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IEEE International conference on Electron Devices and solid-state Circuits (EDSSC)

作者： Luo, Yi Guo, Nan Mirabbasi, Shahriar Ho, Derek Univ British Columbia Dept Elect & Comp Engn Vancouver BC Canada City Univ Hong Kong Dept Phys & Mat Sci Hong Kong Hong Kong Peoples R China

ISBN: (纸本)9781509018307

Computational imaging has recently attracted much attention due to its excellent potential in delivering advanced capabilities such as motion deblurring and high-speed compressive sensing. However, the development of computational cameras has been limited by the lack of a technology that can efficiently support temporal encoding. Conventionally, temporal encoding is performed by complicated off-chip optics such as split light modulators (SLMs). This results in camera systems with large physical sizes, performance degradation, and high power consumption. In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) pixel design that performs temporal optical binary encoding for on-chip, high-speed computational imaging applications. Compared to conventional high-speed imaging techniques, the proposed CMOS computational pixel is a promising approach for on-chip temporal encoding, enabling simpler camera optics and reduced power consumption.

关键词： Computational imaging temporal binary encoding coded Exposure CTIA pixel CMOS image sensor

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Type-II Superlattice Infrared Detector Technology at Fraunhofer IAF 42

Type-II Superlattice Infrared Detector Technology at Fraunho...

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42 conference on Infrared Technology and applications XLII

作者： Rehm, Robert Daumer, Volker Hugger, Tsvetelina Kohn, Norbert Luppold, Wolfgang Mueller, Raphael Niemasz, Jasmin Schmidt, Johannes Rutz, Frank Stadelmann, Tim Wauro, Matthias Woerl, Andreas Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510600607

For more than two decades, Antimony-based type-II superlattice photodetectors for the infrared spectral range between 3-15 mu m are under development at the Fraunhofer Institute for Applied solid state Physics (IAF). Today, Fraunhofer IAF is Germany's only national foundry for InAs/GaSb type-II superlattice detectors and we cover a wide range of aspects from basic materials research to small series production in this field. We develop single-element photodetectors for sensing systems as well as two-dimensional detector arrays for high-performance imaging and threat warning systems in the mid-wavelength and long-wavelength region of the thermal infrared. We continuously enhance our production capabilities by extending our in-line process control facilities. As a recent example, we present a semiautomatic wafer probe station that has developed into an important tool for electrooptical characterization. A large amount of the basic materials research focuses on the reduction of the dark current by the development of bandgap engineered device designs on the basis of heterojunction concepts. Recently, we have successfully demonstrated Europe's first LWIR InAs/GaSb type-II superlattice imager with 640x512 pixels with 15 mu m pitch. The demonstrator camera already delivers a good image quality and achieves a thermal resolution better than 30 mK.

关键词： InAs/GaSb type-II superlattice photodetector T2SL MWIR LWIR

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state-of-the-Art MCT Photodiodes for Cutting-Edge sensor applications by AIM 43

State-of-the-Art MCT Photodiodes for Cutting-Edge Sensor App...

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conference on Infrared Technology and applications XLIII

作者： Figgemeier, H. Hanna, S. Eich, D. Fries, P. Mahlein, K. -M. Wenisch, J. Schirmacher, W. Beetz, J. Breiter, R. AIM INFRAROT MODULE GmbH Theresienstr 2 D-74072 Heilbronn Germany

