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IEEE International conference of Electron Devices and solid-state Circuits (EDSSC)

作者： Ray, Prasenjit Seena, V. Rao, V. Ramgopal Indian Inst Technol Dept Elect Engn Ctr Excellence Nanoelect Bombay Maharashtra India

ISBN: (纸本)9781467325233

This work focusses on the development of a ZnO based piezo-resistive polymer cantilever sensor platform. Two different approaches have been taken, one based on AI-doped ZnO transistor (TFT) embedded in a polymeric micro-cantilever and another with a ZnO nanowire embedded microcantilever. Low Young's modulus of SU-8, low process temperature and high strain sensing capability of ZnO makes this platform an attractive option for sensor applications. For both the approaches, electromechanical and mechanical characterization results are reported in this work.

关键词： Microcantilever ZnO sensor CantiFET SU-8 Polymer cantilever piezoresistive

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Copper(II) oxide nanowire array hydrogen sensor via facile large area contact integration

Copper(II) oxide nanowire array hydrogen sensor via facile l...

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2013 17th International conference on solid-state sensors, Actuators and Microsystems, TRANSDUCERS and EUROsensorS 2013

作者： Limkrailassiri, K. Kozinda, A. Lin, L. Berkeley Sensor and Actuator Center University of California Berkeley United States

ISBN: (纸本)9781467359818

This paper presents a novel method to achieve large area contact integration for copper(II) oxide (CuO) nanowire array-based hydrogen gas sensors, which provides a simple solution to the ongoing challenge of harvesting nanostructured materials for gas sensing applications. The method presented herein offers six distinct advantages over previous nanostructured gas sensing technologies: (1) convenient electrical access to as-grown, freestanding nanowire arrays, thereby obviating postgrowth thin-film metallization, (2) lithography-free fabrication, (3) usage of large area nanowire arrays to circumvent low yield of single nanowire sensors, (4) reusability of contacts for batch characterization, (5) compatibility with all free-standing arrays grown on electrically conductive substrates, and (6) rapid response and recovery times. The CuO nanowire array-based gas sensors exhibited 5× to 25× increased resistance during operation, and a 20× improvement in recovery time compared to prior works. © 2013 IEEE.

关键词： Copper oxides

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Nernst-Planck-Poisson Model for the Description of Behaviour of solid-Contact Ion-Selective Electrodes at Low Analyte Concentration

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ELECTROANALYSIS 2013年第1期25卷 133-140页

作者： Jasielec, Jerzy J. Lisak, Grzegorz Wagner, Michal Sokalski, Tomasz Lewenstam, Andrzej Abo Akad Univ Proc Chem Ctr Ctr Proc Analyt Chem & Sensor Technol ProSens Turku 20500 Finland AGH Univ Sci & Technol Fac Mat Sci & Ceram PL-30059 Krakow Poland

All-solid-state electrodes are increasingly being used in clinical, industrial and environmental analysis. This wide range of applications requires deep theoretical description of such electrodes. This work concentrates on the development of a numerical tool for the qualitative prediction of electrochemical behaviour for solid-contact ion-selective electrodes at low analyte concentrations. For this purpose, a general approach to the description of electro-diffusion processes, namely the Nernst-Planck-Poisson (NPP) model, was applied. The results obtained from this model are verified by experimental data of lead(II)-selective electrodes based on a polymeric PVC membrane with polybenzopyrene doped with Eriochrome Black T used as the solid contact.

关键词： Potentiometry Ion-selective electrodes solid contact Response Nernst-Planck-Poisson model Electrodiffusion

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High Power High Brightness Laser Diode Sources

High Power High Brightness Laser Diode Sources

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conference on Lasers and Electro-Optics (CLEO)

作者： Kohl, Andreas Rabot, Olivier Quantel ZA Courtaboeuf F-91940 Les Ulis France

ISBN: (纸本)9781557529732

High Power Laser Diodes (HPLD) are increasingly used in different fields of applications such as Scientific, Industrial, Medical and Defense. Our significant performances improvements (especially in peak power, divergence and efficiency) and a reproducible manufacturing process have led to reliable, highly robust components. For industrial applications these devices are used predominantly for pumping of solid state lasers. Due to the drastically falling price per watt they are more and more replacing flash lamps as pump sources. Their compact size and high reliability make diode laser arrays ideally suited to this demanding market. For Scientific applications, the brightness as well as the cost are the two main drivers. In order to respond to this demand, QLD has focused its development on very high peak power bars associated with very high E/O efficiency. The level of energy QLD is achieving now has also pushed us to develop a power supply driver able to operate such diodes at up to 1000A under 100V.

