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conference on solid state sensor arrays - development and applications II

作者： Carbone, J Alam, Z Borman, C Czebiniak, S Ziegler, H CIDTEC Liverpool NY 13088 USA

ISBN: (纸本)0819427411

A large format (31 x 23 mm(2) display) CID imager module capitalizes on CID large well capacity and radiation resistance to image dental x-rays. The module, which consists of the imager, conversion phosphor and ancillary electronics, is encapsulated in a 40 x 28 x 5 mm(3) robust package that is lightproof, moisture-proof and meets FDA and RFL/EMI standards. Data exposure and readout is simple. The imager normally exists in an active reset mode until X-ray application automatically places the imager into a charge integration mode. Readout begins immediately upon completion of the x-ray exposure or manual application of an external trigger source. The imager returns to the reset mode once the data read out is complete. Pixels are arranged in an SVGA compatible 800(H) x 600(V) format. Each pixel is square and 38.5 microns/side. The imager is coated using a proprietary phosphor deposition process that results in a limiting resolution of 9 LP/mm from an X-ray illumination source. Better than 2,000:1 dynamic range and shot-noise limited operation is achieved. Direct X-ray detection and attendant noise is minimized via the phosphor and epitaxial layer that lies beneath the pixel array. The imager/module architecture and electro-optical performance are described in detail here in.

关键词： CIDs dental X-ray electronic imaging radiation-hardened charge transfer device

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Greater than 90% QE in visible spectrum perceptible from UV to near IR Hamamatsu thinned back illuminated CCD's

Greater than 90% QE in visible spectrum perceptible from UV ...

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conference on solid state sensor arrays - development and applications

作者： Muramatsu, M Akahori, H Shibayama, K Nakamura, S Yamamoto, K Hamamatsu Photonics KK (Japan)

ISBN: (纸本)0819424307

CCD's feature low amplifier noise, high sensitivity and wide dynamic range. Therefore, CCD's have been used in such diverse applications as general purpose imaging, industrial inspection, medical diagnostics and astrophysics [1][2]. For each application, a suitable image area, optical characteristics, electrical characteristics and even appropriate package must be required[3]. Among these, back illuminated CCD's have enhanced sensitivity for UV light, soft X-rays and electrons. Hamamatsu Photonics K.K. has developed FFT, MPP mode back illuminated CCD's optimized for spectroscopy. For spectroscopic applications, CCD's should have responsivity from the UV to near-iii as well as having low dark current and wide dynamic range in the binning mode. Stability of the spectral response curve is also important to achieve high precision measurements.

关键词： spectroscopic applications signal-to-noise ratio full-well capacity spectral range quantum efficiency backside thinning rim support grown oxide high temperature annealing flip-chip bonding

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MOS AREA sensor .2. LOW-NOISE MOS AREA sensor WITH ANTIBLOOMING PHOTO-DIODES

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IEEE JOURNAL OF solid-state CIRCUITS 1980年第4期15卷 747-752页

作者： OHBA, S NAKAI, M ANDO, H HANAMURA, S SHIMADA, S SATOH, K TAKAHASHI, K KUBO, M FUJITA, T HITACHI LTD MUSASHI WORKSKOKUBUNJITOKYO 185JAPAN HITACHI LTD MOBARA WORKSCHIBAJAPAN

The development of a high-sensitivity 320 X 244 element MOS area sensor and a novel fixed pattern noise (FPN) suppressing circuit are reported in this paper. The new device incorporates p/sup +/-n/sup +/ high-C photodiodes and double-diffused sense lines. The p/sup +/-n/sup +/ high-C photodiodes provide a large dynamic range and a large saturation signat of 1.4 /spl mu/A with 6-1x W-lamp illumination. The double-diffused sense lines are introduced to vastly improve blooming characteristics, making use of a built-in potential barrier. FPN is proved to stem mainly from inversion charge variations through horizontal switching MOS gate capacitances. A simple high-performance FPN suppressing circuit is proposed which realizes high signal-to-noise (S/N) ratios of more than 68 dB at saturation. The new sensor is tested in a high-sensitivity black-and-white VTR hand-held camera and will find broad applications.

关键词： Photodiodes sensor phenomena and characterization Video recording Cameras sensor arrays Dynamic range Capacitance Circuit testing Image sensors MOSFETs

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Image sensing with programmable offset pixels for increased dynamic range of more than 150 dB

Image sensing with programmable offset pixels for increased ...

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conference on solid state sensor arrays and CCD Cameras

作者： Vietze, O Seitz, P PAUL SCHERRER INST CH-8048 ZURICHSWITZERLAND

ISBN: (纸本)081942028X

A novel CMOS active pixel sensor structure has been designed, fabricated and characterized. It greatly increases the working range for all imaging applications in which the optical signal information to be detected is superimposed on a large DC offset signal. This is achieved by subtracting an offset current at each pixel's photosite. The offset current can be programmed individually by an external programming voltage. Experimental results from a single pixel test-cell fabricated on a standard 2 (mu) CMOS-process show a programmable offset signal range of > 150 dB with a dynamic range of > 60 dB of the photo detector itself. To achieve a similar performance using conventional imaging techniques would require an imager with a dynamic range of > 150 dB.

