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TRANSDUCERS 2009 - 15th International conference on solid-state sensors, Actuators and Microsystems

作者： Chang, W.C. Sretavan, D.W. Departments of Ophthalmology and Physiology Neuroscience and Bioengineering Programs University of California San Francisco CA United States

ISBN: (纸本)9781424441938

We show several applications for a unique method for creating user-friendly, micropatterned substrates for neuron and cell culture. With neurons, we demonstrated that our micropatterns can separate cell bodies and axons while organizing them in orderly arrays for easy experimentation. These micropatterned neuron cultures also persisted for weeks, enabling maturation and development of presynaptic structures and potentially allowing the explicit design of neuronal circuits. Beyond neurons, we also demonstrated the culture of fibroblasts on the patterned substrates and showed that these cell types likewise remained viable and highly compliant to a variety micropatterns. ©2009 IEEE.

关键词： Cell culture

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Type-ii Superlattices - The Fraunhofer Perspective

Type-II Superlattices - The Fraunhofer Perspective

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conference on Infrared Technology and applications XXXVI

作者： Rehm, Robert Walther, Martin Schmitz, Johannes Rutz, Frank Woerl, Andreas Scheibner, Ralf Ziegler, Johann Fraunhofer Inst Angew Festkorperphys IAF Tullastr 72 D-79108 Freiburg Germany AIM Infrarot Module GmbH D-74072 Heilbronn Germany

ISBN: (纸本)9780819481245

In the past years, the development of the type-ii InAs/GaSb superlattice technology at the Fraunhofer-Institute for Applied solid state Physics (IAF) has been focused on achieving series-production readiness for third generation dual-color superlattice detector arrays for the mid-wavelength infrared spectral range. The technology is ideally suited for airborne missile threat warning systems, due to its ability of low false alarm remote imaging of hot carbon dioxide signatures on a millisecond time scale. In a multi-wafer molecular beam epitaxy based process eleven 288x384 dual-color detector arrays are fabricated on 3 '' GaSb substrates. Very homogeneous detector arrays with an excellent noise equivalent temperature difference have been realized. The current article presents the type-ii superlattice dual-color technology developed at IAF and delivers insights into a range of test methodologies employed at various stages during the fabrication process, which ensure that the basic requirements for achieving high detector performance are met.

关键词： InAs/GaSb type-ii superlattice photodiode missile threat warning carbon dioxide third generation infrared imager dual-color infrared camera dual-band IR camera GaSb substrate carrier background

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Quasianalog accelerometer using microswitch array

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sensorS AND ACTUATORS A-PHYSICAL 1996年第1-3期54卷 574-578页

作者： Noetzel, J Tonnesen, T Benecke, W Binder, J Mader, G SIEMENS AG AUTOMOT SYST GRP D-93049 REGENSBURG GERMANY

This paper describe the development of a quasianalog accelerometer which uses an array of acceleration switches. The investigations are based on results or fabricated and evaluated single-microswitch sensors. The new acceleration sensor concept combines the advantage of high EMI immunity and simple signal pre-conditioning circuitry. Important characteristics of the laterally moving cantilevers, such as resonance frequency and switching time, can he determined by a single mask. First test devices have been fabricated by the use of a special sacrificial-layer additive technology. This Microform technology combines UV patterning of very thick photoresist layers and moulding of the resulting patterns by electroplated metals. This technology is used for the fabrication of laterally driven microswitches, each having a different acceleration threshold. tinder an applied acceleration, the cantilever beam deflects laterally and closes a contact with an electrode. With an electrode on each side of the cantilever, two directions of acceleration can be measured. A simulation model has been developed which enables the design of quasianalog sensors for different applications. Different layouts are created to investigate the basic characteristics. The simulation results are verified on a shaker using the fabricated lest structures of a single-microswitch sensor.

关键词： accelerometers arrays microswitches

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A dynamic range expansion method for a CMD imager

A dynamic range expansion method for a CMD imager

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conference on solid state sensor arrays - development and applications

作者： Shimamoto, H Mitani, K Fujita, Y NHK Science and Technical Research Laboratories Tokyo Japan

