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检索条件"任意字段=Conference on Solid State Sensor Arrays and CCD Cameras"

共 195 条记录，以下是71-80 订阅

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Versatile building-block architecture for large area, high performance ccd imagers

Versatile building-block architecture for large area, high p...

引用

conference on solid state sensor arrays - Development and Applications II

作者： Theuwissen, A Beenhakkers, M Dillen, B Folkerts, HO Heyns, H Korthout, L Kreider, G Opmeer, P Peek, H Roks, E Rosner, H van der Sijde, A Vledder, F Philips Imaging Technol NL-5656 AA Eindhoven Netherlands

ISBN: (纸本)0819427411

A bouwblok (building-block) concept is described which allows one to fabricate several large area ccd image sensors from a single mask set. The size of the various imagers can differ both horizontally as well as vertically. The new method drastically reduces the development time and the associated cost of a new sensor. Because all imagers use of same basic pixel structure, the characteristics of new configurations can be fairly well predicted.

关键词： ccd imagers solid-state imaging modular concept mask stitching high performance imaging digital photography

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A model for equivalent ISO ccd camera speeds

A model for equivalent ISO CCD camera speeds

引用

conference on Digital solid state cameras - Designs and Applications

作者： Kriss, MA Univ Rochester Ctr Elect Imaging Syst Rochester NY 14627 USA

ISBN: (纸本)081942742X

The expanding use of ccd sensor based, digital cameras necessitates the development of a reliable method of determining an equivalent ISO speed for such cameras. This paper will briefly describe the physical differences between image capture, and the signal and noise properties of film and ccd based imaging systems. The model first addresses the ISO speed of a monochrome ccd sensor. The results of this model indicate that an equivalent ISO speed can be found when the exposure, E-m, in Lux -seconds at a signal-to-noise ratio of 30 is used to calculate the speed from the expression developed for film based systems, ISO Speed = 0.8/E-m. The model shows that calibration exposures of 0.01 seconds or less must be used to eliminate the effect of dark current on determining the "correct" ISO speed. The model is then used to calculate the effective ISO speed for a series of ccd sensors for different pixel areas, noise characteristics and quantum efficiencies. The same model is used for color cameras by introducing a color filter. The model is also used to determine what set of color filters will provide a balanced exposure for a given light source (from a neutral scale) and what electronic processing must be done to compensate for different equivalent ISO speeds between the color filter elements. The effect on ISO speed and color balance as a function of illuminant is considered. The model is also used to map the signal-to-noise characteristic of the ccd camera under usage equivalent to a film based camera.

关键词： ISO speed ccd digital still camera

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Absolute calibration of charge-coupled devices to hard 8-98 keV x-rays

Absolute calibration of charge-coupled devices to hard 8-98 ...

引用

conference on solid state sensor arrays - Development and Applications II

作者： Dunn, J Conder, AD Stewart, RE Univ Calif Lawrence Livermore Natl Lab Livermore CA 94551 USA

ISBN: (纸本)0819427411

We describe experimental techniques for characterizing the absolute response of charge-coupled devices (ccd) to incident hard x-rays using the High Energy X-ray (HEX) source at the Lawrence Livermore National Laboratory. We present responsivity and quantum detection efficiency (QDE) measurements for a standard, front-illuminated, scientific ccd to monoenergetic 8 - 98 keV K-alpha x-rays. This systematic study out to high energies reveals the contribution of different absorption processes to the ccd detection efficiency. For lower energies below 20 keV the ccd behaves like an ideal photoelectric detector as expected. Increasingly above 40 keV the photoelectric effect in the ccd epitaxial region is augmented by incoherent or Compton scattering where a fraction of the energy from the photon scattering event is transferred to the electrons and subsequently detected. The Compton scattering mechanism dominates the photoelectric effect above 100 keV giving the ccd a predicted detection efficiency which remains constant from 150 keV to 1 MeV assuming that the scattered electrons finally come to rest within the active region. These physics issues will be briefly discussed and are particularly relevant to deep active region solid-state detectors with applications for hard x-ray detection above 40 keV.

