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conference on solid state sensor arrays - development and applications

作者： Heyes, PS Pool, PJ Holtom, R EEV Ltd Solid State Imaging 106 Waterhouse Lane Chelmsford Essex CM1 2QU United Kingdom

ISBN: (纸本)0819424307

The design of scientific image sensors has not progressed as rapidly as developments in the technology could have permitted. This has been a consequence of an incorrect perception by manufacturers that the scientific market was insufficiently large to justify the required investment which, in turn, has lead to the use by many scientific customers of 'do-it-yourself design and foundry solutions to their imaging needs. This paper will introduce the basic features of the new generation image sensor and will describe the design of these devices.

关键词： CCD sensor array back-thinning anti-blooming inverted mode operation (IMO) quantum efficiency (QE) astronomy

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A memory read-out approach for a 0.5 μm CMOS image sensor

A memory read-out approach for a 0.5 μm CMOS image sensor

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conference on solid state sensor arrays - development and applications ii

作者： Hoekstra, W van der Avoird, A Kole, M Schrooten, GG Schaeffer, CJ Philips Imaging Technol Eindhoven Netherlands

ISBN: (纸本)0819427411

In image sensors with passive pixels the column capacitance is large compared to the capacitance of the pixel. The charge-to-voltage conversion occurs in the column amplifier relatively far from the pixel. This may result in a high sensitivity to interference, especially in case other electronic circuitry is located on the same chip. Two types of CIF CMOS imagers are presented that use different read-out options to counter this effect. Both designs use differential read-out as DRAM's do. This means that the pixel is compared to a reference cell. The first type uses a reference cell on the same row;the second type utilizes a fully symmetrical way of read-out, similar to digital memories by having its reference on the same column. Furthermore, two other means of image quality improvement are applied. A boost circuit is used to generate a negative voltage for driving the selecting transistor to insure that it is completely switched on during pixel reset. By this, threshold differences between pixels do not affect the reset voltage. The second is a well thought-out column amplifier that calibrates its offset before reading the pixel information.

关键词： Image sensors

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New piezoceramic PZT-PNN material for medical diagnostics applications

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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 2001年第10-11期21卷 1469-1472页

作者： Bove, T Wolny, W Ringgaard, E Pedersen, A Ferroperm Piezoceram AS DK-3490 Kvistgaard Denmark

The development of a new piezoceramic material, Ferroperm. Pz21, optimised for use in medical diagnostics applications is described. The requirements to such a material are very high permittivity, sensitivity and coupling factors, and at the same time a relatively high Curie temperature. The structure must furthermore be very dense and fine-grained, since dicing of small sub-elements for medical arrays must be performed without damaging the material. The developed material is a solid solution between a PZT phase and the relaxor phase Pb(Ni1/3Nb2/3)O-3. A comparison between different production processes is given, and a new solid state route for production of very dense and fine-grained materials is presented. Very positive characteristics are generally observed, and a stable behaviour even at elevated temperatures indicate that the material can find applications not only in the medical market, but also as a more general sensor/actuator. (C) 2001 Elsevier Science Ltd. All rights reserved.

关键词： functional applications perovskites piezoelectric properties powders : solid state reaction PZT

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Contact-type color image sensor using three LED switching method

Contact-type color image sensor using three LED switching me...

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conference on solid state sensor arrays - development and applications

作者： Hamaguchi, T Yamashita, H Ohta, A Matsumoto, T Saito, M Mitsubishi Electric Corp. (Japan)

ISBN: (纸本)0819424307

We have developed a new contact-type color image sensor for personal use. Three color light emitted diodes(LEDs) are used, for illuminating source of document. The photodiode MOS image sensor chips are used for the photodetector element which has superior linearity characteristic. It scans an A-size document in 25 seconds at 300 dots per inch. This color image sensor is compact and very low power, so it is most suitable to sheetfed color scanner.

