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22nd International conference on solid-state sensors, Actuators and Microsystems, Transducers 2023

作者： Pan, Hemin Mei, Deqing Wang, Yancheng Zhejiang University State Key Laboratory Of Fluid Power And Mechatronic Systems School Of Mechanical Engineering Hangzhou China Zhejiang University Key Laboratory Of Advanced Manufacturing Technology Of Zhejiang Province School Of Mechanical Engineering Hangzhou China

ISBN: (纸本)9784886864352

This paper presents a novel particle multimer manipulation approach by using acoustic tweezers with optimized bisymmetric coherent design. The acoustic tweezers enable contactless morphology modulation of individual multimers and patterning arrays by regulating the shapes of acoustic field to the desired distributions with high accuracy. Rapid switching of multimer patterning arrays and morphology modulation of individual multimers with totally eleven patterns (hexamers) can be achieved by real-time regulating the frequency, amplitude, and phase relationships of signals input to interdigital transducers (IDTs). Therefore, this technique can be applied to reversible assembly and dynamic manipulation of particles and/or cells in biomedical applications. © 2023 IEEJ.

关键词： Acoustic tweezers Morphology modulation Particle manipulation Reconfigurable assembly Surface acoustic wave

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Live Demonstration: Real-Time and High-Speed Ion Imaging Using CMOS ISFET arrays

Live Demonstration: Real-Time and High-Speed Ion Imaging Usi...

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IEEE Biomedical Circuits and Systems conference (IEEE BioCAS)

作者： Kuang, Lei Zeng, Junming Georgiou, Pantelis Imperial Coll London Ctr Bioinspired Technol Inst Biomed Engn London SW7 2AZ England Imperial Coll London Dept Elect & Elect Engn London SW7 2AZ England

ISBN: (纸本)9781728172040

In this work, a complete Lab-on-chip platform for ion-imaging applications using CMOS ISFET arrays is demonstrated. The platform consists of a front-end chip that integrates 128 x 128 Ion-Sensitive Field Effect Transistors (ISFETs) fabricated in standard CMOS 180nm process, a PCB bench for power management and signal pipeline, a dedicated high-speed data processing system that employs DDR4 SDRAMs on the FPGA development board with a FIFO-to-USB3.0 bridge for data dumping, and an user interface for tuning and monitoring of the 3-D array images. Inspired by CMOS imagers, we present an end-to-end solution for delivering high-frequency ion images either at 1000 fps in real time or in slow-motion replay, for analysing novel ion interactions with the aid of data processing algorithms.

关键词： Array signal processing User interfaces Ions Data processing Real-time systems arrays SDRAM

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Stripe geometry light emitting diodes over pulsed lateral epitaxial overgrown GaN for solid state white lighting

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PHYSICA STATUS solidI A-APPLIED RESEARCH 2001年第1期188卷 147-150页

作者： Shatalov, M Chitnis, A Basak, D Yang, JW Fareed, Q Simin, G Khan, MA Gaska, R Shur, MS Univ S Carolina Dept Elect Engn Columbia SC 29208 USA Sensor Elect Technol Inc Latham NY 12110 USA

The stripe geometry InGaN/GaN and InGaN/AlInGaN multiple quantum well light emitting diodes (LEDs) were fabricated using pulsed lateral epitaxial overgrowth and conventional GaN layers over sapphire. Material quality improvement due to overgrowth of GaN layer results in. enhanced LED output power for broad area square geometry devices emitting at 430 rim. Using of stripe geometry edge emitting LEDs allows considerable reducing of the device differential resistance and improving of the output power density. The Power enhancement and case of thermal management makes the arrays of stripe geometry LEDs to be promising for high power applications.

关键词： 78.60.Fi 81.05.Ea S7.14

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solid state imaging system

Solid state imaging system

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Meeting of 12th IEEE -- East Coast conference on Aerospace and Navigational Electronics

作者： Broderick, J.C. Schuster, M.A.

development of solid-state camera system consisting of monolithic 50×50 phototransistor mosaic sensor and molecular digital readout for aerospace applications;design details for several molecular subsystems are discussed;operation of readout circuit, incorporating video preamplifier, commutating switches, and logic circuitry.

关键词： Photogrammetry

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MSN: Battery-Less Multiple Subcarrier Multiple Access sensor Node with Full-Duplex Backscatter Concurrent Data Streaming 19

MSN: Battery-Less Multiple Subcarrier Multiple Access Sensor...

