Advances in silicon micromachining have lead to development of sophisticated neural interfaces such as the Utah Slant Electrode Array (USEA). The unique architecture of the USEA comprises of electrodes which increase ...
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This paper describes the methodology, which is used in IMEC for the realization of very high resolution linear image sensors. The key elements in design and processing are the use of the DEPLI-sensor principle, a quad...
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In this paper we report the development of n-type and p-type Si-microprobe arrays fabricated by using in situ doping in vapor-liquid-solid, (VLS) growth employing a gas-source molecular beam epitaxy (GS-MBE) system as...
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In this paper we report the development of n-type and p-type Si-microprobe arrays fabricated by using in situ doping in vapor-liquid-solid, (VLS) growth employing a gas-source molecular beam epitaxy (GS-MBE) system as the growth environment. VLS growth using Si2H6 only gives intrinsic Si microprobes with the resistivity of similar to 10(4) Omega-cm, which decreases to similar to 10-(2) Omega-cm after phosphorous diffusion at 1100 degrees C. However, by incorporating in situ doping into the VLS growth method, more conductive probes (resistivity similar to 10(-3) Omega-cm) can be realized at a temperature less than 700 degrees C. The site and diameter of the VLS-grown probe can be controlled and the growth rate is higher than that of a poly-Si or epitaxial Si crystal grown by the vapor-solid (VS) method. Due to the low processing temperature, in situ doping is effective for realizing highly conductive probe arrays with smart sensor devices by a standard IC process followed by VLS growth. The wide range of doping leads to the possibility of using these probes for the fabrication of vertical active devices such as diodes and transistors.
Recent years have witnessed the rapid proliferation of backscatter technologies that realize the ubiquitous and long-term connectivity to empower smart cities and smart homes. Localizing such backscatter tags is cruci...
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Recent years have witnessed the rapid proliferation of backscatter technologies that realize the ubiquitous and long-term connectivity to empower smart cities and smart homes. Localizing such backscatter tags is crucial for IoT-based smart applications. However, current backscatter localization systems require prior knowledge of the site, either a map or landmarks with known positions, which is laborious for deployment. To empower universal localization service, this paper presents Rover, an indoor localization system that localizes multiple backscatter tags without any start-up cost using a robot equipped with inertial sensors. Rover runs in a joint optimization framework, fusing measurements from backscattered WiFi signals and inertial sensors to simultaneously estimate the locations of both the robot and the connected tags. Our design addresses practical issues including interference among multiple tags, real-time processing, as well as the data marginalization problem in dealing with degenerated motions. We prototype Rover using off-the-shelf WiFi chips and customized backscatter tags. Our experiments show that Rover achieves localization accuracies of 39.3 cm for the robot and 74.6 cm for the tags.
This paper presents a charge compensated phototransistor for a high dynamic range linear-logarithmic CMOS image sensor. The pixel is based on the four-transistor active pixel structure which can automatically switch b...
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ISBN:
(纸本)9781538665510
This paper presents a charge compensated phototransistor for a high dynamic range linear-logarithmic CMOS image sensor. The pixel is based on the four-transistor active pixel structure which can automatically switch between the linear mode and logarithmic mode according to the incident light intensity. This paper also proposes a fixed pattern noise (FPN) correction technique for the proposed pixel sensor. The FPN caused by the threshold voltage variation of the transfer gate is corrected by the calibration method of two-step charge transfer. The prototype sensor consisting of a 160 x 200 pixel array with the pixel pitch of 8 x 8 mu m(2) is fabricated with a 0.18 gm 1P6M standard CMOS process. It is found that the dynamic range is achieved 169 dB and the FPN is reduced by 80%.
Microfluidic optomechanical device are a unique optofluidics platform that can exhibit optomechanical oscillation in the 10-20 MHz, driven by radiation pressure (RP). The resonant enhancement of both mechanical and op...
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ISBN:
(数字)9781510646520
ISBN:
(纸本)9781510646520;9781510646513
Microfluidic optomechanical device are a unique optofluidics platform that can exhibit optomechanical oscillation in the 10-20 MHz, driven by radiation pressure (RP). The resonant enhancement of both mechanical and optical response in microcavity optomechanical devices allows exquisitely sensitive measurements of environment stimuli (pressure, force, sound speed change) and non-solidstates of matter (freely flowing particles, viscous fluids). In this work, we experimentally investigate temperature tuning of these hollow-shell oscillators. We also demonstrate the effect of temperature on the frequency domain of optical machine oscillation resonance shift and applied it to the field of temperature sensing. Our result is a step towards optomechanical sensor in the field of temperature.
The growing new field of cell microarrays enables new biomedical assays. We present a unique parallel cell printing technique, which allows the fast production of living cell microarrays. A 24 nozzle printhead was use...
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The author reports the development of a new type of contact sensor for the measurement of fine surface features and textures down to the micron level. The sensor has a complicated rubber covering and is inexpensive an...
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ISBN:
(纸本)0879425857
The author reports the development of a new type of contact sensor for the measurement of fine surface features and textures down to the micron level. The sensor has a complicated rubber covering and is inexpensive and robust. As it is stroked across the surface of interest, piezoelectric transducers embedded in the sensor surface respond to stress induced by surface features. The sensor uses a current amplifier in place of the traditional charge amplifier, which eliminates many of the problems associated with piezoelectric transducers. The resulting signal is proportional to the rate of change of stress, or the stress rate. The signal can be interpreted with the aid of a solid mechanics model of the contact interaction and a linear deconvolution filter. The ability to detect features as small as a few micrometers has been experimentally confirmed. Intended applications include perception of surface properties to improve the robustness of robotic manipulation and rapid evaluation of surface finish in manufacturing.
In this work, we present the development of a reliable capacitive tactile sensing array by using simple fabrication processes. The sensing array, which consists of a micromachined PDMS structure and a flexible printed...
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Ferraris metering elements were widely applicable to the whole range of prevailing market needs, whether for simple single-rate domestic devices or for the most complex polyphase devices with capabilities for reactive...
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Ferraris metering elements were widely applicable to the whole range of prevailing market needs, whether for simple single-rate domestic devices or for the most complex polyphase devices with capabilities for reactive energy measurement and impulsing outputs. Until recently, no solid-state technology was able to offer the same universal flexibility, but a breakthrough in the development of a Hall-effect based transducer has changed the picture completely. The new technology is known as Vertical Hall and it overcomes the hitherto practical difficulties, namely temperature, linearity and offset problems, which have excluded it from metering applications in the past. As is described these new Vertical Hall based devices show exceptional performance.
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