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检索条件"任意字段=Conference on Solid State Sensor Arrays - Development and Applications"

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15.6 A 30-to-80MHz simultaneous dual-mode heterodyne oscillator targeting NEMS array gravimetric sensing applications with a 300zg mass resolution

15.6 A 30-to-80MHz simultaneous dual-mode heterodyne oscilla...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： Guillaume Gourlat Marc Sansa Patrick Villard Gilles Sicard Guillaume Jourdan Issam Ouerghi Gérard Billiot Sébastien Hentz CEA-LETI-MINATEC Grenoble France

ISBN: (纸本)9781509037599

The extreme sensitivity of nano electro mechanical system (NEMS) to atomic scale physical variations has led to the breakthrough development of NEMS-based mass spectrometry systems capable of measuring a single molecule [1]. Parallel sensing using thousands of devices will help to circumvent the small effective sensing area while opening new perspectives for applications that require spatial mapping. While the development of NEMS CMOS co-integration technology [2] is of paramount importance to achieve high density sensor arrays (>1000 devices), the readout circuitry capable of tracking NEMS resonator frequency shifts is still the limiting factor for the very large scale integration of individually addressed sensors. Moreover, in order to resolve the mass and position of an adsorbed analyte, single particle mass sensing applications require to track simultaneously and in real time at least two modes of the resonators. This requirement adds complexity to the design of the overall system. To respond to the size, power consumption and resolution constraints linked to NEMS array measurement, we propose a compact heterodyne self-oscillator analog front-end IC which performs 1ms simultaneous dual-mode frequency tracking compatible with a “pixel-based” readout scheme. We report less than 1mA power consumption with a 300zg mass resolution for 26000μm 2 size.

关键词： Nanoelectromechanical systems Resonant frequency Frequency measurement sensors Phase locked loops Voltage-controlled oscillators

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Quasi-monolithic laser system based on 3D-printed optomechanics 7

Quasi-monolithic laser system based on 3D-printed optomechan...

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conference on Components and Packaging for Laser Systems VII

作者： Kranert, Fabian Budde, Jana Hinkelmann, Moritz Wienke, Andreas Neumann, Joerg Kracht, Dietmar Lachmayer, Roland Laser Zentrum Hannover eV Hollerithallee 8 D-30419 Hannover Germany Cluster Excellence PhoenixD Photon Opt & Engn Inn Hannover Germany Inst Prod Tentwicklung & Geratebau Univ 1 D-30823 Garbsen Germany

ISBN: (数字)9781510641709

ISBN: (纸本)9781510641709

An advantage of using additive manufacturing (AM) processes as opposed to conventional fabrication methods is that the additional degrees of freedom in design allow compact and at the same time lightweight components to be manufactured. In addition, AM reduces the material consumption, resulting in a more cost efficient production. Among others, the field of laser development benefits from the progressive implementation of AM-related opportunities. However, this integration is mostly limited to single components. In contrast, we present a compact, lightweight solid-state laser oscillator system for low-power applications based on additively manufactured optomechanical components via Fused Filament Fabrication (FFF). The laser system is based on a Nd:YVO4-crystal pumped externally with a fiber-coupled laser diode at a wavelength of 808nm and a maximum output power of 3 W. The commercial optical components, such as lenses and the crystal, are firmly embedded via FFF in quasi-monolithic optomechanics. Thereby, they are fixed at their position and thus secured against misalignment. Furthermore, sensor technology for temperature monitoring is implemented into the structure. The possibility of the FFF process to work with different materials in parallel is used here. This multi-material printing approach enables the use of the appropriate polymer for the individual mechanical and thermal requirements for any structural part. The thermal stability of the printed structures is evaluated to ensure damage-free operation of the 3D-printed polymer optomechanics. Furthermore, output power, optical-to-optical efficiency, beam pointing, and spatial beam profile of the laser system are measured for several on- and off-switching cycles as well as for long-term operation.

