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International Conference on Space Optics 2010, ICSO 2010

作者： Grabarnik, S. Taccola, M. Maresi, L. Moreau, v. De vos, L. versluys, J. Gubbels, G. ESA ESTEC Netherlands AMOS Belgium OIP Belgium TNO Netherlands

ISBN: (纸本)9781510616196

Three mirror anastigmat (TMA) telescope designs [1] had been implemented in different projects ranging from the narrow Field-Of-view large instruments as Quickbird (2° FOv) [2] to smaller telescopes as JSS 12° FOv developed for RapidEye mission [3]. This telescope configuration had been also selected for the PROBA-v payload, the successor of vegetation, a multispectral imager flown on Spot-4 and subsequently on Spot-5 French satellites for Earth Observation and defence. PROBA-v, small PROBA-type satellite, will continue acquisition of vegetation data after the lifetime of Spot-5 expires in 2012. The PROBA-v TMA optical design achieves a 34° FOv across track and makes use of highly aspherical mirrors. Such a telescope had become feasible due to the recently developed Single Point Diamond Turning fabrication technology. The telescope mirrors and structure are fabricated in aluminium and form an athermal optical system. This paper presents the development of the compact wide FOv TMA, its implementation in PROBA-v multispectral imager and reviews optics fabrication technology that made this development possible. Furthermore, this TMA is being used in combination with a linear variable filter in a breadboard of a compact hyperspectral imager. Moreover, current technology allows miniaturization of TMA, so it is possible to use a TMA-based hyperspectral imager on a cubesat platform. © Copyright SPIE.

关键词： vegetation

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Inverse-designed Diamond Photonics

arXiv

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arXiv 2018年

作者： Dory, Constantin vercruysse, Dries Yang, Ki Youl Sapra, Neil v. Rugar, Alison E. Sun, Shuo Lukin, Daniil M. Piggott, Alexander Y. Zhang, Jingyuan L. Radulaski, Marina Lagoudakis, Konstantinos G. Su, Logan vučković, Jelena E. L. Ginzton Laboratory Stanford University StanfordCA94305 United States Electrical and Computer Engineering University of California DavisCA95616 United States Department of Physics University of Strathclyde GlasgowG4 0NG United Kingdom

Diamond hosts optically active color centers with great promise in quantum computation, networking, and sensing. Realization of such applications is contingent upon the integration of color centers into photonic circuits. However, current diamond quantum optics experiments are restricted to single devices and few quantum emitters because fabrication constraints limit device functionalities, thus precluding color center integrated photonic circuits. In this work, we utilize inverse design methods to overcome constraints of cutting-edge diamond nanofabrication methods and fabricate compact and robust diamond devices with unique specifications. Our design method leverages advanced optimization techniques to search the full parameter space for fabricable device designs. We experimentally demonstrate inverse-designed photonic free-space interfaces as well as their scalable integration with two vastly different devices: classical photonic crystal cavities and inverse-designed waveguide-splitters. The multi-device integration capability and performance of our inverse-designed diamond platform represents a critical advancement toward integrated diamond quantum optical circuits. Copyright © 2018, The Authors. All rights reserved.

关键词： Diamonds

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Wireless Power Transfer Strategies for Implantable Bioelectronics

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IEEE Reviews in Biomedical engineering 2017年 10卷 136-161页

作者： Agarwal, Kush Jegadeesan, Rangarajan Guo, Yong-Xin Thakor, Nitish v. Department of Electrical and Computer Engineering National University of Singapore Singapore117579 Singapore Singapore117456 Singapore Samsung DMC Research and Development Center Seoul Korea Republic of NUS Suzhou Research Institute Suzhou215123 China Department of Biomedical Engineering National University of Singapore Singapore117579 Singapore Department of Medicine National University of Singapore Singapore117579 Singapore

