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conference on Emerging Technologies in Security and Defence;and Quantum Security ii;and Unmanned sensor Systems X

作者： Tosi, Alberto Zappa, Franco Politecn Milan Dip Elettron Informaz & Bioingn I-20133 Milan Italy

ISBN: (纸本)9780819497680

This paper reports the achievements so far attained in the development of high-performance CMOS SPADs for single-photon sensitive 2D imagers, based on photon-counting and 3D ranging cameras. The latters are based on both the direct in-pixel measurement of the Time-of-Flight of each photon bouncing bounce from the scene back to the camera and the "indirect" phase-resolved method to count reflected photons in well-defined time slots, synchronous to the active illumination of the scene. MiSPiA SPADs are the new state-of-the-art among SPADs in CMOS technologies.

关键词： Single Photon Avalanche Diode (SPAD) 3D ranging photon counting Time-of-Flight (TOF)

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development and Prototyping of the DEPFET Active Pixel Detector (June 2013)

Development and Prototyping of the DEPFET Active Pixel Detec...

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3rd International conference on Advancements in Nuclear Instrumentation, Measurement Methods and their applications (ANIMMA)

作者： Scheirich, J. Charles Univ Prague Fac Math & Phys Inst Particle & Nucl Phys Prague 18000 Czech Republic

ISBN: (纸本)9781479910465;9781479910472

Active pixel sensor composed of DEPFETs (DEPleted Field Effect Transistors) array has been developed by DEPFET collaboration. The concept of DEPFET was proposed by Kemmer and Lutz in 1987 and today, it was developed into state-of-the-art highly granular, ultra-transparent monolithic pixel detectors for vertex reconstruction at future collider experiments. Excellent signal over noise performance is provided by integration of a MOSFET (Metal Oxide Semiconductor Transistor) in each pixel, which works as the first amplification stage of readout electronics. Thinning technologies make it possible to manufacture DEPFET sensors with thickness of active sensor area 50-75 micrometers. Steering ASICs (Application-Specific Integrated Circuits) as well as test systems were developed to characterize and optimize the DEPFET sensors. The DEPFET detector is being developed as a vertex detector at Belle ii experiment at the electron-positron SuperKEKB collider in Japan and the future International Linear Collider, but the concept of the DEPFET sensor offers also other fields of applications. In this paper the key parameters of the sensor design are presented, together with the individual ASICs. Furthermore, results of the prototypes tested using radioactive source, and laser are shown.

关键词： Front-end electronics for detector readout Detector alignment and calibration methods (lasers, sources, particle-beams) solid state detectors

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COPPER(ii) OXIDE NANOWIRE ARRAY HYDROGEN sensor VIA FACILE LARGE AREA CONTACT INTEGRATION

COPPER(II) OXIDE NANOWIRE ARRAY HYDROGEN SENSOR VIA FACILE L...

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International conference on solid-state sensors, Actuators and Microsystems

作者： K. Limkrailassiri A. Kozinda L. Lin Berkeley Sensor and Actuator Center University of California

ISBN: (纸本)9781467359825

This paper presents a novel method to achieve large area contact integration for copper(ii) oxide (CuO) nanowire array-based hydrogen gas sensors, which provides a simple solution to the ongoing challenge of harvesting nanostructured materials for gas sensing applications. The method presented herein offers six distinct advantages over previous nanostructured gas sensing technologies: (1) convenient electrical access to as-grown, freestanding nanowire arrays, thereby obviating postgrowth thin-film metallization, (2) lithography-free fabrication, (3) usage of large area nanowire arrays to circumvent low yield of single nanowire sensors, (4) reusability of contacts for batch characterization, (5) compatibility with all free-standing arrays grown on electrically conductive substrates, and (6) rapid response and recovery times. The CuO nanowire array-based gas sensors exhibited 5× to 25× increased resistance during operation, and a 20× improvement in recovery time compared to prior works.

关键词： Hydrogen gas sensor contact integration copper oxide nanowires

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Nernst-Planck-Poisson Model for the Description of Behaviour of solid-Contact Ion-Selective Electrodes at Low Analyte Concentration

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ELECTROANALYSIS 2013年第1期25卷 133-140页

作者： Jasielec, Jerzy J. Lisak, Grzegorz Wagner, Michal Sokalski, Tomasz Lewenstam, Andrzej Abo Akad Univ Proc Chem Ctr Ctr Proc Analyt Chem & Sensor Technol ProSens Turku 20500 Finland AGH Univ Sci & Technol Fac Mat Sci & Ceram PL-30059 Krakow Poland

All-solid-state electrodes are increasingly being used in clinical, industrial and environmental analysis. This wide range of applications requires deep theoretical description of such electrodes. This work concentrates on the development of a numerical tool for the qualitative prediction of electrochemical behaviour for solid-contact ion-selective electrodes at low analyte concentrations. For this purpose, a general approach to the description of electro-diffusion processes, namely the Nernst-Planck-Poisson (NPP) model, was applied. The results obtained from this model are verified by experimental data of lead(ii)-selective electrodes based on a polymeric PVC membrane with polybenzopyrene doped with Eriochrome Black T used as the solid contact.

