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检索条件"任意字段=Conference on Solid State Sensor Arrays - Development and Applications"

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An optical scanner on silicon photonics integrated circuit for LIDAR application 19

An optical scanner on silicon photonics integrated circuit f...

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19th Coherent Laser Radar conference, CLRC 2018

作者： Inoue, Daisuke Ichikawa, Tadashi Kawasaki, Akari Yamashita, Tatsuya Toyota Central Research and Development Laboratory Incorporated 41-1 Yokomichi Nagakute Aichi Japan

The reliability and small size of solid state scanners makes them ideal for LIDAR. We fabricated an optical scanner using silicon photonics integrated circuit technology. The scanner comprises a ring resonator multiplexer and a number of grating arrays, and employs a beam switching method. The beam switching method means that the scanner is movement-free. We demonstrated the successful operation of this scanner. The multiplexer determines the optical path and one of the gratings is selected for the emitter. The scanning angle obtained was 6 degrees. LIDAR sensors can be used for automated cruising in automotive applications. © 2018 Coherent Laser Radar conference.

关键词： Scanning

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Design possibilities for photodiode arrays with integral silicon-gate scan generators

Design possibilities for photodiode arrays with integral sil...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： G. Weckler R. Dyck Fairchild Research and Development Lab. Palo Alto CA USA

A RECENTLY-DESCRIBED single-dimension self-scanning photodiode array has been seminal to a growing number of modified structures for a variety of applications. The MOS shift register, which controls array scanning, has in particular demonstrated considerable versatility and applicability for different array designs. This paper will discuss the tradeoffs in shift register and photodiode structure which set the limits on array performance.

关键词： Photodiodes sensor arrays Shift registers Clocks FETs Capacitance Impedance Sampling methods Diodes Charge transfer

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A 0.37W 143dB-Dynamic-Range 1Mpixel Backside-Illuminated Charge-Focusing SPAD Image sensor with Pixel-Wise Exposure Control and Adaptive Clocked Recharging

A 0.37W 143dB-Dynamic-Range 1Mpixel Backside-Illuminated Cha...

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2022 IEEE International solid-state Circuits conference, ISSCC 2022

作者： Ota, Yasuharu Morimoto, Kazuhiro Sasago, Tomoya Shinohara, Mahito Kuroda, Yukihiro Endo, Wataru Maehashi, Yu Maekawa, Shintaro Tsuchiya, Hiroyuki Abdelahafar, Aymantarek Hikosaka, Shingo Motoyama, Masanao Tojima, Kenzo Uehira, Kosei Iwata, Junji Inui, Fumihiro Matsuno, Yasushi Sakurai, Katsuhito Ichikawa, Takeshi Canon Kanagawa Japan

ISBN: (纸本)9781665428002

Demands for single-photon-sensitive high-dynamic-range (HDR) imaging in security, automotive, and medical applications have driven development of scalable single-photon avalanche diode (SPAD)-based image sensors. In recent years, 3D-stacking technology combined with advanced CMOS processes has enabled pixel-parallel photon counting in sub-10m SPAD pixels. A major technical challenge in realizing high-definition SPAD image sensors lies in a trade-off between power consumption and dynamic range (DR). SPAD pixels inherently consume a considerable amount of power due to the high-voltage operation and high current gain. Power consumption from the SPAD array (PSPAD) grows significantly with increasing incident photon flux, and often dominates over that from the readout circuit under high light conditions. Restricting maximum photon counts per frame could suppress the maximum PSPAD, at the expense of DR. To address this issue, a recharging circuit architecture must be carefully considered. Passive recharging has been widely employed for HDR imaging SPADs [1]-[3], but it is not a viable option for megapixel implementation due to the huge PSPAD, typically reaching tens of watts at excess illuminance. A clocked recharging architecture provides a scalable solution thanks to its compact circuitry and greatly reduced PSPAD at excess illuminance [4]-[6], but to date no existing SPAD sensor has simultaneously achieved megapixel resolution, sub-watt total power consumption, and > 120dB DR. © 2022 IEEE.

