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3rd International Conference on Computer Science and Communication Technology, ICCSCT 2022

作者： Xiao, Yan Chen, Yongli Zhou, Chunliang He, Qing Ma, Yongwang State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology Beijing Smart-Chip Microelectronics Technology Co. Ltd. Beijing100192 China Beijing Engineering Research Center of High-Reliability IC With Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co. Ltd. Beijing100192 China

ISBN: (纸本)9781510661240

In this study, a circuit structure of ring current controlled oscillator (ICO) is proposed. Through the cooperation of counter, bootstrap switch with special timing control and special ICO circuit module, the output frequency accuracy in traditional ring OSC is avoided from being affected by voltage range limitation and comparator delay, the temperature and voltage characteristics of output clock are improved, and the output clock with higher accuracy is obtained under low voltage and low power consumption. The test chip is manufactured by 0.18 µm CMOS process. The power supply voltage is 0.77 v, and its output frequency is 1.32 MHz. The deviation of the output clock with the power supply voltage is within ±1%, the deviation with the temperature is within ±2.5%, and the power consumption is 382 nW. © 2022 SPIE.

关键词： Clocks

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Implementation of Digital Logic Gate Families Using Low Operating Flexible Organic TFT Based on Innovative Compact Modeling Approach

Implementation of Digital Logic Gate Families Using Low Oper...

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Industrial Electronics: developments & Applications (ICIDeA), IEEE International Conference on-

作者： Mukuljeet Singh Mehrolia Ashwini Kumar Mishra Rasveen Singh Surendra Yadav vijayakumar Devarakonda Abhishek Kumar Singh Department of Electrical and Electronics Engineering Rajiv Gandhi Institute of Petroleum Technology Amethi India Department of Electtonics and Commuication Engineering GLA University Mathura India Department of Electronics and Communication Engineering G.D. Goenka University Gurugram India School of Computing MIT Vishwaprayag University Solapur India Department of Electronics and Commuication Engineering Indian Institute of Information Technology Design and Manufacturing Kurnool India

ISBN: (数字)9798331533205

ISBN: (纸本)9798331533212

The article demonstrates the brief fabrication method of the flexible organic thin film transistor (OTFT) developed earlier and its utilization for the development of various basic logic gates (NAND, NOR, AND, NOT, and OR Gates). The compact modeling of the fabricated device and the implementation of the logic gates has been carried out using Silvaco-Techmodeler and Silvaco-Gateway tools, respectively. The device can operate at -2 v supply with good electrical characteristics in terms of $-2\mu \mathrm{A}$ drain current, $\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}\sim 10^{3}$ ‘ and $\mu_{p}\sim 0.1\text{cm}^{2}/\mathrm{v}-\sec$ respectively. The Silvaco-Gateway tool implements the logic gates with excellent characteristics, demonstrating logic swing of 1.18 v and a delay of 3.7 ns. The logic gates also possess a good transient characteristic with all four possible logic inputs (00, 01, 10, and 11). The Silvaco-Techmodeler tool models the device with an accuracy of approximately 100%, with a 0.07% and 0.08% error between the experimental and modeled data, respectively. The cost-efficiently fabricated solution-processed transistor in this article can be further utilized in the fields of medical and sensing applications.

关键词： Performance evaluation Low voltage Accuracy Logic gates Data models Organic thin film transistors Sensors Transistors Polymers Transient analysis

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design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor

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Frontiers of Information Technology & Electronic engineering 2022年第1期23卷 158-170页

作者： Yang WANG Xiangliang JIN Jian YANG Feng YAN Yujie LIU Yan PENG Jun LUO Jun YANG School of Physics and Electronics Hunan Normal UniversityChangsha410081 China School of Mechatronic Engineering and Automation Shanghai UniversityShanghai200444 China Faculty of Engineering Western UniversityLondonONN6A 3K7Canada