关键词： ccd x-ray calibration quantum detection efficiency K-alpha fluorescence x-ray absorption

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ccd based guiding sensor resolution enhancement

CCD based guiding sensor resolution enhancement

引用

conference on Digital solid state cameras - Designs and Applications

作者： Sobotka, M Prochazka, I Hamal, K Blazej, J Charles Univ Fac Math & Phys Dept Elect & Vacuum Phys CR-18000 Prague 8 Czech Republic

ISBN: (纸本)081942742X

The paper presents the achievements in research and development of the compact optical ccd based guiding system. The ultimate goal of the project is a modest size, low mass and rugged system to be applied for subarcsecond optical Ground-Space guiding and tracking. The system includes the optics, the ccd sensor with the readout and an image-processing algorithm. The optics consists of a diffraction limited objective, four-element lens system with the effective input aperture 90 millimeters. The objective focal length 300 mm is extended by the additional relay optics. The resulting effective focal length is 3000 millimeters, the focal spot size is 65 micrometers Airy disc diameter. The combination of the diffraction limited objective design, focal extender and mechanical construction permitted to keep the overall length bellow 600 millimeters and the total mass bellow 5 kilograms while maintaining high ruggedness at one are-second level. A sensor, the Texas Instrument ccd chip 192x164 pixels, 15 micrometers size is used. The custom designed readout and data processing hardware has been developed. Parallel communication maintains image download time 0.6 second with 12 bits amplitude resolution. The data acquisition and image processing software package running under MS Windows 95 or NT provide all functions for the camera control, data acquisition and image processing for precise target position evaluation. The position is evaluated as the centre of mass of square neighbourhood of the brightest ccd pixel. Indoor test of the ultimate position resolution using different diffraction limited images and sizes are described. The image position resolution +/- 0.03 pixel has been achieved. It corresponds to 0.03 are seconds of angular resolution of the entire guiding sensor.

关键词： optical guiding remote tracking control ccd

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Charge-transfer-efficiency (CTE) measurement techniques applied to proton-irradiated, linear charge-coupled devices

Charge-transfer-efficiency (CTE) measurement techniques appl...

引用

conference on solid state sensor arrays - Development and Applications II

作者： Dutton, TE Woodward, WF Lomheim, TS Aerospace Corp Sensor Syst Subdiv Los Angeles CA 90009 USA

ISBN: (纸本)0819427411

Charge-Transfer-Efficiency (CTE) is a parameter that is associated with the optical performance and radiometric accuracy of a Charge-Coupled Device (ccd). While modern ccd's are typically quoted as having CTE>0.99999, we show that a) this efficiency can be degraded by exposure to energetic protons and b) the measured efficiency, at least in the case of irradiated devices, is dependent on the size of the signal being transferred. A comparison of two techniques of CTE measurement is presented, with emphasis on an Fe-55 X-ray charge-generation and collection technique tailored especially for use with linear ccd's. While our technique follows the same general X-ray method widely used to characterize area ccd's, its implementation, including the processing of the resulting experimental data, is somewhat novel. The X-ray technique requires no special device circuitry or equipment and, in our configuration, may be used on virtually any linear or bilinear ccd;the same general technique is used on area arrays. It is shown that the technique is appropriate for characterizing small-signal CTE with or without a high background. It is also shown that the electrical injection CTE, while requiring the injection circuitry to be designed and built-in to the ccd structure, is more appropriate for large-signal CTE measurement. Data are presented showing experimental pre-and post-irradiation CTE measured as a function of signal level and background level for a two-phase linear ccd. Additionally, it is shown that in our tests, the CTE degraded even at very small accelerated doses (<10 kRad(Si) of ionizing proton dose), but further degradation was at least partly compensated by an enhanced background due to increasing dark currents.