关键词： 3D-printed optomechanics solid-state laser system packaging and mounting of optical components additive manufacturing compact and lightweight optomechanics

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Short Course: Scalable mm-Wave Phased arrays for Imaging and 5G Communications

Short Course: Scalable mm-Wave Phased Arrays for Imaging and...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： Bodhisatwa Sadhu

ISBN: (数字)9781538685310

ISBN: (纸本)9781538685327

Large numbers of millimeter-wave antenna elements (typically from 10s to 100s) can be supported using multiple integrated circuits (ICs) that are further integrated at the package level to create a phased-array module. This talk motivates the need for millimeter-wave phased-array scaling to realize such large apertures and outlines key challenges toward their implementation. Various aspects of phased array scaling, including beamforming architectures and functional partitioning, signal distribution among multiple ICs, module-level implementation of antennas and packaging, and digital control will be discussed. Two recently introduced scaled 64-element dual-polarized phased array designs will be reviewed as implementation examples: 1) A phased-array transceiver module operating at 28GHz supporting 5G applications, and 2) TX and RX phased arrays operating at 94GHz, suitable for backhaul and imaging applications. Design techniques implementing requirements relevant to these applications will be discussed, and measurement results validating the designs will be presented. Finally, an emerging approach to managing the rich control space associated with highly integrated phased-array designs will be discussed.

关键词： Tutorials Radio frequency Wireless communication Transceivers solid state circuits Quantum computing Optical transmitters Computer architecture Wireless sensor networks Training

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3-dimensional data storage in magnetic nanowire networks

3-dimensional data storage in magnetic nanowire networks

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International conference on Magnetics (INTERMAG)

作者： R. P. Cowburn Blackett Physics Laboratory Imperial College London London UK

This paper presents an ultrahigh density data storage device based upon a 3-dimensional network of magnetic nanowires. The device is entirely solid state and can achieve storage densities comparable with hard disk drive densities. It is well suited to small form factor applications such as mobile phones and digital cameras, where the manufacturing costs of hard disk drives and difficulty in scaling to small thicknesses make solid state solutions attractive.

关键词： Memory Magnetic sensors Magnetic domain walls Magnetic separation Magnetic domains Magnetic fields sensor arrays Frequency Magnetic modulators Lithography

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development of a mixed-mode pixel array detector for macromolecular crystallography

Development of a mixed-mode pixel array detector for macromo...

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2004 Nuclear Science Symposium, Medical Imaging conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors

作者： Angello, S.G. Augustine, F. Ercan, A. Gruner, S.M. Hamlin, R.C. Hontz, T. Xuong, Ng. H. Renzi, M.J. Schuette, D.R. Tate, M.W. Vernon, W. 12550 Stowe Dr. Poway CA 92064 United States Augustine Engineering 2115 Park Dale Ln. Encinitas CA 92024 United States Department of Applied and Engineering Physics Cornell University Ithaca NY United States MIT Lincoln Laboratory Lexington MA United States CHESS and the Physics Department Cornell University Ithaca NY United States Physics Department Cornell University Ithaca NY United States Laboratory of Atomic and Solid State Physics Cornell University Ithaca NY United States Departments of Chemistry and Biochemistry University of California San Diego San Diego CA 92093 United States

A Mixed-Mode Pixel Array Detector (MMPAD) has been conceived for protein crystallography applications. The most notable feature of the detector is the combination of analog and digital approaches used in the pixel to generate very large dynamic range, low dead time, and fast readout of the types of spot intensity measurements needed in x-ray images from large macromolecules. Prototype structures for the pixel have been fabricated and evaluated and indicate that an intensity range of 107 to 1 can be measured with a precision of 0.25%, while still maintaining a high DQE for x-rays in the 6 - 18keV range. The mixed-mode structure is compatible with a fast I/O system and allows the possibility of full-frame readout in the ms range. We present details of pixel behavior, design of support electronics, hybridization results and plans for fabrication of large arrays. © 2004 IEEE.

关键词： arrays

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Array of X and gamma ray scintillator detector for space gamma ray telescope application

Array of X and gamma ray scintillator detector for space gam...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： Claudio Labanti Martino Marisaldi Fabio Fuschino Paolo Bastia Barbara Negri Francesco Perotti Heike Soltau IASF department in Bologna Istituto Nazionale di Astrofisica Italy INAF/IASF Bologna Italy Thales Alenia Space Milan Italy Agenzia Spaziale Italiana Rome Italy IASF department INAF Milan Italy PN-Sensor München Germany Germany

The instruments on board the latest gamma observatories (INTEGRAL, AGILE, GLAST) combines technologies based either on solid state or on scintillator detector, the first one being favorite when a low energy threshold and a good energy resolution is required, the latter being more convenient for large volume when worse performance are still acceptable. With the development of new scintillator materials and even more with new low-noise ligth readout devices the differences between the two techniques are narrowing and for some application the cheaper scintillator detector can compete with solid state devices. Furthermore both these detector concepts can be combined in a single compact device by means of the Pulse Shape Discrimination (PSD) technique that allows to discriminate direct interactions in silicon from scintillation events. Combined in arrays they can be the base for position senstive planes to be combined with coded mask in imaging instruments or the component of new generation Compton based telescopes. For this purpose two prototype systems have been designed and realized, both based on a 20 channels Silicon Drift Detectors (SDD) monolithic array coupled to individual 1 cm thick CsI(Tl) scintillator crystals. In the first system the detector readout is implemented with ASICs tailored specifically to the SDD readout, while in the second system the PSD readout of the array is implemented. The performance of these kind of detectors tested in the various prototypes as well as their applications in new generation space telescopes are discussed.

