This paper reports the development of a low-cost, 64/spl times/64 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated p/sup +/-active/n-well diodes in a standard 0.35 /spl mu/m CMOS pro...
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This paper reports the development of a low-cost, 64/spl times/64 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated p/sup +/-active/n-well diodes in a standard 0.35 /spl mu/m CMOS process. The array is implemented using a simple post-CMOS process that do not require any critical lithography or complicated deposition steps. The pixel is 40 /spl mu/m/spl times/40 /spl mu/m in size with a fill factor of 44%, and it has a measured DC responsivity of 4970 V/W with a thermal time constant of 36 msec at 80 mTorr vacuum. The detector noise is measured as 0.52 /spl mu/V for a 4 kHz electrical bandwidth with a 1/f corner frequency of 4.4 Hz, resulting in a measured detectivity of 9.7/spl times/10/sup 8/cm Hz/sup 1/2/W and an estimated NETD value of 470 mK for an f=1 optics. The FPA is scanned at 30 fps using a 16-channel parallel readout circuit with low noise preamplifiers. The preamplifiers have a measured noise of 0.48 /spl mu/V, resulting in an overall estimated NETD of 800 mK, which can be decreased by increasing the number of parallel readout channels. The uncompensated pixel voltage non-uniformity is measured as 0.82%, which easily decreases down to 0.05% by compensating the fixed pattern noise. Considering its simple fabrication method and its moderate performance, this approach is suitable for low-cost commercial infrared imaging applications.
We present some additional results obtained with the BETAview system, a digital system for real time /spl beta/-imaging based on semiconductor pixel detectors and on a single photon counting read-out chip. In this pap...
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We present some additional results obtained with the BETAview system, a digital system for real time /spl beta/-imaging based on semiconductor pixel detectors and on a single photon counting read-out chip. In this paper, we describe the system assembled with a Si detector, 300 /spl mu/m thick, segmented into 64/spl times/64 square pixels with 170 /spl mu/m pitch. The solidstate pixel array detector is bump-bonded pixel by pixel to a low threshold, single particle counting electronics, the photon counting chip (PCC) developed by the Medipix1Collaboration for biomedical applications. Each cell (corresponding to a detector pixel) of the front-end chip has a maximum count rate of 2 MHz, a minimum nominal threshold of 1400 e~ (corresponding to about 5 keV in Si) and contains a 15-bit counter. The detector sensitive area is about 1 cm/sup 2/, but several detectors could be assembled in arrays. The measured background counts were about 3.5/spl middot/10/sup -2/ cps/cm/sup 2/, which implies a very high sensitivity of the device. The detection threshold used in this experiment was 15 keV. In this paper we show the results obtained in the real time monitoring of two biological dynamic processes: an amino acid uptake and the thermal denaturation process of oligonucleotides. Specifically, we have followed over time the accumulation of a marked amino acid ([/sup 14/C]L-Leucine) into Octopus vulgaris eggs cells. After about 20 min from the beginning of the uptake process, the radioactively marked eggs become clearly visible over the background culture radioactive medium. We also describe the successful performance of the /spl beta/-imaging system in genetic studies involving the real time reconstruction of denaturation and kinetics curves for two different /sup 32/P-radiolabeled nucleotides.
A Mixed-Mode Pixel Array Detector (MMPAD) has been conceived for protein crystallography applications. The most notable feature of the detector is the combination of analog and digital approaches used in the pixel to ...
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A Mixed-Mode Pixel Array Detector (MMPAD) has been conceived for protein crystallography applications. The most notable feature of the detector is the combination of analog and digital approaches used in the pixel to generate very large dynamic range, low dead time, and fast readout of the types of spot intensity measurements needed in X-ray images from large macromolecules. Prototype structures for the pixel have been fabricated and evaluated and indicate that an intensity range of 10/sup 7/ to 1 can be measured with a precision of 0.25%, while still maintaining a high DQE for X-rays in the 6-18 keV range. The mixed-mode structure is compatible with a fast I/O system and allows the possibility of full-frame readout in the ms range. We present details of pixel behavior, design of support electronics, hybridization results and plans for fabrication of large arrays.
The 5th International conference on Materials and applications for sensors and Transducers, Mykonos island, Greece, hosted about 110 oral and poster papers and more than 90 participants. IC-MAS, as an international an...
The 5th International conference on Materials and applications for sensors and Transducers, Mykonos island, Greece, hosted about 110 oral and poster papers and more than 90 participants. IC-MAS, as an international annual conference which tries to meet the needs for various types of sensors, particularly those which may be manufactured by low cost methods (i.e. hybrid sensors, smart specialization devices, particular applications not necessarily requiring integrated micro-nano technologies), covering all types of materials and physical effects, appears to be a necessity. IC-MAST has been established as a high quality international conference by: I. Gathering together multinational researchers from all over the world, working in different materials for sensors and transducers and technical applications of sensors, but also in some cases in the management of the data coming from sensors and transducers. The careful selection of the conference place (like Aegean Sea, Budapest, Prague, Bilbao, Mykonos etc) allows for enjoying the local hospitality and sightseeing. ii. Emphasizing in hybrid sensors and smart specialization devices produced by inexpensive methods, without excluding of course micro-nano technology, from all kinds of solidstate, liquid and gaseous materials, as well as in particular transducer applications (design and development, as well as use of sensing data) iiI. Innovatively implementing the Virtual Paper Concept, allowing for large impact of research works presented in the conference by authors who either have no time or no funding support for visiting a conference; this year more than 12 virtual papers are presented in the 5th IC MAST, following a standardized procedure via the our robust and reliable conference Site (***!) > IV. Allowing for lengthy technical and managerial discussions in terms of sensor, material and instrumentation development; furthermore, the different research groups gathered together are offered the particular adva
With the development of quantum computers in recent years, the security of traditional public-key encryption algorithms is facing serious threats, and post-quantum cryptography (PQC) algorithms that can resist quantum...
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In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is...
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In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of similar to 10 ps and similar to 10 mu m with a 50 mu m thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor similar to 10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 mu m thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.
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