检索结果-内蒙古大学图书馆

Micromachined thermoelectric test device based on silicon/germanium superlattices: Simulation, preparation and characterization of thermoelectric behavior

Micromachined thermoelectric test device based on silicon/ge...

引用

International conference on Thermoelectrics (ICT)

作者： J. Schumann C.A. Kleint H. Vinzelberg J. Thomas M. Hecker J. Nurnus H. Boettner A. Lambrecht C. Kunzel F. Voelklein Leibniz-Institute for Solid State and Materials Research Dresden Dresden Germany Infineon Technologies GmbH & Co. KG Dresden Germany Fraunhofer Institut Physikalische MeBtechnik (IPM) Freiburg Germany Fraunhofer Institut Physikalische Messtechnik Freiberg Germany FB Physikalische Technik Fachhochschule Wiesbaden ROsselsheim Germany

Strain-symmetrized superlattice structures based on epitaxially grown Si/Ge multilayers are expected to be promising systems for efficient thermoelectric micro-systems. The paper presents the development of a membrane-type sensor device consisting of Si/Ge superlattice and Si/sub x/Ge/sub 1-x/-alloy legs allowing the study of the thermoelectric behavior at minimized influence of the supporting substrate components. By means of numerical simulation the optimum layout parameters were determined as well as the temperature distribution within the device including the sensitivity to be expected were estimated. Black body radiation measurements of the functional parameters on nearly freestanding thermopile arrays in the sensor regime are presented.

关键词： Thermoelectricity Thermoelectric devices Testing Silicon Germanium Superlattices sensor arrays Thermal sensors Nonhomogeneous media sensor phenomena and characterization

来源：评论

学校读者我要写书评

暂无评论

A low-cost 64/spl times/64 uncooled infrared detector array in standard CMOS

A low-cost 64/spl times/64 uncooled infrared detector array ...

引用

International conference on solid state sensors and Actuators (TRANSDUCERS)

作者： S. Eminoglu M.Y. Tanrikulu T. Akin Department of Electrical and Electronics Engineering Middle East Technical University Ankara Turkey

This paper reports the development of a low-cost, 64/spl times/64 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated p/sup +/-active/n-well diodes in a standard 0.35 /spl mu/m CMOS process. The array is implemented using a simple post-CMOS process that do not require any critical lithography or complicated deposition steps. The pixel is 40 /spl mu/m/spl times/40 /spl mu/m in size with a fill factor of 44%, and it has a measured DC responsivity of 4970 V/W with a thermal time constant of 36 msec at 80 mTorr vacuum. The detector noise is measured as 0.52 /spl mu/V for a 4 kHz electrical bandwidth with a 1/f corner frequency of 4.4 Hz, resulting in a measured detectivity of 9.7/spl times/10/sup 8/cm Hz/sup 1/2/W and an estimated NETD value of 470 mK for an f=1 optics. The FPA is scanned at 30 fps using a 16-channel parallel readout circuit with low noise preamplifiers. The preamplifiers have a measured noise of 0.48 /spl mu/V, resulting in an overall estimated NETD of 800 mK, which can be decreased by increasing the number of parallel readout channels. The uncompensated pixel voltage non-uniformity is measured as 0.82%, which easily decreases down to 0.05% by compensating the fixed pattern noise. Considering its simple fabrication method and its moderate performance, this approach is suitable for low-cost commercial infrared imaging applications.

关键词： Infrared detectors sensor arrays Noise measurement Optical noise Frequency measurement Electric variables measurement Frequency estimation Circuit noise Preamplifiers Diodes

来源：评论

学校读者我要写书评

暂无评论

development of Chemical sensor arrays for Harsh Environments and Aerospace applications

Development of Chemical Sensor Arrays for Harsh Environments...