关键词： Electric power utilization

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A 160x128 single-photon image sensor with on-pixel 55ps 10b time-to-digital converter

A 160x128 single-photon image sensor with on-pixel 55ps 10b ...

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2011 IEEE International solid-state Circuits conference, ISSCC 2011

作者： Veerappan, Chockalingam Richardson, Justin Walker, Richard Li, Day-Uey Fishburn, Matthew W. Maruyama, Yuki Stoppa, David Borghetti, Fausto Gersbach, Marek Henderson, Robert K. Charbon, Edoardo Delft University of Technology Delft Netherlands STMicroelectronics Edinburgh United Kingdom University of Edinburgh Edinburgh United Kingdom Fondazione Bruno Kessler - IRST Trento Italy EPFL Lausanne Switzerland

ISBN: (纸本)9781612843001

Image sensors capable of resolving the time-of-arrival (ToA) of individual photons with high resolution are needed in several applications, such as fluorescence lifetime imaging microscopy (FLIM), Förster resonance energy transfer (FRET), optical rangefinding, and positron emission tomography. In FRET, for example, typical fluorescence lifetime is of the order of 100 to 300ps, thus deep-subnanosecond resolutions are needed in the instrument response function (IRF). This in turn requires new time-resolved image sensors with better time resolution, increased throughput, and lower costs. solid-state avalanche photodiodes operated in Geiger-mode, or single-photon avalanche diodes (SPADs), have existed for decades [1] but only recently have SPADs been integrated in CMOS. However, as array sizes have grown, the readout bottleneck has also become evident, leading to hybrid designs or more integration and more parallelism on-chip [2,3]. This trend has accelerated with the introduction of SPAD devices in deep-submicron CMOS, that have enabled the design of massively parallel arrays where the entire photon detection and ToA circuitry is integrated on-pixel [4,5]. © 2011 IEEE.

关键词： Image sensors

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2010 IEEE Nanotechnology Materials and Devices conference, NMDC2010

2010 IEEE Nanotechnology Materials and Devices Conference, N...

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2010 4th IEEE Nanotechnology Materials and Devices conference, NMDC2010

ISBN: (纸本)9781424488964

The proceedings contain 86 papers. The topics discussed include: the memristor as controller;graphene based NO2 gas sensor;hydrothermal growth and field emission properties of ZnO nanotube arrays;self-heating in SOI Nano devices;outstanding performance of a nanofilm microstrip antenna;the effects of vacancies on the transport properties of zigzag graphene nanoribbons;nanoscale welding of MWCNTs for nanodevice applications;modeling and simulation of organic solar cells;development of smart security system;high risk of underestimation of internal eye pressure for elderly people;the current status and issues for photovoltaic power generation -SME approach;effects of measurement for dynamic visual acuity (DVA) in virtual environment;establishment of transport system for micro structures by using bacteria sheet;and development of readout system for carbon nanotube based infrared detector.

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High Power and High Efficiency kW 88x-nm Multi-Junction Pulsed Diode Laser Bars and arrays

High Power and High Efficiency kW 88x-nm Multi-Junction Puls...

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conference on High-Power Diode Laser Technology and applications XII

作者： Chen, Zhigang Bai, John Dong, Weimin Guan, Xingguo Zhang, Shiguo Elim, Sandrio Bao, Ling Grimshaw, Mike Devito, Mark Kanskar, Manoj NLIGHT Corp Vancouver WA 98665 USA

