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Smart and Sustainable developments in Electrical engineering (SSDEE), IEEE International Conference on

作者： Urvashiben Rathod Darsh v. Pawar Siddharthsingh K. Chauhan Abhisek Parida P. N. Tekwani Dept. of Electrical Engineering Institute of Technology Nirma University Ahmedabad India

ISBN: (数字)9798331542108

ISBN: (纸本)9798331542115

This paper compares single-stage and dual-stage Improved Linear Sinusoidal Tracer (ILST) based three-phase grid-tied photovoltaic (Pv) systems. These systems facilitate the integration of solar energy into grid while improving the power quality of the distribution network. This design incorporates Maximum Power Point Tracking (MPPT), Pv power injection into the grid, harmonic reduction at the Point of Common Coupling (PCC), and grid current balancing. Both single-stage and dual-stage configurations utilize a three-phase voltage source converter (vSC) controlled by an ILST algorithm. The single-stage and dual-stage systems are modeled and simulated using MATLAB. This ILST control algorithm of grid-tied Pv system helps to maintain Total Harmonic Distortion (THD) of PCC voltages and grid currents within prescribed limits.

关键词： Maximum power point trackers Transient response Total harmonic distortion Power quality Power system harmonics Harmonic analysis voltage control MATLAB Sustainable development voltage-source converters

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Quantum dots solar cells: Materials innovation, device engineering, and emerging applications

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Materials Science in Semiconductor Processing 2025年 196卷

作者： Baskaran, S. Sree Rathna Lakshmi, N.v.S. Lakshmi Narayana, A. Arul Murugan, C. Department of Electronics and Communication Engineering SKP Engineering College Tamil Nadu Tiruvannamalai606 611 India Department of Electronics and Communication Engineering SRM Institute of Science and Technology Ramapuram Tamilnadu Chennai600 089 India Department of Electronics and Communication Engineering Aditya University Surampalem Andhra Pradesh 533 437 India Department of Electronics and Telecommunication Engineering Karpagam College of Engineering Tamil Nadu Coimbatore641 032 India

Quantum dot solar cells (QDSCs) have emerged as promising candidates for next-generation photovoltaic technologies owing to their unique optoelectronic properties and solution-processability. This critical review examines the evolution and current state of QDSC research spanning over two decades. We trace the progression from early theoretical concepts to recent experimental breakthroughs achieving power conversion efficiencies exceeding 18 % with perovskite quantum dots. The review systematically analyzes quantum confinement effects, materials development pathways, device architectures, and performance enhancement strategies. We critically assess three primary material systems: lead chalcogenides (PbS, PbSe, PbTe), which have demonstrated excellent spectral tunability and near-infrared harvesting;cadmium-based compounds (CdS, CdSe, CdTe), which provided the foundation for early developments;and perovskite quantum dots (CsPbI3, FAPbI3), which represent the current efficiency leaders. Surface engineering emerges as critical for performance, with sophisticated passivation and ligand exchange strategies driving remarkable efficiency improvements. We examine the transformative role of interface design in facilitating charge extraction while minimizing recombination, alongside notable innovations in flexible devices for emerging applications. While substantial challenges remain in stability, scalability, and environmental sustainability, recent progress in environmentally friendly alternatives, defect management, and transport layer optimization suggests pathways toward commercial viability. The review concludes by identifying promising research directions, including tandem integration, advanced characterization techniques, computational design, and machine learning-assisted discovery. This comprehensive analysis provides a framework for understanding quantum dot solar cells' position in the renewable energy landscape and outlines strategic pathways toward realizing thei

关键词： Sustainable development

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Proceedings of SPIE: current developments in Lens design and optical engineering III

Proceedings of SPIE: Current Developments in Lens Design and...

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current developments in Lens design and optical engineering III

This volume 4767 of the conference proceedings contains 19 papers. Topics discussed include optical system, optical sensors, optical materials, optical design and optical devices.

