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IEEE International conference on solid-state Circuits (ISSCC)

作者： K. Itakura T. Nobusada T. Toyoda Y. Saitoh N. Kokusenya R. Nagayoshi H. Tanaka M. Ozaki Electronic Research Laboratory Matsushita Electronics Corporation Osaka Japan

ccds developed to date are designed for specific applications such as NTSC, PAL, Hi-Vision, and so on, so that they are not used for other TV systems. Recently, the applications of the image sensors are expanding, especially multi-media systems and next-generation TV systems. It is strongly desired that camera systems in the future be adaptable to various applications in terms of the inter-operability among the applications. To meet this demand, this multi-use ccd can be used for various applications, by use of "adaptive extraction of image area". This is achieved by the driving method and device technology for ultra-fast charge transfer. This paper demonstrates a 2/3-inch 800k-pixel ccd outputting video formats with different aspect ratios (16:9, 4:3) by use of the adaptive extraction of image area The device has sufficient performance for broadcasting use regardless of the aspect ratio: 140 mV/lx sensitivity, 80 dB dynamic range, -120 dB smear level and 60 dB S/N ratio.

关键词： Charge-coupled image sensors TV Charge coupled devices Image sensors Multimedia systems cameras Charge transfer Multimedia communication Broadcasting Dynamic range

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FAST IMAGING MICROLENSES

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APPLIED OPTICS 1994年第7期33卷 1170-1175页

作者： BINNIE, TD The author is with the Department of Electrical Engineering Napier University 219 Colinton Road Craiglockhart Edinburgh EH14 1DJ United Kingdom.

A new type of imaging microlens, primarily for use with solid-state image-capture systems such as a charge coupled device (ccd) or metal oxide semiconductor array sensors, is described. The design, having less aberration than conventional lenses of similar specification, is particularly advantageous in wide-angle, low-light applications. The lens type is substantially simpler than any existing design. A particular example, a fixed focus f/3.5 lens with a 90-degrees field of view and a depth of field from 2 cm to infinity, is detailed. The lens can be directly bonded to a solid-state array detector and requires no other mechanical support. The lens can be designed and manufactured at low cost and has current applications in surveillance and microscopy.

关键词： MICROLENS MICROOPTICS IMAGING sensor arrays ccdS INTEGRATED OPTICS INTEGRATED IMAGE sensorS MINI cameras

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An amplified MOS imager suited for image processing

An amplified MOS imager suited for image processing

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IEEE International conference on solid-state Circuits (ISSCC)

作者： M. Sugawara H. Kawashima F. Andoh N. Murata Y. Fujita M. Yamawaki NHK Science and Technology Research Laboratories Tokyo Japan ULSI Laboratory Mitsubishi Electric Corporation Limited Itami Hyogo Japan

Recent progress in solid-state imaging sensor technology has increased the number of pixels. The increased sensor array size inevitably raises the data rate and leads to difficulties in image processing. Most of these difficulties come from the scanning operation in which spatially adjacent vertical pixels are arranged separately in a time axis. To solve the problem, this amplified MOS imager (AMI) outputs three neighboring lines simultaneously. This permits signals from spatially-adjacent vertical pixels to be handled at the same time. Two advantages made it possible to realize this sensor. One is signal charge amplification to prevent SNR degradation, the other is a non-destructive read-out function. The sensor is fabricated with 0.8 /spl mu/m, double-polysilicon double-aluminum CMOS process technology.< >

关键词： Image processing Image sensors Pixel sensor arrays Blanking Circuits Delay cameras Laboratories Ambient intelligence

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INTEGRATED PHOTODIODE arrays - solid-state IMAGE sensorS 14

INTEGRATED PHOTODIODE ARRAYS - SOLID-STATE IMAGE SENSORS

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14TH SYMP ON PHOTONIC MEASUREMENTS

作者： TERANISHI, N TANIGAWA, H NEC Corp. (Japan)

