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arXiv 2023年

作者： Wang, Guoqing Madonini, Francesca Li, Boning Li, Changhao Xiang, Jinggang Villa, Federica Cappellaro, Paola Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA02139 United States Department of Nuclear Science and Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Politecnico di Milano Piazza Leonardo da Vinci 32 Milano20133 Italy Department of Physics Massachusetts Institute of Technology CambridgeMA02139 United States

Achieving fast, sensitive, and parallel measurement of a large number of quantum particles is an essential task in building large-scale quantum platforms for different quantum information processing applications such as sensing, computation, simulation, and communication. Current quantum platforms in experimental atomic and optical physics based on CMOS sensors and ccd cameras are limited by either low sensitivity or slow operational speed. Here we integrate an array of single-photon avalanche diodes with solid-state spin defects in diamond to build a fast wide-field quantum sensor, achieving a frame rate up to 100 kHz. We present the design of the experimental setup to perform spatially resolved imaging of quantum systems. A few exemplary applications, including sensing DC and AC magnetic fields, temperature, strain, local spin density, and charge dynamics, are experimentally demonstrated using an NV ensemble diamond sample. The developed photon detection array is broadly applicable to other platforms such as atom arrays trapped in optical tweezers, optical lattices, donors in silicon, and rare earth ions in solids. Copyright © 2023, The Authors. All rights reserved.

关键词： Optical lattices

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Global Shutter solid state Flash LIDAR for Spacecraft Navigation and Docking Applications 24

Global Shutter Solid State Flash LIDAR for Spacecraft Naviga...

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conference on Laser Radar Technology and Applications XXIV

作者： Sornsin, Beth A. Short, Bradley W. Bourbeau, Tyler N. Dahlin, Michael J. Adv Sci Concepts 135 East Ortega St Santa Barbara CA 93101 USA

ISBN: (纸本)9781510626768

Global shutter flash LIDAR is the sensor of choice for space-based autonomous relative navigation applications. Advanced Scientific Concepts (ASC) has recently delivered LIDAR cameras to the NASA / Lockheed- Martin OSIRS-Rex and the NASA / Boeing CST-100 Starliner programs. These are two of the first operational space programs to use global shutter, flash LIDAR based relative navigation systems. The OSIRIS-REx spacecraft was launched in September 2016 and is the first opportunity to understand how global shutter flash LIDAR performance and reliability is impacted by long term exposure to the deep space environment.

关键词： LIDAR Space operations Camera shutters sensors Staring arrays Laser stabilization Avalanche photodetectors Semiconductor lasers Asteroids solid state physics 3D image capture Navigation systems Satellite laser ranging Space sensors Spaceflight missions

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Photon counting imaging in the infrared with e-APD arrays 12

Photon counting imaging in the infrared with e-APD arrays

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Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019

作者： Gach, J.L. UMR 7326 Marseille13388 France First Light Imaging Group Europarc Ste Victoire - Route de Valbrillant - Le Canet Meyreuil13590 France

ISBN: (纸本)9781510624764

Since the first photon counting systems in the visible, developped by Boksenberg and his collabortors in 1972, many groups around the world improved photon counting techniques. In the 2000's in the visible, EMccdSs (electron multiplying charge coupled devices) allowed to replace the classical image intensifier photon counting systems by solid state devices and improved a lot the QE. But EMccds suffer from several issues, and the most important of them is the excess noise factor which prevents to know what is the exact incoming number pf photons in the case of multiple photons per pixel. In the infrared there was no equivalent to EMccds up to the development of e-APD sensors and cameras made with HgCdTe material (electron initiated avalanche photo diode). We will present the concepts of photon counting in the infrared with such devices and the main properties and advantages of infrared e-APDs compared to their visible counterpart, EMccds and the possibility to detect the photon energy (color) with such devices. © 2019 SPIE.