关键词： optical engineering

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optically-Controlled 3.3 kv SiC MOSFET with Fast Switching Speed and Low optical Power

Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching S...

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Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： Xin Yang Guannan Shi Liyang Jin Yuan Qin Matthew Porter Che-Wei Chang Xiaoting Jia Dong Dong Linbo Shao Yuhao Zhang Center for Power Electronics Systems (CPES) Virginia Tech Blacksburg USA Bradley Department of Electrical and Computer Engineering Virginia Tech Blacksburg USA Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong China

ISBN: (数字)9798331516116

ISBN: (纸本)9798331516123

optically-controlled high-voltage power devices hold good promise for grid and renewable energy applications by providing superior electromagnetic interference (EMI) immunity and reduced switching delay. This paper proposed a novel optically-controlled gate driver architecture that applies complementary optical signals to two photodiodes (PDs) arranged in a totem-pole configuration. This configuration enables fast switching of power semiconductor devices using minimal optical power, as only low-power driver signals are optically modulated and device main current is not photogenerated. To validate this approach, we employ two InGaAs PDs to drive a 3.3 kv SiC MOSFET, the highest-voltage industrial unipolar device currently available. When each PD is illuminated by 21.7 mW optical power, the SiC MOSFET achieves hard-switching at 1500v/3A, with rise and fall times of 152 ns and 214 ns, respectively. These results set new records for switching voltage, speed, and power capacity-to-optical power ratio in optically-controlled unipolar power switches. This general optical driver design is also applicable to the future development of integrated optics for power electronics in diverse (ultra-) wide-bandgap semiconductors. 1

关键词： Integrated optics MOSFET optical design Silicon carbide optical switches optical recording optical materials Ultrafast optics optical modulation optical devices

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Implementation of Digital Logic Gate Families Using Low Operating Flexible Organic TFT Based on Innovative Compact Modeling Approach

Implementation of Digital Logic Gate Families Using Low Oper...

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Industrial Electronics: developments & Applications (ICIDeA), IEEE International Conference on-

作者： Mukuljeet Singh Mehrolia Ashwini Kumar Mishra Rasveen Singh Surendra Yadav vijayakumar Devarakonda Abhishek Kumar Singh Department of Electrical and Electronics Engineering Rajiv Gandhi Institute of Petroleum Technology Amethi India Department of Electtonics and Commuication Engineering GLA University Mathura India Department of Electronics and Communication Engineering G.D. Goenka University Gurugram India School of Computing MIT Vishwaprayag University Solapur India Department of Electronics and Commuication Engineering Indian Institute of Information Technology Design and Manufacturing Kurnool India

ISBN: (数字)9798331533205

ISBN: (纸本)9798331533212

The article demonstrates the brief fabrication method of the flexible organic thin film transistor (OTFT) developed earlier and its utilization for the development of various basic logic gates (NAND, NOR, AND, NOT, and OR Gates). The compact modeling of the fabricated device and the implementation of the logic gates has been carried out using Silvaco-Techmodeler and Silvaco-Gateway tools, respectively. The device can operate at -2 v supply with good electrical characteristics in terms of $-2\mu \mathrm{A}$ drain current, $\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}\sim 10^{3}$ ‘ and $\mu_{p}\sim 0.1\text{cm}^{2}/\mathrm{v}-\sec$ respectively. The Silvaco-Gateway tool implements the logic gates with excellent characteristics, demonstrating logic swing of 1.18 v and a delay of 3.7 ns. The logic gates also possess a good transient characteristic with all four possible logic inputs (00, 01, 10, and 11). The Silvaco-Techmodeler tool models the device with an accuracy of approximately 100%, with a 0.07% and 0.08% error between the experimental and modeled data, respectively. The cost-efficiently fabricated solution-processed transistor in this article can be further utilized in the fields of medical and sensing applications.

