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CMOS image sensors comprised, of floating diffusion driving pixels with buried photodiode

IEEE JOURNAL OF solid-state CIRCUITS 2004年第12期39卷 2408-2416页

作者： Mabuchi, K Nakamura, N Funatsu, E Abe, T Umeda, T Hoshino, T Suzuki, R Sumi, H SONY Corp Microsyst Network Co Kanagawa 2430014 Japan

New CMOS image sensors that can realize high quality dark scene images with pixels smaller than conventional pixel types are described. The new technologies used to develop them are floating diffusion (FD) driving pixel with a buried photodiode with three or less transistors, and low-voltage driving technologies with a new photodiode structure and FD-boost method. Through the use of the 0.25-mum technology, prototype chips consisting of 3.45-mum size pixels were manufactured. Prototype chips consisting of 3.1-mum size pixels which share FD between two neighboring pixels (2-pixel-sharing) were also manufactured. The complete transfer operation, that is to say, zero lag and zero pixel kTC noise was achieved at a supply voltage of 2.5 V with manufacturing stability. Realized saturation voltages were 510 and 360 mV for 3.45-mum and 3.1-mum size pixel chips, respectively. In addition, a combined double-correlated double sampling (CDS) architecture which can flexibly process two sets of signals in combination was employed. Due to its small pixel size, high image quality, and output flexibility, this framework has potential for replacing charge-coupled device (ccd) image sensors with CMOS image sensors in volume markets of digital still cameras and camcorders.

关键词： buried photodiode CMOS image sensor floating diffusion driving hole accumulation diode pixel boost method

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CMOS image sensors comprised, of floating diffusion driving pixels with buried photodiode

CMOS image sensors comprised, of floating diffusion driving ...

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IEEE International solid-state Circuits conference

作者： Mabuchi, K Nakamura, N Funatsu, E Abe, T Umeda, T Hoshino, T Suzuki, R Sumi, H SONY Corp Microsyst Network Co Kanagawa 2430014 Japan

关键词： buried photodiode CMOS image sensor floating diffusion driving hole accumulation diode pixel boost method

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Characteristics of integrated QWIP-HBT-LED up-converter

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2003年第12期50卷 2378-2387页

作者： Oktyabrsky, S Khmyrova, I Ryzhii, V SUNY Albany Sch Nanosci & Nanoengn Albany NY 12203 USA Univ Aizu Comp Solid State Phys Lab Aizu Wakamatsu Wakamatsu 9658580 Japan

In this paper, we evaluate characteristics of a novel device based on the integration of a quantum well IR photodetector (QWIP), a heterostructure bipolar transistor (HBT), and a light-emitting diode (LED) for up-conversion of middle infrared (IR) into near IR (visible) radiation. Its operation is associated with intersubband absorption of middle IR radiation in the QWIP, amplification of the QWIP output electric signal in the HBT, and emission of near IR or visible radiation from the LED fed by the current injected from the HBT. This device allows us to use Si sensors for IR and thermal imaging and significantly surpass the one based on integration of a QWIP and a LED. If the HBT current gain is high enough, the total noise of the IR camera with the up-converter can be comparable to that of the QWIP electrically connected to a read-out circuit. The major sources of the excess noise are shot noise and 1/f noise of the HBT and shot noise of the charge coupled device (ccd) sensor. The criteria to reduce their influence are established. The QWIP-HBT-LED up-converter becomes most advantageous for megapixel focal plane arrays and high read-out rate cameras.

关键词： focal plane array heterostructure bipolar transistor (HBT) imaging sensor light-emitting diode (LED) noise quantum conversion efficiency quantum well infrared photodetector (QWIP)

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Ultra-high resolution image capturing and processing for digital cinematography

Ultra-high resolution image capturing and processing for dig...

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IEEE International conference on solid-state Circuits (ISSCC)

作者： A. Theuwissen J. Coghill L. Ion F. Shu H. Siefken C. Smith Delft University of Technnology Delft Netherlands DALSA Waterloo Canada

The influence of digital cinematography on silicon ICs is described with primary emphasis on the image capturing function. The ccd imager combines 8 Mpixels resolution, up to 60 frames/s and a linear dynamic range of ... 详细信息

ISBN: (纸本)0780377079

关键词： Image resolution Cinematography Motion pictures cameras Charge coupled devices CMOS technology Image storage Optical films Dynamic range sensor phenomena and characterization

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Integrated chemical sensor array platform based on a light emitting diode, xerogel-derived sensor elements, and high-speed pin printing

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ANALYTICA CHIMICA ACTA 2002年第1期470卷 101-110页

作者： Cho, EJ Bright, FV SUNY Buffalo Dept Chem Buffalo NY 14260 USA

We report a new, solid-state, integrated optical array sensor platform. By using pin printing technology in concert with sol-gel-processing methods, we form discrete xerogel-based microsensor elements that are on the order of 100 mum in diameter and 1 mum thick directly on the face of a light emitting diode (LED). The LED serves as the light source to excite chemically responsive luminophores sequestered within the doped xerogel microsensors and the analyte-dependent emission from within the doped xerogel is detected with a charge coupled device (ccd). We overcome the problem of background illumination from the LED reaching the ccd and the associated biasing that results by coating the LED first with a thin layer of blue paint. The thin paint layer serves as an optical filter, knocking out the LEDs red-edge spectral tail. The problem of the spatially-dependent fluence across the LED face is solved entirely by performing ratiometric measurements. We illustrate the performance of the new sensor scheme by forming an array of 100 discrete O-2-responsive sensing elements on the face of a single LED. The combination of pin printing with an integrated sensor and light source platform results in a rapid method of forming (similar to1 s per sensor element) reusable sensor arrays. The entire sensor array can be calibrated using just one sensor element. Array-to-array reproducibly is <8%. arrays can be formed using single or multiple pins with indistinguishable analytical performance. (C) 2002 Elsevier Science B.V. All rights reserved.

