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Design and simulation of high-power quantum cascade laser beam combining module

Design and simulation of high-power quantum cascade laser be...

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2024 International conference on optoelectronic Materials and devices, ICOMD 2024

作者： Chen, Hongyi Qin, Wenbin Zhao, Fan Cao, Yinhua Jiang, Menghua Liu, Youqiang Beijing Engineering Research Center of Laser Technology Beijing University of Technology Beijing100124 China Key Laboratory of Trans-scale Laser Manufacturing Technology Beijing University of Technology Ministry of Education Beijing100124 China College of Physics and Optoelectronic Engineering Beijing University of Technology Beijing100124 China Beijing Gongda Yaxin Optoelectronic Technology Co. Ltd. Beijing100124 China

ISBN: (数字)9781510689046

ISBN: (纸本)9781510689039

To address the problems of low output power of single-tube quantum cascade lasers (QCLs) and the complex alignment process in conventional spatial beam combining structures, this paper presents a high-power beam combining module for QCLs. Unlike the conventional stepped spatial ensemble structure, this module places seven QCLs symmetrically staggered on a planar base. The combining optics consist of a beam steering and compression system that redirects the beams and allows for dense spatial arrangement, effectively reducing the distance between beams. Furthermore, the lenses are positioned on a flat platform, which lowers mechanical processing complexity, simplifies alignment, and minimizes module size. Finally, the densely packed combined beam is focused and linked to an optical fiber, allowing for long-distance, flexible transmission of high-power mid-infrared laser output. simulations demonstrate that the output power of seven single-tube QCLs with a power of 1.5 W after spatial beam combining is 10.484 W. The combined beam beam was coupled into a fluoride fiber with a numerical aperture of 0.26 and a core diameter of 100 μm, with an output power of 10.164 W and a fiber coupling efficiency of 96.94%. © 2025 SPIE.

关键词： Quantum cascade lasers

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simulation and Experimental Research on Top-hat Shaped Femtosecond Laser processing of GaN 4

Simulation and Experimental Research on Top-hat Shaped Femto...

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4th International Computational Imaging conference, CITA 2024

作者： Wang, Mingyuan Zhang, Tong Chen, Lin Liu, Yanlei Wang, Zhiyong Henan Key Laboratory of Infrared Spectrum Measures and Applications College of Physics Henan Normal University Henan Xinxiang453007 China School of Physics and Optoelectronic Engineering Beijing University of Technology Beijing100124 China

ISBN: (纸本)9781510688834

The wide bandgap semiconductor material gallium nitride (GaN) has a wide range of applications in optoelectronic devices. As a consequence of the evolution of the device, the conventional processing techniques are no longer capable of fulfilling the necessary requirements. The utilisation of a top-hat femtosecond laser can lead to a significant enhancement in the quality and efficiency of the processing, due to the benefits conferred by the short pulse, high peak power and uniform energy distribution. In this paper, a multi-physics field model is established using COMSOL Multiphysics® to study the thermal field dynamics and the spatial and temporal variations in free electron density on the surface of GaN following irradiation by a top-hat femtosecond laser. The aim is to gain insight into the influence of this process on the optical properties and ablation morphology. The model is then validated by comparing the results with experimental data, which demonstrate the grooving process of GaN with a flat surface edge, a smooth bottom of the groove, and a perpendicular sidewall. The findings indicate that alterations in the free electron density impact the optical characteristics of the material surface. The distribution of free electrons within the material is a determining factor in the ablation morphology. The experimental results support the hypothesis that the top-hat laser has significant potential for use in the preparation of GaN devices. © 2025 SPIE.

关键词： Gallium nitride

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All-optical tunable integrator based on microring resonator assisted by GST superlattice 2

All-optical tunable integrator based on microring resonator ...

