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2nd International conference on Human Interaction and Emerging Technologies: Future applications, IHIET-AI 2020

作者： Giusino, Davide Fraboni, Federico Rainieri, Giuseppe De Angelis, Marco Tria, Annagrazia La Bara, Laura Maria Alessandra Pietrantoni, Luca Department of Psychology University of Bologna Via Filippo Re 10 Bologna40126 Italy Interdepartmental Centre for Industrial Research in Advanced Mechanical Engineering Applications and Materials Technology University of Bologna Via Zamboni 18 Bologna40126 Italy

ISBN: (纸本)9783030442668

Exoskeletons are wearable robots designed to restore or augment human physical abilities and, indirectly, cognitive functions. These devices can be classified based on the sector of application, the body part they are intended to support or enhance, the degree of assistance, and the source which they gather power from. Regardless of such technical features, exoskeletons are usually equipped with Human-Machine Interfaces (HMIs), allowing users to interact with the system, both physically and cognitively. The current paper critically reviews the state of the art of HMIs, and discusses the future challenges concerning Human Factors issues associated with the experience of utilisation of HMIs for wearable assistive exoskeletons in neuromotor rehabilitation settings. An overview of extant types of rehabilitative exoskeletons’ HMIs is provided, as well as a discussion on novel user experience research questions posed in light of the recent developments in the field. © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2020.

关键词： Wearable technology

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Introduction to JSTQE Issue on photonics for Deep Learning and Neural computing

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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2020年第1期26卷

作者： Prucnal, Paul R. Shastri, Bhavin J. Fischer, Ingo Brunner, Daniel Princeton Univ Dept Elect Engn Princeton NJ 08540 USA Queens Univ Dept Phys Engn Phys & Astron Kingston ON K7L 3N6 Canada UIB CSIC IFISC Inst Cross Disciplinary Phys & Complex Syst E-07122 Palma De Mallorca Spain CNRS UMR 6174 Inst FEMTO ST Dept Opt F-25030 Besancon France

The papers in this special section examine neuromorphic photonics which combines optical physics and unconventional computing, resulting in a new class of ultrafast information processors for neuromorphic information and signal processing, machine learning, and high-performance computing. These processors can enable applications where low latency, high bandwidth, and low switching energies are paramount. Fundamentally, such computing concepts heavily depend on interconnects, a functionality where photonic processors can significantly outperform electronic systems. By combining the high bandwidth and efficiency of photonic devices with the adaptive, parallelism and complexity similar to the brain, photonic neural networks have the potential to be faster than conventional neural networks, while consuming less energy.

关键词： Special issues and sections Deep learning photonics Ultrafast optics Neuromorphics Optical switches Optical computing Neural networks

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Reshaping Light: Reconfigurable photonics Enabled by Broadband Low-loss Optical Phase Change materials 11

Reshaping Light: Reconfigurable Photonics Enabled by Broadba...

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Micro- and Nanotechnology Sensors, systems, and applications XI conference / SPIE Defense and Security Symposium

作者： Zhang, Yifei Chou, Jeffrey B. Shalaginov, Mikhail Rios, Carlos Roberts, Christopher Robinson, Paul Bohlin, Bridget Du, Qingyang Zhang, Qihang Li, Junying Kang, Myungkoo Goncalves, Claudia Richardson, Kathleen Gu, Tian Liberman, Vladimir Hu, Juejun MIT Dept Mat Sci & Engn Cambridge MA 02139 USA MIT Lincoln Lab 244 Wood St Lexington MA 02173 USA Univ Cent Florida Coll Opt & Photon Orlando FL 32816 USA

ISBN: (纸本)9781510626300

Optical phase change materials (O-PCMs) are a unique class of materials which exhibit extraordinarily large optical property change (e.g. refractive index change > 1) when undergoing a solid-state phase transition. Traditional O-PCMs suffer from large optical losses even in their dielectric states, which fundamentally limits the performance of optical devices based on the materials. To resolve the issue, we have recently demonstrated a new O-PCM Ge-Sb-Se-Te (GSST) with broadband low loss characteristics. In this talk, we will review an array of reconfigurable photonic devices enabled by the low-loss O-PCM, including nonvolatile waveguide switches with unprecedented low-loss and high-contrast performance, free-space light modulators, bi-stable reconfigurable metasurfaces, and transient couplers facilitating wafer-scale device probing and characterizations.

