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conference on Microelectronics - Design, Technology and Packaging

作者： Kleinfelder, S Univ Calif Irvine Irvine CA 92697 USA

ISBN: (纸本)0819451673

Image sensors for scientific applications face unusually demanding performance requirements for speed, sensitivity, noise, dynamic range and data throughput. Dynamic proton radiography, for example, requires both extremely high frame rates (multi-MHz) and high dynamic range (similar to80 dB). Electron microscopy, particle physics, nuclear science and astrophysics applications requires high sensitivity and low noise for single-photon/single charged particle efficiency, often in extremely large (>100 M-pixel) arrays with tremendous sustained throughput (>50 G-pixels/s) and radiation-tolerance. This paper covers recent research results that extend standard CMOS image sensor performance in these areas. Signal to noise ratios as high as 90 dB have been achieved using a new, low-overhead, column-level active reset technique. This image sensor achieves output noise levels of similar to45 microvolts, rms, without the use of correlated double sampling. Enhanced sensitivity for single-photon detection has been obtained by using an epitaxial silicon region as a higher cross-section CMOS sensor, with low-capacitance diode or large-area pbotogate charge collection. This development has made possible the use of standard 0.25 micrometer digital CMOS sensor arrays in place of expensive hybrid high-resistivity silicon sensor focal plane arrays plus CMOS readout circuit combinations. High-speed transient image sensors with frame rates as high as 10 M-frames/s, combined with 13-bit resolution, has been achieved using on-focal-plane frame storage. Fabricated in a standard digital 0.35 micrometer digital CMOS technology, the latter device includes a photodetector, a charge-integrating amplifier and an array of 64 sample circuits per pixel. Finally, a 100+ M-frames/s solid-state "streak camera" prototype is discussed which, in conjunction with the possible use of 3-D packaging techniques, may yield a sensor array capable of acquiring images at rates exceeding 10 T-pixels/s.

关键词： high-speed low noise active reset CMOS image sensor streak camera

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Type-ii Superlattice Infrared Detector Technology at Fraunhofer IAF 42

Type-II Superlattice Infrared Detector Technology at Fraunho...

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42 conference on Infrared Technology and applications XLii

作者： Rehm, Robert Daumer, Volker Hugger, Tsvetelina Kohn, Norbert Luppold, Wolfgang Mueller, Raphael Niemasz, Jasmin Schmidt, Johannes Rutz, Frank Stadelmann, Tim Wauro, Matthias Woerl, Andreas Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510600607

For more than two decades, Antimony-based type-ii superlattice photodetectors for the infrared spectral range between 3-15 mu m are under development at the Fraunhofer Institute for Applied solid state Physics (IAF). Today, Fraunhofer IAF is Germany's only national foundry for InAs/GaSb type-ii superlattice detectors and we cover a wide range of aspects from basic materials research to small series production in this field. We develop single-element photodetectors for sensing systems as well as two-dimensional detector arrays for high-performance imaging and threat warning systems in the mid-wavelength and long-wavelength region of the thermal infrared. We continuously enhance our production capabilities by extending our in-line process control facilities. As a recent example, we present a semiautomatic wafer probe station that has developed into an important tool for electrooptical characterization. A large amount of the basic materials research focuses on the reduction of the dark current by the development of bandgap engineered device designs on the basis of heterojunction concepts. Recently, we have successfully demonstrated Europe's first LWIR InAs/GaSb type-ii superlattice imager with 640x512 pixels with 15 mu m pitch. The demonstrator camera already delivers a good image quality and achieves a thermal resolution better than 30 mK.

关键词： InAs/GaSb type-ii superlattice photodetector T2SL MWIR LWIR

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Type-ii superlattices - a promising material for space applications

Type-II superlattices - a promising material for space appli...