关键词： Performance evaluation Low voltage Accuracy Logic gates Data models Organic thin film transistors Sensors Transistors Polymers Transient analysis

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current developments in optical design and optical engineering II

Current Developments in Optical Design and Optical Engineeri...

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current developments in optical design and optical engineering II

Proceedings incorporates 43 papers. These are arranged into six sessions dealing with the following major topics: assembly methods and materials for optical systems;advanced optical manufacturing and testing;optical d... 详细信息

ISBN: (纸本)0819409251

关键词： optical systems

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Analysis of Isolated Bi-Directional CLLC DC-DC Converters for Fast Electric-vehicle (Ev) Battery Charging

Analysis of Isolated Bi-Directional CLLC DC-DC Converters fo...

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Industrial Electronics: developments & Applications (ICIDeA), IEEE International Conference on-

作者： Dhirendra Kumar Mallick Sarat Chandra Swain Pradeep Kumar Sahu Satyaranjan Jena Suchismita Roy Ritesh Dash School of Electrical Engineering KIIT Deemed to be University Bhubaneswar India School of EEE REVA University Bangalore India

ISBN: (数字)9798331533205

ISBN: (纸本)9798331533212

Bidirectional onboard chargers play a vital role in electric vehicles (Evs), contributing to smart grid applications by enabling functions such as peak load management and supporting grid stability through frequency and voltage regulation. However, traditional full-bridge dual-active bridge (FBDAB) resonant converters commonly used in these systems face considerable efficiency losses, particularly during reverse power flow and when operating away from their resonant frequency-a condition often caused by fluctuations in battery voltage. To overcome these challenges, this paper presents a bidirectional battery charger based on a CLLC resonant converter with efficient tracking mechanism. The converter's steady-state behavior is analyzed under both grid-to-vehicle (G2v) charging and vehicle-to-grid (v2G) discharging conditions. By maintaining the switching frequency close to the ideal resonant point, this design successfully lowers circulating currents in the resonant tank and transformer, decrease losses in MOSFETs, and limits the rate of current change in the diodes. Simulations comparing this approach to a FBDAB resonant converter with fixed DC demonstrate the enhanced efficiency and superior performance of the proposed system.

关键词： Battery chargers vehicle-to-grid voltage fluctuations Resonant frequency Resonant converters Bidirectional control Zero voltage switching Batteries Zero current switching voltage control

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current developments in optical design and optical engineering III

Current Developments in Optical Design and Optical Engineeri...

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current developments in optical design and optical engineering III

The proceedings contains 44 papers. Some of the specific topics discussed are: multiple-temperature lens design optimization;engineering an agile beam director for laser radar;beam design of a noncooperative interfero... 详细信息

ISBN: (纸本)081941249X

关键词： optical systems

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Surface and subsurface characteristics of wire-electrical discharge machined Al-alloy and composite: a fundamental study on the role of machining variables

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Journal of Materials Research and Technology 2025年 36卷 9432-9461页

作者： Gaurav Anand Santanu Sardar Satesh Sah Ashim Guha Ibrahim Albaijan Debdulal Das Department of Mechanical Engineering Indian Institute of Engineering Science and Technology Shibpur Howrah 711103 West Bengal India Department of Metallurgy and Materials Engineering Indian Institute of Engineering Science and Technology Shibpur Howrah 711103 West Bengal India Department of Mechanical Engineering College of Engineering in Al-Kharj Prince Sattam Bin Abdulaziz University PO Box 655 Al-Kharj 16273 Saudi Arabia

