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conference on solid state sensor arrays - development and applications II

作者： Hoekstra, W van der Avoird, A Kole, M Schrooten, GG Schaeffer, CJ Philips Imaging Technol Eindhoven Netherlands

ISBN: (纸本)0819427411

In image sensors with passive pixels the column capacitance is large compared to the capacitance of the pixel. The charge-to-voltage conversion occurs in the column amplifier relatively far from the pixel. This may result in a high sensitivity to interference, especially in case other electronic circuitry is located on the same chip. Two types of CIF CMOS imagers are presented that use different read-out options to counter this effect. Both designs use differential read-out as DRAM's do. This means that the pixel is compared to a reference cell. The first type uses a reference cell on the same row;the second type utilizes a fully symmetrical way of read-out, similar to digital memories by having its reference on the same column. Furthermore, two other means of image quality improvement are applied. A boost circuit is used to generate a negative voltage for driving the selecting transistor to insure that it is completely switched on during pixel reset. By this, threshold differences between pixels do not affect the reset voltage. The second is a well thought-out column amplifier that calibrates its offset before reading the pixel information.

关键词： Image sensors

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A time delay and integration image sensor with high speed output architecture

A time delay and integration image sensor with high speed ou...

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conference on solid state sensor arrays - development and applications II

作者： Weale, GP Flood, CJ Dykaar, DR DALSA Inc Waterloo ON N2V 2E9 Canada

ISBN: (纸本)0819427411

Today's imaging systems utilize fast operation to increase their throughput. At high line rates the illumination required to collect a reasonable image becomes prohibitive. Time delay and integration (TDI) offers greatly enhanced responsivity to allow faster operation in terms of line rates. This combination of sensitivity and speed is unmatched in other sensor architectures. The standard multi-stage source follower output amplifier usually involves a trade off between speed and sensitivity through sizing of the first FET. We present a high bandwidth (>250 MHz) and sensitivity (>5 mu V/e), scaleable architecture for readout of TDI sensors. A key component of this architecture is the minimization of output amplifier load and parasitic capacitance. The methodologies used in the design and modeling of the output structure will be presented. This basic model has been confirmed over a range of device dimensions. A 4096 element, multi-tap TDI image sensor incorporating this architecture has been fabricated using a standard CCD process. Discrete and in-camera measurements will be presented demonstrating operation at >100 kHz line rates and with >300 V/(mu J/cm(2)) peak responsivity. Methods of controlling and reducing the stray loading on the sensor output will also be discussed.

关键词： CCD charge coupled device high speed output TDI

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Design and characterization of CMOS APS imagers on two different technologies

Design and characterization of CMOS APS imagers on two diffe...

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conference on solid state sensor arrays - development and applications II

作者： Cavadore, C Solhusvik, J Magnan, P Gautrand, A Degerli, Y Lavernhe, F Farre, J Saint-Pe, O Davancens, R Tulet, M SUPAERO Dept Elect F-31055 Toulouse 4 France

ISBN: (纸本)0819427411

In this paper, we present experimental results from measurements on CMOS APS imager designed by CIMI-SUPAERO on two different technologies. In both cases, pixels with photoMos and photodiode structures have been designed. The first circuit has been developed using a standard CMOS DLP/DLM 1.2 mu m process from Austria Micro Systems. The detector array consists of 32x32 square pixels with 50 mu m pixel pitch;fill factor is 75 % for photodiode (PD) and 50 % for photoMos (PM). The circuit is also including row and column address decoders and the readout circuitry so as to perform on-chip correlated double-delta sampling to reduce column to column fixed pattern noise. Two other chips have been developed with a standard CMOS SLP/DLM process from MIETEC with 0.7 mu m design rules, which includes a 128x128 pixels array, with 21 mu m pixel pitch and analogue readout circuitry. Among 10 different arrays, no faulty one was observed for both circuits. In this paper, we compare both performances of 32x32 pixels and 128x128 pixels in terms of dark current, quantum efficiency, conversion gain, dynamic range, linearity and spatial uniformity.

关键词： Active Pixel sensor APS CMOS image sensors characterisation

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Large format CID x-ray image sensor

Large format CID x-ray image sensor

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conference on solid state sensor arrays - development and applications II

作者： Carbone, J Alam, Z Borman, C Czebiniak, S Ziegler, H CIDTEC Liverpool NY 13088 USA

ISBN: (纸本)0819427411

A large format (31 x 23 mm(2) display) CID imager module capitalizes on CID large well capacity and radiation resistance to image dental x-rays. The module, which consists of the imager, conversion phosphor and ancillary electronics, is encapsulated in a 40 x 28 x 5 mm(3) robust package that is lightproof, moisture-proof and meets FDA and RFL/EMI standards. Data exposure and readout is simple. The imager normally exists in an active reset mode until X-ray application automatically places the imager into a charge integration mode. Readout begins immediately upon completion of the x-ray exposure or manual application of an external trigger source. The imager returns to the reset mode once the data read out is complete. Pixels are arranged in an SVGA compatible 800(H) x 600(V) format. Each pixel is square and 38.5 microns/side. The imager is coated using a proprietary phosphor deposition process that results in a limiting resolution of 9 LP/mm from an X-ray illumination source. Better than 2,000:1 dynamic range and shot-noise limited operation is achieved. Direct X-ray detection and attendant noise is minimized via the phosphor and epitaxial layer that lies beneath the pixel array. The imager/module architecture and electro-optical performance are described in detail here in.

