The development of a ccd linear image sensor, which provides integration clearing, exposure control, anti-blooming and linearity, will be discussed. Dynamic range is 6×10^{4} , suitable for auto-focus facsimile a...
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The development of a ccd linear image sensor, which provides integration clearing, exposure control, anti-blooming and linearity, will be discussed. Dynamic range is 6×10^{4} , suitable for auto-focus facsimile and OCR systems.
A single chip color camera of phase separation type employing a 512 V/spl times/486 H element frame transfer ccd with a high color fidelity has been fabricated. The horizontal color crosstalk is successfully suppresse...
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A single chip color camera of phase separation type employing a 512 V/spl times/486 H element frame transfer ccd with a high color fidelity has been fabricated. The horizontal color crosstalk is successfully suppressed by using a color stripe filter array in which optically opaque stripes are vertically aligned on the channel stop regions of the ccd.
A ccd image sensor with the full 625-line TV capability has been developed. The characteristics of the device are discussed, and the need for further improvement is pointed out.
A ccd image sensor with the full 625-line TV capability has been developed. The characteristics of the device are discussed, and the need for further improvement is pointed out.
A 1030 X 128 element time delay and integration (TDI) ccd image sensor has been developed for low-light-level (L/sup 3/) imaging applications. For L/sup 3/ imaging, output is derived from a high-gain low-noise floatin...
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A 1030 X 128 element time delay and integration (TDI) ccd image sensor has been developed for low-light-level (L/sup 3/) imaging applications. For L/sup 3/ imaging, output is derived from a high-gain low-noise floating-gate amplifier (FGA). For larger input signal levels, a second, resettable floating-gate amplifier (RFGA) with lower gain and wider dynamic range provides output in parallel to the FGA. The device features four-phase buried-channel construction and a polysilicon gate design tailored to produce optimum broad-band responsivity. Input signal levels of 500 electrons have been successfully imaged and amplifier noise levels of approximately 20 electrons have been observed.
A ccd image sensor with the full 625-line TV capability has been developed. The characteristics of the device are discussed, and the need for further improvement is pointed out.
A ccd image sensor with the full 625-line TV capability has been developed. The characteristics of the device are discussed, and the need for further improvement is pointed out.
A 384(H) × 490(V) element interline ccd image sensor, using PN+ junction photodiodes without overlayer electrodes, a low-noise charge detector and ccd registers with large charge-handling capability, will be disc...
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A 384(H) × 490(V) element interline ccd image sensor, using PN+ junction photodiodes without overlayer electrodes, a low-noise charge detector and ccd registers with large charge-handling capability, will be discussed. SNR is 71dB at device saturation light level of 1.51ux.
Currently, there is a growing interest in the development of low-cost solid-state color TV cameras. Design approaches and tradeoffs for the key element - solid-state image sensors-will be assessed. Topics will include...
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Currently, there is a growing interest in the development of low-cost solid-state color TV cameras. Design approaches and tradeoffs for the key element - solid-state image sensors-will be assessed. Topics will include performance, advances in the IC processing technology leading to the fabrication of the sensors with a satisfactory cosmetic quality and at reasonable cost, and the advantages of different types of color-filter techniques.
Because of its low-noise capability, high dynamic range and low power consumption, the ccd appears to be a potentially very useful tool for signal processing of linear and two-dimensional focal-plane arrays of infrare...
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Because of its low-noise capability, high dynamic range and low power consumption, the ccd appears to be a potentially very useful tool for signal processing of linear and two-dimensional focal-plane arrays of infrared detectors. The signal processing operations include time delay and integration (TDI), multiplexing and filtering. We discuss in this paper the critical parameters of the detector-to-ccd coupling and the related limitations for the various kinds of thermal imaging scanners. Some of these parameters have been measured at 300 K and 77 K, especially the ccd's input transconductance, the input MOSFET coupling noise, the transfer noise in the ccd channel, and the threshold voltage dispersion. We also give some experimental results on the direct-injection coupling of a Pb 0,80 Sn 0,20 Te photovoltaíc detector array at 77 K to a silicon ccd multiplexer specially designed for the readout of infrared detectors. At present the 2.10 10 W -1 cmHz 1/2 measured equivalent detectivity is limited by the coupling noise in the channel of each input MOSFET. A 5.10 10 W -1 cmHz 1/2 equivalent detectivity is expected with 8 - 12 μm detectors operated at 60 K.
The circuitry of a sensor and related components used in a TV miniature compatible ccd camera is discussed. The development of the camera included the design and fabrication of a 490 x 327 (160, 230 pixels) 2-phase, l...
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The circuitry of a sensor and related components used in a TV miniature compatible ccd camera is discussed. The development of the camera included the design and fabrication of a 490 x 327 (160, 230 pixels) 2-phase, large-area ccd array operating in a frame-store mode. As Figure 1 illustrates, the sensor contains not only an imager array, but also a 245 x 327 memory array, a serial readout and an on-chip amplifier stage. The sensor has a CTE greater than 0.9999 at a 5MHz data rate. Good dcvices have dark current less than 10 nA/cm2 with a best ever value of 2nA/cm2. Pictures of the sensor imaging and its dark current pattern arc shown. The integration time was 70 ms with a data rate of 6.2 MHz.
The fabrication and performance of ccd imaging arrays with transparent gate tin-oxide electrodes will be presented. Imagers described will include 1 × 256 linear, 100 × 100 area and 29 × 9 TDI sensors.
The fabrication and performance of ccd imaging arrays with transparent gate tin-oxide electrodes will be presented. Imagers described will include 1 × 256 linear, 100 × 100 area and 29 × 9 TDI sensors.
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