ISBN: (纸本)0819424307

A dynamic range expansion method for Charge Modulation Device (CMD) imagers has been proposed and an experimental circuit was evaluated. As active pixel sensors, CMD imagers offer significant advantages in terms of non-destructive readout and high-speed operation. Furthermore, the CMD imager used in this study has built-in dual vertical shift registers which can start their scanning independently. We applied our newly developed source reset method to the imager, which enables each pixel charge to be reset by external circuits. By using these functions, we have obtained our dynamic range expansion method. The source reset method enables each pixel of a CMD imager to be reset selectively. We use it for a regional electrical shutter. For instance, if there is an overexposed pixel, its accumulated charge is reset from outside the imager, so that the pixel charge is prevented from becoming saturated. The non-destructive readout and high-speed operation enable the CMD imager to be read multiple times without destruction of accumulated charges. For instance, if the imager is driven twice in one field period, each pixel's accumulations can be checked and reset selectively from external of the device at the first scanning, then, all the signals are obtained at the second scanning and output through a small process circuit. This dynamic range expansion method for CMD imagers needs only a simple feedback Circuit but does not need complex equipment externally nor adding reset circuits on a chip. An experimental circuit with this method was successfully evaluated here.

关键词： Charge Modulation Device source reset method dynamic range expansion active pixel sensor non-destructive readout feedback circuit

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Light emitting diode arrays for consumer and medical applications

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MATERIALS SCIENCE AND ENGINEERING B-solid state MATERIALS FOR ADVANCED TECHNOLOGY 1998年第1-3期51卷 90-93页

作者： Rys, A Piotrowski, T Sobczynski, R Kansas State Univ Dept Elect & Comp Engn Manhattan KS 66506 USA Inst Electron Technol PL-02668 Warsaw Poland Hadaspectrum PL-04831 Warsaw Poland

development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in the design and fabrication of surface emitting infrared LEDs in the spectral range from 1100 to 1650 nm. Custom made chips provide the surface-emitting LEDs with high radiance and superior far-field patterns. The hybrid 31-element array of LEDs was fabricated. A temperature sensor and a photodiode was incorporated on the hybrid circuit to control the temperature and light intensity of the diodes. The instrument prototype has been fabricated and preliminary experimental data have been collected. (C) 1998 Elsevier Science S.A. All rights reserved.

关键词： infrared light emitting diodes electrical contacts spectrometer hybrid circuits

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MiSPiA: Microelectronic Single-Photon 3D Imaging arrays for low-light high-speed Safety and Security applications

MiSPiA: Microelectronic Single-Photon 3D Imaging Arrays for ...

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conference on Emerging Technologies in Security and Defence;and Quantum Security ii;and Unmanned sensor Systems X

作者： Tosi, Alberto Zappa, Franco Politecn Milan Dip Elettron Informaz & Bioingn I-20133 Milan Italy

ISBN: (纸本)9780819497680

This paper reports the achievements so far attained in the development of high-performance CMOS SPADs for single-photon sensitive 2D imagers, based on photon-counting and 3D ranging cameras. The latters are based on both the direct in-pixel measurement of the Time-of-Flight of each photon bouncing bounce from the scene back to the camera and the "indirect" phase-resolved method to count reflected photons in well-defined time slots, synchronous to the active illumination of the scene. MiSPiA SPADs are the new state-of-the-art among SPADs in CMOS technologies.

关键词： Single Photon Avalanche Diode (SPAD) 3D ranging photon counting Time-of-Flight (TOF)

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Quasianalog accelerometer using microswitch array

Quasianalog accelerometer using microswitch array

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8th International conference on solid-state sensors and Actuators (Eurosensors IX)

作者： Noetzel, J Tonnesen, T Benecke, W Binder, J Mader, G SIEMENS AG AUTOMOT SYST GRP D-93049 REGENSBURG GERMANY

关键词： accelerometers arrays microswitches

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Type-ii Superlattice Infrared Detector Technology at Fraunhofer IAF 42

Type-II Superlattice Infrared Detector Technology at Fraunho...

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42 conference on Infrared Technology and applications XLii

作者： Rehm, Robert Daumer, Volker Hugger, Tsvetelina Kohn, Norbert Luppold, Wolfgang Mueller, Raphael Niemasz, Jasmin Schmidt, Johannes Rutz, Frank Stadelmann, Tim Wauro, Matthias Woerl, Andreas Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510600607

For more than two decades, Antimony-based type-ii superlattice photodetectors for the infrared spectral range between 3-15 mu m are under development at the Fraunhofer Institute for Applied solid state Physics (IAF). Today, Fraunhofer IAF is Germany's only national foundry for InAs/GaSb type-ii superlattice detectors and we cover a wide range of aspects from basic materials research to small series production in this field. We develop single-element photodetectors for sensing systems as well as two-dimensional detector arrays for high-performance imaging and threat warning systems in the mid-wavelength and long-wavelength region of the thermal infrared. We continuously enhance our production capabilities by extending our in-line process control facilities. As a recent example, we present a semiautomatic wafer probe station that has developed into an important tool for electrooptical characterization. A large amount of the basic materials research focuses on the reduction of the dark current by the development of bandgap engineered device designs on the basis of heterojunction concepts. Recently, we have successfully demonstrated Europe's first LWIR InAs/GaSb type-ii superlattice imager with 640x512 pixels with 15 mu m pitch. The demonstrator camera already delivers a good image quality and achieves a thermal resolution better than 30 mK.