The input/output(I/O)pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge(ESD)protection *** is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier(NBL-GCSCR)manufactured by the 0.18µm standard bipolar-CMOS-DMOS(BCD)process to meet this ***,we propose an on-chip integrated novel deep N-well gate-controlled SCR(DNW-GCSCR)with a high failure level to effectively solve the problems based on the same semiconductor *** computer-aided design(TCAD)simulation is used to analyze the device *** are tested by transmission line pulses(TLP)to obtain accurate ESD *** holding voltage(24.03 v)of NBL-GCSCR with the longitudinal bipolar junction transistor(BJT)path is significantly higher than the holding voltage(5.15 v)of DNW-GCSCR with the lateral SCR path of the same ***,the failure current of the NBL-GCSCR device is 1.71 A,and the failure current of the DNW-GCSCR device is 20.99 *** the gate size of DNW-GCSCR is increased from 2µm to 6µm,the holding voltage is increased from 3.50 v to 8.38 *** optimized DNW-GCSCR(6µm)can be stably applied on target readout circuits for on-chip electrostatic discharge protection.

关键词： Electric breakdown Semiconductor device reliability CMOS technology

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NUMERICAL MODELLING OF LIQUEFACTION AROUND MARINE STRUCTURES - PROGRESS AND RECENT developments 41

NUMERICAL MODELLING OF LIQUEFACTION AROUND MARINE STRUCTURES...

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ASME 41st International Conference on Ocean, Offshore and Arctic engineering (OMAE)

作者： Windt, C. Goseberg, N. Schimmels, S. Kudella, M. Shanmugasundaram, R. Rusche, H. Sumer, B. M. Kirca, v. S. O. vanjakula, v. Adam, F. Majewski, D. Kazimierowicz-Frankowska, K. Hrycyna, G. Tech Univ Carolo Wilhelmina Braunschweig Leichtweiss Inst Hydraul Engn & Water Resources Braunschweig Germany Forschungszentrum Kuste Merkurstr 11 Hannover Germany WIKKI GmbH Ziegelbergsweg 68 Wernigerode Germany Istanbul Tech Univ BM SUMER Consultancy & Res ARI Teknokent 115 Istanbul Turkey GICON GmbH Tiergartenstr 48 Dresden Germany Polish Acad Sci Inst Hydroengn Koscierska 7 Gdansk Poland PROJMORS Ltd Ul Narwicka 2D Gdansk Poland

ISBN: (纸本)9780791885949

The liquefaction around marine structures can lead to severe structural failure and the susceptibility of seabed soil to liquefaction at a specific installation site of, e.g., floating offshore wind turbines should be included within the design process and site evaluation. To that end, advanced prediction tools based on numerical modelling can provide valuable insight into the hydro-geotechnical processes. However, due to the complex interaction of the underlying physics, developing a holistic modelling framework for seabed liquefaction is a challenging task. The NuLIMAS research project (Numerical modelling of seabed liquefaction around marine structures) aims at the development of such a numerical model of seabed liquefaction implemented in the OpenFOAM((R)) framework. This paper provides an overview of the NuLIMAS project, laying out the current state of the art of experimental and numerical modelling approaches for seabed liquefaction and presenting some initial results.

关键词： Numerical models

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Analysis of Isolated Bi-Directional CLLC DC-DC Converters for Fast Electric-vehicle (Ev) Battery Charging

Analysis of Isolated Bi-Directional CLLC DC-DC Converters fo...

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Industrial Electronics: developments & Applications (ICIDeA), IEEE International Conference on-

作者： Dhirendra Kumar Mallick Sarat Chandra Swain Pradeep Kumar Sahu Satyaranjan Jena Suchismita Roy Ritesh Dash School of Electrical Engineering KIIT Deemed to be University Bhubaneswar India School of EEE REVA University Bangalore India