关键词： solid-state sensor array platform light emitting diode pin printing

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Mapping the entire universe: a goal for gigapixel arrays, 3D spectro-imagers, and large telescopes

Mapping the entire universe: a goal for gigapixel arrays, 3D...

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conference on Future Research Direction and Visions for Astronomy

作者： Bally, J Kilston, S Univ Colorado Ctr Astrophys & Space Astron Boulder CO 80309 USA

ISBN: (纸本)0819446149

Visual-wavelength focal plane mosaics with 10 to 100 gigapixels may become available within the next several decades. Silicon sensor read-outs may also enable the reliable detection of individual visual wavelength photons in the near future. Such solid-state photon-counting mosaics, fed by integral-field spectrographs (IFSs) which simultaneously record the spectrum of every image element, may enable astronomers to chart the 3D structure of the entire visible Universe, and trace its physical and chemical evolution from soon after the birth of the first stars to the present. We explore the requirements of a 'cosmic atlas' sensitive to objects having 0.1 times the luminosity of the Milky Way. The proposed cosmic survey has a spatial resolution of about 0.1", a spectral resolution of R approximate to 10(2) to 10(3), and cover the wavelength range from the near-UV to the near-IR.

关键词： all-sky surveys ccd detectors integral-field spectroscopy

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A 35 mm film format CMOS image sensor for camera-back applications

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IEEE International conference on solid-state Circuits (ISSCC)

作者： J. Hurwitz M.J. Panaghiston K.M. Findlater R.K. Henderson T.E.R. Bailey A.J. Holmes B. Paisley Imaging Division STMicroelectronics Edinburgh UK

ISBN: (纸本)0780373359

A 5 V 1120×1808 pixel 35 mm film format CMOS image sensor for camera-back use, fabricated in 0.5 μm 2-poly 3-metal (2P3M) technology, includes integrated light-detection circuitry using non-destructive pixel read and consumes <50 μW. Reticle stitching is employed for the large format. Dynamic range is 66 dB and peak SNR is 55 dB.

关键词： CMOS image sensors sensor arrays Optical arrays Image sensors Capacitance Image edge detection cameras solid state circuits Pixel Energy consumption

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Flat FEA image sensor with HARP target

Flat FEA image sensor with HARP target

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International conference on Vacuum Electronics

作者： Y. Takiguchi K. Osada K. Miyakawa M. Nanba S. Okazaki T. Yamagishi N. Egami K. Tanioka M. Tanaka S. Itoh NHK Science & Technical Research Laboratories Tokyo Japan Product & Development Center Futaba Corporation Chiba Japan

ISBN: (纸本)0780372565

In a new application of field emitter arrays (FEAs), a unique, ultrahigh-sensitivity, flat image sensor that consists of an FEA and an avalanche-mode photoconductive target is proposed. We have been working to develop highly sensitive camera tubes with a high-gain avalanche rushing amorphous photoconductor (HARP) target. Although our latest HARP tube is about 100 times as sensitive as a conventional solid-state image sensor, it suffers from drawbacks related to its length (about 100 mm) and power consumption. To overcome these problems and develop a next-generation, ultra-high sensitivity, flat image sensor, we have developed an FEA image sensor.

关键词： Image sensors Prototypes Voltage sensor arrays Fluctuations Photoconductivity cameras Electrodes Electron emission Laboratories

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A simple approach of ccd camera calibration for optical diagnostics instrumentation

A simple approach of CCD camera calibration for optical diag...

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conference on Optical Diagnostics for Fluids, solids, and Combustion

作者： Cha, SS Leslie, FW Ramachandran, N Univ Illinois Chicago IL 60607 USA

ISBN: (纸本)0819441627

solid state array sensors are ubiquitous nowadays for obtaining gross field images in numerous scientific and engineering applications including optical diagnostics and instrumentation. Linear responses of these sensors are often required as in interferometry, light scattering and attenuation measurements, and photometry. In most applications, the linearity is usually taken to be granted without thorough quantitative assessment or correction through calibration. Upper-grade ccd cameras of high price may offer better linearity: however, they also require linearity checking and correction if necessary. Intermediate- or low-grade ccd cameras are likely to need calibration for achieving linearity. Here, we present two very simple approaches: one for quickly checking camera linearity without any additional setup and the other for precisely correcting nonlinear sensor responses. It is believed that after calibration, those sensors of intermediate or low grade can function as effectively as their expensive counterparts.

关键词： calibration error analysis data processing

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A low-power parallel processor IC for digital video cameras

A low-power parallel processor IC for digital video cameras

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27th European solid-state Circuits conference, ESSCIRC 2001

作者： Abbo, A.A. Kleihorst, R.P. Sevat, L. Wielage, P. Van Veen, R. Op De Beeck, M.J.R. Van Der Avoird, A. Philips Research Laboratories Prof. Holstlaan 4 NL-5656 AA Eindhoven Netherlands

We present a digital signal processor to be combined with a 30 frames per second VGA-format CMOS or ccd image sensor or any other source of digital video data. The processor is fully programmable and therefore able to run a variety of algorithms ranging from image communication to machine vision. The IC comprises a parallel processor array and a special purpose controller to achieve high computational performances (up to 5 GOPS) with a very modest power consumption. This can go down to 30 mWatts for simple applications such as a digital camera for video conferencing. The chip has been realized in a 0.18 μm CMOS process and takes up an area of 22 mm2. © 2001 IEEE.

关键词： CMOS integrated circuits

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