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检索条件"任意字段=Conference on Solid State Sensor Arrays - Development and Applications II"
106 条 记 录,以下是81-90 订阅
排序:
A memory read-out approach for a 0.5 μm CMOS image sensor
A memory read-out approach for a 0.5 μm CMOS image sensor
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conference on solid state sensor arrays - development and applications ii
作者: Hoekstra, W van der Avoird, A Kole, M Schrooten, GG Schaeffer, CJ Philips Imaging Technol Eindhoven Netherlands
In image sensors with passive pixels the column capacitance is large compared to the capacitance of the pixel. The charge-to-voltage conversion occurs in the column amplifier relatively far from the pixel. This may re... 详细信息
来源: 评论
Improving resolution of solid-state linear array X-Ray detectors
Improving resolution of solid-state linear array X-Ray detec...
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conference on solid state sensor arrays - development and applications ii
作者: Borras, G Odet, C Vuorinen, K Gaffiot, F Jacquemod, G Inst Natl Sci Appl CREATIS F-69621 Villeurbanne France
Linear solid-state detectors are nowadays a widespread media in industrial and medical X-ray imaging. The resolution reached with this systems has been largely improved in this past years, but is still too poor for so... 详细信息
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A time delay and integration image sensor with high speed output architecture
A time delay and integration image sensor with high speed ou...
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conference on solid state sensor arrays - development and applications ii
作者: Weale, GP Flood, CJ Dykaar, DR DALSA Inc Waterloo ON N2V 2E9 Canada
Today's imaging systems utilize fast operation to increase their throughput. At high line rates the illumination required to collect a reasonable image becomes prohibitive. Time delay and integration (TDI) offers ... 详细信息
来源: 评论
Design and characterization of CMOS APS imagers on two different technologies
Design and characterization of CMOS APS imagers on two diffe...
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conference on solid state sensor arrays - development and applications ii
作者: Cavadore, C Solhusvik, J Magnan, P Gautrand, A Degerli, Y Lavernhe, F Farre, J Saint-Pe, O Davancens, R Tulet, M SUPAERO Dept Elect F-31055 Toulouse 4 France
In this paper, we present experimental results from measurements on CMOS APS imager designed by CIMI-SUPAERO on two different technologies. In both cases, pixels with photoMos and photodiode structures have been desig... 详细信息
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Large format CID x-ray image sensor
Large format CID x-ray image sensor
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conference on solid state sensor arrays - development and applications ii
作者: Carbone, J Alam, Z Borman, C Czebiniak, S Ziegler, H CIDTEC Liverpool NY 13088 USA
A large format (31 x 23 mm(2) display) CID imager module capitalizes on CID large well capacity and radiation resistance to image dental x-rays. The module, which consists of the imager, conversion phosphor and ancill... 详细信息
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Charge-transfer-efficiency (CTE) measurement techniques applied to proton-irradiated, linear charge-coupled devices
Charge-transfer-efficiency (CTE) measurement techniques appl...
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conference on solid state sensor arrays - development and applications ii
作者: Dutton, TE Woodward, WF Lomheim, TS Aerospace Corp Sensor Syst Subdiv Los Angeles CA 90009 USA
Charge-Transfer-Efficiency (CTE) is a parameter that is associated with the optical performance and radiometric accuracy of a Charge-Coupled Device (CCD). While modern CCD's are typically quoted as having CTE>0... 详细信息
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A high speed linear CCD sensor with pinned photodiode photosite for low lag and low noise imaging
A high speed linear CCD sensor with pinned photodiode photos...
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conference on solid state sensor arrays - development and applications ii
作者: Fox, EC Nixon, O Agwani, MS Dykaar, DR Mantell, TJ Sabila, RW DALSA Inc Waterloo ON N2V 2E9 Canada
Photodiode devices, in which the photosite consists of a reverse biased pn diode, have excellent quantum efficiencies at visible wavelengths and in the UV. However they display high levels of dark and bright image lag... 详细信息
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Study of pixel structure and layout for CMOS Active Pixel Image sensor
Study of pixel structure and layout for CMOS Active Pixel Im...
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conference on solid state sensor arrays - development and applications ii
作者: iida, Y Oba, E Mabuchi, K Nakamura, N Yamaguchi, T Ihara, H Nozaki, H Toshiba Ctr Res & Dev Adv Semicond Devices Res Labs Kawasaki Kanagawa Japan
Shrinkage of pixel structures and layouts for CMOS Active Pixel Image sensors (APS's) are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using... 详细信息
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Light emitting diode arrays for consumer and medical applications
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MATERIALS SCIENCE AND ENGINEERING B-solid state MATERIALS FOR ADVANCED TECHNOLOGY 1998年 第1-3期51卷 90-93页
作者: Rys, A Piotrowski, T Sobczynski, R Kansas State Univ Dept Elect & Comp Engn Manhattan KS 66506 USA Inst Electron Technol PL-02668 Warsaw Poland Hadaspectrum PL-04831 Warsaw Poland
development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in ... 详细信息
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Light emitting diode arrays for consumer and medical applications
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Materials science & engineering. B, solid-state materials for advanced technology 1998年 第1-3期B51卷 90-93页
作者: Rys, Andrew Piotrowski, Tadeusz Sobczynski, Radoslaw Kansas State Univ Manhattan United States
development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in ... 详细信息
来源: 评论