关键词： HPLD reliable solid state lasers

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InGaAs infrared detector development for SWIR imaging applications

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conference on Electro-Optical and Infrared Systems - Technology and applications X

作者： Rutz, F. Kleinow, P. Aidam, R. Bronner, W. Kirste, L. Walther, M. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9780819497659

We report on materials and technology development for short-wave infrared photodetectors based on InGaAs p-i-n and avalanche photodiodes (APDs). Using molecular beam epitaxy for the growth of thin layers with abrupt interfaces, which are required for optimized APD structures, excellent crystalline quality has been achieved for detector structures grown on 3-inch InP substrates. For the fabrication of focal plane detector arrays, we employed a mesa etching technology in order to compare the results with the commonly utilized planar technology. Camera detector arrays as well as test structures with various sizes and geometries for materials and process characterization are processed using a dry-etch mesa technology. Aspects of the process development are presented along with measured dark-current and photo-current characteristics of the detector devices.

关键词： InGaAs short-wave infrared SWIR avalanche photodetector APD imaging

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Thin Film of Giant Magnetoresistance (GMR) Material Prepared by Sputtering Method

Thin Film of Giant Magnetoresistance (GMR) Material Prepared...

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International conference on Applied Physics and Material applications (ICAPMA 2013)

作者： Djamal, Mitra Ramli Inst Teknol Bandung Theoret High Energy Phys & Instrumentat Res Grp Fac Math & Nat Sci Jl Ganesa 10 Bandung 40132 Indonesia Univ Negeri Padang Dept Phys Padang 25131 Indonesia

ISBN: (纸本)9783037857786

In recent decades, a new magnetic sensor based on magnetoresistance effect is highly researched and developed intensively. GMR material has great potential as next generation magnetic field sensing devices. It has also good magnetic and electric properties, and high potential to be developed into various applications of electronic devices such as: magnetic field sensor, current measurements, linear and rotational position sensor, data storage, head recording, and nonvolatile magnetic random access memory. GMR material can be developed to be solid state magnetic sensors that are widely used in low field magnetic sensing applications. A solid state magnetic sensor can directly convert magnetic field into resistance, which can be easily detected by applying a sense current or voltage. Generally, there are many sensors for measuring the low magnetic field, such as: fluxgate sensor, Hall sensor, induction coil, GMR sensor, and SQUID sensor. Compared to other low magnetic field sensing techniques, solid state sensors have demonstrated many advantages, such as: small size (<0.1mm(2)), low power, high sensitivity (similar to 0.1Oe) and good compatibility with CMOS technology. The thin film of GMR is usually prepared using: sputtering, electro deposition or molecular beam epitaxy (MBE) techniques. But so far, not many researchers reported the manufacture of thin film of GMR by dc-Opposed Target Magnetron Sputtering (dc-OTMS). In this paper, we inform the development of GMR thin film with sandwich and spin valve structures using dc-OTMS method. We have also developed organic GMR with Alq3 as a spacer layer.

关键词： GMR sensor NiCoFe sandwich spin sputtering thin film

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Investigations on pressure sensors for medical applications based on fiber Bragg gratings

Investigations on pressure sensors for medical applications ...

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2013 17th International conference on solid-state sensors, Actuators and Microsystems, TRANSDUCERS and EUROsensorS 2013

作者： Voigt, S. Rothhardt, M. Becker, M. Mehner, J. Chemnitz University of Technology Department of Microsystems Chemnitz Germany Institute for Photonic Technology IPHT Jena Germany

ISBN: (纸本)9781467359818

The concept of fiber-Bragg grating (FBG) arrays was investigated regarding its potential to serve as a new method to fabricate cost efficient and high performance pressure sensor catheters for hollow organs. Draw tower fibers with a reduced diameter of 80 μm and a co-extrusion fabrication process were used in order to keep the catheter simple and prone to be used as one way product. The total diameter of these catheters can range literally from the fiber diameter of 80 μm up to 5 mm. Finite element based investigations on the design were followed by experimental characterization of the material parameters and the fabrication of samples. These samples were thoroughly examined regarding pressure, tension and temperature sensitivity as well as their mechanical properties like stiffness, tensile strength and geometry. As a result of these studies pressure sensor catheter designs for hollow organs in human medicine are proposed. With state of the art interrogation systems for FBG-sensor readout different kinds of measurement catheters are possible to be designed. Possible applications are motility measurements ranging from the human esophagus to the gut, containing rectum, colon and small intestine and even sphincter of Oddi which are accessible by placing the catheter via endoscopic techniques. The use in cardiac arrangements is in preparation. © 2013 IEEE.