ISBN: (数字)9798331533205

ISBN: (纸本)9798331533212

Bidirectional onboard chargers play a vital role in electric vehicles (Evs), contributing to smart grid applications by enabling functions such as peak load management and supporting grid stability through frequency and voltage regulation. However, traditional full-bridge dual-active bridge (FBDAB) resonant converters commonly used in these systems face considerable efficiency losses, particularly during reverse power flow and when operating away from their resonant frequency-a condition often caused by fluctuations in battery voltage. To overcome these challenges, this paper presents a bidirectional battery charger based on a CLLC resonant converter with efficient tracking mechanism. The converter's steady-state behavior is analyzed under both grid-to-vehicle (G2v) charging and vehicle-to-grid (v2G) discharging conditions. By maintaining the switching frequency close to the ideal resonant point, this design successfully lowers circulating currents in the resonant tank and transformer, decrease losses in MOSFETs, and limits the rate of current change in the diodes. Simulations comparing this approach to a FBDAB resonant converter with fixed DC demonstrate the enhanced efficiency and superior performance of the proposed system.

关键词： Battery chargers vehicle-to-grid voltage fluctuations Resonant frequency Resonant converters Bidirectional control Zero voltage switching Batteries Zero current switching voltage control

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current developments in Lens design and optical engineering XX

Current Developments in Lens Design and Optical Engineering ...

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current developments in Lens design and optical engineering XX 2019

ISBN: (纸本)9781510629011

The proceedings contain 29 papers. The topics discussed include: fundus camera versus smartphone camera attachment: image quality analysis;a water-polydimethylsiloxane liquid lens for variable focus experiments in an undergraduate laboratory;deconvolution process with GPU in a wavefront coding microscopy system;exposure of restore-L camera optical elements to a simulated orbital radiation environment;the design of a four-mirror anti-astigmatism astronomical telescope;introducing a dynamic deep neural network to infer lens design starting points;and application of GPUs in optical design software.

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optical and Electrical Characterization of Single-Photon Avalanche Diodes Fabricated in CMOS Technology

Optical and Electrical Characterization of Single-Photon Ava...

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IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia)

作者： Eunsung Park Woo-Young Choi Myung-Jae Lee Department of Electrical and Electronic Engineering Yonsei University Seoul South Korea

ISBN: (数字)9798331530839

ISBN: (纸本)9798331530846

This paper presents the design, fabrication, and characterization of single-photon avalanche diodes (SPADs) fabricated in 110 nm CMOS technology, optimized for photon-counting imaging and LiDAR applications. The SPADs are designed with active region sizes of $5 \mu ~\mathrm{m}, 10 \mu ~\mathrm{m}, 15 \mu ~\mathrm{m}$ , and 20 $\mu \mathrm{m}$ , and feature a retrograde virtual guard-ring (GR) structure to prevent premature edge breakdown. Electrical and optical characteristics, including current-voltage (I-v) curve, dark count rate (DCR), and photon detection probability (PDP), were measured to evaluate the performance of SPADs.

关键词： Integrated optics Laser radar optical design optical device fabrication optical variables measurement CMOS technology optical imaging optical sensors Single-photon avalanche diodes Photonics

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A Multimodal and Multifunctional CMOS Cellular Interfacing Array for Digital Physiology and Pathology Featuring an Ultra Dense Pixel Array and Reconfigurable Sampling Rate

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IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS 2022年第6期16卷 1057-1074页

作者： Wang, Adam Y. Y. Sheng, Yuguo Li, Wanlu Jung, Doohwan Junek, Gregory v. v. Liu, Hangxing Park, Jongseok Lee, Dongwon Wang, Mian Maharjan, Sushila Kumashi, Sagar Hao, Jin Zhang, Yu S. S. Eggan, Kevin Wang, Hua Georgia Inst Technol Sch Elect & Comp Engn Atlanta GA 30332 USA Swiss Fed Inst Technol Dept Informat Technol & Elect Engn CH-8092 Zurich Switzerland Harvard Med Sch Brigham & Womens Hosp Dept Med Div Engn Med Cambridge MA 02139 USA Harvard Univ Harvard Stem Cell Inst Dept Stem Cell & Regenerat Biol Cambridge MA 02138 USA

