and microwave photonics;cross-layer design to optimize optical amplifier placement in metro networks;inexact silicon photonics: from devices to applications;impact on WDM networks when carrier BAUD rate grows;and spectrum allocation exploiting different core selection patterns for graceful degradation of inter-core crosstalk in space-division multiplexing elastic optical networks.

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Proposed Design for Beyond 5G Antenna for Upgraded applications with review

Proposed Design for Beyond 5G Antenna for Upgraded Applicati...

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International conference on computing and Networking Technology (ICCNT)

作者： Smrity Dwivedi Deptt. of Electronics Engg IIT (BHU) India

In this paper, design and simulation of THz antennas for beyond 5G has been proposed and investigated. This new era of beyond 5G is useful to connect most of the devices and create a proper balance between systems and users as per demand of technology. For that purpose, a large bandwidth is supposed to be required with better gain. Hence, a new frequency region that is at THz band is utilized. Graphene has been taken as base material having capability of operating at high frequency and also to support graphene, polymide and silicon dioxide have been taken as substrate materials along with layering of air and ground as well. There are five different designs with same structure parameters with different dielectric constant values have been simulated using CST microwave studio for improvement of gain and bandwidth. Few literatures survey has been discussed with evolution of terahertz. Also merit and demerit have been discussed for proposed structures. Bandwidth is increased from 0.3 THz to 0.6 THz and the gain is increased 3.02 dB to10.09 dB for the frequency range from 0.1 THz to 1 THz. As many designed have already been discussed in section I and II, the new thing which is being introduced in this paper, a simple design, easy fabrication, low loss as it has no slots, available materials with simple feeding techniques.

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What Are 2D materials Good For?

What Are 2D Materials Good For?

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International Symposium on VLSI Technology, systems and applications

作者： Eric Pop Stanford University

ISBN: (纸本)9781665409247

This talk will present my (admittedly biased) perspective of what two-dimensional (2D) materials could be good for. For example, they may be good for applications where their ultrathin nature and lack of dangling bonds give them distinct advantages, such as flexible electronics [1] or DNA-sorting nanopores [2] . They may not be good for applications where conventional materials work well, like in transistors thicker than a few nanometers. I will focus on the case of 2D materials for 3D heterogeneous integration of electronics, which presents significant advantages for energy-efficient computing [3] . In this context, 2D materials could be monolayer transistors with ultralow leakage [4] (taking advantage of larger band gaps than silicon), used as access devices for high-density data storage [5] . For example, recent results from our group have shown monolayer transistors with record performance [6] , [7] , which cannot be achieved with sub-nanometer thin conventional semiconductors. I will also describe some less conventional applications, using 2D materials as highly efficient thermal insulators [8] and as thermal transistors [9] . These could enable control of heat in “thermal circuits” analogous with electrical circuits. Combined, these studies reveal fundamental limits and some unusual applications of 2D materials, which take advantage of their unique properties.

关键词： Transistors Very large scale integration Two dimensional displays Three-dimensional displays Silicon photonic band gap Performance evaluation

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Performance Enhancement of Kesterite Cu2ZnSn(S,Se)4 Thin Film Solar Cell

Performance Enhancement of Kesterite Cu2ZnSn(S,Se)4 Thin Fil...

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Automation, computing and Renewable systems (ICACRS), International conference on

作者： Satyendra Kumar Swati Arora Department of Electronics Engineering Swami Keshwanand Institute of Technology Management & Gramothan Jaipur India

ISBN: (纸本)9781665460859

Work presented in this paper is based on findings of SCAPS simulation of Kesterite CZTSSe thin film solar cell. The main objective of this work is to investigate and improve overall performance of nanostructured Cu 2 ZnSn(S 1-x ,Se x ) 4 /CdS/ZnO solar cell through optimization of thickness, band gap and doping concentration in absorption layer. These are major parameters which determine performance of the cell on large extent. The highest efficiency (simulation) reported for CZTSSe/CdS/ZnO before is 13%. materials with large absorption coefficient in visible spectrum of solar irradiance, regular crystal structure and optimum band gap are being searched by researchers and industrialists for solar applications. There are less number of material compositions used for solar cell thin film application with concerns of cell-efficiency, device flexibility, manufacturing cost and availability of source materials in nature. Because extracting elements from its ores and then making a compound for the required applications raised manufacturing cost significantly. Adequacy of Kesterites in nature, less toxic, easy extraction of CZTS as compared to chalcogenide CIGS make it competent for the application. Removal of toxic elements introduced additional challenges which can be future objective of this work. The proposed optimizations have increased the cell-efficiency by 22.76% w.r.t. the reference work.