关键词： CIDs dental X-ray electronic imaging radiation-hardened charge transfer device

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Charge-transfer-efficiency (CTE) measurement techniques applied to proton-irradiated, linear charge-coupled devices

Charge-transfer-efficiency (CTE) measurement techniques appl...

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conference on solid state sensor arrays - development and applications II

作者： Dutton, TE Woodward, WF Lomheim, TS Aerospace Corp Sensor Syst Subdiv Los Angeles CA 90009 USA

ISBN: (纸本)0819427411

Charge-Transfer-Efficiency (CTE) is a parameter that is associated with the optical performance and radiometric accuracy of a Charge-Coupled Device (CCD). While modern CCD's are typically quoted as having CTE>0.99999, we show that a) this efficiency can be degraded by exposure to energetic protons and b) the measured efficiency, at least in the case of irradiated devices, is dependent on the size of the signal being transferred. A comparison of two techniques of CTE measurement is presented, with emphasis on an Fe-55 X-ray charge-generation and collection technique tailored especially for use with linear CCD's. While our technique follows the same general X-ray method widely used to characterize area CCD's, its implementation, including the processing of the resulting experimental data, is somewhat novel. The X-ray technique requires no special device circuitry or equipment and, in our configuration, may be used on virtually any linear or bilinear CCD;the same general technique is used on area arrays. It is shown that the technique is appropriate for characterizing small-signal CTE with or without a high background. It is also shown that the electrical injection CTE, while requiring the injection circuitry to be designed and built-in to the CCD structure, is more appropriate for large-signal CTE measurement. Data are presented showing experimental pre-and post-irradiation CTE measured as a function of signal level and background level for a two-phase linear CCD. Additionally, it is shown that in our tests, the CTE degraded even at very small accelerated doses (<10 kRad(Si) of ionizing proton dose), but further degradation was at least partly compensated by an enhanced background due to increasing dark currents.

关键词： charge transfer efficiency CTE X-ray charge coupled device CCD electrical injection proton irradiation

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A high speed linear CCD sensor with pinned photodiode photosite for low lag and low noise imaging

A high speed linear CCD sensor with pinned photodiode photos...

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conference on solid state sensor arrays - development and applications II

作者： Fox, EC Nixon, O Agwani, MS Dykaar, DR Mantell, TJ Sabila, RW DALSA Inc Waterloo ON N2V 2E9 Canada

ISBN: (纸本)0819427411

Photodiode devices, in which the photosite consists of a reverse biased pn diode, have excellent quantum efficiencies at visible wavelengths and in the UV. However they display high levels of dark and bright image lag, and high levels of fixed pattern noise (FPN) when operated with electronic shuttering (exposure control). We have addressed these performance issues by replacing the photodiode photosites with pinned photodiode (PPD) photosites. In the PPD the n+ region of the conventional photodiode is replaced by a n region and a shallow highly doped p region - the surface potential in the photosite is pinned such that the photosite behaves as an ungated buried channel well. The high quantum efficiencies associated with photodiodes are maintained while allowing for large reductions in image lag and fixed pattern noise. We have developed PPD processes for two different photosite architectures. In the first architecture, charge is generated in the PPD and immediately spills to an adjacent gated integration well. In the second architecture, the charge is generated and stored in the PPD. Each of the architectures can be configured to allow for antiblooming/electronic shuttering. Both of the PPD processes and their associated architectures have been characterized, and order of magnitude reductions in image lag have been observed for PPD photosites relative to conventional photodiodes. No degradation in QE, PRNU, or well capacity has been observed. One of the PPD processes has been implemented in a family of high speed, quad output, linear sensors with 100 MHz data rates. Performance results are presented.

关键词： CCD charge coupled device PPD pinned photodiode high speed low noise

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Study of pixel structure and layout for CMOS Active Pixel Image sensor

Study of pixel structure and layout for CMOS Active Pixel Im...