ISBN: (纸本)9780819498786

There is great interest in the development of high-power, high-efficiency and low cost QCW 88x-nm diode laser bars and arrays for pumping solid state lasers. We report on the development of kW 88x-nm diode laser bars that are based on a bipolar cascade design, in which multiple lasers are epitaxially grown in electrical series on a single substrate. Multiple laser junctions, each of which is based on nLight's high performance 88x-nm epitaxial design, are separated by low resistance tunnel junctions with resistance as low as 8.0x10(-6) Omega-cm(2). Optimization of bar geometry and wafer fabrication processes was explored for electrical and optical performance improvement in double-junction diode lasers. A QCW power of 630 W was demonstrated in a 3-mm wide mini-bar with 3-mm cavity length. Peak efficiency of 61% was measured with 200 mu s and 14 Hz pulses, at a heatsink temperature of 10 degrees C. Further power scaling was demonstrated in a 1-cm wide bar with 3-mm cavity length, where a record high peak power of 1.77 kW was measured at 1 kA drive current. Ongoing work for further power scaling includes development of triple-junction diode laser bars and double-junction bar-stack that emits > 10kW optical power.

关键词： Diode laser bar stacked array high power high efficiency DPSS multi-junction bipolar cascade low cost

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Carbon nanotube-based high temperature vacuum microelectronics for E&P applications

Carbon nanotube-based high temperature vacuum microelectroni...

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SPE International Oilfield Nanotechnology conference 2012

作者： Manohara, H. Mojarradi, M. Toda, R. Lin, R.H. Jet Propulsion Laboratory California Institute of Technology United States

ISBN: (纸本)9781622761104

Field emission from carbon nanotube (CNT) bundles has been applied to develop new class of computational vacuum microelectronics for harsh environment applications. CNTs have demonstrated superior field emission performance because of their low emission threshold, high current density, and are conducive for monolithic integration with silicon structures to develop microelectronic/microsensor systems. In this paper we present high-temperature tolerant "digital" vacuum electronics using CNTs. This technology is applicable to in situ sensor electronics for down-hole applications where the operating environment is high temperature, high pressure, and has corrosive chemicals. The digital and analog electronic devices developed using CNT-vacuum microelectronic technology can be integrated with sensor systems to achieve prolonged stand-alone operation during E&P. NASA-JPL has developed high performance cold cathodes using arrays of carbon nanotube bundles that produce > 15 A/cm2 at applied fields of 5 to 8 V/μm. They have exhibited robust operation in poor vacuums of 10-6 to 10-4 Torr- a typically achievable range inside hermetically sealed microcavities. By monolithically integrating CNT cathodes with micromachined Si multi-gate structures we have demonstrated a new class of programmable "vacuum" logic gates. We have achieved switching operation at temperatures up to 700°C. The initial design, operation, and the potential performance in an improved design will be presented in this paper along with vacuum packaging techniques to make stand alone devices for circuit board integration. CNT-vacuum microelectronics opens up a new regime of in situ electronics for novel sensor/electronics systems because of their inherent high-temperature tolerance, and corrosion resistance. Unlike traditional vacuum tubes, these are low power, miniature, and potentially as fast as their solid-state counterparts while exhibiting superior reverse bias or leakage current characteristics. These de

关键词： Carbon nanotubes

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High temperature hybrid nanodiamond sensor systems

High temperature hybrid nanodiamond sensor systems

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IMAPS International conference and Exhibition on High Temperature Electronics, HiTEC 2014

作者： Fraley, John R. Kegley, Lauren Minden, Stephen Davidson, Jimmy L. Kerns, David Arkansas Power Electronics International Inc. FayettevilleAR72701 United States International Femtoscience Inc. NashvilleTN37205 United States

ISBN: (纸本)9781634391153

In recent years, high temperature semiconductors have been utilized in wireless telemetry systems for use in military and commercial applications, wherein a high temperature environment combined with other factors such as rotating machinery or weight- constraints preclude the use of conventional silicon based wireless telemetry or wired sensor solutions. Present systems include those which can measure temperatures, pressures, vibrations, and strains. By conibining the advanced electronics developed for these systems with novel sensor elements created using chemical vapor deposition (CVD) nanodiamond technology, a wide range of other high temperature sensing systems can be enabled. The unique properties of the diamond sensors have proven in principle the capability to sense, with quantifiable signal, a wide variety of parameters under extreme conditions including very high temperatures and pressures. It has been ciear for some time that diamond would be the ideal material of choice for solid-state sensors, but only in recent years has the advent of CVD diamond (as opposed to natural or HPHT [high pressure, high temperature] formation) opened the door for its practical development into harsh environment sensor systems. By combining these diamond sensor elements with high temperature electronics and high temperature packaging approaches, smart sensors can be developed to measure parameters ranging from gas chemical species on the surface of Venus, to neutron flux rates outside of a nuclear reactor core. The research presented here is centered around the use of hybrid diamond sensors for neutron detection applications in Nuclear Thermal Propulsion systems. The current technology state and development needs for these hybrid high temperature diamond smart sensors will be highlighted to potentially encourage future R&D from the high-temperature electronics community.

