Growing III-v O-band lasers directly on patterned silicon photonics wafers has the potential to decrease the cost and increase the manufacturing throughput of integrated photonics chips needed for applications in data...
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This paper presents the design, fabrication, and characterization of single-photon avalanche diodes (SPADs) fabricated in 110 nm CMOS technology, optimized for photon-counting imaging and LiDAR applications. The SPADs...
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Since the introduction of EUv, ASML and its industry partners have continuously improved the reticle defectivity levels in the volume manufacturing flows. In this paper we will show the progress over the years in reti...
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This study introduces an affordable approach to developing a millimeter-wave (MMW) focal plane array (FPA) using glow discharge detectors (GDDs) with rapid readout capabilities. The system investigates the effect of M...
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This study reports the performance of an InAs/GaSb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-...
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This study reports the performance of an InAs/GaSb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-band k·p method, and the nBn structure is designed with the M barrier. The detector is prepared by wet etching, which is simple in manufacturing process. X-ray diffraction(XRD) and atomic force microscope(AFM) characteristics indicate that the detector material has good crystal quality and surface morphology. The saturation bias of the spectral response measurements at 77 K is 300 m v, and the device is promising to work at a temperature of 140 K. Energy gap of T2SLs versus temperature is fitted by the varshni curve, and zero temperature bandgap Eg(0), empirical coefficients α and β are extracted. A dark current density of 3.2×10-5A/cm2and differential resistance area(RA) product of 1.0×104Ω·cm2are measured at 77 K. The dominant mechanism of dark current at different temperature ranges is analyzed. The device with a 50% cutoff wavelength of 4.68 μm exhibits a responsivity of 0.6 A/W, a topside illuminated quantum efficiency of 20% without antireflection coating(ARC), and a detectivity of 9.17×1011cm·Hz1/2/W at 77 K and 0.3 v.
Dimensional inspection during manufacturing of high-temperature forging workpieces is still an unsolved research topic. In this work, an approach to reconstruct the hot forging surface using passive stereovision was p...
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In recent years, the use of organic materials have gained the interest for photovoltaic (Pv) applications owing to its ability to yield maximum throughput, solution phase processes, thereby resulting in low cost power...
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We demonstrate an iterative and inverse design of a segmented reflector used to illuminate the road with a uniform light distribution and reduced glare to the oncoming traffic. design is set to meet the StvZO standard...
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ISBN:
(数字)9781510644670
ISBN:
(纸本)9781510644670
We demonstrate an iterative and inverse design of a segmented reflector used to illuminate the road with a uniform light distribution and reduced glare to the oncoming traffic. design is set to meet the StvZO standard. The maximum brightness obtained is 1460 candela, which is five times brighter than a conventional headlamp of urban shared electric scooters and bicycles, resulting in improved visibility in dark environments. A prototype was built and tested at various environments. The tolerance analysis showed no negative influence on the desired standard light distribution. In addition to this iterative approach, a ray tracing code has been developed for inverse design and to map a desired uniform road illumination pattern back to the candela sensor for corresponding reflector design.
The present work deals with the structural, thermal, morphological, optical, electrochemical and magnetic behavior probes of tetragonal tin dioxide (SnO2) nanoparticles (NPs) that were synthesized via chemical precipi...
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Self-charging power systems collecting energy harvesting technology and batteries are attracting extensive *** solve the disadvantages of the traditional integrated system,such as highly dependent on energy supply and...
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Self-charging power systems collecting energy harvesting technology and batteries are attracting extensive *** solve the disadvantages of the traditional integrated system,such as highly dependent on energy supply and complex structure,an airrechargeable Zn battery based on MoS_(2)/PANI cathode is *** from the excellent conductivity desolvation shield of PANI,the MoS_(2)/PANI cathode exhibits ultra-high capacity(304.98 mAh g^(−1) in N_(2) and 351.25 mAh g^(−1) in air).In particular,this battery has the ability to collect,convert and store energy simultaneously by an airrechargeable process of the spontaneous redox reaction between the discharged cathode and O2 from *** air-rechargeable Zn batteries display a high open-circuit voltage(1.15 v),an unforgettable discharge capacity(316.09 mAh g^(−1) and the air-rechargeable depth is 89.99%)and good air-recharging stability(291.22 mAh g^(−1) after 50 air recharging/galvanostatic current discharge cycle).Most importantly,both our quasi-solid zinc ion batteries and batteries modules have excellent performance and *** work will provide a promising research direction for the material design and device assembly of the next-generation self-powered system.
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