关键词： II-VI semiconductors

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Dark Current of The solid-state Imagers at High Temperature

Dark Current of The Solid-State Imagers at High Temperature

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IEEE Russia Section Young Researchers in Electrical and Electronic Engineering conference (EIConRus)

作者： Baranov, Pavel S. Litvin, Vladimir T. Belous, Darya A. Mantsvetov, Andrey A. St Petersburg Electrotech Univ LETI Dept Televis & Video Engn St Petersburg Russia Natl Mineral Resources Univ Dept Oil & Gas Fields Dev & Operat St Petersburg Russia St Petersburg State Univ Film & Televis Dept Radio Engn & Informat Technol St Petersburg Russia

ISBN: (纸本)9781509048656

The theoretical analysis of dark currents of area charge-coupled devices (ccd) and CMOS image sensor at high temperatures from 60 to 150 degrees Celsius is carried out. It is shown, that reduction of accumulation time reduces dark currents of photodiodes. Transfer registers dark currents is dominating component in area ccd and defined by temporary parameters of scan. In CMOS image sensor with global shutter the high level of dark current is caused by an element of memory in the pixel. This a component is defined by temporary parameters of scan and coordinates of elements. Thus, CMOS image sensor with the rolling shutter is an optimum choice in case of design of high-temperature Television cameras. Experimental studies are conducted. Theoretical data are confirmed.

关键词： Area ccd CMOS image sensor Dark current High temperature Electronic Shutter

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A 2.1Mpixel Organic-Film Stacked RGB-IR Image sensor with Electrically Controllable IR Sensitivity 64

A 2.1Mpixel Organic-Film Stacked RGB-IR Image Sensor with El...

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64th IEEE International solid-state Circuits conference (ISSCC)

作者： Machida, Shin'ichi Shishido, Sanshiro Tokuhara, Takeyoshi Yanagida, Masaaki Yamada, Takayoshi Izuchi, Masumi Sato, Yoshiaki Miyake, Yasuo Nakata, Manabu Murakami, Masashi Harada, Mitsuru Inoue, Yasunori Panasonic Osaka Japan

ISBN: (纸本)9781509037582

The use of infrared (IR) imaging to view scenes otherwise invisible to the human eye, simultaneously with visible-spectrum imaging, is increasingly of interest for various applications for such as in-vehicle, surveillance, and agricultural security cameras. The loss of spatial resolution in conventional RGB-IR sensors causes aliasing, because IR pixels are segmented within the provided effective pixel area [1,2]. 3-D stacking of photodiode arrays has been reported as another strategy for RGB-IR capture [3];however, the need for bonding accuracy limits pixel size. Silicon's weak IR light absorptivity also results in relatively lower IR sensitivity on the part of these image sensors. © 2017 IEEE.

关键词： Infrared imaging

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4.7 A 2.1Mpixel organic-film stacked RGB-IR image sensor with electrically controllable IR sensitivity

4.7 A 2.1Mpixel organic-film stacked RGB-IR image sensor wit...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： Shin'ichi Machida Sanshiro Shishido Takeyoshi Tokuhara Masaaki Yanagida Takayoshi Yamada Masumi Izuchi Yoshiaki Sato Yasuo Miyake Manabu Nakata Masashi Murakami Mitsuru Harada Yasunori Inoue Panasonic Osaka Japan

ISBN: (纸本)9781509037599

The use of infrared (IR) imaging to view scenes otherwise invisible to the human eye, simultaneously with visible-spectrum imaging, is increasingly of interest for various applications for such as in-vehicle, surveillance, and agricultural security cameras. The loss of spatial resolution in conventional RGB-IR sensors causes aliasing, because IR pixels are segmented within the provided effective pixel area [1,2]. 3-D stacking of photodiode arrays has been reported as another strategy for RGB-IR capture [3]; however, the need for bonding accuracy limits pixel size. Silicon's weak IR light absorptivity also results in relatively lower IR sensitivity on the part of these image sensors.

关键词： Sensitivity Image sensors cameras sensors Electric potential Surveillance

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Testing and Comparison of Imaging Detectors for Electrons in the Energy Range 10-20 keV

Testing and Comparison of Imaging Detectors for Electrons in...

