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conference on Laser Radar Technology and applications ViiI

作者： Marino, RM Stephens, T Hatch, RE McLaughlin, JL Mooney, JG O'Brien, ME Rowe, GS Adams, JS Skelly, L Knowlton, RC Forman, SE Davis, WR MIT Lincoln Lab Lexington MA 02420 USA

ISBN: (纸本)0819449458

MIT Lincoln Laboratory continues the development of novel high-resolution 3D imaging laser radar technology and sensor systems. The sensor system described in detail here uses a passively Q-switched solid-state frequency-doubled Nd:YAG laser to transmit short laser pulses (similar to 700 ps FWHM) at 532 rim wavelength and derive the range to target surface element by measuring the time-of-flight for each pixel. The single photoelectron detection efficiency has been measured to be > 20 % using these Silicon Geiger-mode APDs at room temperature. The pulse out of the detector is used to stop a > 500 MHz digital clock integrated within the focal-plane array. With appropriate optics, the 3202 array of digital time values represents a 3D spatial image frame of the scene. Successive image frames from the multi-kilohertz pulse repetition rate laser pulses are accumulated into range histograms to provide 3D volume and intensity information. In this paper, we report on a prototype sensor system, which has recently been developed using new 32x32 arrays of Geiger-mode APDs with 0.35 mum CMOS digital timing circuits at each pixel. Here we describe the sensor system development and present recent measurements of laboratory test data and field imagery.

关键词： laser radar ladar 3D imaging photon counting avalanche photodiode array

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Type-ii superlattices - a promising material for space applications

Type-II superlattices - a promising material for space appli...

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International conference on Space Optics (ICSO)

作者： Daumer, V. Rutz, F. Woerl, A. Niemasz, J. Mueller, R. Stadelmann, T. Rehm, R. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510630772

Type-ii superlattices (T2SLs) are currently recognized as the sole material system offering comparable performance to HgCdTe, yet providing higher operability, stability over time, spatial uniformity, scalability to larger formats, producibility and affordability. Hence, T2SL technology is very promising for space applications. Fraunhofer IAF played a vital role in the development of iiI-As/Sb T2SLs right from the beginning. Mono- and bi-spectral focal plane arrays up to 640x512 pixels for the mid- and long-wavelength infrared (IR) have been demonstrated. The growth of T2SL is performed by molecular beam epitaxy (MBE) in multi-wafer reactors. We report on the excellent homogeneity and reproducibility of the growth process, established in the past years at Fraunhofer IAF. After processing this material to detector arrays, the T2SL detectors have been characterized down to low temperatures (below 40K) with promising properties regarding the dark current. For MWIR and LWIR detectors the resolution limit of the measurement setup with a dark current density of 2x10(-10) A/cm(2) has been reached at 77 K and 36 K, respectively.

关键词： MWIR LWIR InAs/GaSb type-ii superlattice T2SL molecular beam epitaxy MBE

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Recent advances in biologically sensitive field-effect transistors (BioFETs)

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ANALYST 2002年第9期127卷 1137-1151页

作者： Schöning, MJ Poghossian, A Univ Appl Sci Aachen D-52428 Julich Germany Forschungszentrum Julich Inst Thin Films & Interfaces D-52425 Julich Germany

Thirty years have elapsed since the invention of the ISFET by Bergveld. Since that time, various types of BioFETs have been developed using different biological recognition elements starting with enzymes and immunological species through DNA molecules to living cells and even living organisms. The study of the current state of BioFETs reveals that some BioFETs, like EnFETs are at a well-developed stage, whereas other BioFETs such as GenFETs and beetle/chip FETs are in the initial stages of development. There are still a number of fundamental and technological problems that must be overcome, before the first reliable BioFET-based bioanalytical microsystem will appear on the market. Therefore, intensive interdisciplinary research and cooperation of specialists from different disciplines is still required, not only in the field of biotechnology and bioengineer- ing but also in related disciplines, like informatics, solid-state physics, microtechnology, genetics as well as specific tech- niques such as sensor integration and packaging, interfacing circuits, etc. Hence, future prospects for BioFET developments can be expected in the following directions: (i) BioFETs utilising intact biological receptors (ion channel receptors, binding proteins, etc.) that bind specific drugs and reagents in such a way that they produce a conformational change in the protein structure. This conformational change, in turns, triggers a cellular response, (e.g., the opening of an ion channel of the membrane (so-called ion-channel switch biosensor); (ii) ISFET-based DNA chips can be considered as a new tool for the simultaneous analysis of thousands of nucleic acids with a broad area of potential applications in biomedical research and clinical diagnostics, genomics, drug screening, environmental monitor- ing and food industry. They combine both the possibility of direct DNA hybridisation detection without the use of labelled probes and the large integration ability of these active microelect