关键词： photodetector offset pixel imager active pixel sensor increased dynamic range

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Microfabricated potentiometric solid-state ion/biosensor arrays

Microfabricated potentiometric solid-state ion/biosensor arr...

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作者： Liu, Dong University of Michigan

学位级别：Ph.D.

There has been great interest in the development of solid-state potentiometric ion/biosensors, in which ion-selective polymer membranes are cast directly on solid-state conducting sites with no internal reference electrolyte. Microfabricated solid-state sensor arrays based on silicon wafers can be used either as single-use disposable devices or as reversible multisensing electrochemical detectors in the flow-through systems. In this work, a novel four-site potentiometric solid-state ion sensor array (prepared to detect $\rm K\sp+, NH\sb4\sp+, Ca\sp{2+}$ and pH) was fabricated by screen-printing appropriate ionophore doped polymer membranes on a silicon wafer with Ag-epoxy as the inner conductor. The resulting sensor array was employed as a detector in a flow-injection analysis system. The use of silicone rubber and polyurethane as polymer matrices resulted in much better membrane adhesion to the silicon wafer when compared to conventional poly(vinyl chloride) films. The EMF stability of potentiometric solid-state sensors is crucial for practical analytical applications. EMF stability was greatly improved via the incorporation of a silver-ligand complex into the ion-selective polymer matrix. Different types of plasticizers and polymer water uptake were also found to contribute to the initial potential drift (from dry to wet) of the solid-state sensors. With optimized plasticizer (2-ethylhexyl diphenyl phosphate) and a well-established electron transfer pair ((1,3-bis(diphenylphosphino)-propane) silver(I) nitrate) at the polymer membrane/Ag$\sp0$ conductor interface, a very stable potentiometric ion-selective response was achieved. A new asymmetric membrane system with improved surface properties for preparation of conventional and solid-state type potentiometric biosensors is also reported. The amine functional groups on the modified ion-selective membrane surface can be used advantageously to covalently attach bioreagents. Other enzyme immobilization methods, such a

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Fully Integrated Multiplexed Wristwatch for Real-Time Monitoring of Electrolyte Ions in Sweat

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ACS NANO 2024年第20期18卷 12808-12819页

作者： Cai, Xin Xia, Rui-Ze Liu, Zi-Hao Dai, Hai-Hua Zhao, Yong-Huan Chen, Shi-Hua Yang, Meng Li, Pei-Hua Huang, Xing-Jiu Chinese Acad Sci Inst Solid State Phys Key Lab Environm Opt & Technol HFIPS Hefei 230031 Peoples R China Chinese Acad Sci Inst Solid State Phys Environm Mat & Pollut Control Lab HFIPS Hefei 230031 Peoples R China Univ Sci & Technol China Dept Mat Sci & Engn Hefei 230026 Peoples R China Chinese Acad Sci State Key Lab Transducer Technol Shanghai Inst Microsyst & Informat Technol Shanghai 200050 Peoples R China Hefei Comprehens Natl Sci Ctr Inst Environm Hefei 230088 Peoples R China

Considerable progress has already been made in sweat sensors based on electrochemical methods to realize real-time monitoring of biomarkers. However, realizing long-term monitoring of multiple targets at the atomic level remains extremely challenging, in terms of designing stable solid contact (SC) interfaces and fully integrating multiple modules for large-scale applications of sweat sensors. Herein, a fully integrated wristwatch was designed using mass-manufactured sensor arrays based on hierarchical multilayer-pore cross-linked N-doped porous carbon coated by reduced graphene oxide (NPCs@rGO-950) microspheres with high hydrophobicity as core SC, and highly selective monitoring simultaneously for K+, Na+, and Ca2+ ions in human sweat was achieved, exhibiting near-Nernst responses almost without forming an interfacial water layer. Combined with computed tomography, solid-solid interface potential diffusion simulation results reveal extremely low interface diffusion potential and high interface capacitance (598 mu F), ensuring the excellent potential stability, reversibility, repeatability, and selectivity of sensor arrays. The developed highly integrated-multiplexed wristwatch with multiple modules, including SC, sensor array, microfluidic chip, signal transduction, signal processing, and data visualization, achieved reliable real-time monitoring for K+, Na+, and Ca2+ ion concentrations in sweat. Ingenious material design, scalable sensor fabrication, and electrical integration of multimodule wearables lay the foundation for developing reliable sweat-sensing systems for health monitoring.

关键词： graphene solid contact ion selective electrodes sweat sensing electrolyte real-time monitoring

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Study of pixel structure and layout for CMOS Active Pixel Image sensor

Study of pixel structure and layout for CMOS Active Pixel Im...