关键词： Renewable energy sources Costs photonic band gap Absorption Photovoltaic cells Doping Semiconductor process modeling

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AI-Enhanced IoT systems for Smart Predictive Maintenance in Steel Plants

AI-Enhanced IoT Systems for Smart Predictive Maintenance in ...

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Trends in Material Science and Inventive materials (ICTMIM), International conference on

作者： S. Lourdu Jame S. Suguna Mallika Pramod Pandey Bhavani R L. M. Merlin Livingston B Meenakshi Department of Electrical and Electronics Engineering SRM Institute of Science and Technology Chennai Tamil Nadu India Department of Computer Science and Engineering CVR College of Engineering Hyderabad Telangana India Symbiosis Institute of Technology Nagpur Campus Symbiosis International (Deemed University) Pune Maharashtra India Department of Computer Science and Engineering Saveetha School of Engineering Saveetha Institute of Medical and Technical Sciences Saveetha University (SIMATS) Chennai Tamil Nadu India Department of Electronics and Communication Engineering DMI College of Engineering Chennai Tamil Nadu India Department of Electrical and Electronics Engineering Sri Sairam Engineering College Chennai Tamil Nadu India

ISBN: (数字)9798331501488

ISBN: (纸本)9798331501495

This paper introduces a smart Internet of Things (IoT) system that uses artificial intelligence (AI) to improve operational efficiency and reduce downtime in steel plants through predictive maintenance. It addresses equipment failures in steel plants with deployment of an AI-driven IoT system using neural networks for facilitating accurate defect prediction and minimizing maintenance expenses. The system uses neural networks for continuous operation and proactive maintenance, which are essential in steel production processes to provide productivity and safety. Early problem detection and health monitoring are made possible by integrating IoT devices for real-time data gathering and cloud computing for scalable data processing in the proposed system. Anomalies and impending breakdowns may be foreseen using neural networks trained on time-series sensor data, paving the way for predictive maintenance. The solution improves equipment dependability, optimizes maintenance schedules, and decreases operating costs using historical data and machine learning algorithms. Results from real-world applications show that the system may enhance maintenance plans while reducing downtime in steel manufacturing facilities. The results highlight how technology may revolutionize maintenance procedures, gain insight into proactive equipment management, and help the steel sector progress in smart production.

关键词： Schedules Data privacy Computational modeling Neural networks Real-time systems Maintenance Steel Internet of Things Monitoring Predictive maintenance

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Integrated Microprobes for Terahertz Near-Field Time-Domain Spectroscopy

Integrated Microprobes for Terahertz Near-Field Time-Domain ...

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International conference on Infrared and Millimeter Waves

作者： Maira Beatriz Perez Sosa Alaa Jabbar Jumaah Idelfonso Tafur Monroy Jaime Gómez Rivas Shihab Al-Daffaie Department of Electrical Engineering Eindhoven University of Technology Groene Loper 5 Eindhoven North Brabant Netherlands

ISBN: (数字)9781728194271

ISBN: (纸本)9781728194288

Despite the large range of promising applications for Terahertz technology, its real deployment has been limited by bulky equipment, mechanical disturbance, high power consumption, and low flexibility systems. Here, we present the design of a THz platform based on photonic integrated devices and photoconductive antennas that can reduce the footprint of all discrete optics in THz spectroscopy systems by two orders of magnitude. The integrated platform aims to contribute to the technological bridge that will take the THz spectrum from bulky systems to on-chip platforms.