关键词： InAs/GaSb type-ii superlattice photodetector T2SL MWIR LWIR

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Utilizing a chronopotentiometric sensor technique for metallothionein determination in fish tissues and their host parasites

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sensorS AND ACTUATORS B-CHEMICAL 2007年第1期127卷 112-119页

作者： Petrlova, Jitka Krizkova, Sona Zitka, Ondrej Hubalek, Jaromir Prusa, Richard Adam, Vojtech Wang, Joseph Beklova, Miroslava Sures, Bernd Kizek, Rene Mendel Univ Brno Dept Chem & Biochem CZ-61300 Brno Czech Republic Mendel Univ Brno Dept Anim Nutr & Forage Prod CZ-61300 Brno Czech Republic Brno Univ Technol Dept Microelect CZ-60200 Brno Czech Republic Charles Univ Prague Fac Med 2 Dept Clin Biochem & Pathobiochem CZ-15006 Prague 5 Czech Republic Arizona State Univ Dept Chem & Mat Engn Tempe AZ 85287 USA Arizona State Univ Dept Chem Tempe AZ 85287 USA Univ Vet & Pharmaceut Sci Dept Vet Ecol & Environm Protect CZ-61242 Brno Czech Republic Univ Duisburg Essen D-45117 Essen Germany

Metallothionein (MT) are a class of intracellular proteins possessing cysteme-rich and heavy metal-binding properties. They can be utilized as biomarkers for the detection and assessment of heavy metals in environmental pollution. This paper addresses the development of a sensor technique suitable for the determination of MT in the tissue samples of perches and their parasites. The work suggest a heavy metal biosensor based on interaction of heavy metals (lead(H), cadmium(H), copper(ii) and silver(l)) with MT using adsorptive transfer stripping (AdTS) technique in combination with chronopotentiometric stripping analysis. The samples were investigated with various heavy metals (lead(H), cadmium(H), copper(H) and silver(l)), prior to sensor applications to understand the interaction between MT and the metals. The results obtained from this experiment clearly show that cadmium(ii) had the highest affinity for MT followed by silver(l), copper(H) and lead(H). Based on these results, we attempted to quantify MT content with respect to content of a heavy metal in the samples of interest. The highest re-evaluated concentration of MT (495 ng/g of fresh weight) was determined in samples of Acanthocephalus anguillae. (c) 2007 Elsevier B.V. All rights reserved.

关键词： metallothionem sensor electrochemical detection peak H perch (Perca fluviatilis) parasites Acanthocephalus lucii and Acanthocephalus anguillae heavy metals

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development and Prototyping of the DEPFET Active Pixel Detector (June 2013)

Development and Prototyping of the DEPFET Active Pixel Detec...

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3rd International conference on Advancements in Nuclear Instrumentation, Measurement Methods and their applications (ANIMMA)

作者： Scheirich, J. Charles Univ Prague Fac Math & Phys Inst Particle & Nucl Phys Prague 18000 Czech Republic

ISBN: (纸本)9781479910465;9781479910472

Active pixel sensor composed of DEPFETs (DEPleted Field Effect Transistors) array has been developed by DEPFET collaboration. The concept of DEPFET was proposed by Kemmer and Lutz in 1987 and today, it was developed into state-of-the-art highly granular, ultra-transparent monolithic pixel detectors for vertex reconstruction at future collider experiments. Excellent signal over noise performance is provided by integration of a MOSFET (Metal Oxide Semiconductor Transistor) in each pixel, which works as the first amplification stage of readout electronics. Thinning technologies make it possible to manufacture DEPFET sensors with thickness of active sensor area 50-75 micrometers. Steering ASICs (Application-Specific Integrated Circuits) as well as test systems were developed to characterize and optimize the DEPFET sensors. The DEPFET detector is being developed as a vertex detector at Belle ii experiment at the electron-positron SuperKEKB collider in Japan and the future International Linear Collider, but the concept of the DEPFET sensor offers also other fields of applications. In this paper the key parameters of the sensor design are presented, together with the individual ASICs. Furthermore, results of the prototypes tested using radioactive source, and laser are shown.

关键词： Front-end electronics for detector readout Detector alignment and calibration methods (lasers, sources, particle-beams) solid state detectors

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