关键词： charge transfer efficiency CTE X-ray charge coupled device ccd electrical injection proton irradiation

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A method for extending the dynamic range of ccd instruments

A method for extending the dynamic range of CCD instruments

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conference on solid state sensor arrays - Development and Applications II

作者： Stubbs, CW Doherty, P Diercks, A Univ Washington Dept Astron Seattle WA 98195 USA

ISBN: (纸本)0819427411

Charge Coupled Devices (ccds) are the detector of choice for instruments that detect low levels of light for wavelengths 300 nm less than or equal to lambda less than or equal to 1100 nm. Contemporary devices have read noise level equivalents of a few electrons, and the ability to store over 100,000 electrons per pixel. In order to take 111 advantage of these characteristics, while ensuring that digital quantization noise will not dominate over readout noise, the dynamic range of the readout system must exceed 18 bits. We present a simple scheme that exploits the fact that Poisson noise dominates the error budget in most contemporary ccd systems in order to achieve an effective dynamic range of over 20 bits by using dual 16 bit A/D converters of different sensitivity.

关键词： ccds analog electronics signal processing signal to noise dynamic range astronomical instruments

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EB-ccd life characteristics

EB-CCD life characteristics

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conference on solid state sensor arrays - Development and Applications II

作者： Suyama, M Kageyama, A Ema, S Kinoshita, K Maruno, T Hamamatsu Photon KK Electron Tube Ctr Toyooka Village Shizuoka 4380193 Japan

ISBN: (纸本)0819427411

Life characteristics of an EB-ccd incorporating a full frame transfer ccd (FFT-EBccd) have been evaluated. Applying -8kV to the photocathode, the accelerated life test corresponding to 3,500 hours of operation was carried out. As the result, there are no degradation of the photocathode sensitivity and the gain. However, an offset is increased linearly proportional to the operation period, including the upper and lower of the irradiated area. The increment after the life test is approximately 700 [e-/pixel] at 20 degree centigrade with a multi-pinned phase (MPP) operation. From the comparison between the MPP and the non-MPP operation of the ccd, the origin of the offset is concluded to be the increased dark current (DC) from the Si-SiO2 interface, which is damaged by the Bremsstrahlung x-ray. The DC slightly affects the signal as the offset when positive voltage to gate electrodes depletes the Si-SiO2 interface during the vertical transfer. The DC does not affect the signal at all with the MPP operation in the exposure time. The lifetime of the EBccd is calculated to be much longer than 10,000 hours, if the lifetime is defined by the period that the DC fulfills the half of the full well capacity.

关键词： EB-ccd life x-ray multi-pinned phase operation photocathode electron tube low light level imaging

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Quantum efficiency of X-ray ccds

Quantum efficiency of X-ray CCDs

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conference on solid state sensor arrays - Development and Applications II

作者： Prigozhin, G Woo, J Gregory, JA Loomis, AH Bautz, MW Ricker, GR Kraft, S MIT Ctr Space Res Cambridge MA 02139 USA

ISBN: (纸本)0819427411

We have performed precise measurements of X-ray absorption constants for all the thin films comprising ccd gate structure, namely, phosphourous doped polysilicon, silicon dioxide, and silicon nitride. X-ray absorption of these films shows large oscillations around the corresponding absorption edges: nitrogen K (400 eV), oxygen K (536 eV), silicon L and K (100 and 1840 eV, respectively). As a result, quantum efficiency of a ccd in the soft X-ray range deviates significantly from the generally assumed simple model predictions. In order to cover the range of energies from 60 eV to 3000 eV transmission measurements were performed at several synchrotron beamlines at ALS (Berkeley), PTB BESSY (Berlin), SRC (University of Wisconsin-Madison). A model of the ccd response with near edge X-ray absorption structure taken into account predicts a very complicated shape of the energy dependence of the quantum efficiency around silicon and oxygen absorption edges. Experimental measurements of ccd quantum efficiency relative to a calibrated detector were performed at BESSY for both frontside illuminated and backside illuminated ccds for energies around the oxygen absorption edge. Experimental results were found to be in a good agreement with our model.