关键词： Potentiometry Ion-selective electrodes solid contact Response Nernst-Planck-Poisson model Electrodiffusion

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A 0.18µm CMOS SoC for a 100m-range 10fps 200×96-pixel time-of-flight depth sensor

A 0.18µm CMOS SoC for a 100m-range 10fps 200×96-pixel time...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： Cristiano Niclass Mineki Soga Hiroyuki Matsubara Masaru Ogawa Manabu Kagami Toyota Central Research and Development Laboratories Inc. Nagakute Japan

A number of potentially low-cost time-of-flight (ToF) 3D image sensors aiming at consumer electronics applications have recently appeared in CMOS. Diffused-light sensors taking advantage of SPAD pixels, conventional and pinned-photodiode lock-in pixels demonstrate centimeter-ranging performance in distances of typically up to 6m, and with the exception of, under low background light (BG) conditions. In those approaches, however, performance tends to rapidly deteriorate in severe BG conditions, such as outdoors, and long-distance ranges have yet to be reported. Another common limitation is their inability to cope with multi-echo target environments. Higher optical signal-to-background ratio (SBR), and hence better performance, is typically achieved by laser-scanning approaches, e.g. employing polygonal or MEMS mirrors. With the emerging need for high-resolution light detection and ranging (LIDAR) technologies in advanced driving-assistance systems (ADAS), we introduce an SoC that performs time-correlated single-photon counting (TCSPC) and complete DSP for a 100m-range ToF sensor. The chip provides the system-level electronics with a serial and low-bit-rate digital interface for: multi-echo distance, distance reliability, intensity, and BG-only intensity, thus mitigating system-level complexity and cost.

关键词： CMOS integrated circuits Photonics Histograms Digital signal processing Laser beams System-on-chip arrays

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The development of 3^rd Gen IR Detectors at AIM

The Development of 3<SUP>rd</SUP> Gen IR Detectors at AIM

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conference on Infrared Technology and applications XXXVii

作者： Ziegler, J. Eich, D. Mahlein, M. Schallenberg, T. Scheibner, R. Wendler, J. Wenisch, J. Wollrab, R. Daumer, V. Rehm, R. Rutz, F. Walther, M. AIM Infrarot Module GmbH Theresienstr 2 D-74072 Heilbronn Germany Fraunhofer Inst Appl Solid State Phys D-79108 Freiburg Germany

ISBN: (纸本)9780819485861

3rd generation IR modules - dual-color (DC), dual-band (DB), and large format two-dimensional arrays - require sophisticated production technologies such as molecular beam epitaxy (MBE) as well as new array processing techniques, which can satisfy the rising demand for increasingly complex device structures and low cost detectors. AIM will extend its future portfolio by high performance devices which make use of these techniques. The DC MW / MW detectors are based on antimonide type-ii superlattices (produced by MBE at Fraunhofer IAF, Freiburg) in the 384x288 format with a 40 mu m pitch. For AIM, the technology of choice for MW / LW DB FPAs is MCT MBE on CdZnTe substrates, which has been developed in cooperation with IAF, Freiburg. 640x512, 20 mu m pitch Focal Plane arrays (FPAs) have been processed at AIM. The growth of MW MCT MBE layers on alternate substrates is challenging, but essential for competitive fabrication of large two-dimensional arrays such as megapixel (MW 1280x1024, 15 mu m pitch) FPAs. This paper will present the development status and latest results of the above-mentioned 3rd Gen FPAs and Integrated Detector Cooler Assemblies (IDCAs).

关键词： Infrared detectors 3rd generation detectors HgCdTe MCT dual color dual band MW / LW megapixel MBE antimonide type-ii superlattices T2SL

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Type-ii Superlattices - The Fraunhofer Perspective

Type-II Superlattices - The Fraunhofer Perspective

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conference on Infrared Technology and applications XXXVI

作者： Rehm, Robert Walther, Martin Schmitz, Johannes Rutz, Frank Woerl, Andreas Scheibner, Ralf Ziegler, Johann Fraunhofer Inst Angew Festkorperphys IAF Tullastr 72 D-79108 Freiburg Germany AIM Infrarot Module GmbH D-74072 Heilbronn Germany

ISBN: (纸本)9780819481245

In the past years, the development of the type-ii InAs/GaSb superlattice technology at the Fraunhofer-Institute for Applied solid state Physics (IAF) has been focused on achieving series-production readiness for third generation dual-color superlattice detector arrays for the mid-wavelength infrared spectral range. The technology is ideally suited for airborne missile threat warning systems, due to its ability of low false alarm remote imaging of hot carbon dioxide signatures on a millisecond time scale. In a multi-wafer molecular beam epitaxy based process eleven 288x384 dual-color detector arrays are fabricated on 3 '' GaSb substrates. Very homogeneous detector arrays with an excellent noise equivalent temperature difference have been realized. The current article presents the type-ii superlattice dual-color technology developed at IAF and delivers insights into a range of test methodologies employed at various stages during the fabrication process, which ensure that the basic requirements for achieving high detector performance are met.