关键词： Nanodiamonds

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HW-SW Optimization of DNNs for Privacy-preserving People Counting on Low-resolution Infrared arrays

HW-SW Optimization of DNNs for Privacy-preserving People Cou...

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27th Design, Automation and Test in Europe conference and Exhibition (DATE)

作者： Risso, Matted Xie, Chen Daghero, Francesco Burrello, Alessio Mollaei, Seyedmorteza Castellano, Marco Macii, Enrico Poncino, Massimo Pagliari, Daniele Jahier Politecn Torino I-10129 Turin Italy ST Microelect Srl I-20010 Cornaredo Italy

ISBN: (纸本)9798350348606;9783981926385

Low-resolution infrared (IR) array sensors enable people counting applications such as monitoring the occupancy of spaces and people flows while preserving privacy and minimizing energy consumption. Deep Neural Networks (DNNs) have been shown to be well-suited to process these sensor data in an accurate and efficient manner. Nevertheless, the space of DNNs' architectures is huge and its manual exploration is burdensome and often leads to sub-optimal solutions. To overcome this problem, in this work, we propose a highly automated full-stack optimization flow for DNNs that goes from neural architecture search, mixed-precision quantization, and post-processing, down to the realization of a new smart sensor prototype, including a Microcontroller with a customized instruction set. Integrating these cross-layer optimizations, we obtain a large set of Pareto-optimal solutions in the 3D-space of energy, memory, and accuracy. Deploying such solutions on our hardware platform, we improve the state-of-the-art achieving up to 4.2x model size reduction, 23.8x code size reduction, and 15.38x energy reduction at iso-accuracy.

关键词： Deep Learning Neural Architecture Search TinyML MCUs Smart sensors

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A high resolution solid state Charge Coupled Device (CCD) space borne earth imager

A high resolution solid state Charge Coupled Device (CCD) sp...

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applications of Electronic Imaging Systems 1978

作者： Hirschberg, Irving Imaging Systems Division Fairchild Camera and Instrument Corp. SyossetNY11791 United States

A solid state (Charge Coupled Device) imaging system is described which satisfies the requirement for multispectral, high resolution, real time imagery. The system, using an earth resources survey satellite as its platform is configured to yield a 10 meter ground resolution with a 50 kilometer swath width at approximately 1000 km altitude. Four spectral bands ranging from 0.5 to 1.1 μm have been selected and are implemented by optically butting three 1728 pixel linear arrays (5184 pixel per band) on appropriate beam splitting prisms. The device employed, the Fairchild CCD 121H, shown in Figure 1, is a monolithic self-scanned image sensor utilizing two phase, buried n-channel CCD technology. The device has an element-to-element pitch of 13 μm (approximately 2000 pixel/inch) and has been demonstrated to have a wide dynamic range (2500:1), Figure 2, low noise equivalent exposure and dimensionally precise photosite spacing. Consideration of focal plane design, geometric accuracy, image registration, temperature control, optical design, and noise figures are discussed. Particular emphasis has been placed on the unique properties of CCD detectors which allow for specialized post processing of the video for dealing with low contract scenarios. The paper concludes with new trends in specialized time delay and integration (TDI) mode imaging systems now under study and development at Fairchild. © 1978 SPIE. All rights reserved.

关键词： Charge coupled devices

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