Neural implants have emerged over the last decade as highly effective solutions for the treatment of dysfunctions and disorders of the nervous system. These implants establish a direct, often bidirectional, interface to the nervous system, both sensing neural signals and providing therapeutic treatments. As a result of the technological progress and successful clinical demonstrations, completely implantable solutions have become a reality and are now commercially available for the treatment of various functional disorders. Central to this development is the wireless power transfer (WPT) that has enabled implantable medical devices (IMDs) to function for extended durations in mobile subjects. In this review, we present the theory, link design, and challenges, along with their probable solutions for the traditional near-field resonant inductively coupled WPT, capacitively coupled short-ranged WPT, and more recently developed ultrasonic, mid-field, and far-field coupled WPT technologies for implantable applications. A comparison of various power transfer methods based on their power budgets and WPT range follows. Power requirements of specific implants like cochlear, retinal, cortical, and peripheral are also considered and currently available IMD solutions are discussed. Patient's safety concerns with respect to electrical, biological, physical, electromagnetic interference, and cyber security from an implanted neurotech device are also explored in this review. Finally, we discuss and anticipate future developments that will enhance the capabilities of current-day wirelessly powered implants and make them more efficient and integrable with other electronic components in IMDs. © 2017 IEEE.

关键词： Energy transfer

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Flow analysis in the upper plenum of the Micas model in support of the Astrid Reactor program 17

Flow analysis in the upper plenum of the Micas model in supp...

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17th International Topical Meeting on Nuclear Reactor Thermal Hydraulics, NURETH 2017

作者： Guenadou, D. Aubert, P. Biscay, v. Descamps, J.-P. CEA Cadarache DTN/STCP/LHC Saint Paul lez Durance13108 France

The sodium cooled reactor ASTRID project (Advanced Sodium Technological Reactor for Industrial Demonstration) led by the CEA has entered the basic design phase. current developments are focused on the large equipment such as the vessels. Even if France has a great experience in the SFR technology because of the 90’s EFR program, new experiments are needed both to qualify the design options and to validate the code calculations. Since experiments with sodium are more complex to carry out, most tests are conducted in models using water as simulant fluid. According to the dimensionless analysis, experiments can be designed to be representative of the phenomenology to study. The MICAS mock-up of the ASTRID upper plenum was designed regarding this methodology using the Froude number for the free surface flow issues and the Richardson number for the thermal studies. It was built at a 1/6 scale in transparent polymer for optical measurements. First experiments were dedicated to study the free surface flow and the gas entrainment. Experimental conditions, such as the water flow rate, were calculated to get the representative Froude number. From those operating conditions and the MICAS geometry, calculations were led using TRIO_CFD at CEA and Adapco StarCCM+ at AREvA. This article is devoted to present the methodology and the results of the velocity measurements in the MICAS model dedicated to validate the code calculations. A PIv system was used to measure the velocity. As this technique is based on an optical access to two perpendicular planes, its implementation on the MICAS mock-up was complex. Indeed, many immerged components, such as the pump pits and the decay heat exchangers, prevent any optical access in specific areas. Most measurements were performed around the core, the Intermediate Heat Exchanger (IHX) and the Above Core Structure (ACS). The integration of the velocity around the ACS allows calculating the flow rate crossing this structure. As the control rods i

关键词： Hydraulics

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Sequential Processing: Spontaneous Improvements in Film Quality and Interfacial engineering for Efficient Perovskite Solar Cells

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SOLAR RRL 2018年第5期2卷

作者： Wang, Shuangjie Li, Xuanhua Tong, Tengteng Han, Jian Zhang, Yuanyuan Zhu, Jinmeng Huang, Zhixiang Choy, Wallace C. H. Northwestern Polytech Univ Sch Mat Sci & Engn Ctr Nano Energy Mat State Key Lab Solidificat Proc Xian 710072 Shaanxi Peoples R China Shaanxi Joint Lab Graphene NPU Xian 710072 Shaanxi Peoples R China NPU QMUL Joint Res Inst Adv Mat & Struct JRI AMAS Xian Shaanxi Peoples R China Anhui Univ Minist Educ Key Lab Intelligent Comp & Signal Proc 3 Feixi Rd Hefei 230039 Anhui Peoples R China Univ Hong Kong Dept Elect & Elect Engn Pokfulam Rd Hong Kong Hong Kong Peoples R China