关键词： sensor arrays Gamma ray detection Gamma ray detectors Telescopes Space technology Instruments solid state circuits solid scintillation detectors Silicon Prototypes

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Major Consumer Image sensor Innovations Presented at IEDM

Major Consumer Image Sensor Innovations Presented at IEDM

引用

International Electron Devices Meeting (IEDM)

作者： Albert Theuwissen Harvest Imaging Bree Belgium

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

Major image sensor innovations that are reported in past editions of IEDM are reviewed in the paper. CMOS image sensor technology has been revolutionized over the last couple of decades. Several the improvements have been initially published at past IEDMs. In this way the conference makes a major and valuable contribution by reporting these innovations, while also stimulating imaging engineers to continue with high-level R&D work to further increase the performance level of solid-state image sensors.

关键词： Image sensors Technological innovation Filters Logic gates Silicon Photodiodes Resins Research and development Logic arrays sensor arrays

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Silicon Micromachining for sensor applications

Silicon Micromachining for Sensor Applications

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European conference on solid-state Device Research (ESSDERC)

作者： F. Rudolf J. Bergqvist CSEM Neuchatel Switzerland

The capacitive silicon sensor technology is an example of how silicon micromachining can be applied to a family of sensors. Absolute pressure sensors, accelerometers, and microphones can be fabricated with basically the same technology. Its main elements are standard IC processing, silicon etching, and wafer bonding. Placed in a suitable microsystem development environment, bulk silicon micromachining is still a key technology for new and low cost sensors and actuators.

关键词： Silicon Micromachining Capacitive sensors Glass Etching Wafer bonding Electrodes Chemical sensors Capacitors Machining

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development of Ultra-Fast Silicon Detectors for 4D tracking

Development of Ultra-Fast Silicon Detectors for 4D tracking

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11th International conference on Position Sensitive Detectors (PSD)

作者： Staiano, A. Arcidiacono, R. Boscardin, M. Betta, G. F. Dalla Cartiglia, N. Cenna, F. Ferrero, M. Ficorella, F. Mandurrino, M. Obertino, M. Pancheri, L. Paternoster, G. Sola, V. Ist Nazl Fis Nucl Sez Torino Via P Giuria 1 Turin Italy Univ Trento Dipartimento Fis Via Sommarive 14 Povo Trent Italy Fdn Bruno Kessler Ctr Mat & Microsyst Via Sommarive 18 Povo Trent Italy Univ Turin Dipartimento Fis Via P Giuria 1 Turin Italy Univ Piemonte Orientale Dipartimento Sci Farmaceut Largo Donegani 2-3 Novara Italy

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of similar to 10 ps and similar to 10 mu m with a 50 mu m thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor similar to 10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 mu m thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

关键词： Charge transport and multiplication in solid media Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) Particle tracking detectors (solid-state detectors) Radiation-hard detectors

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A CMOS image sensor with a simple FPN-reduction technology and a hole accumulated diode

A CMOS image sensor with a simple FPN-reduction technology a...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： K. Yonemoto H. Sumi R. Suzuki T. Ueno Camera System Department CCD System Division Semiconductor Company CNC Sony Corporation Kanagawa Japan

CMOS image sensors are generally characterized by their low power consumption, single power supply and capability for on-chip system integration in contrast with CCD image sensors. Even though CMOS image sensors have these advantages, they are not yet widely used in image capture applications because of their insufficient image quality due to the difficulty in FPN cancellation. This FPN-reduction technology and a hole accumulated diode (HAD) for sensing elements is applied to the CMOS image sensor. The CMOS image sensor consists of a 640/spl times/480 pixel array in 1/3 inch image format, a current-to-voltage converter, a correlated double sampling circuit and a timing generator. This image sensor uses a 0.35 /spl mu/m CMOS logic process with specialized add-on steps for HAD. The power supply is 3.3 V and maximum frame rate is 30 frames/s.

关键词： CMOS image sensors CMOS technology Power supplies sensor arrays Energy consumption System-on-a-chip Charge-coupled image sensors Image quality Diodes Pixel

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