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arXiv 2021年

作者： Aiello, S. Albert, A. Alshamsi, M. Alves Garre, S. Aly, Z. Ambrosone, A. Ameli, F. Andre, M. Androulakis, G. Anghinolfi, M. Anguita, M. Ardid, M. Ardid, S. Aublin, J. Bagatelas, C. Baret, B. Basegmez du Pree, S. Bendahman, M. Benfenati, F. Berbee, E. van den Berg, A.M. Bertin, v. Biagi, S. Boettcher, M. Bou Cabo, M. Boumaaza, J. Bouta, M. Bouwhuis, M. Bozza, C. Brânzaş, H. Bruijn, R. Brunner, J. Bruno, R. Buis, E. Buompane, R. Busto, J. Caiffi, B. Calvo, D. Campion, S. Capone, A. Carretero, v. Castaldi, P. Celli, S. Chabab, M. Chau, N. Chen, A. Cherubini, S. Chiarella, v. Chiarusi, T. Circella, M. Cocimano, R. Coelho, J.A.B. Coleiro, A. Colomer Molla, M. Coniglione, R. Coyle, P. Creusot, A. Cruz, A. Cuttone, G. Dallier, R. de Martino, B. Di Palma, I. Díaz, A.F. Diego-Tortosa, D. Distefano, C. Domi, A. Donzaud, C. Dornic, D. Dörr, M. Drouhin, D. Eberl, T. Eddyamoui, A. van Eeden, T. van Eijk, D. El Bojaddaini, I. El Hedri, S. Enzenhöfer, A. Espinosa, v. Fermani, P. Ferrara, G. Filipović, M.D. Filippini, F. Fusco, L.A. Gal, T. García Méndez, J. Garcia Soto, A. Garufi, F. Gatelet, Y. Gatius Oliver, C. Geißelbrecht, N. Gialanella, L. Giorgio, E. Gozzini, S.R. Gracia, R. Graf, K. Grella, G. Guderian, D. Guidi, C. Guillon, B. Gutiérrez, M. Haefner, J. Hallmann, S. Hamdaoui, H. van Haren, H. Heijboer, A. Hekalo, A. Hennig, L. Hernández-Rey, J.J. Hofestädt, J. Huang, F. Idrissi Ibnsalih, W. Illuminati, G. James, C.W. Janezashvili, D. de Jong, M. de Jong, P. Jung, B.J. Kalaczynski, P. Kalekin, O. Katz, U.F. Khan Chowdhury, N.R. Kistauri, G. van der Knaap, F. Kooijman, P. Kouchner, A. Kulikovskiy, v. Labalme, M. Lahmann, R. Lamoureux, M. Larosa, G. Lastoria, C. Lazo, A. Le Breton, R. Le Stum, S. Lehaut, G. Leonardi, O. Leone, F. Leonora, E. Lessing, N. Levi, G. Lincetto, Massimiliano Lindsey Clark, M. Lipreau, T. LLorens Alvarez, C. Longhitano, F. Lopez-Coto, D. Maderer, L. Majumdar, J. Manczak, J. Margiotta, A. Marinelli, A. Markou, C. INFN Sezione di Catania Via Santa Sofia 64 Catania95123 Italy Université de Strasbourg CNRS IPHC UMR 7178 StrasbourgF-67000 France Université de Paris CNRS Astroparticule et Cosmologie ParisF-75013 France c/Catedrático José Beltrán 2 Valencia Paterna46980 Spain Aix Marseille Univ CNRS/IN2P3 CPPM Marseille France INFN Sezione di Napoli Complesso Universitario di Monte S. Angelo Via Cintia ed. G Napoli80126 Italy Università di Napoli "Federico II" Dip. Scienze Fisiche "E. Pancini" Complesso Universitario di Monte S. Angelo Via Cintia ed. G Napoli80126 Italy INFN Sezione di Roma Piazzale Aldo Moro 2 Roma00185 Italy Universitat Politècnica de Catalunya Laboratori d’Aplicacions Bioacústiques Centre Tecnològic de Vilanova i la Geltrú Avda. Rambla Exposició s/n Vilanova i la Geltrú 08800 Spain NCSR Demokritos Institute of Nuclear and Particle Physics Ag. Paraskevi Attikis Athens 15310 Greece INFN Sezione di Genova Via Dodecaneso 33 Genova16146 Italy University of Granada Dept. of Computer Architecture and Technology/CITIC Granada18071 Spain Universitat Politècnica de València Instituto de Investigación para la Gestión Integrada de las Zonas Costeras C/ Paranimf 1 Gandia46730 Spain Nikhef National Institute for Subatomic Physics PO Box 41882 Amsterdam1009 DB Netherlands University Mohammed V in Rabat Faculty of Sciences 4 av. Ibn Battouta B.P. 1014 R.P Rabat10000 Morocco INFN Sezione di Bologna v.le C. Berti-Pichat 6/2 Bologna40127 Italy Università di Bologna Dipartimento di Fisica e Astronomia v.le C. Berti-Pichat 6/2 Bologna40127 Italy KVI-CART University of Groningen Groningen Netherlands INFN Laboratori Nazionali del Sud Via S. Sofia 62 Catania95123 Italy North-West University Centre for Space Research Private Bag X6001 Potchefstroom2520 South Africa Instituto Español de Oceanografía Unidad Mixta IEO-UPV C/ Paranimf 1 Gandia46730 Spain University Mohammed I Faculty of Sciences BV Mohammed VI B.P. 717 R

