检索结果-内蒙古大学图书馆

European conference on solid-state Circuits (ESSCIRC)

作者： A.A. Abbo R.P. Kleihorst L. Sevat P. Wielage R. van Veen M.J.R. Op de Beeck A. van der Avoird Philips Research Laboratories Eindhoven Netherlands

We present a digital signal processor to be combined with a 30 frames per second VGA-format CMOS or ccd image sensor or any other source of digital video data. The processor is fully programmable and therefore able to run a variety of algorithms ranging from image communication to machine vision. The IC comprises a parallel processor array and a special purpose controller to achieve high computational performances (up to 5 GOPS) with a very modest power consumption. This can go down to 30 mWatts for simple applications such as a digital camera for video conferencing. The chip has been realized in a 0.18 µm CMOS process and takes up an area of 22 mm 2 .

关键词： Digital integrated circuits Digital cameras CMOS process Digital signal processors CMOS image sensors Charge-coupled image sensors Signal processing algorithms Image communication Machine vision Communication system control

来源：评论

学校读者我要写书评

暂无评论

A progressive scan ccd image sensor for DSC applications

引用

IEEE JOURNAL OF solid-state CIRCUITS 2000年第12期35卷 2044-2054页

作者： Yamada, T Ikeda, K Kim, YG Wakoh, H Toma, T Sakamoto, T Ogawa, K Okamoto, E Masukane, K Oda, K Inuiya, M Fuji Photo Film Co Ltd Kanagawa Japan

A progressive-scan ccd image sensor with a standard double-layer poly-silicon is designed on a new architecture of pixel interleaved array named PIAccd, The pixel layout is estimated to enlarge the saturation voltage by 1.3 times and heighten the sensitivity with the 1.4 times enlarged equilateral aperture opened above each photodiode, The three-dimensional simulation ensures that the unique electrode pattern layout has an advantage to accelerate the signal charge transfer. The pixel interleaved array heightens the resolution by 2(1/2) times in comparison with that of the same pixel number ITccd in horizontal and vertical directions. The resolution characteristics fit to the fine pattern sensitivity of the human eye and the power spectrum distributions of nature scenes. The fabricated sensor, which has 2.4M pixels with 4.52 mum(2) pixel size, has provided the 1.3 times sensitivity and the dynamic range of 71 dB, The reproduced image has verified the resolution of PIAccd 1.4 times higher than that of the same pixel number ITccd.

关键词： Charge-coupled image sensors Pixel sensor arrays Signal resolution Voltage Apertures Photodiodes Electrodes Acceleration Charge transfer

来源：评论

学校读者我要写书评

暂无评论

A 1/3-inch 1.3Mpixel single-layer electrode ccd with a high-frame-rate skip mode

A 1/3-inch 1.3Mpixel single-layer electrode CCD with a high-...

引用

2000 IEEE International solid-state Circuits conference 47th Annual ISSCC

作者： Hatano, K. Furumiya, M. Murakami, I. Kawasaki, T. Ogawa, C. Nakashiba, Y. ULSI Device Development Laboratory NEC Corp. Sagamihara Kanagawa Japan

A 1/3-inch 1.3Mpixel interline-transfer charge-coupled-device (ccd) image sensor was described for digital camera applications. The vertical ccd (V-ccd) of the image sensor was provided with ten-phase metal wiring to enable various charge-transfer modes. The inter-electrode gaps were filled with a boro-phosphorous-silicate-glass film that flows easily when heated to obtain a planar surface and easy fabrication of the metallic light-shielding film and peripheral circuit wiring. The system features automatic focusing and setting of the aperture in color viewfinders for digital cameras.

关键词： Image sensors

来源：评论

学校读者我要写书评

暂无评论

A 1/3-inch 1.3M pixel single-layer electrode ccd with a high-frame-rate skip mode

A 1/3-inch 1.3M pixel single-layer electrode CCD with a high...

引用

IEEE International conference on solid-state Circuits (ISSCC)

作者： K. Hatano M. Fummiya I. Murakami T. Kawasaki C. Ogawa Y. Nakashiba Nihon Denki Kabushiki Kaisha Minato-ku Tokyo JP ULSI Device Development Laboratory NEC Corporation Limited Sagamihara Kanagawa Japan

A 1/3-inch 1.3M pixel interline-transfer charge-coupled-device (IT-ccd) image sensor is described for digital camera applications. A 0.25 /spl mu/m-gap single-layer poly-Si is used for the ccd electrodes. The vertical ccd (V-ccd) of the image sensor has ten-phase metal wiring to enable various charge-transfer modes. We have now developed and tested a high-frame-rate skip mode (75 frame/s) and an advanced 3:1 interlaced-scan mode. We developed a method of separately implanting boron ions for the V-ccd and horizontal ccd (H-ccd) in single-layer electrode ccds with small pixels, to maintain a high charge-transfer efficiency. Furthermore, reducing the pixel size degrades the light-gathering capability of the on-chip microlenses, reducing the sensitivity for a given camera-iris aperture (f number). A new thin-flattened-layer microlens improved the sensitivity of the device. At an f number of 1.4, for example, there was an 18% increase in sensitivity.