关键词： Glucose Oxidase chemical analysis micro total analysis systems Field effect transistors Biosensors signal acquisition biological organs hybrid systems Electronic Nose Oxygen electrodes sensor arrays Si technology

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High-speed, high-sensitivity, low-noise scientific CMOS image sensors

High-speed, high-sensitivity, low-noise scientific CMOS imag...

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conference on Microelectronics - Design, Technology and Packaging

作者： Kleinfelder, S Univ Calif Irvine Irvine CA 92697 USA

ISBN: (纸本)0819451673

Image sensors for scientific applications face unusually demanding performance requirements for speed, sensitivity, noise, dynamic range and data throughput. Dynamic proton radiography, for example, requires both extremely high frame rates (multi-MHz) and high dynamic range (similar to80 dB). Electron microscopy, particle physics, nuclear science and astrophysics applications requires high sensitivity and low noise for single-photon/single charged particle efficiency, often in extremely large (>100 M-pixel) arrays with tremendous sustained throughput (>50 G-pixels/s) and radiation-tolerance. This paper covers recent research results that extend standard CMOS image sensor performance in these areas. Signal to noise ratios as high as 90 dB have been achieved using a new, low-overhead, column-level active reset technique. This image sensor achieves output noise levels of similar to45 microvolts, rms, without the use of correlated double sampling. Enhanced sensitivity for single-photon detection has been obtained by using an epitaxial silicon region as a higher cross-section CMOS sensor, with low-capacitance diode or large-area pbotogate charge collection. This development has made possible the use of standard 0.25 micrometer digital CMOS sensor arrays in place of expensive hybrid high-resistivity silicon sensor focal plane arrays plus CMOS readout circuit combinations. High-speed transient image sensors with frame rates as high as 10 M-frames/s, combined with 13-bit resolution, has been achieved using on-focal-plane frame storage. Fabricated in a standard digital 0.35 micrometer digital CMOS technology, the latter device includes a photodetector, a charge-integrating amplifier and an array of 64 sample circuits per pixel. Finally, a 100+ M-frames/s solid-state "streak camera" prototype is discussed which, in conjunction with the possible use of 3-D packaging techniques, may yield a sensor array capable of acquiring images at rates exceeding 10 T-pixels/s.

关键词： high-speed low noise active reset CMOS image sensor streak camera

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development of a CdZnTe-based small field of view gamma camera

Development of a CdZnTe-based small field of view gamma came...

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conference on Penetrating Radiation Systems and applications iiI

作者： Parnham, K Grosholz, J Davis, RK Vydrin, S Cupec, CA II VI Inc Ev Prod Saxonburg PA 16056 USA

ISBN: (纸本)0819442224

The interest in the use of CdZnTe room-temperature, solid-state detectors for Nuclear Medicine applications continues to grow. Efforts are underway at several companies and institutes to develop CdZnTe detector systems to compete with existing scintillator-based Large Field of View (LFOV) gamma cameras. eV PRODUCTS is focusing on the development of Small Field of View (SFOV) gamma cameras using monolithic CdZnTe detector arrays coupled to custom designed, low noise analog read-out electronics. Electronic noise in the ASIC's has been minimized, and is typically less than 100 e rms (OpF). The detector readout system has the capability to perform automatic energy calibration, gain setting and discrimator level setting, along with a comprehensive self-diagnostic routine. The complete integrated unit includes a bias voltage generator, counters and communication control. A first prototype 256-channel device has been developed and constructed, with pixel dimensions of 1.8 x 1.8 mm(2), on a 34 x 34 x 5mm3 monolithic CdZnTe detector. Results obtained from this system will be presented, showing both the energy resolution and uniformity data for several arrays. The energy resolution has been demonstrated to be 3-5% FWHM @ 140 keV, with photopeak efficiencies of 70-80%.

