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检索条件"任意字段=Conference on Solid State Sensor Arrays and CCD Cameras"

共 195 条记录，以下是31-40 订阅

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A 3Mpixel multi-aperture image sensor with 0.7μm pixels in 0.11μm CMOS

A 3Mpixel multi-aperture image sensor with 0.7μm pixels in ...

引用

2008 IEEE International solid state Circuits conference, ISSCC

作者： Fife, Keith El Gamal, Abbas Wong, H.-S. Philip Stanford University Stanford CA United States

ISBN: (纸本)9781424420100

A multi-aperture imager sensor is designed to reduce lens requirements, produce 3D maps and improve pixel-defect tolerance. It comprises a 166×76 array of 16×16 0.7μm full-frame transfer ccd sub-arrays, a CMOS readout circuit and per-column 10b ADCs fabricated in a 0.11 μm CMOS process. Snap-shot image acquisition with CDS is performed at up to 15fps. The array has 0.15V/lx·s sensitivity, 3500e- full-well capacity, 5e - read noise, 25e-/s dark signal, 57dB DR and 35dB peak SNR. ©2008 IEEE.

关键词： Pixels

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CMOS Image sensors and Camera-on-a-Chip for Low-Light Level Biomedical Applications

CMOS Image Sensors and Camera-on-a-Chip for Low-Light Level ...

引用

IEEE International conference of Electron Devices and solid-state Circuits

作者： Deen, M. Jamal El-Desouki, Munir M. Faramarzpour, Naser McMaster Univ Dept Elect & Comp Engn Hamilton ON L8S 4K1 Canada

ISBN: (纸本)9781424425396

With the advances in deep submicron CMOS technologies, CMOS-based active-pixel sensors (APS) have become a practical alternative to charge-coupled devices (ccd) imaging technology. Key advantages of CMOS image sensors are that they are fabricated in standard CMOS technologies, which allow full integration of the image sensor along with the analog and digital processing and control circuits on the same chip and that they are of low cost. Since there is a practical limit on the minimum pixel size (4 similar to 5 mu m), then CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel. Such smart pixels truly show the potential of CMOS technology in imaging applications, especially for high-speed applications. This work discusses various active-pixel sensors (APS) and shows the feasibility of using the DC-level to increase the sensitivity of the pixel for low-level light applications. Avalanche-photodiodes (APDs) are described, in addition to a discussion of the breakdown mechanism and microplasma in avalanche breakdown for single photon APDs. A fully integrated, 16x16 pixel CMOS camera-on-a-chip, fabricated in a standard CMOS 0.18 mu m technology is also shown in this work. The array is based on 256 APS with a pixel size of 20 Am x 30 mu m, a fill-factor of 60% with all digital and analog blocks implemented on-chip.

关键词： CMOS technology CMOS image sensors pixel sensors (image) low light cameras avalanche breakdown appearance potential spectroscopy

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A White-RGB CFA-Patterned CMOS Image sensor with Wide Dynamic Range

A White-RGB CFA-Patterned CMOS Image Sensor with Wide Dynami...

引用

IEEE International conference on solid-state Circuits (ISSCC)

作者： Yoshitaka Egawa Nagataka Tanaka Nobuhiro Kawai Hiromichi Seki Akira Nakao Hiroto Honda Yoshinori Iida Makoto Monoi Toshiba Kanagawa Japan

ISBN: (纸本)9781424420100

CMOS image sensors is important for mobile phone cameras. But, when very small pixel sizes are used, the sensor SNR is limited by photon shot noise. In order to improve the sensor SNR Honda and Luo proposed the use of a sensor with a white (W) pixel in the color filter area. The white pixel, however, saturates at low light levels and sufficient dynamic range cannot be obtained as a result. In order to overcome the dynamic range problem, we propose a CIS with a WRGB color filter array (two white pixels per 2x2 block) incorporating the wide dynamic-range (WDR) technology.

关键词： CMOS image sensors Dynamic range Computational Intelligence Society Image sensors Color sensor arrays Filters cameras Colored noise CMOS technology

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A 16×16 CMOS Proton Camera Array for Direct Extracellular Imaging of Hydrogen-Ion Activity

A 16×16 CMOS Proton Camera Array for Direct Extracellular I...