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2nd International conference on Optical Communication and Optical Information Processing, OCOIP 2024

作者： Zhong, Wentao Dong, Yida Shen, Mei Lei, Lei Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen518060 China China College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Academy for Advanced Interdisciplinary Studies Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen518000 China

ISBN: (数字)9781510688995

ISBN: (纸本)9781510688988

This paper presents the design and simulation analysis of a tunable optical integrator based on ZnS-SiO2/Ge2Sb2Te5 superlattice (GST-SL) phase change material (PCM). The transfer function of the integrator is realized through a silicon microring resonator cladded with a three-layer GST-SL (GST-SL3-MRR). The integration of the PCM into the microring resonator enables a reconfigurable Q-factor, allowing for tunable integration orders between 0.5th and 1st. Through laser-induced phase transitions between amorphous and crystalline states, the transmission spectrum of the MRR can be dynamically adjusted. simulation results show that the integration time window reaches 300 ps for the first-order integration, and the tunable integration results closely align with the ideal mathematical predictions. demonstrating the device's highly tunable performance. Further simulations of applications for quickly solving ordinary differential equations highlight the potential applications of our device in areas such as optical signal processing and image recognition. © 2025 SPIE.

关键词： Zinc Selenide

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Durability assessment and experimental validation of the ion optics system for ion thrusters

Durability assessment and experimental validation of the ion...

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2024 International conference on optoelectronic Materials and devices, ICOMD 2024

作者： Yang, Wei Zuo, Chunlian Sun, Mingming Yang, Zhifeng Chongqing University of Science and Technology Chongqing404100 China Science and Technology on Vacuum Technology and Physics Laboratory Lanzhou730000 China Angang Group Yongtong Ductile Cast Iron Pipe Co. Ltd. Anyang455000 China

ISBN: (数字)9781510689046

ISBN: (纸本)9781510689039

The finite element method and the PIC-MCC method were employed to simulate and calculate the hot gap and etching rates of different regions within the ion optics system of the 30cm ion thruster, aiming to estimate its in-orbit service life. Upon reaching thermal equilibrium, it was observed that the decelerator grid exhibited a central depression characteristic in its overall deformation, while the accelerator grid displayed a uniform protrusion. Within a central area with a diameter ranging from 0 to 70 mm, there was an average decrease of 0.057 mm in the gap between the two grids. In an annular region with a diameter ranging from 70 to 140 mm, this average gap increased to 0.129 mm. Over a period of 1500 hours, The etching rate of the apertures located at the periphery of the decelerator grid was found to be as high as 6.25×10-14 kg/s;however, by 5700 hours, this rate had decreased by only15.4% compared to that at hour1500. At this time, the etching rates for apertures at both center and edge positions on the accelerator grid, and also for the central area of the decelerator grid, had decreased to 8.0%, 4.1%, and 3.6%. individually, in comparison with their respective rates at 1500 hours. The results obtained froma life time test conducted over 5700-hours indicated that etching of the central hole in the decelerator grid as well as the central and edge holes in the accelerator grid followed a basical linear trend. All simulation results compared to experimental data had an error within 10%. © 2025 SPIE.

关键词： Ion propulsion

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Fusion protein localization predicted by AlphaFold2 17

Fusion protein localization predicted by AlphaFold2

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17th International conference on Photonics and Imaging in Biology and Medicine, PIBM 2024

作者： Wu, Zipei Li, Changjiang Xiao, Zeyu Zhang, Xiaoying Song, Haiying Peng, Xiao Yan, Wei Qu, Junle College of Physics and Optoelectronic Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen518060 China Department of Electrical and Computer Engineering Boston University BostonMA02215 United States College of Pharmacy Shenzhen Technology University Shenzhen518118 China Department of Nephrology The First Affiliated Hospital of Shenzhen University Shenzhen Second People's Hospital Shenzhen518035 China Medical Engineering and Technology College Xinjiang Medical University Urumqi810017 China