关键词： image sensor light emitted diode photodiode LED switching method low power photodetector color scanner

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The color cross-talk simulation analysis for image sensor

The color cross-talk simulation analysis for image sensor

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conference on solid state sensor arrays - development and applications

作者： Yamaguchi, T Yamashita, H Ihara, H iida, Y Ioue, I Nozaki, H ULSI Research Center Toshiba Corporation 1 Komukai Toshiba-cho Saiwai-ku Kawasaki 210 Japan

The color cross-talk simulation analysis was carried out. The color cross-talk was depended on the p-well potential profile. The color cross-talk has a minimum value around 2.3 mu m junction depth of p-well. The color... 详细信息

ISBN: (纸本)0819424307

关键词： image sensor color cross-talk photosensitivity

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Design and characterization of CMOS APS imagers on two different technologies

Design and characterization of CMOS APS imagers on two diffe...

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conference on solid state sensor arrays - development and applications ii

作者： Cavadore, C Solhusvik, J Magnan, P Gautrand, A Degerli, Y Lavernhe, F Farre, J Saint-Pe, O Davancens, R Tulet, M SUPAERO Dept Elect F-31055 Toulouse 4 France

ISBN: (纸本)0819427411

In this paper, we present experimental results from measurements on CMOS APS imager designed by CIMI-SUPAERO on two different technologies. In both cases, pixels with photoMos and photodiode structures have been designed. The first circuit has been developed using a standard CMOS DLP/DLM 1.2 mu m process from Austria Micro Systems. The detector array consists of 32x32 square pixels with 50 mu m pixel pitch;fill factor is 75 % for photodiode (PD) and 50 % for photoMos (PM). The circuit is also including row and column address decoders and the readout circuitry so as to perform on-chip correlated double-delta sampling to reduce column to column fixed pattern noise. Two other chips have been developed with a standard CMOS SLP/DLM process from MIETEC with 0.7 mu m design rules, which includes a 128x128 pixels array, with 21 mu m pixel pitch and analogue readout circuitry. Among 10 different arrays, no faulty one was observed for both circuits. In this paper, we compare both performances of 32x32 pixels and 128x128 pixels in terms of dark current, quantum efficiency, conversion gain, dynamic range, linearity and spatial uniformity.

关键词： Active Pixel sensor APS CMOS image sensors characterisation

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MOS AREA sensor .2. LOW-NOISE MOS AREA sensor WITH ANTIBLOOMING PHOTO-DIODES

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IEEE JOURNAL OF solid-state CIRCUITS 1980年第4期15卷 747-752页

作者： OHBA, S NAKAI, M ANDO, H HANAMURA, S SHIMADA, S SATOH, K TAKAHASHI, K KUBO, M FUJITA, T HITACHI LTD MUSASHI WORKSKOKUBUNJITOKYO 185JAPAN HITACHI LTD MOBARA WORKSCHIBAJAPAN

The development of a high-sensitivity 320 X 244 element MOS area sensor and a novel fixed pattern noise (FPN) suppressing circuit are reported in this paper. The new device incorporates p/sup +/-n/sup +/ high-C photodiodes and double-diffused sense lines. The p/sup +/-n/sup +/ high-C photodiodes provide a large dynamic range and a large saturation signat of 1.4 /spl mu/A with 6-1x W-lamp illumination. The double-diffused sense lines are introduced to vastly improve blooming characteristics, making use of a built-in potential barrier. FPN is proved to stem mainly from inversion charge variations through horizontal switching MOS gate capacitances. A simple high-performance FPN suppressing circuit is proposed which realizes high signal-to-noise (S/N) ratios of more than 68 dB at saturation. The new sensor is tested in a high-sensitivity black-and-white VTR hand-held camera and will find broad applications.

关键词： Photodiodes sensor phenomena and characterization Video recording Cameras sensor arrays Dynamic range Capacitance Circuit testing Image sensors MOSFETs

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Charge-transfer-efficiency (CTE) measurement techniques applied to proton-irradiated, linear charge-coupled devices

Charge-transfer-efficiency (CTE) measurement techniques appl...