引用

IEEE International conference on solid-state Circuits (ISSCC)

作者： Mark J. Milgrew Mathis O. Riehle David R. S. Cumming University of Glasgow Glasgow UK

Over the past twenty-five years, silicon CMOS technology has firmly established itself as the dominant platform in the microelectronics industry. This has resulted in many recent initiatives to fabricate CMOS-based microelectrodes for the stimulation and recording of electrical activity of neurons. CMOS technology offers the potential for monolithic integration of sensors and electronics and it serves as an appropriate platform to facilitate the integration of large arrays of sensors into a small geometry. The extracellular pH of a cell culture is a particularly important indicator of global cellular metabolism, but up until now, this property has typically been measured with invasive and expensive techniques such as miniaturized glass microelectrodes, fluorescent ratio imaging microscopy and magnetic resonance spectroscopy. CMOS provides a scalable, low cost, mass manufacturing platform, and offers the potential to develop sensor arrays that can perform non-invasive and long term imaging on cultured cells. In this paper, we present the first 16x16 proton camera array for direct imaging of the hydrogen-ion activity of cell cultures grown in vitro. The proton camera is based on a single-chip ion-sensitive field-effect transistor (ISFET) sensor array technology that can be implemented using a standard commercial CMOS process.

关键词： Protons CMOS image sensors cameras Extracellular sensor arrays CMOS technology Magnetic resonance imaging Microelectrodes Magnetic sensors Silicon

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CMOS Photodiode Design for Gamma Camera Application

CMOS Photodiode Design for Gamma Camera Application

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International IEEE conference on Signal-Image Technologies and Internet-Based System

作者： Nur Sultan Salahuddin Michel Paindavoine Gunadarma University Indonesia LE2I Laboratory UMR CNRS 5158 University of Burgundy France

We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The photodiode areas are respectively 1 mm × 1 mm and 0.4 mm × 0.4 mm with fill factor 98% and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new gamma camera solid-state concept.

关键词： Photodiodes CMOS image sensors cameras Circuit testing Gamma ray detectors Voltage Signal design CMOS process Optical arrays sensor arrays

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A 3MPixel Multi-Aperture Image sensor with 0.7μm Pixels in 0.11μm CMOS

A 3MPixel Multi-Aperture Image Sensor with 0.7μm Pixels in ...

引用

IEEE International conference on solid-state Circuits (ISSCC)

作者： Keith Fife Abbas El Gamal H.-S. Philip Wong University of Stanford Stanford CA USA

ISBN: (纸本)9781424420100

In this paper we describe the first complete MA-imager chip comprising a 166x76 array of 16x16, 0.7mum pixel FT-ccd apertures, per-column ADCs, control logic and chip readout circuits fabricated in 0.11mum CMOS technology. The aperture control buses are globally connected to the FT-ccds. The RS signal and the decoded ROW bus are used to address the readout circuits for each row of FT-ccds. The MUX blocks contain column bias circuitry, inputs for external testing of the ADC and support for analog pixel readout through AOUT. The ADCs share an output bus that is decoded by COL and buffered for digital readout.

关键词： Image sensors Pixel CMOS image sensors Voltage Electrodes Buffer storage CMOS technology sensor arrays Charge transfer Apertures

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sensors for the high resolution astronomical imaging

Sensors for the high resolution astronomical imaging

引用

National Workshop on Advanced Optoelectronic Materials and Devices, AOMD

作者： S.K. Saha Indian Institute of Astrophysics Bangalore India

Optical interferometry with single aperture, as well as with multi-aperture require high quality sensor that enables to obtain snap shots with a very fast time resolution of the order of (i) frame integration of 50~Hz, or (ii) photon recording rates of a few MHz. Although advancement of real time compensation of atmospheric turbulence using adaptive optics (AO) system has made inroad in obtaining diffraction-limited astronomical imaging (mostly in infra-red wavelength), it needs high time resolution cameras. The performance relies on the characteristics of such sensors, e.g., (i) the spectral bandwidth, (ii) the quantum efficiency, (iii) the detector noise that includes dark current, read-out and amplifier noise, (iv) the time lag due to the read-out of the detector, and (v) the array size and the spatial resolution. Until recently, micro channel plate based intensifier is added before a ccd to gather the speckles or fringes of faint objects. Recent development of the solid state based non-intensified low light level ccd (L3ccd), which effectively reduces readout noise to less than one electron RMS has enabled substantial internal gain within the ccd before the signal reaches the output amplifier. After a brief presentation on the interferometry and adaptive optics system, the current trend and future progress in developing new generation optical/IR sensors will be discussed.