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19th IEEE Asian solid-state Circuits conference, A-SSCC 2023

作者： Zhao, Yuxiao Wang, Hanyang Xu, Yongming Ying, Zhongyuan Lu, Yu Liu, Jinlin Hu, Tuo Mitsugi, Jin Min, Hao Fudan University Shanghai China Quanray Electronics Shanghai China Keio University Fujisawa Japan

ISBN: (纸本)9798350330038

To scale to trillions of Internet-of-Things (loT) nodes, devices must be battery-less by achieving energy autonomy, having a μW power floor, few off-chip components, and a small form factor. These features are beneficial for short-range high-density loT applications such as structural health monitoring (SHM) for wings and gears, human motion capture (HMC), and air conditioning system monitoring. This work focuses on the synchronous transmission of sensor data streams, called concurrent data streaming, from multiple sensor nodes for multi-points sensing. Traditional wireless communication protocols need construct wireless networks for time synchronization, increasing system complexity [1]. However, the recent development of Multiple Subcarrier Multiple Access (MSMA), enables concurrent backscatter communication by assigning multiple uplink subcarrier (USC) channels to sensor nodes [2]-[4]. To expand the deployment in the mentioned loT applications, MSMA should be compatible with existing communication protocols and achieve real-time control of starting and stopping of concurrent data streaming without wasting extra sensing system energy. To avoid channel interference among multiple nodes and catastrophic failure of concurrent data transmission, the USC frequency must always keep stable from the influence of PVT. © 2023 IEEE.

关键词： sensor nodes

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Evolution of epitaxial titanium silicide nanocrystals as a function of growth method and annealing treatments

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APPLIED SURFACE SCIENCE 2006年第15期252卷 5355-5360页

作者： Goldfarb, I. Grossman, S. Cohen-Taguri, G. Tel Aviv Univ Fac Engn Dept Solid Mech Mat & Syst IL-69978 Tel Aviv Israel Tel Aviv Univ Univ Res Inst Nanosci & Nanotechnol IL-69978 Tel Aviv Israel

Titanium silicide grows on silicon in a form of discontinuous layers, which is the most serious obstacle to the formation of high-quality epilayers for VLSI applications. At the same time, nanometric dimensions of the epitaxial silicide islands attract interest as quantum nanostructures. However, for this purpose, nanocrystals in a self-assembled array have to be defect-free, and exhibit high shape and size uniformity. In this work titanium silicide was grown on Si(1 1 1) substrates by reactive deposition epitaxy and by solid-phase epitaxy. Since the reaction and phase-formation kinetics depend on the growth method, accordingly different lattice matching and facet energies may result in different morphological shapes of the nanocrystals. Nanocrystals from reaction in a solid-state could be characterized as highly non-uniform in both shape and size, and their evolution due to post-deposition anneals increased that non-uniformity even further. Relaxation of epitaxial mismatch strain by misfit dislocations could be inferred from a gradual reduction of the nanocrystal vertical aspect ratio and development of flat top facets out of the initially sharp conical crests, in accord with generalized Wulf-Kaishew theorem. On the other hand, the silicide nanocrystals formed by reactive deposition exhibited high uniformity and thermal stability. Significant strain relaxation, as could be judged by the nanocrystal flattening, took place only at temperatures in excess of 650 degrees C, followed by progressive nanocrystal coalescence. It thus could be inferred, that better titanium silicide nanocrystal arrays (in the sense of uniformity and stability) are more easily obtained by reactive deposition epitaxy than by solid-phase epitaxy. While terminal, stable C54-TiSi2 phase, did eventually form in the epilayers in both methods, different evolution pathways were manifested by different respective morphologies and orientations even in this final state. (c) 2005 Elsevier B.V. All rights

关键词： vapor-phase epitaxy self-assembled nanostructures silicides scanning tunneling microscopy

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development of a wireless environmental sensor system and MEMS-based RF circuit components

Development of a wireless environmental sensor system and ME...

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13th International conference on solid-state sensors and Actuators and Microsystems, TRANSDUCERS '05

作者： Yoon, Euisik Yun, Kwang-Seok 373-1 Guseong-dong Yuseong-gu Daejeon 305-701 Korea Republic of

ISBN: (纸本)0780389948

This paper reports a miniaturized environmental sensor system integrated with RF communication module. This system has been developed for on-site monitoring of water pollution by heavy metal ions. The system is composed of an electrochemical sensor, a custom potentiostat module, and an RF module for wireless communication. Also, we present monolithic MEMS VCOs integrated with high-Q MEMS inductors and MEMS transmission lines for low-power wireless transceiver applications. Phase noise of the proposed MEMS VCOs has been improved by more than 7 dBc/Hz compared with their CMOS counterparts at 1MHz offset from center frequencies of 5GHz and 13 GHz, respectively. © 2005 IEEE.