关键词： X-rays charge coupled devices (ccd) X-ray absorption fine structure (XAFS)

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Colour cameras in Standard CMOS

Colour Cameras in Standard CMOS

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作者： Andrew J. Blanksby The University of Adelaide

学位级别：博士

A recent advancement in solid-state imaging technology known as Active Pixel sensors (APS) is poised to challenge the dominance of the established Charge-Coupled Device (ccd) technology. Traditionally CMOS imaging arrays have suffered from poor noise performance. However, the availability of CMOS with sub-micron feature dimensions has made practical the inclusion of active devices within each pixel to provide signal gain and buffering functions. Combined with techniques such as correlated-double sampling (CDS), CMOS APS image sen- sors have been developed that deliver image quality approaching that of ccd sensors. Unlike ccd sensors, the architecture of APS sensors are inherently low power and compatible with the integration of camera system electronics onto the same die as the imager. Consequently CMOS APS technology has the potential to reduce the power, size, and cost of solid-state cam- eras. While CMOS APS image sensors are already nding their way into products, a number of important issues remain open research questions. This thesis addresses two important areas of investigation, the fundamental performance limitations of CMOS APS sensors, and the devel- opment of highly integrated camera systems. After reviewing the relevant concepts of solid-state imaging and digital colour camera technology, the pcrfomiancc limitations of CMOS APS image sensors are identi ed through the experimental evaluation of a state-of-the-art colour photogate sensor. It is demonstrated that by using two levels of CDS xed-pattern noise (FPN) due to circuit mismatch is eliminated, and instead FPN performance becomes limited by non-uniforrnity of the sensor dark current, and non-uniformity of the pixel oating diffusion node capacitance. High conversion gain in the photogate pixel ensures that the temporal noise performance of the sensor is determined at the pixel level by low quantum ef ciency. At low signal levels charge transfer noise and dark current shot noise also degrade performanc

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Monte-Carlo model for describing charge transfer in irradiated ccds

Monte-Carlo model for describing charge transfer in irradiat...

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conference on solid state sensor arrays - Development and Applications II

作者： Gallagher, D Demara, R Emerson, G Frame, W Delamere, A Ball Aerosp & Technol Corp Boulder CO 80306 USA

ISBN: (纸本)0819427411

Radiation exposure of ccd devices degrades the charge transfer inefficiency (CTI) by the creation of electron trap sights within the bulk silicon. The presence of electron traps tend to smear the signal of a point-like image. This affects ccds used in star trackers where sub-pixel centroiding is required for accurate pointing knowledge. To explore the effects of radiation damage in ccd devices, we have developed a Monte-Carlo model for simulating charge transfer in buried channel ccds. The model is based on the Shockley-Read-Hall generation-recombination theory. The CTI in ccd devices was measured before and after exposure to mono-energetic 61 MeV protons. Our data show that displacement damage in the bulk silicon increases the CTI of the ccd device. CTI was measured on irradiated ccd devices at various temperatures from -10 to -150 Celsius, thus providing estimates of the electron trap energy levels created in the ccd silicon. The dominate post-radiation trap energy level was the silicon E-center found to be at an energy of 0.46 eV, which is in good agreement with other published values. To fit our data over the complete temperature range, we also required electron traps of 0.36 eV and 0.21 eV. Our model also includes the effects of charge cloud growth with signal volume and clocking rates of the ccd device. Determining the types and levels of radiation a ccd device will encounter during, its operational life is very important for choosing ccd operating parameters.

关键词： Charge-coupled devices Data modeling Monte Carlo methods Silicon Temperature metrology Instrument modeling Radiation effects ccd image sensors Stars Aerospace engineering

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