关键词： Bridges Spectroscopy Power demand Terahertz materials Optics System-on-chip Time-domain analysis

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NUV-Enhanced 4H-SiC SACM APDs

NUV-Enhanced 4H-SiC SACM APDs

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Device Research conference

作者： Jonathan Schuster Michael A. Derenge Jeremy L. Smith Gregory A. Garrett Daniel B. Habersat Brenda VanMil Dina M. Bower Shahid Aslam Tilak Hewagama Michael Wraback Anand V. Sampath U.S. Army DEVCOM Army Research Laboratory (ARL) Adelphi 20783 USA Department of ECE Boston University Boston MA USA Department of Astronomy University of Maryland College Park MD USA NASA Goddard Space Flight Center Planetary Systems Laboratory Greenbelt MD USA

ISBN: (数字)9798350373738

ISBN: (纸本)9798350373745

Numerous applications require detectors with high gain or single-photon sensitivity while demonstrating good sensitivity throughout the ultraviolet (UV) spectrum from 200 – 400 nm; these sensors are of significance for solar-blind imaging and spectroscopy applications given their insensitivity to parasitics from longer wavelength scattered light. 4H-SiC avalanche photodiodes (APDs), with an indirect bandgap of 380 nm, have exhibited both high UV-C (< 280 nm) responsivity and high multiplication gain at low dark current density (0.75 nA/cm 2 < J dark < 63 nA/cm 2 at a gain of 1000, as well as > 10 6 peak multiplication gain [1] . These properties make 4H-SiC APDs very attractive for single photon counting applications. However, the quantum efficiency (QE) of these devices diminishes dramatically in the NUV at wavelengths longer than ~280 nm due to weak absorption of photons, where, for example, 20 μm of absorbing material is sufficient to absorb only 70% of the incident photons at 340 nm illumination. In the NUV, Shen et al. demonstrated SiC Schottky diodes with internal QE between 80–90% by using unintentionally doped 20–50 μm thick layers with doping sufficiently low to allow significant depletion at high bias [2] such that collection from the 50 μm thick layer was due to a mix of drift and diffusion. A separate-absorption charge-multiplication (SACM) APD structure may enable both improved QE and avalanche gain through extension of the absorber layer (AL) thickness to 20–50 μm while maintaining a large field in the multiplication layer (ML), ideally at a lower AL doping enabling both depletion and longer diffusion length [3] . However, using the SACM architecture to improve the NUV unity gain QE possesses unique challenges regarding the transport of photocarriers from the thick AL across the charge layer (CL) to the ML. This is further compounded when binary semiconductor materials are used ( e.g. , 4H-SiC) instead of alloyed heterostructures ( e.g. , InGaP or HgCd

关键词： Spectroscopy Schottky diodes Sensitivity Silicon carbide photonic band gap Metals Doping

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Toward Nonvolatile Switching in Silicon photonic devices

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LASER & photonicS REVIEWS 2021年第6期15卷 2000501-2000501页

作者： Parra, Jorge Olivares, Irene Brimont, Antoine Sanchis, Pablo Univ Politecn Valencia Nanophoton Technol Ctr Camino Vera S-N Valencia 46022 Spain

Nonvolatile switching is still a missing functionality in current mainstream silicon photonics complementary metal-oxide-semiconductor platforms. Fundamentally, nonvolatile switching stands for the ability to switch between two or more photonic states reversibly without needing additional energy to hold each state. Therefore, such a feature may push one step further the potential of silicon photonics by offering new ways of achieving photonic reconfigurability with ultrasmall energy consumption. Here, a detailed review of current developments that enable nonvolatile switching in silicon photonic waveguide devices is provided. Nonvolatility is successfully demonstrated either based on device engineering or by hybrid integration of silicon waveguides with materials exhibiting unique optical properties. Furthermore, several approaches with high potential for evolving toward a nonvolatile behavior with enhanced performance are also being explored. In most cases, many development steps are still necessary to ensure reliable devices. However, this research field is expected to progress in the coming years boosted by current and emerging applications benefiting from such functionality, such as new paradigms for photonic computing or advanced reconfigurable circuits for programmable photonic systems.

关键词： nonvolatile optical switching photonic integrated circuits photonic memory photonic waveguides silicon photonics

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