The KM3NeT research infrastructure is under construction in the Mediterranean Sea. KM3NeT will study atmospheric and astrophysical neutrinos with two multi-purpose neutrino detectors, ARCA and ORCA, primarily aimed at Gev–Pev neutrinos. Thanks to the multi-photomultiplier tube design of the digital optical modules, KM3NeT is capable of detecting the neutrino burst from a Galactic or near-Galactic core-collapse supernova. This potential is already exploitable with the first detection units deployed in the sea. This paper describes the real-time implementation of the supernova neutrino search, operating on the two KM3NeT detectors since the first months of 2019. A quasi-online astronomy analysis is introduced to study the time profile of the detected neutrinos for especially significant events. The mechanism of generation and distribution of alerts, as well as the integration into the SNEWS and SNEWS 2.0 global alert systems are described. The approach for the follow-up of external alerts with a search for a neutrino excess in the archival data is defined. Finally, an overview of the current detector capabilities and a report after the first two years of operation are given. Copyright © 2021, The Authors. All rights reserved.

关键词： Neutrons

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高灵敏度的量子效应探测器的建模和微光探测

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微纳电子技术 2019年第4期56卷 263-268页

作者：梁孔科王明甲青岛工学院信息工程学院山东青岛266300 青岛科技大学自动化与电子工程学院山东青岛266000

针对新型量子点-量子阱光电探测器在不同的辐照功率和器件偏压下的电特性测试,采用曲线拟合的方法,得到不同辐照光功率下的I-v、C-v之间的函数关系,应用verilog-A语言建立等效电路模型,然后利用电路模拟软件进行验证,为读出电路的设计... 详细信息

针对新型量子点-量子阱光电探测器在不同的辐照功率和器件偏压下的电特性测试,采用曲线拟合的方法,得到不同辐照光功率下的I-v、C-v之间的函数关系,应用verilog-A语言建立等效电路模型,然后利用电路模拟软件进行验证,为读出电路的设计提供准确的便于和读出电路一起模拟仿真的探测器模型。针对这种探测器低温下具有的暗电流小、灵敏度高、光电转换效率高等优点,设计了电容反馈互阻放大器(CTIA)和相关双采样(CDS)结构的读出电路。芯片集成后和2×8阵列的量子效应探测器封装在陶瓷基板上,低温下(77 K)采用633 nm He-Ne激光聚焦照射探测器,测试得到探测器的微光响应电压。实验结果表明,当器件在50 pW光功率、29.3μs的积分时间、偏压约-3.1 v时,读出电路与探测器对接后12个像元有响应电压;增大光功率至500 pW时,16个像元都有响应;读出电路与探测器对接后平均响应电压为18 mv,平均电压响应率达到3.6×107 v/W。

