检索结果-内蒙古大学图书馆

42 conference on Infrared Technology and applications XLii

作者： Rehm, Robert Daumer, Volker Hugger, Tsvetelina Kohn, Norbert Luppold, Wolfgang Mueller, Raphael Niemasz, Jasmin Schmidt, Johannes Rutz, Frank Stadelmann, Tim Wauro, Matthias Woerl, Andreas Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510600607

For more than two decades, Antimony-based type-ii superlattice photodetectors for the infrared spectral range between 3-15 mu m are under development at the Fraunhofer Institute for Applied solid state Physics (IAF). Today, Fraunhofer IAF is Germany's only national foundry for InAs/GaSb type-ii superlattice detectors and we cover a wide range of aspects from basic materials research to small series production in this field. We develop single-element photodetectors for sensing systems as well as two-dimensional detector arrays for high-performance imaging and threat warning systems in the mid-wavelength and long-wavelength region of the thermal infrared. We continuously enhance our production capabilities by extending our in-line process control facilities. As a recent example, we present a semiautomatic wafer probe station that has developed into an important tool for electrooptical characterization. A large amount of the basic materials research focuses on the reduction of the dark current by the development of bandgap engineered device designs on the basis of heterojunction concepts. Recently, we have successfully demonstrated Europe's first LWIR InAs/GaSb type-ii superlattice imager with 640x512 pixels with 15 mu m pitch. The demonstrator camera already delivers a good image quality and achieves a thermal resolution better than 30 mK.

关键词： InAs/GaSb type-ii superlattice photodetector T2SL MWIR LWIR

来源：评论

学校读者我要写书评

暂无评论

development of Ultra-Fast Silicon Detectors for 4D tracking

引用

JOURNAL OF INSTRUMENTATION 2017年第12期12卷 C12012-C12012页

作者： Staiano, A. Arcidiacono, R. Boscardin, M. Betta, G. F. Dalla Cartiglia, N. Cenna, F. Ferrero, M. Ficorella, F. Mandurrino, M. Obertino, M. Pancheri, L. Paternoster, G. Sola, V. Ist Nazl Fis Nucl Sez Torino Via P Giuria 1 Turin Italy Univ Trento Dipartimento Fis Via Sommarive 14 Povo Trent Italy Fdn Bruno Kessler Ctr Mat & Microsyst Via Sommarive 18 Povo Trent Italy Univ Turin Dipartimento Fis Via P Giuria 1 Turin Italy Univ Piemonte Orientale Dipartimento Sci Farmaceut Largo Donegani 2-3 Novara Italy

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of similar to 10 ps and similar to 10 mu m with a 50 mu m thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor similar to 10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 mu m thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

关键词： Charge transport and multiplication in solid media Detector modelling and simulations ii (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) Particle tracking detectors (solid-state detectors) Radiation-hard detectors

来源：评论

学校读者我要写书评

暂无评论

5th International conference on Materials and applications for sensors and Transducers (IC-MAST2015)

引用

IOP conference Series: Materials Science and Engineering 2016年第1期108卷

作者： Vlachos, D.S. Hristoforou, E. Vlachos, D. Giouroudi, I. Kar-Narayan, S. Potirakis, S. National Technical University of Athens Greece University of Peloponnese Greece Vienna University of Technology Austria University of Cambridge United Kingdom Greece

The 5th International conference on Materials and applications for sensors and Transducers, Mykonos island, Greece, hosted about 110 oral and poster papers and more than 90 participants. IC-MAS, as an international annual conference which tries to meet the needs for various types of sensors, particularly those which may be manufactured by low cost methods (i.e. hybrid sensors, smart specialization devices, particular applications not necessarily requiring integrated micro-nano technologies), covering all types of materials and physical effects, appears to be a necessity. IC-MAST has been established as a high quality international conference by: I. Gathering together multinational researchers from all over the world, working in different materials for sensors and transducers and technical applications of sensors, but also in some cases in the management of the data coming from sensors and transducers. The careful selection of the conference place (like Aegean Sea, Budapest, Prague, Bilbao, Mykonos etc) allows for enjoying the local hospitality and sightseeing. ii. Emphasizing in hybrid sensors and smart specialization devices produced by inexpensive methods, without excluding of course micro-nano technology, from all kinds of solid state, liquid and gaseous materials, as well as in particular transducer applications (design and development, as well as use of sensing data) iiI. Innovatively implementing the Virtual Paper Concept, allowing for large impact of research works presented in the conference by authors who either have no time or no funding support for visiting a conference; this year more than 12 virtual papers are presented in the 5th IC MAST, following a standardized procedure via the our robust and reliable conference Site (***!) > IV. Allowing for lengthy technical and managerial discussions in terms of sensor, material and instrumentation development; furthermore, the different research groups gathered together are offered the particular adva

关键词：

来源：评论

学校读者我要写书评

暂无评论

A Scalable and Adaptable Probabilistic Model Embedded in an Electronic Nose for Intelligent sensor Fusion 11

A Scalable and Adaptable Probabilistic Model Embedded in an ...