ISBN: (纸本)9781510608559;9781510608566

For about 30 years, AIM has been ranking among the leading global suppliers for high-performance MCT infrared detectors, with its portfolio spanning the photosensitivity cut-off range from the SWIR to the VLWIR and from 1st generation to 3rd generation FPA devices. To meet the market demands for SWaP-C- and IR-detectors with additional functionalities such as multicolor detection, AIM employs both LPE and MBE technology. From AIM's line of highest-performance single color detectors fabricated by LPE, we will present our latest excellent results of 5.3 mu m cut-off MWIR MCT detectors with 1024x768 pixels and a 10 mu m pixel pitch. AIM's powerful low dark current LWIR and VLWIR p-on-n device technology on LPE-grown MCT has now been extended to the MWIR spectral range. A comparison of results from n-on-p and p-on-n MWIR MCT planar photodiode arrays is presented. Operating temperatures of 160 K and higher, in conjunction with low defect density and excellent thermal sensitivity (NETD) are attained. The results achieved for LPE MWIR are compared to MBE MWIR data. For both the cost-efficient production of MWIR single color MCT detectors, as well as 3rd generation multicolor MCT detectors, AIM makes use of MBE growth of MCT on large-area GaAs substrates. The now-available AIM MWIR single color MBE MCT detectors grown on GaAs are qualified, delivered, and have reached a maturity fully meeting customers' requirements. Representing AIM's multicolor detector development, latest test results on a 640x512 pixels with a 20 mu m pitch design will be presented. The MWIR/MWIR diodes demonstrate high QE, very low color cross talk, and excellent NETD in conjunction with low defect densities.

关键词： FPA MCT SWaP HOT MULTICOLOR MWIR

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development of Ultra-Fast Silicon Detectors for 4D tracking

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JOURNAL OF INSTRUMENTATION 2017年第12期12卷 C12012-C12012页

作者： Staiano, A. Arcidiacono, R. Boscardin, M. Betta, G. F. Dalla Cartiglia, N. Cenna, F. Ferrero, M. Ficorella, F. Mandurrino, M. Obertino, M. Pancheri, L. Paternoster, G. Sola, V. Ist Nazl Fis Nucl Sez Torino Via P Giuria 1 Turin Italy Univ Trento Dipartimento Fis Via Sommarive 14 Povo Trent Italy Fdn Bruno Kessler Ctr Mat & Microsyst Via Sommarive 18 Povo Trent Italy Univ Turin Dipartimento Fis Via P Giuria 1 Turin Italy Univ Piemonte Orientale Dipartimento Sci Farmaceut Largo Donegani 2-3 Novara Italy

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of similar to 10 ps and similar to 10 mu m with a 50 mu m thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor similar to 10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 mu m thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

关键词： Charge transport and multiplication in solid media Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) Particle tracking detectors (solid-state detectors) Radiation-hard detectors

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Combining nanoimprint lithography with dynamic templating for the fabrication of dense, large-area nanoparticle arrays

Combining nanoimprint lithography with dynamic templating fo...

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作者： Golze, Spencer D. Temple University

学位级别：M.S.

The study of nanomaterials is a developing science with potentially large benefits in the development of catalysts, optical and chemical sensors, and solid state memory devices. As several of these devices require large arrays of nanoparticles, one of the greatest obstacles in material characterization and device development is the reliable manufacture of nanopatterns over a large surface area. In addition, various applications require different nanoparticle size and density. High density arrays with small nanoparticle sizes are difficult to achieve over a large surface area using current manufacturing processes. Herein, Nanoimprint Lithography (NIL) and Dynamic Templating are combined to create a new manufacturing process capable of developing high density arrays with small nanoparticle sizes. The NIL process involves the stamping of a polymer coated substrate by a silicon stamp with patterned nanofeatures. The stamp is then removed, leaving the pattern in the polymer, which is first etched and then coated with a thin layer of metal, filling the recessed regions of the pattern. The excess polymer is dissolved, leaving a pattern of nanoparticles on the substrate matching the pattern on the stamp. When Dynamic Templating is applied, a very thin layer of metal can be coated, which forms small nanoparticle sizes when dewetted. A custom NIL system has been developed to combine these two processes together, which has now proven to yield consistent large-area, dense arrays with a small nanoparticle size. An array spacing of 700 nm has been achieved, along with a nanoparticle size of 90 nm. arrays have been created in gold and palladium, where there is now the potential to combine them with other solution-based syntheses which should lead to complex nanoparticle geometries suitable for sensor applications.

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Sub-electron read noise and millisecond full-frame readout with the near infrared eAPD array SAPHIRA 5

Sub-electron read noise and millisecond full-frame readout w...