关键词： Optical phase change materials reconfigurable photonics integrated photonics metasurfaces

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Temperature Compensation Schemes for In-Memory computing using Phase-Change Memory

Temperature Compensation Schemes for In-Memory Computing usi...

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IEEE International conference on Artificial Intelligence Circuits and systems (AICAS)

作者： Iason Giannopoulos Manuel Le Gallo Vara Prasad Jonnalagadda Evangelos Eleftheriou Abu Sebastian IBM Research -Zurich Rüschlikon Switzerland

ISBN: (数字)9781728149226

ISBN: (纸本)9781728149233

The explosive growth in data-centric artificial intelligence related applications necessitates exploration of non-von Neumann computing paradigms such as in-memory computing. The ability to perform certain computational tasks within the memory unit will reduce dramatically the time and energy that is spent into shuttling the data from the memory to the processing unit. However, the nanoscale resistive memory devices that are useful for these technologies suffer from non-ideal characteristics. In this work we deal with the computational precision loss due to the strong and inhomogeneous temperature dependence of resistive devices and in particular phase-change memory. We describe a temperature compensation method that applies to resistive crossbar arrays and its realization as a peripheral circuit. We derive array-level temperature compensation functions that are remarkably effective for projected phase-change memory devices. We simulate the system and experimentally validate its efficacy in the task of matrix-vector multiplications. The computational precision is found to be equivalent to an 8-bit multiplier at elevated temperatures.

关键词： Phase change materials Temperature Temperature measurement Temperature dependence Phase change memory Performance evaluation Programming

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Future of Power Electronics from TCAD Perspective

Future of Power Electronics from TCAD Perspective

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International conference on Simulation of Semiconductor Processes and devices (SISPAD)

作者： Terry Ma Synopsys Inc. Mountain View CA USA

ISBN: (数字)9784863487635

ISBN: (纸本)9781728173542

Power electronics are an integral part of our daily life. The applications of power electronics are widespread, supporting multiple industries such as automotive, telecommunication, transportation, utility systems, aerospace, etc. According to a new market research report including the analysis of the COVID-19 impact [1], the global power electronics market is expected to grow at a Compounded Annual Growth Rate (CAGR) of 4.7% from $35.1 billion in 2020 to $44.2 billion by 2025. As depicted in Figure 1, the key drivers of growth are 1) increasing integration of power electronics, and 2) increasing use of wide bandgap (WBG) materials. In terms of regional growth, Asia Pacific (APAC) including China, Japan, South Korea, and India is expected to grow the fastest compared to North America, Europe, and Rest of the World (Figure 2).

关键词： Industries photonic band gap Transportation Market research Power electronics Semiconductor process modeling North America

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Tunable band-gap and isotropic light absorption from bismuth-containing GaAs core-shell and multi-shell nanowires

arXiv

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arXiv 2020年

作者： Usman, Muhammad School of Computing and Information Systems Melbourne School of Engineering University of Melbourne ParkvilleVIC3010 Australia School of Physics University of Melbourne ParkvilleVIC3010 Australia