关键词： Electrochemical sensors

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A 1/3-inch 1.3Mpixel single-layer electrode CCD with a high-frame-rate skip mode

A 1/3-inch 1.3Mpixel single-layer electrode CCD with a high-...

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2000 IEEE International solid-state Circuits conference 47th Annual ISSCC

作者： Hatano, K. Furumiya, M. Murakami, I. Kawasaki, T. Ogawa, C. Nakashiba, Y. ULSI Device Development Laboratory NEC Corp. Sagamihara Kanagawa Japan

A 1/3-inch 1.3Mpixel interline-transfer charge-coupled-device (CCD) image sensor was described for digital camera applications. The vertical CCD (V-CCD) of the image sensor was provided with ten-phase metal wiring to enable various charge-transfer modes. The inter-electrode gaps were filled with a boro-phosphorous-silicate-glass film that flows easily when heated to obtain a planar surface and easy fabrication of the metallic light-shielding film and peripheral circuit wiring. The system features automatic focusing and setting of the aperture in color viewfinders for digital cameras.

关键词： Image sensors

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Array of X and gamma ray scintillator detector for space gamma ray telescope application

Array of X and gamma ray scintillator detector for space gam...

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IEEE Nuclear Science Symposium/Medical Imaging conference

作者： Labanti, Claudio Marisaldi, Martino Fuschino, Fabio Bastia, Paolo Negri, Barbara Perotti, Francesco Soltau, Heike INAF IASF Dept Bologna Italy Thales Alenia Space Milano Milan Italy Agenzia Spaziale Italiana Rome Italy INAF IASF Dept Milan Italy PN Sensor Munche Germany Germany

ISBN: (纸本)9781424427147

A The instruments on board the latest gamma observatories (INTEGRAL, AGILE, GLAST) combines technologies based either on solid state or on scintillator detector, the first one being favorite when a low energy threshold and a good energy resolution is required, the latter being more convenient for large volume when worse performance are still acceptable. With the development of new scintillator materials and even more with new low-noise ligth readout devices the differences between the two techniques are narrowing and for some application the cheaper scintillator detector can compete with solid state devices. Furthermore both these detector concepts can be combined in a single compact device by means of the Pulse Shape Discrimination (PSD) technique that allows to discriminate direct interactions in silicon from scintillation events. Combined in arrays they can be the base for position senstive planes to be combined with coded mask in imaging instruments or the component of new generation Compton based telescopes. For this purpose two prototype systems have been designed and realized, both based on a 20 channels Silicon Drift Detectors (SDD) monolithic array coupled to individual 1 cm thick CsI(TI) scintillator crystals. In the first system the detector readout is implemented with ASICs tailored specifically to the SDD readout, while in the second system the PSD readout of the array is implemented. The performance of these kind of detectors tested in the various prototypes as well as their applications in new generation space telescopes are discussed.

关键词： Cesium iodide

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A 32×32 SPAD LiDAR sensor with In-pixel Spatial-temporal Coincidence and Per-SPAD Pulse Delay for Resolution-lossless Imaging

A 32×32 SPAD LiDAR Sensor with In-pixel Spatial-temporal Co...

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2024 IEEE Asian solid-state Circuits conference, A-SSCC 2024

作者： Chen, Bu Huang, Zhangcheng Wang, Jingyi Shang, Hongyang Lv, Hankun Liu, Qi Liu, Ming State Key Lab of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University China

ISBN: (纸本)9798350376326

Single-photon Avalanche Diode (SPAD)-based LiDAR technology finds significant applications in advanced driver assistance systems, etc. Extracting distance information necessitates creating a histogram from enormous frames to filter out the overwhelming background light (BGL) data. As the formats of SPAD pixel arrays scaling up [1], the processing, storage, and transmission of extensive data result in ultra-high power consumption and increased layout area. In order to reduce BGL, previous studies [2][3] [4] have leveraged spatial coincidence and histograms in pixels, and [5] utilized external double pulses to enhance the signal-to-noise ratio. However, a significant amount of data still needs to be processed within the sensor. To address these challenges, this paper presents a 32 × 32 SPAD LiDAR sensor that incorporates in-pixel spatial-temporal coincidence to effectively compress random background light and a per-SPAD pulse delay method to realize resolution-lossless imaging. This approach achieves an impressive 98.3% compression rate of background light under 100 klux illumination while maintaining a low power consumption of 14.6 μW per pixel. © 2024 IEEE.

关键词： Advanced driver assistance systems

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