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International conference on Space Optics (ICSO)

作者： Daumer, V. Rutz, F. Woerl, A. Niemasz, J. Mueller, R. Stadelmann, T. Rehm, R. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510630772

Type-ii superlattices (T2SLs) are currently recognized as the sole material system offering comparable performance to HgCdTe, yet providing higher operability, stability over time, spatial uniformity, scalability to larger formats, producibility and affordability. Hence, T2SL technology is very promising for space applications. Fraunhofer IAF played a vital role in the development of iiI-As/Sb T2SLs right from the beginning. Mono- and bi-spectral focal plane arrays up to 640x512 pixels for the mid- and long-wavelength infrared (IR) have been demonstrated. The growth of T2SL is performed by molecular beam epitaxy (MBE) in multi-wafer reactors. We report on the excellent homogeneity and reproducibility of the growth process, established in the past years at Fraunhofer IAF. After processing this material to detector arrays, the T2SL detectors have been characterized down to low temperatures (below 40K) with promising properties regarding the dark current. For MWIR and LWIR detectors the resolution limit of the measurement setup with a dark current density of 2x10(-10) A/cm(2) has been reached at 77 K and 36 K, respectively.

关键词： MWIR LWIR InAs/GaSb type-ii superlattice T2SL molecular beam epitaxy MBE

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Utilizing a chronopotentiometric sensor technique for metallothionein determination in fish tissues and their host parasites

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sensorS AND ACTUATORS B-CHEMICAL 2007年第1期127卷 112-119页

作者： Petrlova, Jitka Krizkova, Sona Zitka, Ondrej Hubalek, Jaromir Prusa, Richard Adam, Vojtech Wang, Joseph Beklova, Miroslava Sures, Bernd Kizek, Rene Mendel Univ Brno Dept Chem & Biochem CZ-61300 Brno Czech Republic Mendel Univ Brno Dept Anim Nutr & Forage Prod CZ-61300 Brno Czech Republic Brno Univ Technol Dept Microelect CZ-60200 Brno Czech Republic Charles Univ Prague Fac Med 2 Dept Clin Biochem & Pathobiochem CZ-15006 Prague 5 Czech Republic Arizona State Univ Dept Chem & Mat Engn Tempe AZ 85287 USA Arizona State Univ Dept Chem Tempe AZ 85287 USA Univ Vet & Pharmaceut Sci Dept Vet Ecol & Environm Protect CZ-61242 Brno Czech Republic Univ Duisburg Essen D-45117 Essen Germany

Metallothionein (MT) are a class of intracellular proteins possessing cysteme-rich and heavy metal-binding properties. They can be utilized as biomarkers for the detection and assessment of heavy metals in environmental pollution. This paper addresses the development of a sensor technique suitable for the determination of MT in the tissue samples of perches and their parasites. The work suggest a heavy metal biosensor based on interaction of heavy metals (lead(H), cadmium(H), copper(ii) and silver(l)) with MT using adsorptive transfer stripping (AdTS) technique in combination with chronopotentiometric stripping analysis. The samples were investigated with various heavy metals (lead(H), cadmium(H), copper(H) and silver(l)), prior to sensor applications to understand the interaction between MT and the metals. The results obtained from this experiment clearly show that cadmium(ii) had the highest affinity for MT followed by silver(l), copper(H) and lead(H). Based on these results, we attempted to quantify MT content with respect to content of a heavy metal in the samples of interest. The highest re-evaluated concentration of MT (495 ng/g of fresh weight) was determined in samples of Acanthocephalus anguillae. (c) 2007 Elsevier B.V. All rights reserved.

关键词： metallothionem sensor electrochemical detection peak H perch (Perca fluviatilis) parasites Acanthocephalus lucii and Acanthocephalus anguillae heavy metals

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2010 IEEE Asian solid-state Circuits conference, A-SSCC 2010

2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

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2010 6th IEEE Asian solid-state Circuits conference, A-SSCC 2010

ISBN: (纸本)9781424482979

The proceedings contain 97 papers. The topics discussed include: future television - super hi-vision and beyond;asymmetric cross-coupled sense amplifier for small-sized 0.5-V gigabit-DRAM arrays;a 28 nm dual-port SRAM macro with screening circuitry against write-read disturb failure;a multi-mode digital controller with windowed ADC and self-calibrated DPWM for slew-enhanced switching converter;a 1-V input, 0.2-V to 0.47-V output switched-capacitor DC-DC converter with pulse density and width modulation (PDWM) for 57% ripple reduction;an ultra-low-cost RFID tag with 1.67 Gbps data rate by ink-jet printing on paper substrate;low noise capacitive sensor for multi-touch mobile handset's applications;a 31mA CMOS wideband BD-ii B2&B3 mode receiver with 55dB gain dynamic range;a high-speed, on-chip implementation of Teager Kaiser operator for in-band interference rejection;a 40-GHz phase-locked loop for 60-GHz sliding-IF transceivers in 65nm CMOS;and a 0.45V-to-2.7V inductive-coupling level shifter.