关键词： CdZnTe small field of view gamma camera ASIC energy resolution photopeak efficiency

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Type ii superlattice infrared photodetector research at Fraunhofer IAF 44

Type II superlattice infrared photodetector research at Frau...

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conference on Infrared Technology and applications XLIV

作者： Stadelmann, T. Daumer, V. Gramich, V. Hugger, T. Kirste, L. Klinger, V. Kohn, N. Luppold, W. Mueller, R. Niemasz, J. Rehm, R. Rutz, F. Schmidt, J. Walther, M. Wauro, M. Woerl, A. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510617605

Through the choice of appropriate layer thicknesses, the bandgap of InAs/Ga(As) Sb type ii superlattices (T2SLs) can be engineered in a wide range covering the mid-wavelength and long-wavelength infrared (MWIR, 3 mu m-5 mu m and LWIR, 8 mu m-12 mu m) spectral regions. Using this material system, Fraunhofer IAF develops bi-spectral MWIR image sensors based on homojunction photodiodes for missile warning applications and pursues modern heterojunction approaches as well as heteroepitaxial growth of T2SLs on GaAs. We discuss topics arising from efforts to improve the manufacturability of our bi-spectral arrays and report on the progress of the integration with MWIR heterojunction designs that exhibit reduced dark currents.

关键词： MWIR LWIR InAs/GaSb T2SL infrared photodetector image sensor

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The development of 3^rd Gen IR Detectors at AIM

The Development of 3<SUP>rd</SUP> Gen IR Detectors at AIM

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conference on Infrared Technology and applications XXXVii

作者： Ziegler, J. Eich, D. Mahlein, M. Schallenberg, T. Scheibner, R. Wendler, J. Wenisch, J. Wollrab, R. Daumer, V. Rehm, R. Rutz, F. Walther, M. AIM Infrarot Module GmbH Theresienstr 2 D-74072 Heilbronn Germany Fraunhofer Inst Appl Solid State Phys D-79108 Freiburg Germany

ISBN: (纸本)9780819485861

3rd generation IR modules - dual-color (DC), dual-band (DB), and large format two-dimensional arrays - require sophisticated production technologies such as molecular beam epitaxy (MBE) as well as new array processing techniques, which can satisfy the rising demand for increasingly complex device structures and low cost detectors. AIM will extend its future portfolio by high performance devices which make use of these techniques. The DC MW / MW detectors are based on antimonide type-ii superlattices (produced by MBE at Fraunhofer IAF, Freiburg) in the 384x288 format with a 40 mu m pitch. For AIM, the technology of choice for MW / LW DB FPAs is MCT MBE on CdZnTe substrates, which has been developed in cooperation with IAF, Freiburg. 640x512, 20 mu m pitch Focal Plane arrays (FPAs) have been processed at AIM. The growth of MW MCT MBE layers on alternate substrates is challenging, but essential for competitive fabrication of large two-dimensional arrays such as megapixel (MW 1280x1024, 15 mu m pitch) FPAs. This paper will present the development status and latest results of the above-mentioned 3rd Gen FPAs and Integrated Detector Cooler Assemblies (IDCAs).