关键词：微光探测读出电路量子点电容反馈互阻放大器(CTIA) 相关双采样(CDS)

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vertical cavity surface emitting laser of 1.55 μm spectral range, manufactured by molecular beam epitaxy and wafer fusion technique

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Journal of Physics: Conference Series 2020年第1期1697卷

作者： S A Blokhin M A Bobrov N A Maleev A A Blokhin A P vasyl'ev A G Kuzmenkov S I Troshkov v M Ustinov S S Rochas A G Gladyshev I I Novikov L Ya Karachinsky K O voropaev A S Ionov A Yu Egorov Ioffe Institute St. Petersburg 194021 Russia Research and Engineering Center for Submicron Heterostructures for Microelectronics St. Petersburg 194021 Russia ITMO University St. Petersburg 197101 Russia Connector Optics LLC St. Petersburg 194292 Russia OKB-Planeta PLC Veliky Novgorod 173004 Russia

The heterostructure design for 1.55 μm range vCSELs is proposed and realized. The wafer fusion technique was used to form the final heterostructure. The growth of AlGaAs/GaAs distributed Bragg reflectors (DBRs) on GaAs substrate and the optical cavity with an active region on InP substrate as well as a tunnel junction (TJ) regrowth was performed by molecular beam epitaxy (MBE). A key feature of the proposed design is the use of n++-InGaAs/p++-InGaAs/p++-InAlGaAs TJ, which allows, due to the effective removal of oxide from the InGaAs surface, to use MBE for re-growth of the TJ surface relief. Despite of the presence in heterostructure a narrow-gap InGaAs layers, a noticeable increase in internal optical loss in lasers can be avoided due to the short-wavelength shift of the edge of interband light absorption in ++-InGaAs layers (Burshtein-Moss effect). Fabricated vCSELs demonstrate single-mode operation with a threshold current less than 2 mA and a slope efficiency of ~ 0.46 W/A, which are comparable with characteristics of vCSELs with n++/p++-InAlGaAs TJ with a similar level of mirror losses.

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Integrated Waveguide Photodetectors with Butt and Evanescent Coupling

Integrated Waveguide Photodetectors with Butt and Evanescent...

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Iranian Conference on Electrical engineering (ICEE)

作者： Amir Hossein Mehrfar Morteza Fathipour Department of Electrical Engineering Islamic Azad University Tehran Iran Department of Electrical University of Tehran Tehran Iran

In this paper we report on the design of an integrated waveguide photodetector designed for use in an integrated optical gyroscope with high responsivity and wide bandwidth. The butt and evanescent coupling are two common schemes for the coupling between the waveguide and the photodetector. The butt and evanescent coupling are compared, and a process flow for fabrication of such device is described. At a reverse voltage bias of -1 v, a responsivity higher than 0.6 A/W and 0.5 A/W were obtained for the butt and evanescent coupling respectively, the 3dB cut-off frequency and dark current were 55 GHz and 10 nA for both schemes.

关键词： Photodetectors Couplings Germanium optical waveguides Silicon Dark current Bandwidth

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Role of Process Parameters on Bead geometry and Metallurgical Characteristics in autogenous Gas Tungsten Arc Welding of Maraging Steels (250 grade)

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Materials Today: Proceedings 2018年第2期5卷 7640-7649页

作者： v. Rajkumar R. Immanual N. Sivashanmugam S.P. Kumaresh Babu N. Arivazhagan Department of Mechanical Engineering Sri Ramakrishna Institute of Technology Coimbatore India Department of Mechanical Engineering National Institute of Technology Trichy India Department of Metallurgical &Materials Engineering National Institute of Technology Trichy India School of Mechanical Engineering VIT University Vellore India