Semiconductor core−shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The selection of a suitable material system is crucial for custom designed nanowires tailored for optimised device performance. The bismuth containing GaAs materials are an imminent class of semiconductors which not only enable an exquisite control over the alloy strain and electronic structure but also offer the possibility to suppress internal loss mechanisms in photonic devices. Whilst the experimental efforts to incorporate GaBixAs1−x alloys in the nanowire active region are still in primitive stage, the theoretical understanding of the optoelectronic properties of such nanowires is only rudimentary. This work elucidates and quantifies the role of nanowire physical attributes such as its geometry parameters and bismuth incorporation in designing light absorption wavelength and polarisation response. Based on multi-million atom tight-binding simulations of the GaBixAs1−x/GaAs core−shell and GaAs/GaBixAs1−x/GaAs multi−shell nanowires, our results predict a large tuning of the absorption wavelength, ranging from 0.9 µm to 1.6 µm, which can be controlled by engineering either Bi composition or nanowire diameter. The analysis of the strain profiles indicates a tensile character leading to significant light-hole mixing in the valence band states. This offers a possibility to achieve polarisation-insensitive light interaction, which is desirable for several photonic devices involving amplification and modulation of light. Furthermore, at low Bi compositions, the carrier confinement is quasi type-II, which further broadens the suitability of these nanowires for myriad applications demanding large carrier separations. The presented results provide a systematic and comprehensive understanding of the GaBixAs1−x nanowire properties and highlight new

关键词： Gallium arsenide

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Optical gain evaluation on rare-earth doped Yttria-stabilized Zirconia for hybrid integration on silicon photonics platforms 5

Optical gain evaluation on rare-earth doped Yttria-stabilize...

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conference on Integrated Optics - Design, devices, systems, and applications V, held at SPIE Optics + Optoelectronics

作者： Ruiz-Caridad, Alicia Marcaud, Guillaume Ramirez, Joan Manel Largeau, Ludovic Maroutian, Thomas Matzen, Sylvia Alonso-Ramos, Carlos Agnus, Guillaume Guerber, Sylvain Baudot, Charles Boeuf, Frederic Vakarin, Vladyslav Duran-Valdeiglesias, Elena Cassan, Eric Marris-Morini, Delphine Lecoeur, Philippe Vivien, Laurent Univ Paris Saclay Univ Paris Sud CNRS Ctr Nanosci & NanotechnolC2N Palaiseau F-91120 Palaiseau France Thales Joint Lab Nokia Bell Labs Lab 3 5 1 Ave Augustin Fresnel F-91767 Palaiseau France CEA 1 Ave Augustin Fresnel F-91767 Palaiseau France TR&D STMicroelect SAS F-38920 Crolles France

ISBN: (数字)9781510627291

ISBN: (纸本)9781510627284;9781510627291

New optical materials for hybrid photonic integration on silicon platform have become a hot research topic aiming at providing additional functionalities. In this regard, functional oxides are a very interesting class of materials due to their singular properties. Material engineering is commonly employed to tune and manipulate such properties at will, thus being functional oxides often used to build active reconfigurable elements in complex systems. Transparent oxides with moderate refractive indexes are targeted for hybrid integration due to the rewarding benefits envisioned. Yttria-Stabilized Zirconia (YSZ) is a chemically stable oxide(1) with a transparency range that spans from the visible to the mid-IR2, with a refractive index around 2.1, which makes this functional oxide interesting for the development of low-loss waveguides when grown over a low contrast substrate. While these optical properties are very interesting for various applications, including on-chip optical communications and sensing, YSZ has remained almost unexplored in photonics up to now. Nevertheless, this complex functional oxide shows interesting optical properties such as low-moderate propagation losses of 2 dB/cm at telecom wavelengths(3). In our work, we explore the deposition of erbium doped YSZ by pulsed layer deposition (PLD) on a multilayer approach providing outstanding luminescence in correspondence with C-band of telecommunication window (lambda = 1530 nm) and in the visible range by means of up-conversion processes. The optical properties of active layers of Er-doped YSZ grown on waveguides in different platforms and under resonant pumping will be discussed in this paper, as well as their propagation losses. Based on the preliminary study of these active hybrid systems, we envision light amplification functionalities based on rare-earth doped functional oxides.

关键词： functional oxides nanophotonics rare-earth erbium yttria-stabilized zirconia optical gain hybrid photonic platform optical amplifiers

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21st International conference on Transparent Optical Networks, ICTON 2019

21st International Conference on Transparent Optical Network...