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11th International conference on Position Sensitive Detectors

作者： Matheson, J. Moldovan, G. Kirkland, A. Allinson, N. Abrahams, J. P. Rutherford Appleton Lab Sci & Technol Facil Council Didcot OX11 0AE Oxon England Point Elect GmbH Erich Neus Weg 15 D-06120 Halle Germany Univ Oxford Dept Mat Parks Rd Oxford OX1 3PH England Univ Lincoln Dept Comp Sci Lincoln LN6 7TS England Leiden Univ Leiden Inst Chem POB 9502 NL-2300 RA Leiden Netherlands

Interest in direct detectors for low-energy electrons has increased markedly in recent years. Detection of electrons in the energy range up to low tens of keV is important in techniques such as photoelectron emission microscopy (PEEM) and electron backscatter diffraction (EBSD) on scanning electron microscopes (SEMs). The PEEM technique is used both in the laboratory and on synchrotron light sources worldwide. The ubiquity of SEMs means that there is a very large market for EBSD detectors for materials studies. Currently, the most widely used detectors in these applications are based on indirect detection of incident electrons. Examples include scintillators or microchannel plates (MCPs), coupled to ccd cameras. Such approaches result in blurring in scintillators/phosphors, distortions in optical systems, and inefficiencies due the limited active area of MCPs. In principle, these difficulties can be overcome using direct detection in a semiconductor device. Growing out of a feasibility study into the use of a direct detector for use on an XPEEM, we have built at Rutherford Appleton Laboratory a system to illuminate detectors with an electron beam of energy up to 20 keV. We describe this system in detail. It has been used to measure the performance of a custom back-thinned monolithic active pixel sensor (MAPS), a detector based on the Medipix2 chip, and a commercial detector based on MCPs. We present a selection of the results from these measurements and compare and contrast different detector types.

关键词： solid state detectors Electron multipliers (vacuum) Hybrid detectors

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Dark Current of The solid-state Imagers at High Temperature

Dark Current of The Solid-State Imagers at High Temperature

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IEEE conference of Russian Young Researchers in Electrical and Electronic Engineering

作者： Pavel S. Baranov Darya A. Belous Vladimir T. Litvin Andrey A. Mantsvetov Department of Television and Video Engineering St. Petersburg Electrotechnical University ?LETI? St. Petersburg Russia Department of Oil and Gas Fields Development and Operation National Mineral Resources University St. Petersburg Russia Department of Radio Engineering and Information Technologies St. Petersburg State University of Film and Television St. Petersburg Russia

ISBN: (纸本)9781509048663

关键词： Area ccd CMOS image sensor Dark current High temperature Electronic Shutter

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Solution processed integrated pixel element for an imaging device 9

Solution processed integrated pixel element for an imaging d...

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conference on Organic sensors and Bioelectronics IX

作者： Swathi, K. Narayan, K. S. Jawaharlal Nehru Ctr Adv Sci Res Chem & Phys Mat Unit Bangalore 560064 Karnataka India

ISBN: (数字)9781510602809

ISBN: (纸本)9781510602809

We demonstrate the implementation of a solid state circuit/structure comprising of a high performing polymer field effect transistor (PFET) utilizing an oxide layer in conjunction with a self-assembled monolayer (SAM) as the dielectric and a bulk-heterostructure based organic photodiode as a CMOS-like pixel element for an imaging sensor. Practical usage of functional organic photon detectors requires on chip components for image capture and signal transfer as in the CMOS/ccd architecture rather than simple photodiode arrays in order to increase speed and sensitivity of the sensor. The availability of high performing PFETs with low operating voltage and photodiodes with high sensitivity provides the necessary prerequisite to implement a CMOS type image sensing device structure based on organic electronic devices. Solution processing routes in organic electronics offers relatively facile procedures to integrate these components, combined with unique features of large-area, form factor and multiple optical attributes. We utilize the inherent property of a binary mixture in a blend to phase-separate vertically and create a graded junction for effective photocurrent response. The implemented design enables photocharge generation along with on chip charge to voltage conversion with performance parameters comparable to traditional counterparts. Charge integration analysis for the passive pixel element using 2D TCAD simulations is also presented to evaluate the different processes that take place in the monolithic structure.

关键词： Polymer FET Organic Photodiode image sensor DPP-DTT self-assembly

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Testing and Comparison of Imaging Detectors for Electrons in the Energy Range 10-20 keV

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JOURNAL OF INSTRUMENTATION 2017年第11期12卷

关键词： solid state detectors Electron multipliers (vacuum) Hybrid detectors

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