The article presents a fully integrated multimodal and multifunctional CMOS biosensing/actuating array chip and system for multi-dimensional cellular/tissue characterization. The CMOS chip supports up to 1,568 simultaneous parallel readout channels across 21,952 individually addressable multimodal pixels with 13 mu m x 13 mu m 2-D pixel pitch along with 1,568 Pt reference electrodes. These features allow the CMOS array chip to perform multimodal physiological measurements on living cell/tissue samples with both high throughput and single-cell resolution. Each pixel supports three sensing and one actuating modalities, each reconfigurable for different functionalities, in the form of full array (FA) or fast scan (FS) voltage recording schemes, bright/dim optical detection, 2-/4-point impedance sensing (ZS), and biphasic current stimulation (BCS) with adjustable stimulation area for single-cell or tissue-level stimulation. Each multi-modal pixel contains an 8.84 mu m x 11 mu m Pt electrode, 4.16 mu m x 7.2 mu m photodiode (PD), and in-pixel circuits for PD measurements and pixel selection. The chip is fabricated in a standard 130nm BiCMOS process as a proof of concept. The on-chip electrodes are constructed by unique design and in-house post-CMOS fabrication processes, including a critical Al shorting of all pixels during fabrication and Al etching after fabrication that ensures a high-yield planar electrode array on CMOS with high biocompatibility and long-term measurement reliability. For demonstration, extensive biological testing is performed with human and mouse progenitor cells, in which multidimensional biophysiological data are acquired for comprehensive cellular characterization.

关键词： Sensors Biomedical monitoring optical arrays Biosensors voltage measurement voltage control Pathology Biosensor cell-based assay cellular recording COvID-19 digital pathology digital physiology high resolution high throughput impedance sensing microelectrode array (MEA) multifunctionality multimodality optical detection pandemic parallel recording stimulation switch matrix (SM)

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A Ka-Band current-reuse LNA in 100nm GaAs Process

A Ka-Band Current-reuse LNA in 100nm GaAs Process

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IEEE International Wireless Symposium (IWS)

作者： NengYuan Zhong ShiWei Hu LiHong Chen ZeTian Lin Yao Li Xiang Wang XiaoWei Zhu YanJie Wang School of Microelectronics South China University of Technology Guangzhou China School of Electronic and Optical Engineering Nanjing University of Science and Technology Nanjing China School of Information Science and Engineering Southeast University Nanjing China

ISBN: (数字)9798350389999

ISBN: (纸本)9798350390001

In this paper, a design and implementation of a low-noise amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) chip operating at Ka-band (30-40GHz) is presented. The proposed chip utilizes a current-reuse structure, which significantly simplifies the design and save the current consumption from one DC supply. A three-stage common-source amplifier is fabricated in 100nm GaAs pHEMT process. Measurement results show a noise figure of less than 2.2dB, gain of 18dB, power consumption of 70mW from 5v supply, and an output 1dB compression point (P1dB) of 4.5dBm.

关键词： Semiconductor device measurement Noise figure Low-noise amplifiers Power demand current measurement Gallium arsenide PHEMTs Prototypes Topology Gain

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Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

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Light(Science & Applications) 2021年第8期10卷 1409-1420页

作者： Caroline E.Reilly Stacia Keller Shuji Nakamura Steven P.DenBaars Materials University of CaliforniaSanta BarbaraCA 93106USA Electrical and Computer Engineering University of CaliforniaSanta BarbaraCA 93106USA

Using one material system from the near infrared into the ultraviolet is an attractive goal,and may be achieved with(ln,AI,Ga)***Ⅲ-N material system,famous for enabling blue and white solid-state lighting,has been pushing towards longer wavelengths in more recent *** a bandgap of about 0.7 ev,InN can emit light in the near infrared,potentially overlapping with the part of the electromagnetic spectrum currently dominated byⅢ-As andⅢ-P *** has been the case in these otherⅢ-v material systems,nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic *** the case of InN,these nanostructures have been in the development stage for some time,with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device *** review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures,focusing on how precursor choices,crystallographic orientation,and other growth parameters affect the *** optical properties of InN nanostructures will also be assessed,with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes,laser diodes,and photodetectors.

关键词： optoelectronic quantum chemical

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