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21st International conference on Transparent Optical Networks, ICTON 2019

ISBN: (纸本)9781728127798

The proceedings contain 416 papers. The topics discussed include: nanoparticles for quadratic nonlinear optics: from dielectric to metallic structures;complex dynamics of long cavity lasers;covert communications-based information reconciliation for quantum key distribution protocols;multimode selenide-chalcogenide glass fiber-based MIR spontaneous emission sources with shaped output spectrum;engineering photonic structures and functional optical materials: from structural health monitoring to biomedical applications;distributed coherent radars enabled by fiber networks;luminescence properties of praseodymium-doped crystals;tilted Bragg gratings as an efficient platform for integrated multimode interference devices;and statistical approach for modeling connectors in SI-POF avionics systems.

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Integrated photonic and plasmonic technologies for microwave signal processing enabling mm-wave and sub-THz wireless communication systems 13

Integrated photonic and plasmonic technologies for microwave...

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photonics West OPTO conference on Broadband Access Communication Technologies XIII

作者： Burla, Maurizio Salamin, Yannick Bonjour, Romain Abrecht, Felix Hoessbacher, Claudia Haffner, Christian Heni, Wolfgang Fedoryshyn, Yuriy Werner, Dominik Baeuerle, Benedikt Josten, Arne Watanabe, Tatsuhiko Hillerkuss, David Elder, Delwin Dalton, Larry Leuthold, Juerg Swiss Fed Inst Technol IEF Gloriastr 35 CH-8092 Zurich Switzerland Univ Washington Dept Chem Seattle WA 98195 USA

ISBN: (纸本)9781510625334

In order to support the 1,000 times increase in data rates expected from next-generation wireless communica-tions (5G), radically novel technological approaches will be needed. Integrated microwave photonics (IMWP) techniques are identified as an enabling technology for 5G, thanks to their potential to improve the performance of electronics by leveraging the broadband characteristics and flexibility of operation of photonic integrated cir-cuits. Relevant applications of IMWP are optical signal generation and distribution of mm-waves towards anten-na terminals, optical control of antenna arrays, frequency-reconfigurable filtering, and more. The rapidly grow-ing field of plasmonics has shown a breakthrough in performance for optical modulators with fast operation (500 GHz) and ultra-compact footprint (10s mu m(2)). This paper reports recent achievements on the use of integrat-ed plasmonic devices for millimeter-wave signal conversion and processing for next-generation wireless systems.

关键词： Microwave photonics 5G mobile communication electrooptic modulators plasmons photonic integrated circuits beam steering millimeter wave communication

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Low Noise Amplifier Design for IoT Wireless Communication systems 4

Low Noise Amplifier Design for IoT Wireless Communication Sy...

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4th International conference on Precision Machinery and Manufacturing Technology (ICPMMT)

作者： Lai, Yeong-Lin Lai, Yeong-Kang Lee, Guo-Jang Zheng, Chun-Yi Huang, Ping-Wen Lee, Ming-Ho Chiang, Yun Wei Natl Changhua Univ Educ Dept Mechatron Engn Changhua 50007 Taiwan Natl Chung Hsing Univ Dept Elect Engn Taichung 40227 Taiwan

In the era of Internet of Things (IoT), the Internet has evolved from a simple Internet function of web information access to intelligent functions of identification, position, monitoring, and management of things. devices in the IoT must transmit data between the devices and equipment connecting to cloud. As a fog computing architecture is established proximally at the local ends of the IoT, the data transmission volume and transmission delay can be effectively reduced. IoT wireless communication is one of the essential items for complete data transmission between the devices and on-line equipment. This paper proposes the low noise amplifier (LNA) design that can be applied to the RF front-end receiver of a 2.45-GHz wireless communication system for IoT applications. The LNA is required to have characteristics of low noise factor and high signal gain in order to amplify weak signals received by the antenna. In this study, the design of 2.45-GHz LNA adopts an architecture of power-constrained simultaneous noise and input matching on the basis of the 0.18-mu m CMOS process technology in order to achieve simultaneous noise and input matching at low power conditions. Both the architectures of push-pull and forward substrate bias are also utilized. The LNA demonstrates the characteristics of low noise factor, high gain, and good 1-dB gain compression. The LNA shows good potential for IoT wireless communication system applications.

关键词： Internet of things

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