关键词： Pressure sensors

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development and Prototyping of the DEPFET Active Pixel Detector (June 2013)

Development and Prototyping of the DEPFET Active Pixel Detec...

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3rd International conference on Advancements in Nuclear Instrumentation, Measurement Methods and their applications (ANIMMA)

作者： Scheirich, J. Charles Univ Prague Fac Math & Phys Inst Particle & Nucl Phys Prague 18000 Czech Republic

ISBN: (纸本)9781479910465;9781479910472

Active pixel sensor composed of DEPFETs (DEPleted Field Effect Transistors) array has been developed by DEPFET collaboration. The concept of DEPFET was proposed by Kemmer and Lutz in 1987 and today, it was developed into state-of-the-art highly granular, ultra-transparent monolithic pixel detectors for vertex reconstruction at future collider experiments. Excellent signal over noise performance is provided by integration of a MOSFET (Metal Oxide Semiconductor Transistor) in each pixel, which works as the first amplification stage of readout electronics. Thinning technologies make it possible to manufacture DEPFET sensors with thickness of active sensor area 50-75 micrometers. Steering ASICs (Application-Specific Integrated Circuits) as well as test systems were developed to characterize and optimize the DEPFET sensors. The DEPFET detector is being developed as a vertex detector at Belle II experiment at the electron-positron SuperKEKB collider in Japan and the future International Linear Collider, but the concept of the DEPFET sensor offers also other fields of applications. In this paper the key parameters of the sensor design are presented, together with the individual ASICs. Furthermore, results of the prototypes tested using radioactive source, and laser are shown.

关键词： Front-end electronics for detector readout Detector alignment and calibration methods (lasers, sources, particle-beams) solid state detectors

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Silicon nanowire based ring shape force sensor for sensorized guidewires

Silicon nanowire based ring shape force sensor for sensorize...

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2013 17th International conference on solid-state sensors, Actuators and Microsystems, TRANSDUCERS and EUROsensorS 2013

作者： Han, B. Yoon, Y.-J. Hamidullah, M. Lin, A.T.-H. Park, W.-T. Institute of Microelectronics ASTAR Singapore Nanyang Technological University Singapore Seoul National University of Science and Technology Korea Republic of

ISBN: (纸本)9781467359818

This paper presents the development of a ring shaped force sensor for sensorized guidewire applications. The sensor comprises a suspended ring structure located at the center of four suspended beams that can be integrated on the distal tip of a guidewire. SiNWs with a length of 6 μm and a cross section of 90 nm × 90 nm are embedded at the anchor of each silicon bridge as the piezoresistive sensing elements. Taking advantage of the high sensitivity of SiNWs, the fabricated sensor was capable to detect small displacement in nm ranges with a sensitivity of 13.4 × 10-3 μm-1 in the z-direction. This force sensor showed high linearity (>99.9%) to the applied load and no obvious hysteresis was observed. © 2013 IEEE.

关键词： Nanowires

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Process-induced stress and hydrogen effects on monolithic integrated BiCMOS-MEMS resonators

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sensorS AND ACTUATORS A-PHYSICAL 2013年 202卷 75-84页

作者： Zhao, Danqi Zhang, Xia He, Jun Huang, Xian Yang, Fang Liu, Peng Zhang, Dacheng Peking Univ Inst Microelect Key Lab Nano Micro Fabricat Technol Beijing Peoples R China

In this article, the simultaneous fabrication of MEMS and Bi-CMOS components on a monolithic integrated micro-cantilever resonator is investigated. Surface micromachining method for cantilever fabrication has been merged with conventional CMOS process, and release of MEMS structure is conducted after CMOS process. We for the first time propose the additive effects of hydrogen and MEMS steps induced mechanical stress on the IC performance, and at the same time provide a re-adjusting method for integrated process design, in which the NMOS/PMOS threshold voltage is re-adjusted to symmetry by utilizing the MEMS-process-induced IC performance degradation. On-chip digital/analog Bi-CMOS circuits function properly as demonstrated. The proposed re-adjustment process, suitable for fabrications with a variety of design CMOS-MEMS integrated process flexibilities, has the potential to fabricate integrated devices (high quality factor variable capacitors, micromirror arrays and multi-axis gyroscopes etc.). (C) 2013 Elsevier B.V. All rights reserved.

关键词： CMOS-MEMS Monolithic integration Stress Hydrogen Resonator sensor

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