ISBN: (数字)9781510688070

ISBN: (纸本)9781510688063

Currently, rapid and accurate prediction of targeting expression of a fluorescent protein tagged fusion protein remains a great challenge. Molecular docking simulation methods have been widely used to predict molecular binding targets in previous studies. However, these prediction methods rely on the existing protein structures and prior structural predictions, leading to an unsatisfied accuracy. Here, we combined Alphafold2 with molecular docking simulations to predict the targeting effect of fluorescent proteins EGFP or mCherry fused to cytoskeleton protein. The prediction results showed that the fusion of mCherry with β-actin did not affect its expression in the cytoskeleton. In contrast, the fusion of EGFP with β-actin inhibited its efficient participation in cytoskeleton formation. Subsequently, the corresponding β-actin-mCherry and β-actin-EGFP expression vectors were constructed and transfected into cells. The transfected cells were then observed under a confocal microscope. Imaging results showed that β-actin-mCherry participated in the construction of the cytoskeleton, while β-actin-EGFP dispersed in the cytoplasm. This work demonstrated a method to predict whether the fusion of fluorescent protein with a target protein will affect its original targeting function, providing a new approach to optimize the design of fusion proteins. © 2025 SPIE.

关键词： Molecular docking

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physics and simulation of optoelectronic devices xxxii

Physics and Simulation of Optoelectronic Devices XXXII

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physics and simulation of optoelectronic devices xxxii 2024

ISBN: (纸本)9781510670204

The proceedings contain 32 papers. The topics discussed include: modelling optical coherence tomography for biophotonics and photobiology using an electronically tunable mode-locked laser diode;electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes;optical constants of digital alloy InGaAs;electro-optical modulator using tunable III-V semiconductor in nanocavity;design and optimization of a high-speed ITO-plasmon-based asymmetric Mach-Zehnder interferometer modulator;design and study of fiber optic interferometric devices applied to vibration detection systems;Ge-on-Si single photon avalanche diode performance enhancement with photonic crystal nano-hole arrays;electromagnetically induced transparency-based optical gas sensor using plasmonic corrugated ring resonators;and tolerance analysis of local evanescent array coupled (LEAC) sensors fabricated in silicon photonics foundries.

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Unique Handedness of a circularly-polarized plane wave in simulation 32

Unique Handedness of a circularly-polarized plane wave in si...

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conference on physics and simulation of optoelectronic devices xxxii

作者： Sun, Guilin Ansys Canada 1700 1095 Pander St Vancouver BC V6E 2M6 Canada

ISBN: (纸本)9781510670211;9781510670204

While the circular polarization of electromagnetic waves is well known from its poplar definition, its handedness is not uniquely defined, even with given phase convention, observer location and phase difference. For example a circular polarization Ex+jEz (j=sqrt(-1)) traveling along y axis has opposite handedness of the polarization to Ex+jEy traveling in z axis, counter-intuitively. This cannot be explained by the conventional definition, due to the lack of clarity of the definition. In general, when there are two orthogonally linearly-polarized plane waves, say E1 and E2, choice of the reference wave to be E1 or E2 and application of the phase difference to the other wave are ambiguous. This causes confusions and sometimes contradictory results at least in simulations. This paper suggests the necessary and sufficient conditions with the help of the propagation vector and magnetic fields to define uniquely the handedness of a circular or elliptical polarization and thus a desired handedness can be correctly injected in a simulation. The newly proposed triad is added to the conventional definition for easy determining the handedness. The unique handedness of a circular polarization is critical in design, simulation, quantification of polarization-sensitive nanophotonics devices where wave can travel in 4 pi space along any arbitrary direction.

关键词： plane wave polarization linear polarization circular polarization handedness

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Accelerating simulations in inverse photonic design through factorization caching 32

Accelerating simulations in inverse photonic design through ...

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conference on physics and simulation of optoelectronic devices xxxii

作者： Dasdemir, Ahmet Onur Minden, Victor Magden, Emir Salih Koc Univ Dept Elect & Elect Engn TR-34450 Istanbul Turkiye Path AI 1325 Boylston St Suite 10000 Boston MA 02215 USA