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conference on solid state sensor arrays - development and applications ii

作者： Dutton, TE Woodward, WF Lomheim, TS Aerospace Corp Sensor Syst Subdiv Los Angeles CA 90009 USA

ISBN: (纸本)0819427411

Charge-Transfer-Efficiency (CTE) is a parameter that is associated with the optical performance and radiometric accuracy of a Charge-Coupled Device (CCD). While modern CCD's are typically quoted as having CTE>0.99999, we show that a) this efficiency can be degraded by exposure to energetic protons and b) the measured efficiency, at least in the case of irradiated devices, is dependent on the size of the signal being transferred. A comparison of two techniques of CTE measurement is presented, with emphasis on an Fe-55 X-ray charge-generation and collection technique tailored especially for use with linear CCD's. While our technique follows the same general X-ray method widely used to characterize area CCD's, its implementation, including the processing of the resulting experimental data, is somewhat novel. The X-ray technique requires no special device circuitry or equipment and, in our configuration, may be used on virtually any linear or bilinear CCD;the same general technique is used on area arrays. It is shown that the technique is appropriate for characterizing small-signal CTE with or without a high background. It is also shown that the electrical injection CTE, while requiring the injection circuitry to be designed and built-in to the CCD structure, is more appropriate for large-signal CTE measurement. Data are presented showing experimental pre-and post-irradiation CTE measured as a function of signal level and background level for a two-phase linear CCD. Additionally, it is shown that in our tests, the CTE degraded even at very small accelerated doses (<10 kRad(Si) of ionizing proton dose), but further degradation was at least partly compensated by an enhanced background due to increasing dark currents.

关键词： charge transfer efficiency CTE X-ray charge coupled device CCD electrical injection proton irradiation

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Large format CID x-ray image sensor

Large format CID x-ray image sensor

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conference on solid state sensor arrays - development and applications ii

作者： Carbone, J Alam, Z Borman, C Czebiniak, S Ziegler, H CIDTEC Liverpool NY 13088 USA

ISBN: (纸本)0819427411

A large format (31 x 23 mm(2) display) CID imager module capitalizes on CID large well capacity and radiation resistance to image dental x-rays. The module, which consists of the imager, conversion phosphor and ancillary electronics, is encapsulated in a 40 x 28 x 5 mm(3) robust package that is lightproof, moisture-proof and meets FDA and RFL/EMI standards. Data exposure and readout is simple. The imager normally exists in an active reset mode until X-ray application automatically places the imager into a charge integration mode. Readout begins immediately upon completion of the x-ray exposure or manual application of an external trigger source. The imager returns to the reset mode once the data read out is complete. Pixels are arranged in an SVGA compatible 800(H) x 600(V) format. Each pixel is square and 38.5 microns/side. The imager is coated using a proprietary phosphor deposition process that results in a limiting resolution of 9 LP/mm from an X-ray illumination source. Better than 2,000:1 dynamic range and shot-noise limited operation is achieved. Direct X-ray detection and attendant noise is minimized via the phosphor and epitaxial layer that lies beneath the pixel array. The imager/module architecture and electro-optical performance are described in detail here in.

关键词： CIDs dental X-ray electronic imaging radiation-hardened charge transfer device

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Study of pixel structure and layout for CMOS Active Pixel Image sensor

Study of pixel structure and layout for CMOS Active Pixel Im...

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conference on solid state sensor arrays - development and applications ii

作者： iida, Y Oba, E Mabuchi, K Nakamura, N Yamaguchi, T Ihara, H Nozaki, H Toshiba Ctr Res & Dev Adv Semicond Devices Res Labs Kawasaki Kanagawa Japan

ISBN: (纸本)0819427411

Shrinkage of pixel structures and layouts for CMOS Active Pixel Image sensors (APS's) are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using minimum design rule, quarter micron rule or sub quarter micron rule, costs expensive. Therefore, pixel size shrinkage using relatively rough design rule have been studied for reduction of the chip cost. We have already reported about small pixel structure by replacement of row-select transistor by row-select capacitor, by omission of reset transistor with forward bias reset operation, and by omission of reset transistor with pinned-buried reset channel. We have also reported about small pixel by high packing density layout named "I-shaped cell" and its zigzag layout. However, these pixel shrinkage have some disadvantages. In this paper, we propose a novel pixel structure driven by pulse operation of drain line for row select and reset. Conventional row select structure, row select transistor or row select capacitor, is omitted by the row-select channel that contains low impurity concentration and has no gate structure. Moreover, conventional reset transistor is also replaced by reset channel structure in like manner. These structures and triple level pulse operation of drain realize quite simple pixel structure in which amplification transistor is the only gate structure. A large fill factor of 37% is obtained by this structure, in 5.6 mu m x 5.6 mu m pixel designed by 0.7 mu m rule.

关键词： CMOS Active Pixel Image sensor (APS) pixel layout photodiode fill factor simulation

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