引用

11th IEEE Annual Biomedical Circuits and Systems conference (BioCAS)

作者： Tang, Chen-Ting Huang, Cheng-Ming Tang, Kea-Tiong Chen, Hsin Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan

ISBN: (纸本)9781479972340

The electronic nose (eNose) mimicking the mammalian olfactory system has each sensor respond to different odours to different extents. However, the real environment contains multiple odours interacting with each other, such that the sensory signals of an eNose exhibit high variability and the responses to different odours usually overlap with each other. This paper presents the development of a scalable and adaptable probabilistic model for recognising eNose signals and realising the model as customer- designed integrated circuits. The scalability refers to interconnecting multiple chips to form a large network of probabilistic model for processing high-dimensional sensory signals, or to form a multi-expert system that is able to estimate the likelihood of belonging to different types of odours. The latter case could provide extra information for clinical diagnosis. Furthermore, on-chip adaptability is incorporated to learn new data distribution or variability in real time. By integrating the adaptable probabilistic model with eNose sensor arrays, analog-to-digital converters, and a digital processor on a single chip, an intelligent eNose microsystem will be formed for a variety of biomedical applications.

关键词： probabilistic models recognising eNose signals scalable architecture on-chip learning ability

来源：评论

学校读者我要写书评

暂无评论

Quantum efficiency and dark current evaluation of a backside illuminated CMOS image sensor

引用

JAPANESE JOURNAL OF APPLIED PHYSICS 2015年第4期54卷 4DE09.1-4DE09.6页

作者： Vereecke, Bart Cavaco, Celso De Munck, Koen Haspeslagh, Luc Minoglou, Kyriaki Moore, George Sabuncuoglu, Deniz Tack, Klaas Wu, Bob Osman, Haris IMEC B-3001 Leuven Belgium Poongsan Corp CA Branch Sunnyvale CA 94085 USA

We report on the development and characterization of monolithic backside illuminated (BSI) imagers at imec. Different surface passivation, anti-reflective coatings (ARCs), and anneal conditions were implemented and their effect on dark current (DC) and quantum efficiency (QE) are analyzed. Two different single layer ARC materials were developed for visible light and near UV applications, respectively. QE above 75% over the entire visible spectrum range from 400 to 700nm is measured. In the spectral range from 260 to 400nm wavelength, QE values above 50% over the entire range are achieved. A new technique, high pressure hydrogen anneal at 20 atm, was applied on photodiodes and improvement in DC of 30% for the BSI imager with HfO2 as ARC as well as for the front side imager was observed. The entire BSI process was developed 200mm wafers and evaluated on test diode structures. The knowhow is then transferred to real imager sensors arrays. (C) 2015 The Japan Society of Applied Physics

关键词： imaging instrument COPPER ALLOY NO 260 annealed condition Visible Light CMOS image sensors spectral range direct current Surface passivation Photodiodes Quantum efficiency Dark current

来源：评论

学校读者我要写书评

暂无评论

Quantum efficiency and dark current evaluation of a backside illuminated CMOS image sensor

Quantum efficiency and dark current evaluation of a backside...

引用

International conference on solid state Devices and Materials (SSDM 2014)

关键词： Quantum efficiency

来源：评论

学校读者我要写书评

暂无评论

Plant Growth Optimization Using Variable Intensity and Far Red LED Treatment in Indoor Farming 1

Plant Growth Optimization Using Variable Intensity and Far R...

引用

International conference on Smart Smart sensors and applications

作者： Harun, Ahmad Nizar Ahmad, Robiah Mohamed, Norliza UTM Razak Sch Engn Kuala Lumpur Malaysia UTM Adv Technol Sch Kuala Lumpur Malaysia MIMOS Berhad Minist Sci Technol & Innovat Kuala Lumpur Malaysia

ISBN: (纸本)9781479973644

Plant growth optimization using LED light has been conducted to study the best method to reduce power consumption and obtain the optimum growth. In this study a system that able to produce variable intensity using microcontroller, solid state and dimmable LED light has been proposed. Two experiments were conducted with i) combined Red / Blue/White (RBW) LEDs of ratio 16: 4: 2 as light source for 12 hours photoperiod treatment ii) Red/Blue/Far Red (RBFR) LEDs of ratio 16: 4: 16 as light source for 12 hours photoperiod treatment. The finding from the experiment has shown that variable intensity method has proven to reduce overall power consumption, increase mortality of the plant by introducing hardening process and significantly RF treatment has shown to delay the flowering process. Our analysis shows that the system allowed the finding of a new method on optimization of plant growth using LED light with variable intensity and shows significant difference on flowering respond using FR treatment. Prototype of the proposed system has been developed in small scale hydroponic plant growth chamber. Data acquisition and remote management of the system is used to maintain humidity, temperature, CO2 concentration and light intensity and development of automated system for plant manipulation.