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development of a CdZnTe-based small field of view gamma camera

Development of a CdZnTe-based small field of view gamma came...

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conference on Penetrating Radiation Systems and applications iiI

作者： Parnham, K Grosholz, J Davis, RK Vydrin, S Cupec, CA II VI Inc Ev Prod Saxonburg PA 16056 USA

ISBN: (纸本)0819442224

The interest in the use of CdZnTe room-temperature, solid-state detectors for Nuclear Medicine applications continues to grow. Efforts are underway at several companies and institutes to develop CdZnTe detector systems to compete with existing scintillator-based Large Field of View (LFOV) gamma cameras. eV PRODUCTS is focusing on the development of Small Field of View (SFOV) gamma cameras using monolithic CdZnTe detector arrays coupled to custom designed, low noise analog read-out electronics. Electronic noise in the ASIC's has been minimized, and is typically less than 100 e rms (OpF). The detector readout system has the capability to perform automatic energy calibration, gain setting and discrimator level setting, along with a comprehensive self-diagnostic routine. The complete integrated unit includes a bias voltage generator, counters and communication control. A first prototype 256-channel device has been developed and constructed, with pixel dimensions of 1.8 x 1.8 mm(2), on a 34 x 34 x 5mm3 monolithic CdZnTe detector. Results obtained from this system will be presented, showing both the energy resolution and uniformity data for several arrays. The energy resolution has been demonstrated to be 3-5% FWHM @ 140 keV, with photopeak efficiencies of 70-80%.

关键词： CdZnTe small field of view gamma camera ASIC energy resolution photopeak efficiency

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New infrared sensors for ballistic missile defense

New infrared sensors for ballistic missile defense

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conference on Quantum Sensing and Nanophotonic Devices ii

作者： Tidrow, MZ Missile Def Agcy Adv Syst Washington DC 20301 USA

ISBN: (纸本)081945706X

The MDA/AS is developing advanced capabilities in the IR sensor area for ballistic missile defense. Infrared sensors play an important role to every layer of ballistic missile defense systems. Current missile defense systems use infrared sensors with material systems such as InSb and HgCdTe. They are sufficient to counter current threat level. However, with the Missile Defense Agency's (MDA) new capability based acquisition, the Advanced Systems (AS) of MDA is pushing the state-of-the-art of infrared technology to a higher level. The new infrared sensors will have the capability to cover a broad range of spectrum, have higher sensitivity, uniformity and operabilities, large format, multicolor, with a much better manufacturability and affordability. Examples are strained layer type-ii superlattices, quantum well infrared photodetectors, HgCdTe on Si, PbSnTe, and other novel concepts. This presentation will discuss what IR sensors are used in current missile defense systems, what is new in technology development, and it's system applications.

关键词： sensors Mercury cadmium telluride Infrared sensors Missiles Quantum well infrared photodetectors Staring arrays Defense and security Silicon Defense systems Quantum efficiency

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A Scalable and Adaptable Probabilistic Model Embedded in an Electronic Nose for Intelligent sensor Fusion 11

A Scalable and Adaptable Probabilistic Model Embedded in an ...