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conference on Adaptive Optics Systems V

作者： Finger, Gert Baker, Ian Alvarez, Domingo Dupuy, Christophe Ives, Derek Mehrgan, Leander Meyer, Manfred Stegmeier, Joerg Weller, Harald J. European Southern Observ Karl Schwarzschildstr 2 D-85748 Garching Germany Leonardo Southampton SO15 0LG Hants England

ISBN: (纸本)9781510601987

In 2007 ESO started a program at SELEX (now LEONARDO) to develop noiseless near infrared HgCdTe electron avalanche photodiode arrays (eAPD)[1][2][3]. This eAPD technology is only way to overcome the limiting CMOS noise barrier of near infrared sensors used for wavefront sensing and fringe tracking. After several development cycles of solid state engineering techniques which can be easily applied to the chosen growth technology of metal organic vapour phase epitaxy (MOVPE), the eAPD arrays have matured and resulted in the SAPHIRA arrays. They have a format of 320x256 pixels with a pitch of 24 mu m. They now offer an unmatched combination of sub-electron read noise at millisecond frame readout rates. The first generation of SAPHIRA arrays were only sensitive in H and K-band. With the removal of a wide bandgap buffer layer the arrays are now sensitive from lambda=0.8 mu m to 2.5 mu m with high quantum efficiency over the entire wavelength range. The high temperature anneal applied during the growth process produces material with superb cosmetic quality at an APD gain of over 600. The design of the SAPHIRA ROIC has also been revised and the new ME1000 ROIC has an optimized analogue chain and more flexible readout modes. The clock for the vertical shift register is now under external control. The advantage of this is that correlated-double-sampling and uncorrelated readout in the rolling shutter mode now have a duty cycle of 100% at the maximum frame rate. Furthermore, to reduce the readout noise rows can be read several times before and after row reset. Since the APD gain is sufficiently high that one photon produces many more electrons than the square root of kTC which is the charge uncertainty after reset, signals of one photon per exposure can be easily detected without the need for double correlated sampling. First results obtained with the fringe tracker in GRAVITY and the four SAPHIRA wavefront sensors installed in the CIAO adaptive optics systems of the four 8 me

关键词： avalanche photodiode eAPD HgCdTe readout noise excess noise APD gain cryogenic amplifier infrared wavefront sensor fringe tracker

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Process control of MOCVD growth for LEDs by in-situ Photoluminescence 20

Process control of MOCVD growth for LEDs by in-situ Photolum...

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conference on Light-Emitting Diodes - Materials, Devices, and applications for solid state Lighting XX

作者： Prall, C. Haberland, K. Kaspari, C. Brunner, F. Weyers, M. Rueter, D. Univ Appl Sci Ruhr West Inst Measurement Engn & Sensor Technol POB 10 07 55 D-45407 Mulheim Germany LayTec AG Seesener Str 10-13 D-10709 Berlin Germany Leibniz Inst Hoechstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany

ISBN: (纸本)9781510600034

development and manufacturing of LED structures is still driven by production cost reduction and performance improvements. Therefore, in-situ monitoring during the epitaxial process plays a key role in view of further yield improvement and process optimization. With the continuing trend towards larger wafers, stronger bow and increased aspherical curvature are additional challenges the growers have to face, leading to non-uniform LED-emission. Compared to traditional in-situ metrology like curvature measurement and near UV pyrometry, in-situ photoluminescence measurements can provide a more direct access to the quantum well emission already during growth. In this paper we show how in-situ photoluminescence measurements can be used in a production type multi-wafer MOCVD system to characterize the quantum well emission already during growth. We also demonstrate how deviations from the desired wavelength can be detected and corrected in the same growth run. Since the method is providing spatially resolved line-scans across the wafer, also the uniformity of the emission wavelength can be characterized already during growth. Comparison of in-situ and ex-situ photoluminescence data show excellent agreement with respect to wavelength uniformity on 4 inch wafers.