Planar perovskite solar cells (PSCs) represent a promising alternative to solar cells due to their many advantages. To improve device performance, it is necessary to develop PSCs with good interfacial engineering and film crystallinity, which are two critical aspects of high-performance PSCs. However, both aspects are relatively independent and difficult to simultaneously enhance. This study reports an effective and universal sequential solution deposition process to specifically address this issue. When the top layer of the hole-transport material (HTM) is deposited from the dimethylsulfoxide (DMSO) cosolvent, the HTM penetrates a predeposited bottom layer of perovskite (the light-absorption layer) during the spin-coating process, resulting in an interdiffusion structure with layer-evolved nanomorphology. In addition, the cosolvent DMSO captures vacant perovskite CH3NH3+ groups at the boundaries of perovskite grains, resulting in the growth of large-sized grains. Compared to a conventional device, this new design realizes enhanced optical absorption, reduced crystal defects in perovskite film, tight contact, and well-matched energy-level alignment between the perovskite film and the hole-transport layer (HTL). This strategy enables the fabrication of PSCs with enhanced short-circuit current density (J(sc)), fill factor (FF), and open circuit voltage (v-oc), resulting in an enhanced power conversion efficiency (PCE) of 19.40% from 15.29% under standard testing conditions. This sequential deposition represents a feasible route for the preparation of high-performance PSCs with spontaneous improvements in film quality and interfacial engineering for photovoltaic applications.

关键词： interfacial engineering optoelectronic properties perovskite grain size perovskite solar cells power conversion efficiency

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TC211 general report of the XIX ICSMGE: Ground improvement works 19

TC211 general report of the XIX ICSMGE: Ground improvement w...

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19th International Conference on Soil Mechanics and Geotechnical engineering, ICSMGE 2017

作者： Huybrechts, Noël Denies, Nicolas Dijkstra, Jeroen Rujikiatkamjorn, Cholachat Racinais, Jérôme van Der Stoel, Almer KU Leuven Department of ISSMGE TC211 Belgium Secretary of ISSMGE TC211 Belgium Cofra B.V. Netherlands University of Wollongong Australia Menard France CRUX Engineering BV Netherlands

The TC211 General Report highlights the significant amount of 55 papers of the Technical Sessions of the XIX ICSMGE dedicated to Ground Improvement works. All papers that have been reviewed are referred (in bold) in the General Report in order to provide a balanced overview of the entire Technical Sessions. This General Report discusses the latest developments and current researches in the field of Ground Improvement (GI) works. The various GI techniques are classified considering the official TC211 classification proposed by Chu et al. (2009). The present General Report deals with several aspects of GI works: execution processes, mechanical characterization of the treated material (in laboratory or in situ), case history, Quality Assurance/Quality Control (QA/QC) activities and design aspects. Conceptual works and numerical modeling are supported by laboratory and field investigations - with in situ monitoring and large scale tests. © 2017 19th ICSMGE Secretariat. All rights reserved.

关键词： Soil mechanics

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Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides

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ACS NANO 2017年第4期11卷 4077-4085页

作者： Lee, Sung-Min Dhar, Purnim Chen, Huandong Montenegro, Angelo Liaw, Lauren Kang, Dongseok Ga, Boju Benderskii, Alexander v. Yoon, Jongseung Kookmin Univ Sch Mat Sci & Engn Seoul 02707 South Korea Univ Southern Calif Dept Chem Los Angeles CA 90089 USA Univ Southern Calif Dept Chem Engn & Mat Sci Los Angeles CA 90089 USA Univ Southern Calif Dept Elect Engn Los Angeles CA 90089 USA

Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and down-shifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 mu m-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (similar to 40.1 mA/cm(2)) and energy conversion efficiency (similar to 12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by similar to 13.6 mA/cm(2) compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.

关键词： photovoltaics silicon solar cells upconversion plasmonic nanostructure luminescent solar concentrator

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Effect of metal-fingers/doped-ZnO transparent electrode on performance of GaN/InGaN solar cell

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Journal of Semiconductors 2017年第9期38卷 1-7页

作者： S.R.Routray T.R.Lenka Microelectronics and VLSI Design Group Department of Electronics and Communication EngineeringNational Institute of Technology SilcharAssam788010India

The effect of doped-ZnO transparent conductive oxide （TCO） with metal （Ag）-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements （such as B, A1, Ga, In and Sn） with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-InGaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO：Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes. The device achieves open circuit voltage -2.525 v, short circuit current -4.256 mA/cm^2, fill factor -87.86% and efficiency -9.22% under 1 Sun, air mass 1.5 global illumination.