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11th IEEE Annual Biomedical Circuits and Systems conference (BioCAS)

作者： Tang, Chen-Ting Huang, Cheng-Ming Tang, Kea-Tiong Chen, Hsin Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan

ISBN: (纸本)9781479972340

The electronic nose (eNose) mimicking the mammalian olfactory system has each sensor respond to different odours to different extents. However, the real environment contains multiple odours interacting with each other, such that the sensory signals of an eNose exhibit high variability and the responses to different odours usually overlap with each other. This paper presents the development of a scalable and adaptable probabilistic model for recognising eNose signals and realising the model as customer- designed integrated circuits. The scalability refers to interconnecting multiple chips to form a large network of probabilistic model for processing high-dimensional sensory signals, or to form a multi-expert system that is able to estimate the likelihood of belonging to different types of odours. The latter case could provide extra information for clinical diagnosis. Furthermore, on-chip adaptability is incorporated to learn new data distribution or variability in real time. By integrating the adaptable probabilistic model with eNose sensor arrays, analog-to-digital converters, and a digital processor on a single chip, an intelligent eNose microsystem will be formed for a variety of biomedical applications.

关键词： probabilistic models recognising eNose signals scalable architecture on-chip learning ability

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The development of 3^rd Gen IR Detectors at AIM

The Development of 3<SUP>rd</SUP> Gen IR Detectors at AIM

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conference on Infrared Technology and applications XXXVii

作者： Ziegler, J. Eich, D. Mahlein, M. Schallenberg, T. Scheibner, R. Wendler, J. Wenisch, J. Wollrab, R. Daumer, V. Rehm, R. Rutz, F. Walther, M. AIM Infrarot Module GmbH Theresienstr 2 D-74072 Heilbronn Germany Fraunhofer Inst Appl Solid State Phys D-79108 Freiburg Germany

ISBN: (纸本)9780819485861

3rd generation IR modules - dual-color (DC), dual-band (DB), and large format two-dimensional arrays - require sophisticated production technologies such as molecular beam epitaxy (MBE) as well as new array processing techniques, which can satisfy the rising demand for increasingly complex device structures and low cost detectors. AIM will extend its future portfolio by high performance devices which make use of these techniques. The DC MW / MW detectors are based on antimonide type-ii superlattices (produced by MBE at Fraunhofer IAF, Freiburg) in the 384x288 format with a 40 mu m pitch. For AIM, the technology of choice for MW / LW DB FPAs is MCT MBE on CdZnTe substrates, which has been developed in cooperation with IAF, Freiburg. 640x512, 20 mu m pitch Focal Plane arrays (FPAs) have been processed at AIM. The growth of MW MCT MBE layers on alternate substrates is challenging, but essential for competitive fabrication of large two-dimensional arrays such as megapixel (MW 1280x1024, 15 mu m pitch) FPAs. This paper will present the development status and latest results of the above-mentioned 3rd Gen FPAs and Integrated Detector Cooler Assemblies (IDCAs).

关键词： Infrared detectors 3rd generation detectors HgCdTe MCT dual color dual band MW / LW megapixel MBE antimonide type-ii superlattices T2SL

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Infrared photodetector development at Fraunhofer IAF

Infrared photodetector development at Fraunhofer IAF

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conference on Quantum Sensing and Nanophotonic Devices XI

作者： Rutz, F. Kleinow, P. Walther, M. Aidam, R. Bronner, W. Kirste, L. Niemasz, J. Rehm, R. Schmitz, J. Stadelmann, T. Wauro, M. Woerl, A. Sieck, A. Ziegler, J. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany AIM Infrarot Module GmbH D-74072 Heilbronn Germany

ISBN: (纸本)9780819499066

Fraunhofer IAF can look back on many years of expertise in developing high-performance infrared photodetectors. Since pioneering the InAs/GaSb type-ii superlattice detector development, extensive capabilities of epitaxy, process technology, and device characterization of single element detectors and camera arrays for the mid-and longwave infrared (MWIR and LWIR) have been established up to the level of small-scale production. Bispectral MWIR/MWIR and MWIR/LWIR cameras based on type-ii superlattices or HgCdTe are key topics at Fraunhofer IAF. Recently, we started the development of InGaAs-based short-wave infrared (SWIR) photodetectors for low-light-level applications. In this contribution, we report on materials and technology development for SWIR p-i-n and avalanche photodiodes (APDs), covering detector design, epitaxial growth, process technology, and most recent electro-optical characterization results of focal plane arrays as well as single element detectors.

关键词： SWIR InGaAs photodiode APD InAs/GaSb superlattice dual-color MWIR LWIR

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