关键词： characterization metal organic chemical vapor deposition light-emitting diodes photoluminescence

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Liquid Crystal Uncooled Thermal Imager development 6

Liquid Crystal Uncooled Thermal Imager Development

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conference on Infrared sensors, Devices, and applications VI

作者： Clark, H. R., Jr. Bozler, C. O. Berry, S. R. Reich, R. K. Bos, P. J. Finnemeyer, V. A. Bryant, D. R. McGinty, C. MIT Lincoln Lab 244 Wood St Lexington MA 02420 USA Kent State Univ Inst Liquid Crystal 1425 Univ Esplanade Kent OH 44242 USA

ISBN: (数字)9781510603400

ISBN: (纸本)9781510603394;9781510603400

An uncooled thermal imager is being developed based on a liquid crystal (LC) transducer. Without any electrical connections, the LC transducer pixels change the long-wavelength infrared (LWIR) scene directly into a visible image as opposed to an electric signal in microbolometers. The objectives are to develop an imager technology scalable to large formats (tens of megapixels) while maintaining or improving the noise equivalent temperature difference (NETD) compared to microbolometers. The present work is demonstrating that the LCs have the required performance (sensitivity, dynamic range, speed, etc.) to enable a more flexible uncooled imager. Utilizing 200-mm wafers, a process has been developed and arrays have been fabricated using aligned LCs confined in 20x20-mu m cavities elevated on thermal legs. Detectors have been successfully fabricated on both silicon and fused silica wafers using less than 10 photolithographic mask steps. A breadboard camera system has been assembled to test the imagers. Various sensor configurations are described along with advantages and disadvantages of component arrangements.

关键词： thermal imager liquid crystals uncooled imagers long-wavelength infrared microbolometers optical readout

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6.3 105×65mm2 391Mpixel CMOS image sensor with >78dB dynamic range for airborne mapping applications

6.3 105×65mm2 391Mpixel CMOS image sensor with >78dB dynami...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： Jan Bogaerts Raf Lafaille Marc Borremans Jia Guo Bart Ceulemans Guy Meynants Navid Sarhangnejad Gavril Arsinte Victor statescu Sonja van der Groen CMOSIS NV Antwerp Belgium

In today's airborne mapping applications, there is a strong push towards higher-resolution sensors for high-end digital systems. This large-format sensor development aims to reduce the data acquisition (flight) time and cost, leading to higher productivity for the end-user. Due to the increased sensor resolution, these new systems allow higher flight altitude for the same ground sampling distance (GSD), thereby covering substantially larger swath width (distance covered across track during flight). Alternatively, at similar altitude, the system will deliver higher ground resolution. The described sensor exceeds the highest pixel count of sensors used for aerial mapping applications reported in a recent survey paper [1].

关键词： Electronics packaging Dynamic range Radiation detectors Image sensors Random access memory Charge coupled devices

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Reconfigurable 96×128 active pixel sensor with 2.1µW/mm2 power generation and regulated multi-domain power delivery for self-powered imaging

Reconfigurable 96×128 active pixel sensor with 2.1µW/mm2 p...

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European conference on solid-state Circuits (ESSCIRC)

作者： Khondker Zakir Ahmed Mohammad Faisal Amir Jong Hwan Ko Saibal Mukhopadhyay School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA

We present an energy harvesting system comprising a dual purpose CMOS active pixel sensor (APS) array, and a combined energy extractor and multi domain voltage regulator on a single die in 130nm technology. The reconfigurable image sensor is a 128 × 96 pixel array. The array captures image and is reconfigured to form an on-chip photovoltaic cell to harvest energy. It generates 2.1μW peak power at 300mV with 200klux illuminance. The generated voltage is used as the input of the switching energy extractor that boosts the voltage up to 3.3V and stores the energy in the storage element (battery/super capacitor). The stored energy is then supplied to the load at three independent domains using the single inductor multi-output (SIMO) buck regulator. Both the SIMO buck and the energy-harvesting boost use the only inductor in the system through internally managed time-multiplexing mechanism. This prototype demonstrates a solution for low frame rate, energy autonomous imaging applications including distributed wireless sensor node and IoT electronics.

关键词： Energy harvesting Regulators Imaging Inductors Voltage control sensor arrays

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