关键词： Indoor Farming Far Red Treatment for Flowering Control Wireless sensor Network Indoor Farming Plant Factory LED Light Spectrum sensor Variable Intensity Treatment and Intelligent Control Farming

来源：评论

学校读者我要写书评

暂无评论

Infrared photodetector development at Fraunhofer IAF

Infrared photodetector development at Fraunhofer IAF

引用

conference on Quantum Sensing and Nanophotonic Devices XI

作者： Rutz, F. Kleinow, P. Walther, M. Aidam, R. Bronner, W. Kirste, L. Niemasz, J. Rehm, R. Schmitz, J. Stadelmann, T. Wauro, M. Woerl, A. Sieck, A. Ziegler, J. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany AIM Infrarot Module GmbH D-74072 Heilbronn Germany

ISBN: (纸本)9780819499066

Fraunhofer IAF can look back on many years of expertise in developing high-performance infrared photodetectors. Since pioneering the InAs/GaSb type-ii superlattice detector development, extensive capabilities of epitaxy, process technology, and device characterization of single element detectors and camera arrays for the mid-and longwave infrared (MWIR and LWIR) have been established up to the level of small-scale production. Bispectral MWIR/MWIR and MWIR/LWIR cameras based on type-ii superlattices or HgCdTe are key topics at Fraunhofer IAF. Recently, we started the development of InGaAs-based short-wave infrared (SWIR) photodetectors for low-light-level applications. In this contribution, we report on materials and technology development for SWIR p-i-n and avalanche photodiodes (APDs), covering detector design, epitaxial growth, process technology, and most recent electro-optical characterization results of focal plane arrays as well as single element detectors.

关键词： SWIR InGaAs photodiode APD InAs/GaSb superlattice dual-color MWIR LWIR

来源：评论

学校读者我要写书评

暂无评论

development of Bi-Spectral InAs/GaSb Type ii Super lattice Image Detectors

Development of Bi-Spectral InAs/GaSb Type II Super lattice I...

引用

40th conference on Infrared Technology and applications

作者： Stadelmann, T. Woerl, A. Wauro, M. Daumer, V. Niemasz, J. Luppold, W. Simon, T. Riedel, M. Rehm, R. Walther, M. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany AIM Infrarot Module GmbII D-74072 IIeilbronn Germany

ISBN: (纸本)9781628410075

InAs/GaSb superlattices are characterized by a broken-gap type ii band alignment. Their effective band gap can be engineered to match mid to long wavelength infrared (IR) photon energies. Fraunhofer IAF has developed image detectors for threat warning systems based on this material system that are capable of spatially and temporally coincident detection in two mid-IR wavelength ranges. We review the present status of the processing technology, report continuous improvements achieved in key areas of detector performance, including defect density and noise behavior, and present initial results for statistical characterization of ensembles of detector elements with respect to diode characteristics and noise.

关键词： InAs/GaSb type ii superlattice infrared image sensor

来源：评论

学校读者我要写书评

暂无评论

Copper(ii) oxide nanowire array hydrogen sensor via facile large area contact integration

Copper(II) oxide nanowire array hydrogen sensor via facile l...

引用

2013 17th International conference on solid-state sensors, Actuators and Microsystems, TRANSDUCERS and EUROsensorS 2013

作者： Limkrailassiri, K. Kozinda, A. Lin, L. Berkeley Sensor and Actuator Center University of California Berkeley United States

ISBN: (纸本)9781467359818

This paper presents a novel method to achieve large area contact integration for copper(ii) oxide (CuO) nanowire array-based hydrogen gas sensors, which provides a simple solution to the ongoing challenge of harvesting nanostructured materials for gas sensing applications. The method presented herein offers six distinct advantages over previous nanostructured gas sensing technologies: (1) convenient electrical access to as-grown, freestanding nanowire arrays, thereby obviating postgrowth thin-film metallization, (2) lithography-free fabrication, (3) usage of large area nanowire arrays to circumvent low yield of single nanowire sensors, (4) reusability of contacts for batch characterization, (5) compatibility with all free-standing arrays grown on electrically conductive substrates, and (6) rapid response and recovery times. The CuO nanowire array-based gas sensors exhibited 5× to 25× increased resistance during operation, and a 20× improvement in recovery time compared to prior works. © 2013 IEEE.

关键词： Copper oxides

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：