关键词： Electrodes Charge coupled devices Image sensors Lenses Microoptics Pixel Digital cameras Wiring Testing Boron

来源：评论

学校读者我要写书评

暂无评论

A CMOS image sensor with a simple FPN-reduction technology and a hole accumulated diode

A CMOS image sensor with a simple FPN-reduction technology a...

引用

IEEE International conference on solid-state Circuits (ISSCC)

作者： K. Yonemoto H. Sumi R. Suzuki T. Ueno Camera System Department CCD System Division Semiconductor Company CNC Sony Corporation Kanagawa Japan

CMOS image sensors are generally characterized by their low power consumption, single power supply and capability for on-chip system integration in contrast with ccd image sensors. Even though CMOS image sensors have these advantages, they are not yet widely used in image capture applications because of their insufficient image quality due to the difficulty in FPN cancellation. This FPN-reduction technology and a hole accumulated diode (HAD) for sensing elements is applied to the CMOS image sensor. The CMOS image sensor consists of a 640/spl times/480 pixel array in 1/3 inch image format, a current-to-voltage converter, a correlated double sampling circuit and a timing generator. This image sensor uses a 0.35 /spl mu/m CMOS logic process with specialized add-on steps for HAD. The power supply is 3.3 V and maximum frame rate is 30 frames/s.

关键词： CMOS image sensors CMOS technology Power supplies sensor arrays Energy consumption System-on-a-chip Charge-coupled image sensors Image quality Diodes Pixel

来源：评论

学校读者我要写书评

暂无评论

Conditioning analysis of missing data estimation for large sensor arrays

Conditioning analysis of missing data estimation for large s...

引用

conference on Computer Vision and Pattern Recognition (CVPR)

作者： H. Qi W.E. Snyder ECE Department Ferris Hall University of Tennessee Knoxville Knoxville TN USA CACC North Carolina State University Raleigh NC USA

Optimal missing data estimation algorithms including deblurring and denoising are designed to restore images captured from large ccd sensor arrays using a butting technique, where 1 to 2 columns of data are missed at the butting edge. We developed a consistency method with separable deblurring to estimate the missing data. This method converts an ill-posed restoration problem into a well-posed one by making few assumptions based on regularization theory. Under the condition that no noise is inserted, and the separable blur kernel is exactly known, the consistency method can deblur the original image and at the same time estimate the missing columns(s) exactly. However, this algorithm becomes unstable when large noise is inserted or inaccurate estimation of the blur kernel is made. Conditioning analysis is used to quantify the amount of ill condition of the blur kernel when the assumptions are relaxed to different levels, which provides a solid measurement on how stable the system will remain knowing the signal-to-noise ratio and the inaccuracy of the blur kernel estimation. Experimental results from different approaches are compared.

关键词： Data analysis Kernel sensor arrays Image restoration Noise reduction Algorithm design and analysis Charge coupled devices Charge-coupled image sensors Image converters Signal analysis

来源：评论

学校读者我要写书评

暂无评论

A 1/2-in, 1.3M-pixel progressive-scan ccd image sensor employing 0.25-μm gap single-layer poly-Si electrodes

引用

IEEE JOURNAL OF solid-state CIRCUITS 1999年第12期34卷 1835-1842页

作者： Furumiya, M Hatano, K Nakashiba, Y Murakami, I Yamada, T Nakano, T Kawakami, Y Kawasaki, T Hokari, Y NEC Corp Ltd USLI Device Dev Lab Kanagawa 2292298 Japan NEC Corp Ltd Silicon Syst Res Labs Kanagawa 2292298 Japan

A 1/2-in, 1.3M-pixel progressive-scan interline-transfer charge-coupled-device (IT-ccd) image sensor has been developed for row-power and high sensitivity digital cameras. The image sensor uses 0.25-mu m gap single-layer poly-Si for ccd transfer electrodes in order to reduce the power consumption and number of fabrication process steps. The image sensor achieved a low driving voltage (2.1 V) on a horizontal ccd (H-ccd) at a frequency of 24.5 MHz. An original pixel layout and a self-aligned photodiode structure make it possible to achieve a progressive-scan pixel with well-controlled photodiode readout characteristics. An output three-stage source follower amplifier with new multioxide transistors, whose gate insulator thickness is thinner than that of a ccd register, is able to attain 17% higher gain than that of the conventional amplifier. The sensor provides low-power (100 mW) and high-output sensitivity. The total number of steps for fabricating the sensor was reduced to 70% of that for conventional three-layer poly-Si electrodes.