For hard-to-machine materials like discontinuous particulate reinforced Al-matrix composites, wire-electrical discharge machining (wire-EDM) is increasingly preferred for manufacturing intricately shaped parts with high dimensional accuracies and surface finishes. The wire-EDM process involves a large number of machining variables apart from parameters associated with the workpiece, dielectric, and electrode; therefore, research on wire-EDM is often performed on the basis of the design of experiments , which is somewhat limited the fundamental understanding of the role of various influencing variables. The current experimental research reports the influences of major wire-EDM machining variables on the surface and subsurface characteristics of 20 vol% in-situ Al 3 Fe reinforced Al–2Mg alloy in reference to the unreinforced matrix alloy. The cutting velocity (Cv), kerf width (KW), surface roughness (SR), and surface chemistry (SC, = ΣO + Zn + Cu) of the composite and base alloy have been determined over a wide range of peak current (I P , 70–150 A), pulse-on time (T ON , 5–25 μs), pulse-off time (T OFF , 51–63 μs), servo voltage (S v , 40–80 v), wire feed rate (W FR , 6–10 m min −1 ) and wire tension (WT, 4–12 N), varying one parameter at a time and keeping all others constant at their mid-levels. The surface and subsurface of the wire-EDMed composite and alloy specimens have been extensively characterized employing FESEM coupled with EDS microanalyses, including the change in surface chemistry due to the in-situ oxidation and transfer of elements from the brass wire electrode, while a noncontact optical profilometer has been employed to determine the surface roughness. The Cv, KW, and SR are found to increase monotonically with increasing I P and T ON but decreasing T OFF, while the reverse trend has been observed for SC; these influences are more pronounced for base alloy over composite except for SR. Higher S v diminishes Cv and markedly raises SC; in contrast, en

关键词： Composite WEDM Machining performance Surface integrity Surface chemistry Surface roughness

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Improving the Performance of ZnO Nanorod Piezoelectric Nanogenerators by Tuning the PEDOT: PSS as an Intermediate Layer

Improving the Performance of ZnO Nanorod Piezoelectric Nanog...

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International Laser Technology and Optics Symposium 2024, iLATOS2024

作者： Asmarita, Yulmaisi Dwi Fadhullah, Naufal Fiego Mufti, Nandang Pujiarti, Herlin Paradita, Dhea Kurniawan, Robi Salim, Ali Aqeel Ismail, Hasan Department of Physics Faculty of Mathematics and Natural Sciences Universitas Negeri Malang Malang65145 Indonesia Center of Advanced Material for Renewable Energy Universitas Negeri Malang Malang65145 Indonesia Universiti Teknologi Malaysia Johor Johor Bahru81310 Malaysia Department of Mechanical Engineering Universitas Negeri Malang Malang65145 Indonesia

The coating design of a piezoelectric nanogenerator (PENG) was optimised to enhance the performance of ZnO nanorod-based PENGs by fine-tuning the PEDOT: PSS intermediate layer. ZnO nanorods were synthesised using the hydrothermal method at 90°C for 5 hours. The PEDOT: PSS layer was deposited via spin coating at rotation speeds (2000-5000 rpm). Furthermore, PDMS and Cu material layers were deposited using spin coating and magnetron sputtering, respectively, ensuring optimal layer characteristics for improved energy harvesting efficiency. The PENGs were fabricated with a material structure of ITO-PET/ZnO/PEDOT: PSS/PDMS/Cu. various characterization tools including XRD, SEM, Uv-vis, and voltage-current (I-v) measurements were used to determine the materials’ structural, surface morphological, optical properties and their impact on PENG performance. The XRD diffraction patterns of ZnO nanorods coated with PEDOT: PSS revealed a hexagonal wurtzite crystal structure and amorphous phase with a lattice fringe of ~0.52 nm and a crystal size of ~67.91 nm. SEM analysis determined that the average diameter of ZnO nanorod was 67.2 ± 0.48 nm with a thickness of 1297 ± 29.22 nm. The absorption spectra of ZnO/PEDOT: PSS layers were observed in the range of 260-380 nm with an energy bandgap of 3.28 to 3.13 nm, indicating that a thicker PEDOT: PSS layer, resulted in a smaller bandgap with higher PENG conductivity at 8.97 Watt. © 2025 Institute of Physics Publishing. All rights reserved.

关键词： Spin coating

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