关键词： Image sensors Image resolution High-resolution imaging Optical noise Optical interferometry Optical sensors Adaptive optics sensor arrays Charge coupled devices Optical imaging

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Inkjet printhead arrays with no separating wall between bubbles

Inkjet printhead arrays with no separating wall between bubb...

引用

4th International conference on solid-state sensors, Actuators and Microsystems, TRANSDUCERS and EUROsensorS '07

作者： Chang, C.M. Yang, L.D. Yu, R.J. Lin, Y.L. Tseng, F.G. Chieng, C.C. Institute of Microelectromechanical System National Tsing Hua University Hsinchu Taiwan Department of Engineering and System Science National Tsing Hua University Hsinchu Taiwan

ISBN: (纸本)1424408423

Present work proposes an innovative design of microbubble generator with no separating wall between bubbles, i.e. no manifold and no chamber, so that faster refilling rate and higher resolution can be achieved. This design concept is illustrated by operating three micro heaters in parallel with different delay times of the central heater. The bubble images and induced flowfield in growth/collapsed processes are recorded by ccd camera and measured by Micro Particle Image Velocimetry (PIV). In addition, the measured flowfields are compared with numerical simulations based on conservation equations of mass and momentum. This study proposes the use of delay time between adjacent bubbles to mimic the chamber barrier and build pressure of different strength correlating to delay time.. ©2007 IEEE.

关键词： ccd cameras

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CMOS image sensors: state-of-the-art and future perspectives

CMOS image sensors: State-of-the-art and future perspectives

引用

European conference on solid-state Circuits (ESSCIRC)

作者： Albert Theuwissen Delft University of Technnology Delft Netherlands

Over the last decade, CMOS image sensor technology made huge progress. Not only the performance of the imagers was drastically improved, but also their commercial success boomed after the introduction of mobile phones with an onboard camera. Many scientists and marketing specialists predicted 15 years ago that CMOS image sensors were going to completely take over from ccd imagers, in the same way as ccd imagers did mid eighties when they took over the imaging business from tubes [1]. Although CMOS has a strong position in imaging today, it did not rule out the business of ccds. On the other hand, the CMOS-push drastically increased the overall imaging market due to the fact that CMOS image sensors created new application areas and they boosted the performance of ccd imagers as well. This paper describes the state-of-the-art of CMOS image sensors as well as the future perspectives.

关键词： CMOS image sensors CMOS technology Pixel Optical imaging cameras CMOS process Charge coupled devices Business Image sensors Optical noise

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A MOS Image sensor with Microlenses Built by Sub-Wavelength Patterning

A MOS Image Sensor with Microlenses Built by Sub-Wavelength ...

引用

IEEE International conference on solid-state Circuits (ISSCC)

作者： Kimiaki Toshikiyo Takanori Yogo Motonori Ishii Kazuhiko Yamanaka Toshinobu Matsuno Kazutoshi Onozawa Takumi Yamaguchi Matsushita Elecrric Indusrrial Company Limited Kyoto Japan

A MOS image sensor has digital-microlenses implemented by sub-wavelength patterning of concentric SiO 2 ring walls. The sensitivity at the periphery of the imager is 3000e - /1x-s. In comparison, the sensitivity at the periphery of a conventional imager is 1300e/1x-s. Thus, extremely uniform brightness throughout the reproduced image is demonstrated even with an angle of incidence > 45deg.

关键词： Image sensors Lenses Microoptics Refractive index Optical refraction Signal design Pixel Digital cameras Optical arrays Optical sensors

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