引用

First IEEE International conference on sensors - IEEE sensors 2002

作者： Hunter, G.W. Neudeck, P.G. Makel, D. Liu, C.C. Ward, B. Wu, Q.H. Thomas, V. Dutta, P. Frank, M. Trimbol, J. Fulkerson, M. Patton, B. NASA Glenn Research Center Cleveland OH United States Makel Engineering Inc. Chico CA United States Electronics Design Center Case Western Reserve University Cleveland OH United States OAI Cleveland OH United States Ctr. for Indust. Sensors/Msrmt. Ohio State University Columbus OH United States

The aerospace industry requires the development of a range of chemical sensor technologies for such applications as fuel leak detection, fire detection, and emission monitoring. A range of chemical sensors are being developed based on: 1) Micromachining and microfabrication technology, 2) The use of nanocrystalline materials, and 3) The development of high temperature semiconductors, especially silicon carbide. However, due to issues of selectivity and cross-sensitivity, individual sensors are limited in the amount of information that they can provide in environments that contain multiple chemical species. Thus, sensor arrays are being developed to address detection needs in such multi-species environments. This paper discusses the sensor array development for harsh environment and aerospace applications such as leak and fire detection as well as emissions monitoring. Application of these arrays as well as their relative stage of development will be addressed.

关键词： Aerospace engineering

来源：评论

学校读者我要写书评

暂无评论

Indium Gallium Arsenide imaging with smaller cameras, higher resolution arrays, and greater material sensitivity

Indium Gallium Arsenide imaging with smaller cameras, higher...

引用

conference on Infrared Detectors and Focal Plane arrays VII

作者： Ettenberg, MH Cohen, MJ Brubaker, RM Lange, MJ O'Grady, MT Olsen, GH Sensors Unltd Inc Princeton NJ 08540 USA

ISBN: (纸本)0819444715

Indium Gallium Arsenide (InGaAs) photodiode arrays have numerous commercial, industrial, and military applications. During the past 10 years, great strides have been made in the development of these devices starting with simple 256-element linear photodiode arrays and progressing to the large 640 x 512 element area arrays now readily available. Linear arrays are offered with 512 elements on a 25 micron pitch with no defective pixels, and are used in spectroscopic monitors for wavelength division multiplexing (WDM) systems as well as in machine vision applications. A 320 x 240 solid-state array operates at room temperature, which allows development of a camera which is smaller than 25 cm(3) in volume, weighs less than 100 g and uses less than 750 mW of power. Two dimensional focal plane arrays and cameras have been manufactured with detectivity, D*, greater than 10(14)cm-rootHZ/W at room temperature and have demonstrated the ability to image at night. Cameras are also critical tools for the assembly and performance monitoring of optical switches and add-drop multiplexers in the telecommunications industry. These same cameras are used for the inspection of silicon wafers and fine art, laser beam profiling, and metals manufacturing. By varying the Indium content, InGaAs photodiode arrays can be tailored to cover the entire short-wave infrared spectrum from 1.0 micron to 2.5 microns. InGaAs focal plane arrays and cameras sensitive to 2.0 micron wavelength light are now available in 320 x 240 formats.

关键词： near-infrared InGaAs focal plane array camera high-resolution imaging Wavelength Division Multiplexing

来源：评论

学校读者我要写书评

暂无评论

Advanced imaging sensors at Rockwell Scientific Company

Advanced imaging sensors at Rockwell Scientific Company

引用

conference on Infrared Detectors and Focal Plane arrays VII

作者： Montroy, JT Garnett, JD Cabelli, SA Loose, M Joshi, A Hughes, G Kozlowski, L Haas, A Wong, S Zandian, M Chen, A Pasko, JG Farris, M Cabelli, CA Cooper, DE Arias, JM Bajaj, J Vural, K Rockwell Sci Co Camarillo CA 93012 USA

ISBN: (纸本)0819444715

The past 2 to 3 years has been a period of explosive growth in technology development for imaging sensors at Rockwell Scientific Co. (RSC). The state of the art has been advanced significantly, resulting in a number of unique advanced imaging sensor products. A few key examples are: 2048 x 2048 sensor chip assemblies (SCA) for ground and space-based applications, 4096 x 4096 mosaic close-butted mosaic FPA assemblies, a very high performance 10 x 1024 hybridized linear SCA for optical network monitoring and other applications, the revolutionary CMOS ProCam-HD(TM) imaging system-on-a-chip for high definition television (HDTV), and RSC's near-infrared emission microscope camera for VLSI defect detection/analysis. This paper provides selected updates of these products and thereby provides an overview of the ongoing highly fertile period of technology and product development at Rockwell Scientific. A view into future directions for advanced imaging sensors is also provided.