关键词： Ag-finger/doped-ZnO TCO resistivity dopants GaN/InGaN solar cell

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Toward deterministic construction of low noise avalanche photodetector materials

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APPLIED PHYSICS LETTERS 2018年第10期113卷 102106-102106页

作者： Rockwell, A. K. Ren, M. Woodson, M. Jones, A. H. March, S. D. Tan, Y. Yuan, Y. Sun, Y. Hool, R. Maddox, S. J. Lee, M. L. Ghosh, A. W. Campbell, J. C. Bank, S. R. Univ Texas Austin Dept Elect & Comp Engn Austin TX 78758 USA Univ Virginia Dept Elect & Comp Engn Charlottesville VA 22904 USA Univ Illinois Dept Elect & Comp Engn Urbana IL 61801 USA Univ Illinois Dept Mat Sci & Engn Urbana IL 61801 USA Univ Virginia Dept Phys Charlottesville VA 22904 USA

Over the past 40+ years, III-v materials have been intensively studied for avalanche photodetectors, driven by applications including optical communications, imaging, quantum information processing, and autonomous vehicle navigation. Unfortunately, impact ionization is a stochastic process that introduces noise, thereby limiting sensitivity and achievable bandwidths, leading to intense effort to mitigate this noise through the identification of different materials and device structures. Exploration of these materials has seen limited success as it has proceeded in a largely ad hoc fashion due to little consensus regarding which fundamental properties are important. Here, we report an exciting step toward deterministic design of low-noise avalanche photodetector materials by alternating the composition at the monolayer scale;this represents a dramatic departure from previous approaches, which have concentrated on either unconventional compounds/alloys or nanoscale band-engineering. In particular, we demonstrate how to substantially improve upon the noise characteristics of the current state-of-the art telecom avalanche multipliers, In0.52Al0.48As grown on InP substrates, by growing the structure as a strain-balanced digital alloy of InAs and AlAs layers, each only a few atomic layers thick. The effective k-factor, which has historically been considered a fundamental material property, was reduced by 6-7 x from k= 0.2 for bulk In0.52Al0.48As to k= 0.05 by using the digital alloy technique. We also demonstrate that these "digital alloys" can significantly extend the photodetector cutoff wavelength well beyond those of their random alloy counterparts. Published by AIP Publishing.

关键词： III-v semiconductors

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Reticle enhancement techniques toward iN7 metal2 8

Reticle enhancement techniques toward iN7 metal2

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Extreme Ultraviolet (EUv) Lithography vIII 2017

作者： Gillijns, W. Tan, L.E. Drissi, Y. Blanco, v. Trivkovic, D. Kim, R.H. Gallagher, E. McIntyre, G. Imec Kapeldreef 75 Leuven3001 Belgium

ISBN: (纸本)9781510607378

The imec N7 (iN7) platform has been developed to evaluate EUv patterning of advanced logic BEOL layers. Its design is based on a 42 nm first-level metal (M1) pitch, and a 32 nm pitch for the subsequent metal layers1. With these pitches, the iN7 node is an 'aggressive' full-scaled N7, corresponding to IDM N7, or foundry N5. Regarding the metal 2 layer, imec is evaluating two integration approaches: EUv single print and SAQP+EUv Block. Extensive work is reported on both approaches2,3. The work detailed in this paper will deal about the computational work done prior to tape-out for the EUv direct print option. We will discuss the EUv source mask optimization for an ASML NXE:3300 EUv scanner. Afterwards we will shortly touch upon OPC compact modeling and more extensively on OPC itself. Based on the current design rules and MRC, printability checks indicate that only limited process windows are obtained. We propose ways to improve the printability through MRC and design. Applying those changes can potentially lead to a sufficient process window. © 2017 SPIE.

关键词： Metals

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