ISBN: (纸本)0819408778

For the past quarter century, photodiode arrays, or solid-state image sensors, have made tremendous progress, as well as memories and micro computers, owing to advances in the silicon technology. They have taken the place of TV image pick-up tubes, because they have advantages of small size, low power consumption, high fidelity, low noise, and high sensitivity. At present, solid-state image sensors, especially charge coupled devices (ccd), are widely used, both in home-use video cameras and broadcast-use video cameras. There are a lot of important inventions and improvements to realize practical solid-state image sensors ; Large scale photodiode arrays need an on-chip scanner, because not as many output terminals can be prepared as the number of photodiodes. The first self-scanned photodiode array was " Scanistor", reported by Horton in 1 964 . In 1970, Boyle and Smith invented a remarkable low noise scanner, called the charge coupled device (ccd) 2, The integration mode in photodiodes for obtaining high sensitivity was proposed by Weckler in 1967g. Around 1973, the basic structure for the present ccd image sensor was made up. After that, the characteristics were improved, as the pixel number was increased. Blooming, which is an overflow of excess charge due to large incident light, is suppressed by the vertical overflow drain (VOD) structure4. Image lag suppression and dark current reduction are achieved by the pinned photodiode5. Progress made in solid-state image sensors is still remarkable, as well as that in memories and microprocessors. Image sensors supply various kinds of information, taken from images. Images, or scenes, themselves have an intensity profile as a function of space coordinates, x, y, z, time t, and light wavelength . "Light" usually means visible light, but includes all electromagnetic waves, such as infrared, millimeterwave, ultraviolet, and X-ray. Since all physical variables, such as supersonic, magnetic field and so on, have a profile, th

关键词： Image sensors

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A single register 8 K ccd trilinear color sensor with unrestricted exposure settings 40

A single register 8 K CCD trilinear color sensor with unrest...

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40th IEEE International solid-state Circuits conference, ISSCC 1993

作者： Anagnostopoulos, C.N. Erhardt, H.J. Philbrick, R.H. Andrus, J.M. Kecskemety, B.J. Eastman Kodak Co. RochesterNY United States

ISBN: (纸本)0780309871

A color linear ccd (charge coupled device) sensor, that consists of three arrays, each containing 8002 active pixels, is described. Each array is overlaid with an integral red, green, or blue color filter. The device consists of three identical arrays placed on 72-mu m centers. A schematic of a single array is shown. The device consists of 8042 photodiodes, 40 of which are used for calibration and test, and are designated as either 'dark' or 'test', and 8002 are active. The responsivity of each of the sensors as a function of wavelength is shown. Process and device characteristics are summarized. © 1993 IEEE.

关键词： Charge coupled devices

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MULTIPORT solid-state IMAGER CHARACTERIZATION AT VARIABLE PIXEL RATES

MULTIPORT SOLID-STATE IMAGER CHARACTERIZATION AT VARIABLE PI...

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conference on Ultrahigh-Speed and High-Speed Photography, Videography, and Photonics 1993

作者： YATES, GJ ALBRIGHT, KL TURKO, BT LOS ALAMOS NATL LAB LOS ALAMOSNM 87544

ISBN: (纸本)0819412511

The imaging performance of an 8-port Full Frame Transfer Charge Coupled Device (FFT ccd) as a function of several parameters including pixel clock rate is presented. The device, model ccd-13, manufactured by English Electric Valve (EEV), is a 512 X 512 pixel array designed with four individual programmable bidirectional serial registers and eight output amplifiers permitting simultaneous readout of eight segments (128 horizontal X 256 vertical pixels) of the array. The imager was evaluated in Los Alamos National Laboratory's High-Speed solid-state Imager Test Station at true pixel rates as high as 50 MHz for effective imager pixel rates approaching 400 MHz from multiporting. Key response characteristics measured include absolute responsivity, Charge-Transfer-Efficiency (CTE), dynamic range, resolution, signal-to-noise ratio, and electronic and optical crosstalk among the eight video channels. Preliminary test results and data obtained from the ccd-13 are presented and the versatility/capabilities of the test station are reviewed.

关键词： ccd cameras Clocks Optical amplifiers Imaging systems Image segmentation Video Staring arrays solid state electronics Charge-coupled devices Xenon

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A single register 8 K ccd trilinear color sensor with unrestricted exposure settings

A single register 8 K CCD trilinear color sensor with unrest...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： C.N. Anagnostopoulos H.J. Erhardt R.H. Philbrick J.M. Andrus B.J. Kecskemety Eastman Kodak (Japan) Limited Rochester NY USA

A color linear ccd (charge coupled device) sensor, that consists of three arrays, each containing 8002 active pixels, is described. Each array is overlaid with an integral red, green, or blue color filter. The device consists of three identical arrays placed on 72- mu m centers. A schematic of a single array is shown. The device consists of 8042 photodiodes, 40 of which are used for calibration and test, and are designated as either 'dark' or 'test', and 8002 are active. The responsivity of each of the sensors as a function of wavelength is shown. Process and device characteristics are summarized.< >

关键词： Charge coupled devices Diodes Photodiodes sensor arrays Clocks Implants Testing Charge-coupled image sensors Pixel Filters

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HIGH-RESOLUTION, NEAR REAL-TIME X-RAY VIDEO IMAGING WITHOUT IMAGE INTENSIFICATION 2

HIGH-RESOLUTION, NEAR REAL-TIME X-RAY VIDEO IMAGING WITHOUT ...