关键词： infrared detectors focal plane array sensor chip assembly astronomy HDTV

来源：评论

学校读者我要写书评

暂无评论

Recent advances in biologically sensitive field-effect transistors (BioFETs)

引用

ANALYST 2002年第9期127卷 1137-1151页

作者： Schöning, MJ Poghossian, A Univ Appl Sci Aachen D-52428 Julich Germany Forschungszentrum Julich Inst Thin Films & Interfaces D-52425 Julich Germany

Thirty years have elapsed since the invention of the ISFET by Bergveld. Since that time, various types of BioFETs have been developed using different biological recognition elements starting with enzymes and immunological species through DNA molecules to living cells and even living organisms. The study of the current state of BioFETs reveals that some BioFETs, like EnFETs are at a well-developed stage, whereas other BioFETs such as GenFETs and beetle/chip FETs are in the initial stages of development. There are still a number of fundamental and technological problems that must be overcome, before the first reliable BioFET-based bioanalytical microsystem will appear on the market. Therefore, intensive interdisciplinary research and cooperation of specialists from different disciplines is still required, not only in the field of biotechnology and bioengineer- ing but also in related disciplines, like informatics, solid-state physics, microtechnology, genetics as well as specific tech- niques such as sensor integration and packaging, interfacing circuits, etc. Hence, future prospects for BioFET developments can be expected in the following directions: (i) BioFETs utilising intact biological receptors (ion channel receptors, binding proteins, etc.) that bind specific drugs and reagents in such a way that they produce a conformational change in the protein structure. This conformational change, in turns, triggers a cellular response, (e.g., the opening of an ion channel of the membrane (so-called ion-channel switch biosensor); (ii) ISFET-based DNA chips can be considered as a new tool for the simultaneous analysis of thousands of nucleic acids with a broad area of potential applications in biomedical research and clinical diagnostics, genomics, drug screening, environmental monitor- ing and food industry. They combine both the possibility of direct DNA hybridisation detection without the use of labelled probes and the large integration ability of these active microelect

关键词： Glucose Oxidase chemical analysis micro total analysis systems Field effect transistors Biosensors signal acquisition biological organs hybrid systems Electronic Nose Oxygen electrodes sensor arrays Si technology

来源：评论

学校读者我要写书评

暂无评论

Progress in III-nitride based white light sources

Progress in III-nitride based white light sources

引用

2nd conference on solid state Lighting

作者： Gaska, R Zukauskas, A Shur, MS Khan, MA Sensor Elect Technol Inc Latham NY 12110 USA

ISBN: (纸本)0819445436

We review two complementary approaches to the development of white light solid-state sources. The first approach, which involves polychromatic LED modules, is targeted at advanced optimization of spectral power distribution in order to establish an optimal trade-off between luminous efficacy and color rendering. We apply a stochastic method of optimization of a white-light source that relies on additive color mixing of the emissions from colored primary LEDs. We present the results on optimized spectra for all-semiconductor lamps composed of four primary LEDs with the line widths typical of present AlGaInP and AlInGaN technologies. We point out the problem of the lack of efficient yellow-green (570 nm) emitters required for polychromatic lamps with four and more primary LEDs. The second approach is based on the development of AlInGaN-based UV emitters that can be tailored to directly excite different phosphors without sensitizers. AlInGaN materials system demonstrated potential for making UV LEDs with a high power and short wavelengths required for such applications. This has been achieved by using Strain Energy Band Engineering (SEBE) and Pulsed Atomic Epitaxy (PALE) techniques. SEBE relies on quaternary AlGaInN compounds for controlling strain and band offset and for producing UV emitters with improved device performance. PALE allows us to incorporate the required significant amount of indium (few percent) in AlGaN, since it can be performed at lower growth temperatures required for In incorporation. Further improvements in materials quality of AlInGaN layers with a high molar fraction of Al will be achieved by using bulk AIN substrates.

关键词： solid-state lighting white solid-state lamp color mixing optimization UV light emitting diodes phosphor conversion

来源：评论

学校读者我要写书评

暂无评论

Fabrication and properties of ultrasmall Si wire arrays with circuits by vapor-liquid-solid growth

Fabrication and properties of ultrasmall Si wire arrays with...