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conference on solid state sensor arrays - development and applications II

作者： Iida, Y Oba, E Mabuchi, K Nakamura, N Yamaguchi, T Ihara, H Nozaki, H Toshiba Ctr Res & Dev Adv Semicond Devices Res Labs Kawasaki Kanagawa Japan

ISBN: (纸本)0819427411

Shrinkage of pixel structures and layouts for CMOS Active Pixel Image sensors (APS's) are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using minimum design rule, quarter micron rule or sub quarter micron rule, costs expensive. Therefore, pixel size shrinkage using relatively rough design rule have been studied for reduction of the chip cost. We have already reported about small pixel structure by replacement of row-select transistor by row-select capacitor, by omission of reset transistor with forward bias reset operation, and by omission of reset transistor with pinned-buried reset channel. We have also reported about small pixel by high packing density layout named "I-shaped cell" and its zigzag layout. However, these pixel shrinkage have some disadvantages. In this paper, we propose a novel pixel structure driven by pulse operation of drain line for row select and reset. Conventional row select structure, row select transistor or row select capacitor, is omitted by the row-select channel that contains low impurity concentration and has no gate structure. Moreover, conventional reset transistor is also replaced by reset channel structure in like manner. These structures and triple level pulse operation of drain realize quite simple pixel structure in which amplification transistor is the only gate structure. A large fill factor of 37% is obtained by this structure, in 5.6 mu m x 5.6 mu m pixel designed by 0.7 mu m rule.

关键词： CMOS Active Pixel Image sensor (APS) pixel layout photodiode fill factor simulation

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Application of Schottky barrier bolometer arrays to cooled sensors

Application of Schottky barrier bolometer arrays to cooled s...

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conference on Infrared Technology and applications XXVI

作者： Shepherd, FD Murguia, JE Solid State Sci Corp Hollis NH 03049 USA

ISBN: (纸本)0819437751

We describe a model for cooled thermal imaging sensors, based on silicon Schottky diode bolometer arrays. The sensing mechanism is the modulation of Schottky diode dark current with temperature. The proposed array is identical to Schottky diode arrays, which would be used for uncooled thermal imaging, except for a change of the sensing electrode metal. We separate the thermal and electrical response of the detector elements and discuss sensor limitations related to detector thermal isolation. At a 180 K operating temperature, we project NEDT's in the 3 to 20 mK range, depending upon system f/number. A 20 cm aperture sensor based on this technology should have a noise equivalent power below 10(-11) watts.

关键词： cooled sensors infrared imaging bolometer arrays thermionic emission

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FABRICATION PROCEDURES OF PHOTOVOLTAIC LEAD-CHALCOGENIDE-ON-SILICON INFRARED-sensor arrays FOR THERMAL IMAGING 21

FABRICATION PROCEDURES OF PHOTOVOLTAIC LEAD-CHALCOGENIDE-ON-...

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21ST EUROPEAN solid state DEVICE RESEARCH CONF ( ESSDERC 91 )

作者： HOSHINO, T ZOGG, H MAISSEN, C MASEK, J BLUNIER, S AFIF (Arbeitsgemeinschaft für Industrielle Forschung) Swiss Federal Institute of Technology ETH Hönggerberg Zürich CH-8093 Switzerland

ISBN: (纸本)0444890661

Epitaxial Pb1-xSnxSe layers have been grown onto Si(111) substrates with the aid of an intermediate CaF2/BaF2 buffer layer by MBE. Photovoltaic infrared sensor arrays with up to 256 elements for thermal imaging applications have been fabricated in the narrow gap lead chalcogenide layers. The whole growth and fabrication procedure was done al temperatures never exceeding 450-degrees-C on Si substrates containing prefabricated integrated circuits with standard Al-metallization for the first time.

关键词： Fluorspar

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RESEARCH AND development ON MEMS BASED ELECTRIC FIELD sensor 21

RESEARCH AND DEVELOPMENT ON MEMS BASED ELECTRIC FIELD SENSOR

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21st International conference on solid-state sensors, Actuators and Microsystems (Transducers)

作者： Xia, Shanhong Lei, Hucheng Liu, Jun Peng, Simin Peng, Chunrong Yang, Pengfei Wen, Xiaolong Chu, Zhaozhi Chinese Acad Sci Aerosp Informat Res Inst State Key Lab Transducer Technol Beijing 100190 Peoples R China Beijing TFlying Transducer Technol Co Ltd Beijing Peoples R China Beijing Inst Collaborat Innovat Beijing Peoples R China Univ Chinese Acad Sci Beijing Peoples R China Beijing Informat Sci & Technol Univ Beijing 100192 Peoples R China Univ Sci & Technol Beijing Beijing 100083 Peoples R China Chinese Acad Sci Inst Microelect Beijing Peoples R China

ISBN: (纸本)9780738125626

Electric field sensors are widely used in many fields. MEMS based electric field sensor has the advantages of small size, light weight and low power consumption. It can not only be used to upgrade the traditional electric field detection equipment, but also meet the needs for a lot of new applications. This presentation will review briefly the research and development of MEMS based electric field sensors, report the work and progress of the author's team, provide examples of practical applications, prospect for the future work and potential new applications, and discuss about the difficulties and problems.

关键词： electric field sensor micro sensor MEMS

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