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conference on X-Ray Detector Physics and Applications II

作者： MENGERS, P PAULTEK IMAGING GRASS VALLEYCA

ISBN: (纸本)0819412589

This paper discusses a type of x-ray camera designed to generate standard RS-170 video output that does not use x-ray or optical image intensifiers. Instead, it employs a very sensitive, very high resolution ccd sensor which views an x-ray-to-light conversion screen directly through a high speed imaging lens. This new solid state TV camera, which is described later, has very low readout noise plus unusually high gain which enables it to generate real-time video with incident flux levels typical of many inspection applications. Perhaps more important is an ability to integrate for multiple frame intervals on the chip followed by the output of a standard, RS-170 format video frame containing two balanced interlaced fields. In this integrating mode excellent quality images of low contrast objects can be obtained with only a few tenths of a second integration intervals. The basic elements of this type of camera are described and applications discussed where this approach appears to have important advantages over other methods in common use.

关键词： cameras X-rays X-ray imaging Video Imaging systems sensors Image intensifiers Image resolution X-ray detectors Inspection

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ccd FOCAL-PLANE IMAGE REORGANIZATION PROCESSORS FOR LOSSLESS IMAGE COMPRESSION

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IEEE JOURNAL OF solid-state CIRCUITS 1992年第3期27卷 398-405页

作者： KEMENY, SE TORBEY, HH MEADOWS, HE BREDTHAUER, RA LASHELL, MA FOSSUM, ER COLUMBIA UNIV DEPT ELECT ENGNNEW YORKNY 10027 COLUMBIA UNIV DEPT ELECT ENGNNEW YORKNY 10027 LORAL FAIRCHILD IMAGING SENSORS NEWPORT BEACHCA 92658

Four image reorganization IC's to enable real-time difference encoding for hierarchical lossless image compression are reported. Two image reorganization processors are realized on the focal plane and two were designed for hybridization to a separate imager IC. The two focal-plane IC's represent the first integration of a 256 X 256 buried-channel frame-transfer ccd image sensor with additional charge-domain circuitry to enable image reformatting at video rates (28 frames/s). The reformatting circuitry occupies 2% of the IC area with an estimated power dissipation of less than 150-mu-W at a 30-Hz frame rate. The four IC's generate pyramidal pixel output in 3 x 3 blocks with the center pixel first. Pixel data reorganization is performed through simultaneous readout of three rows of data, followed by pixel resequencing and sampling to provide differential output. A novel architecture, consisting of three parallel-serial-parallel registers (Sp3) provides simultaneous readout of multiple imager rows on the focal-plane IC's. The IC's have achieved a charge-transfer efficiency (CTE) of 0.99996 in the conventional horizontal and vertical ccd registers, and a CTE of 0.99994 in the SP3 registers. The overall output amplifier sensitivity is 3.2-mu-V/electron.

关键词： Charge coupled devices Image coding sensor arrays Image sensors Pixel Image processing Image storage Hybrid integrated circuits Charge-coupled image sensors Power dissipation

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A 2/3-inch 2M pixel FIT-ccd HDTV image sensor 39

A 2/3-inch 2M pixel FIT-CCD HDTV image sensor

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39th IEEE International solid-state Circuits conference, ISSCC 1992

作者： Harada, Kouichi Negishi, Michio Ohgishi, Takeshi Kubota, Shinzi Oda, Tatsuzi Yamagishi, Michio Atsugi Technology Center Sony Corp. Atsugi Japan

ISBN: (纸本)0780305736

A 2/3-in optical format ccd (charge-coupled device) image sensor for HDTV (high-definition television) cameras is described. The image area is 9.6 (H)×5.4 (V)mm2, the effective number of pixels is 1920 (H)×1036 (V), and the unit cell size is 5.0 (H)×5.2 (V)μm2. Dual-channel horizontal registers (H-ccds) are adopted. The barrier potential area is formed under the signal partitioning transfer gate between the dual H-ccds. The smear drain for sweeping smear charges away is arranged alongside the second H-ccd. The n+ regions in the smear drain are separated. The frame shift frequency should be raised as high as possible to reduce the smear level. On the other hand, the frame shift frequency is limited by the drive capability. In this context, the frequency is set to 1.5 MHz. © 1992 IEEE.

关键词： Charge coupled devices

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