引用

Transducers 2001 conference/Eurosensor XVth conference

作者： Kawano, T Kato, Y Futagawa, M Takao, H Sawada, K Ishida, M Toyohashi Univ Technol Dept Elect & Elect Engn Toyohashi Aichi 4418580 Japan

A micro-Si wire probe array chip with on-chip circuits has been developed for the applications on multichannel electrodes of neuroelectronic interface systems. Selective Au-Si2H6 vapor-liquid-solid (VLS) growth method provides a successful Si probe array on Si(1 1 1) wafers in predetermined positions and probe sizes. Si probes with 160 mum in length and 3.5 mum in diameter at tip were grown for 2 h at 700 degreesC. Moreover, the circular cone type shape of the Si probes was controlled by changing the Si2H6 gas pressures in the VLS growth. After wiring process for on-chip circuits on Si(1 1 1) wafers, the Si probes were grown perpendicular to the wafer surface by the VLS growth process. Conductivity of Si probes was controlled by using phosphorous diffusion, resulting in a resistivity of 10(-2) Omega . cm from 10(4) Omega . cm at a diffusion temperature of 1100 degreesC. In in vivo studies, penetrating micro-probe array with low impedance such as the VLS grown Si probes has been desired. Using the VLS grown Si probes, these electrical signals was detected successfully. (C) 2002 Elsevier Science B.V All rights reserved.

关键词： smart neural activity recording sensor penetrating type electrode array vapor-liquid-solid growth micro-Si probe array chip neural interface

来源：评论

学校读者我要写书评

暂无评论

Large-area, flexible macroelectronics

Large-area, flexible macroelectronics

引用

15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society

作者： Reuss, R Microsystems Technology Oflice Defense Advanced Research Project Agency USA

ISBN: (纸本)0780375009

Summary form only given. Based on the success of amorphous silicon TFTs in both solar cells and AMLCDs, and with the imminent penetration of OLEDs into display applications, macroelectronics has now become a standalone field of electronics research. The emphasis in this paper is on materials and material related issues in the development of large area and/or flexible electronics. We highlight areas that are important for the successful implementation of electronics the utility of which stems not from small dimensions, but from other physical attributes such as form factor and cost. Materials of interest include both Si based and organic FET technologies. While displays are perhaps the best-known example of applications for such materials, our focus is on other potential applications such as smart cards, RF tags, and sensor array networks. This paper assesses the state of the art with regard to achievement of the goals of flexible electronics for specific systems that offer novel operational capabilities.

关键词： sensor arrays Flexible electronics Amorphous silicon Photovoltaic cells Active matrix liquid crystal displays Organic light emitting diodes Flat panel displays Costs Organic materials FETs

来源：评论

学校读者我要写书评

暂无评论

Integrated semiconductor fluorescent detection system for biochip and biomedical applications

Integrated semiconductor fluorescent detection system for bi...

引用

conference on Biomedical Nanotechnology Architectures and applications

作者： Thrush, E Levi, O Wang, K Wistey, MA Harris, JS Smith, SJ Stanford Univ Solid State & Photon Lab Stanford CA 94305 USA

ISBN: (纸本)0819443654

As biological analysis systems scale to smaller dimensions, the realization of small and portable biosensors becomes increasingly important. The innovation of integrated fluorescence sensors is now possible due to the development of optoelectronics over the past decade. We present the monolithic integration of vertical cavity surface emitting lasers (VCSELs), PIN photo-detectors and optical emission filters to be used as a fluorescence sensor. The integration will drastically reduce cost and size of fluorescence detection systems. Also, parallel sensing architectures of more than one hundred channels will be possible. The sensor will be utilized for near-infrared fluorescence detection. This spectral range is compatible with standard AlGaAs optoelectronic technology and will also reduce background fluorescence from complex bio-fluids such as blood. PIN heterostructure photodetectors have been fabricated and tested. Photodetector experiments show extremely low dark current of less than 500fA/mm, quantum efficiency greater than 85 percent and linear detector response. Optical simulations have been preformed to evaluate the performance of a proximity sensing architecture. These simulations predict a detection sensitivity lower than 10000 fluorescent molecules in a detection area of 10(4) mum(2).

关键词： biochips fluorescence sensors infrared dyes VCSELs semiconductor lasers photodetectors AIGaAs

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：