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conference on solid state sensor arrays - development and applications II

作者： Iida, Y Oba, E Mabuchi, K Nakamura, N Yamaguchi, T Ihara, H Nozaki, H Toshiba Ctr Res & Dev Adv Semicond Devices Res Labs Kawasaki Kanagawa Japan

ISBN: (纸本)0819427411

Shrinkage of pixel structures and layouts for CMOS Active Pixel Image sensors (APS's) are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using minimum design rule, quarter micron rule or sub quarter micron rule, costs expensive. Therefore, pixel size shrinkage using relatively rough design rule have been studied for reduction of the chip cost. We have already reported about small pixel structure by replacement of row-select transistor by row-select capacitor, by omission of reset transistor with forward bias reset operation, and by omission of reset transistor with pinned-buried reset channel. We have also reported about small pixel by high packing density layout named "I-shaped cell" and its zigzag layout. However, these pixel shrinkage have some disadvantages. In this paper, we propose a novel pixel structure driven by pulse operation of drain line for row select and reset. Conventional row select structure, row select transistor or row select capacitor, is omitted by the row-select channel that contains low impurity concentration and has no gate structure. Moreover, conventional reset transistor is also replaced by reset channel structure in like manner. These structures and triple level pulse operation of drain realize quite simple pixel structure in which amplification transistor is the only gate structure. A large fill factor of 37% is obtained by this structure, in 5.6 mu m x 5.6 mu m pixel designed by 0.7 mu m rule.

关键词： CMOS Active Pixel Image sensor (APS) pixel layout photodiode fill factor simulation

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An integrated resonant accelerometer microsystem for automotive applications

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sensorS AND ACTUATORS A-PHYSICAL 1998年第1-3期66卷 99-104页

作者： Ohlckers, P Holm, R Jakobsen, H Kvisteroy, T Kittilsland, G Larsen, A Nese, M Nilsen, SM Ferber, A SensoNor N-3191 Horten Norway SINTEF Elect & Cybernet N-0314 Oslo Norway

In the project IRMA-EU (IRMA: integrated resonant accelerometer microsystem for automotive applications). a project sponsored by the European Commision under ESPRIT, SensoNor and project partners Autoliv and SINTEF are developing a resonant-structure two-chip accelerometer silicon microsystem for automotive applications, the SA30 Crash sensor for front impacts, with range +/- 50g. The project is focusing on the development of key process technologies, product designs and manufacture of functional prototypes. The IRMA project is coordinated wi th other activities performed by the partners to cover all aspects of research and technology development as well as establishment of high-volume production capabilities needed for successful product innovation of this new generation of crash sensors. The sensing principle is an acceleration-sensitive resonant structure, with an ASIC for resonance control and signal conditioning. Prototypes in silicon of both the sensor chip and the ASIC chip have confirmed the feasibility of the concept. Ramp up to high-volume production will be started as soon as fully functional microsystems are demonstrated. (C) 1998 Elsevier Science S.A. All rights reserved.

关键词： crash sensors resonant structures silicon microsystems

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Light emitting diode arrays for consumer and medical applications

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MATERIALS SCIENCE AND ENGINEERING B-solid state MATERIALS FOR ADVANCED TECHNOLOGY 1998年第1-3期51卷 90-93页

作者： Rys, A Piotrowski, T Sobczynski, R Kansas State Univ Dept Elect & Comp Engn Manhattan KS 66506 USA Inst Electron Technol PL-02668 Warsaw Poland Hadaspectrum PL-04831 Warsaw Poland

development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in the design and fabrication of surface emitting infrared LEDs in the spectral range from 1100 to 1650 nm. Custom made chips provide the surface-emitting LEDs with high radiance and superior far-field patterns. The hybrid 31-element array of LEDs was fabricated. A temperature sensor and a photodiode was incorporated on the hybrid circuit to control the temperature and light intensity of the diodes. The instrument prototype has been fabricated and preliminary experimental data have been collected. (C) 1998 Elsevier Science S.A. All rights reserved.

关键词： infrared light emitting diodes electrical contacts spectrometer hybrid circuits

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Field emitter array development for high frequency applications

Field emitter array development for high frequency applicati...

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10th International Vacuum Microelectronics conference (IVMC 97)

作者： Jensen, KL Abrams, RH Parker, RK USN Res Lab Div Elect Sci & Technol Washington DC 20375 USA

ISBN: (纸本)0780337867

Radio frequency vacuum microelectronics combines the advantages of electron transport in vacuum with gated electron emission structures derived from solid-state microfabrication. The advent of practical gated vacuum emitters of micron size will have a strong impact on rf source technology. Next-generation rf amplifiers incorporating microfabricated emitters will allow amplifier designs that minimize the need for high-voltage power supplies, complex modulating circuitry, and the heavy magnets common with linear beam tubes. One attractive application for such efficient compact amplifiers is as the vacuum power booster of a microwave power module, a device that combines a solid-state preamplifier with a low-gain vacuum amplifier for efficiency. Program goals are to create a 50 W 10 GHz amplifier with 10 dB gain and efficiency exceeding 50%. We will survey the requirements placed on field emitter arrays for performance in a microwave amplifier as determined by various analyses, describe the present status of the performance of ring cathodes designed for inductive output amplifiers, i.e., the narrow-band, cavity-based klystrode under development at Varian/CPI and the wide-band, helix-based twystrode under development at NRL, and identify the challenges that remain before this new rf source technology is realized. [S0734-211X(98)02702-4].

关键词： Field emission cathodes

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