关键词： Infrared detectors 3rd generation detectors HgCdTe MCT dual color dual band MW / LW megapixel MBE antimonide type-ii superlattices T2SL

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Infrared photodetector development at Fraunhofer IAF

Infrared photodetector development at Fraunhofer IAF

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conference on Quantum Sensing and Nanophotonic Devices XI

作者： Rutz, F. Kleinow, P. Walther, M. Aidam, R. Bronner, W. Kirste, L. Niemasz, J. Rehm, R. Schmitz, J. Stadelmann, T. Wauro, M. Woerl, A. Sieck, A. Ziegler, J. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany AIM Infrarot Module GmbH D-74072 Heilbronn Germany

ISBN: (纸本)9780819499066

Fraunhofer IAF can look back on many years of expertise in developing high-performance infrared photodetectors. Since pioneering the InAs/GaSb type-ii superlattice detector development, extensive capabilities of epitaxy, process technology, and device characterization of single element detectors and camera arrays for the mid-and longwave infrared (MWIR and LWIR) have been established up to the level of small-scale production. Bispectral MWIR/MWIR and MWIR/LWIR cameras based on type-ii superlattices or HgCdTe are key topics at Fraunhofer IAF. Recently, we started the development of InGaAs-based short-wave infrared (SWIR) photodetectors for low-light-level applications. In this contribution, we report on materials and technology development for SWIR p-i-n and avalanche photodiodes (APDs), covering detector design, epitaxial growth, process technology, and most recent electro-optical characterization results of focal plane arrays as well as single element detectors.

关键词： SWIR InGaAs photodiode APD InAs/GaSb superlattice dual-color MWIR LWIR

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2010 IEEE Asian solid-state Circuits conference, A-SSCC 2010

2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

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2010 6th IEEE Asian solid-state Circuits conference, A-SSCC 2010

ISBN: (纸本)9781424482979

The proceedings contain 97 papers. The topics discussed include: future television - super hi-vision and beyond;asymmetric cross-coupled sense amplifier for small-sized 0.5-V gigabit-DRAM arrays;a 28 nm dual-port SRAM macro with screening circuitry against write-read disturb failure;a multi-mode digital controller with windowed ADC and self-calibrated DPWM for slew-enhanced switching converter;a 1-V input, 0.2-V to 0.47-V output switched-capacitor DC-DC converter with pulse density and width modulation (PDWM) for 57% ripple reduction;an ultra-low-cost RFID tag with 1.67 Gbps data rate by ink-jet printing on paper substrate;low noise capacitive sensor for multi-touch mobile handset's applications;a 31mA CMOS wideband BD-ii B2&B3 mode receiver with 55dB gain dynamic range;a high-speed, on-chip implementation of Teager Kaiser operator for in-band interference rejection;a 40-GHz phase-locked loop for 60-GHz sliding-IF transceivers in 65nm CMOS;and a 0.45V-to-2.7V inductive-coupling level shifter.

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A Scalable and Adaptable Probabilistic Model Embedded in an Electronic Nose for Intelligent sensor Fusion 11

A Scalable and Adaptable Probabilistic Model Embedded in an ...

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11th IEEE Annual Biomedical Circuits and Systems conference (BioCAS)

作者： Tang, Chen-Ting Huang, Cheng-Ming Tang, Kea-Tiong Chen, Hsin Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan

ISBN: (纸本)9781479972340

The electronic nose (eNose) mimicking the mammalian olfactory system has each sensor respond to different odours to different extents. However, the real environment contains multiple odours interacting with each other, such that the sensory signals of an eNose exhibit high variability and the responses to different odours usually overlap with each other. This paper presents the development of a scalable and adaptable probabilistic model for recognising eNose signals and realising the model as customer- designed integrated circuits. The scalability refers to interconnecting multiple chips to form a large network of probabilistic model for processing high-dimensional sensory signals, or to form a multi-expert system that is able to estimate the likelihood of belonging to different types of odours. The latter case could provide extra information for clinical diagnosis. Furthermore, on-chip adaptability is incorporated to learn new data distribution or variability in real time. By integrating the adaptable probabilistic model with eNose sensor arrays, analog-to-digital converters, and a digital processor on a single chip, an intelligent eNose microsystem will be formed for a variety of biomedical applications.

关键词： probabilistic models recognising eNose signals scalable architecture on-chip learning ability

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