关键词： charge-coupled device (ccd) image sensors photodiode single-layer ccd source follower amplifier

来源：评论

学校读者我要写书评

暂无评论

Robust digitization and digital non-uniformity correction in a single-chip CMOS camera

Robust digitization and digital non-uniformity correction in...

引用

European conference on solid-state Circuits (ESSCIRC)

作者： I. Koren U. Ramacher H. Geib S. Kirmser C. Heer J. Schlussler J. Dohndorf J. Werner Infineon Technologies Inc. USA Technische Universität Dresden Germany AMI Inc. USA

Analog circuitry, digitization and subsequent digital non-uniformity correction in a single-chip digital CMOS camera are described. The sensor array of 720 × 576 active pixels is followed by a simple circuit implementing correlated double sampling, sample-and-hold function and A/D conversion with minimum analog hardware. The non-uniformity introduced by parameter variations in the analog circuitry is digitally corrected, resulting in measured rest non-uniformity and noise of 0.4% rms of the saturation signal. This level of non-uniformity leads to image quality comparable to the ccd.

关键词： Robustness Digital cameras CMOS image sensors sensor arrays CMOS digital integrated circuits CMOS analog integrated circuits Image sampling Image converters Hardware Noise measurement

来源：评论

学校读者我要写书评

暂无评论

A 1/2-inch 1.3 MPixel progressive-scan ccd image sensor employing 0.25 /spl mu/m gap single-layer poly-Si electrodes

A 1/2-inch 1.3 MPixel progressive-scan CCD image sensor empl...

引用

IEEE International conference on solid-state Circuits (ISSCC)

作者： M. Furumiya K. Hatano Y. Nakashiba I. Murakami T. Yamada T. Nakano Y. Kawakami T. Kawasaki Y. Hokari Nihon Denki Kabushiki Kaisha Minato-ku Tokyo JP

A 1/2-inch 1.3 Mpixel progressive-scan interline-transfer charge-coupled device (IT-ccd) image sensor for low-power high-sensitivity digital cameras uses 0.25 /spl mu/m-gap single-layer poly-Si for ccd electrodes to reduce drive voltage and gate overlap capacitance. The device achieved a low driving voltage (2.1 V) on a horizontal ccd at a frequency of 24.5 MHz. Pixel layout and a self-aligned photodiode structure achieve a progressive-scan pixel with controlled photodiode readout characteristics. An output 3-stage source follower amplifier with new multi-oxide transistors, whose gate insulator thickness is thinner than that of a ccd register, has 17% higher gain than that obtained using a conventional amplifier. As a result, 100 mW and -90 dB smear are obtained. The fabrication process steps are reduced to 70% of those with conventional 3-layer poly-Si electrodes.

关键词： Charge-coupled image sensors Charge coupled devices Electrodes Photodiodes Image sensors Digital cameras Capacitance Low voltage Frequency Insulation

来源：评论

学校读者我要写书评

暂无评论

Electron bombardment ccd camera

Electron bombardment CCD camera

引用

conference on Digital solid state cameras - Designs and Applications

作者： Maruno, T Shirai, M Iwase, F Hakamata, N Hamamatsu Photon KK Syst Div Hamamatsu Shizuoka 43131 Japan

ISBN: (纸本)081942742X

Two kinds of Electron Bombardment ccd (EB-ccd) camera are newly developed, employing an Electron Bombardment ccd sensor made by Hamamatsu Photonics. The slow scan cooled ccd camera installs the full frame transfer type EB-ccd sensor with 512 x 512 pixel format and standard video rate camera installs the frame transfer type EB-ccd sensor( progressive scan) with 658 x 490 pixel format. For slow scan camera, EB-ccd sensor is cooled down to -25 degree C to realize high sensitivity utilizing long exposure time and very low noise performance. And instead of mechanical shutter, high speed electrical gated function is installed in this camera. Standard video rate camera has a function of recursive filter and auto background subtraction as a standard in order to get high quality image. Furthermore, camera can select both inter-laced scan and progressive scan readout mode. These cameras have been compared with the other high sensitive camera like SIT camera, photon counting camera and I-ccd camera which results in proving that these Electron Bombardment ccd camera are suitable and ideal.

关键词： cameras ccd cameras ccd image sensors sensors Charge-coupled devices Photon counting Microchannel plates Back illuminated sensors Single photon Video

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：