ISBN: (纸本)9781510670211;9781510670204

As the demand for scalable and complex on-chip nanophotonic devices with multi-wavelength and multi-mode optical functionalities increases, fast and efficient design algorithms have become an essential tool in silicon photonics. Although inverse design coupled with adjoint optimization has emerged as a powerful method to design such devices by requiring only two simulations in each iteration of the optimization process, these simulations still make up the vast majority of the necessary computations, and render the design of complex devices with large footprints computationally infeasible. Here, we present a substantial speed-up in the finite-difference frequency-domain (FDFD) simulations by introducing a factorization caching approach, and significantly reduce the computational requirements for device optimization. Specifically, we cache the symbolic and numerical factorizations of system matrices corresponding to discretized Maxwell's equations, and re-use them throughout the entire optimization. Using this method, we reduce the majority of the computational operations in the FDFD simulations and drastically improve the simulation speeds. To demonstrate the resulting computational advantage compared to conventional FDFD methods, we show simulation speedups reaching as high as 8.5-fold in the design of broadband wavelength and mode multiplexers. These results present significant enhancements in the computational efficiency of inverse photonic design, and can greatly accelerate the use of machine-optimized devices in future photonic systems.

关键词： silicon photonics inverse design photonic simulation factorization caching

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Ge-on-Si single photon avalanche diode performance enhancement with photonic crystal nano-hole arrays 32

Ge-on-Si single photon avalanche diode performance enhanceme...

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conference on physics and simulation of optoelectronic devices xxxii

作者： McCarthy, Charlie Smith, Charlie Mowbray, Hannah Paul, Douglas J. Millar, Ross W. Univ Glasgow James Watt Sch Engn Glasgow G12 8LT Lanark Scotland

ISBN: (纸本)9781510670211;9781510670204

Germanium-on-silicon (Ge-on-Si) single photon avalanche diodes (SPADs) operating in the short-wave infrared (SWIR) have various applications such as long-range eye-safe LIDAR, quantum imaging, and quantum key distribution. These SPADs offer compatibility with Si foundries and potential cost advantages over existing InGaAs/InP devices. However, cooling is necessary to reduce dark-count rates (DCR), which limits photon absorption at 1550 nm wavelength. To address this, we propose integrating a photonic crystal (PC) nano-hole array structure on the Ge absorber layer. While this technique has shown enhanced responsivity in linear Ge detectors, its potential in Ge-on-Si SPADs remains unexplored. Our simulations consider temperature dependence and the impact of electric-field hot-spots on dark count rates. Through these simulations, we have identified means of enhancing single-photon detection efficiency (SPDE) without adversely affecting DCR. We predict significant improvements in performance, including at least a 2.5x enhancement in absorption efficiency.

关键词： Ge-on-Si SPAD Photonic Crystal Absorption Enhancement simulation

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Effects of resonances and surface texturing on light emission in emerging thin-film devices 32

Effects of resonances and surface texturing on light emissio...

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conference on physics and simulation of optoelectronic devices xxxii

作者： Kivisaari, Pyry Partanen, Mikko Oksanen, Jani Aalto Univ Engineered Nanosyst Grp POB 13500 FI-00076 Aalto Finland Aalto Univ Dept Elect & Nanoengn POB 13500 FI-00076 Aalto Finland

ISBN: (纸本)9781510670211;9781510670204

Recent developments in thin-film fabrication and processing open up interesting possibilities for both established and emerging optics technologies. There, one of the key questions requiring more complete understanding is by how much one can improve the performance of thin-film devices by utilizing resonance effects and surface texturation. In this work, we report on our recent theoretical investigations around two aspects of this question: (1) how much the overall (=angle and energy-integrated) emission of extremely thin (similar to 10 nm) layers can be enhanced through cavity effects, and (2) how much resonances affect the emission of moderately thin (> 100 nm) layers in a typical device interacting with free space (in this case an ultra-thin solar cell). Beginning with topic (1), we find that the total emission of active layers with thicknesses < 50 nm in particular can be boosted through resonant effects by placing them in a cavity. For topic (2), the results indicate that a radiative transfer approach (i.e., one not accounting for resonant effects) can give even quantitatively accurate predictions of the total emission of moderately thin layers in a thin-film device, as long as the reflectances of the device's outer boundaries are known, and the emitting layer is not very close to optical elements supporting direct evanescent coupling (such as metal mirrors). Finally, we demonstrate that extending the self-consistent radiative transfer-drift-diffusion approach for diffusive scattering presents an interesting tool to optimize thin-film devices even with textured surfaces.

关键词： Gallium arsenide simulations Solar cells Indium gallium phosphide Scattering Mirrors Thin film devices Light scattering Specular reflections

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