关键词： InAs/GaSb type-ii superlattice photodiode missile threat warning carbon dioxide third generation infrared imager dual-color infrared camera dual-band IR camera GaSb substrate carrier background

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2010 IEEE Asian solid-state Circuits conference, A-SSCC 2010

2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

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2010 6th IEEE Asian solid-state Circuits conference, A-SSCC 2010

ISBN: (纸本)9781424482979

The proceedings contain 97 papers. The topics discussed include: future television - super hi-vision and beyond;asymmetric cross-coupled sense amplifier for small-sized 0.5-V gigabit-DRAM arrays;a 28 nm dual-port SRAM macro with screening circuitry against write-read disturb failure;a multi-mode digital controller with windowed ADC and self-calibrated DPWM for slew-enhanced switching converter;a 1-V input, 0.2-V to 0.47-V output switched-capacitor DC-DC converter with pulse density and width modulation (PDWM) for 57% ripple reduction;an ultra-low-cost RFID tag with 1.67 Gbps data rate by ink-jet printing on paper substrate;low noise capacitive sensor for multi-touch mobile handset's applications;a 31mA CMOS wideband BD-ii B2&B3 mode receiver with 55dB gain dynamic range;a high-speed, on-chip implementation of Teager Kaiser operator for in-band interference rejection;a 40-GHz phase-locked loop for 60-GHz sliding-IF transceivers in 65nm CMOS;and a 0.45V-to-2.7V inductive-coupling level shifter.

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applications of a novel cell micropatterning process for long-term neuron and cell culture

Applications of a novel cell micropatterning process for lon...

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TRANSDUCERS 2009 - 15th International conference on solid-state sensors, Actuators and Microsystems

作者： Chang, W.C. Sretavan, D.W. Departments of Ophthalmology and Physiology Neuroscience and Bioengineering Programs University of California San Francisco CA United States

ISBN: (纸本)9781424441938

We show several applications for a unique method for creating user-friendly, micropatterned substrates for neuron and cell culture. With neurons, we demonstrated that our micropatterns can separate cell bodies and axons while organizing them in orderly arrays for easy experimentation. These micropatterned neuron cultures also persisted for weeks, enabling maturation and development of presynaptic structures and potentially allowing the explicit design of neuronal circuits. Beyond neurons, we also demonstrated the culture of fibroblasts on the patterned substrates and showed that these cell types likewise remained viable and highly compliant to a variety micropatterns. ©2009 IEEE.

关键词： Cell culture

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Array of X and gamma ray scintillator detector for space gamma ray telescope application

Array of X and gamma ray scintillator detector for space gam...

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IEEE Nuclear Science Symposium/Medical Imaging conference

作者： Labanti, Claudio Marisaldi, Martino Fuschino, Fabio Bastia, Paolo Negri, Barbara Perotti, Francesco Soltau, Heike INAF IASF Dept Bologna Italy Thales Alenia Space Milano Milan Italy Agenzia Spaziale Italiana Rome Italy INAF IASF Dept Milan Italy PN Sensor Munche Germany Germany

ISBN: (纸本)9781424427147

A The instruments on board the latest gamma observatories (INTEGRAL, AGILE, GLAST) combines technologies based either on solid state or on scintillator detector, the first one being favorite when a low energy threshold and a good energy resolution is required, the latter being more convenient for large volume when worse performance are still acceptable. With the development of new scintillator materials and even more with new low-noise ligth readout devices the differences between the two techniques are narrowing and for some application the cheaper scintillator detector can compete with solid state devices. Furthermore both these detector concepts can be combined in a single compact device by means of the Pulse Shape Discrimination (PSD) technique that allows to discriminate direct interactions in silicon from scintillation events. Combined in arrays they can be the base for position senstive planes to be combined with coded mask in imaging instruments or the component of new generation Compton based telescopes. For this purpose two prototype systems have been designed and realized, both based on a 20 channels Silicon Drift Detectors (SDD) monolithic array coupled to individual 1 cm thick CsI(TI) scintillator crystals. In the first system the detector readout is implemented with ASICs tailored specifically to the SDD readout, while in the second system the PSD readout of the array is implemented. The performance of these kind of detectors tested in the various prototypes as well as their applications in new generation space telescopes are discussed.

关键词： Cesium iodide

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