This research aims to characterize the bead geometry, metallurgical aspects of the optimized maraging steel (250 grade) weld track processed by autogenous gas tungsten arc welding technique. design of experiments was used to determine the weld track possessing optimal bead geometry. Welding speed and current were the parameters considered for optimization. Depth of penetration and bead width were the adjudicating parameters for optimality. Taguchi analysis showed that welding current is directly proportional to depth and width whereas weld speed was indirectly proportional. Statistical analysis indicated that welding speed has affected the depth of penetration and different current levels have affected the width of the weld bead linearly. optical microscopy and SEM/EDAX analysis were done to investigate the post weld microstructural changes. X-Ray Diffraction were done to understand the phase formations.

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Developing of EOS Model with Elliptical Beams for THz Devices

Developing of EOS Model with Elliptical Beams for THz Device...

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International Conference on Actual Problems of Electron Devices engineering, (APEDE)

作者： I.A. Navrotsky A.A. Burtsev A.v. Danilushkin T.A. Karetnikova N.M. Ryskin K.v. Shumikhin JSC «SPE “Almaz”» Saratov Saratov Branch of Kotelnikov Institute of Radioengineering and Electronics of RAS

This report presents a design of an electron-optical system (EOS) with triple electron elliptical beams. A current of each beam is 31 mA and a dimension is 300×600 ¼m 2 . A magnetic field of 0,55 T is used for focusing of electron beams. A technology of fabrication and assembly of a model of EOS that contains a dispenser cathode, anode, collector and magnetic system is presented. In the course of experimental investigation of a model in impulse mode total current of 93 mA was obtained at cathode temperature of 1100°C and grid potential 900-1000 v. The realized design of a model with elliptical beams demonstrates the feasibility of creating of THz TWT on the basis of a similar EOS.

关键词： Earth Observing System Conferences Cathodes vacuum electronics Electron beam applications Magnetic fields

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design and performance evaluations with optical comparator link

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engineering SCIENCE AND TECHNOLOGY-AN INTERNATIONAL JOURNAL-JESTECH 2017年第1期20卷 89-94页

作者： Tripathi, Devendra Kr. SIET Allahabad Dept Elect & Commun Allahabad 211012 Uttar Pradesh India

This article presents performance investigation of the proposed high speed optical comparator network. Execution for inputs data A and data B, the equivalence (A = B), less than (A < B) and greater than (A > B) operations have been realized through separate branches accompanying semiconductor optical amplifier. By exploiting nonlinear attribute the cross gain modulation with semiconductor optical amplifier. Accordingly, output logic patterns have been verified at 20 Gbps data rate for different input permutations with good Q-factor performance. Numerical investigation for key design parameters have been appropriately demonstrated with good extinction ratio (> 10 dB) performance for the variation of data rates (2-20 Gbps), laser power, pump current and modulator bias voltage (0.72 v). This exploration inferred that projected schematic could be one of competent scheme for upcoming all-optical computing operations, as it excludes expensive optoelectronic translation. (C) 2016 Karabuk University. Publishing services by Elsevier B.v. This is an open access article under the CC BY-NC-ND license (http://***/licenses/by-nc-nd/4.0/).

关键词： Amplified spontaneous emission (ASE) optical communication networks (OCN) Extinction ratio(ER) Cross gain modulation (XGM) Fiber optic communication multiplexing [FOCM]

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InP-Based Generic Foundry Platform for Photonic Integrated Circuits

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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2018年第1期24卷

作者： Augustin, Luc M. Santos, Rui den Haan, Erik Kleijn, Steven Thijs, Peter J. A. Latkowski, Sylwester Zhao, Dan Yao, Weiming Bolk, Jeroen Ambrosius, Huub Mingaleev, Sergei Richter, Andre Bakker, Arjen Korthorst, Twan SMART Photon NL-5612 AX Eindhoven Netherlands Eindhoven Univ Technol Inst Photon Integrat NL-5612 AZ Eindhoven Netherlands VPI Photon D-10587 Berlin Germany PhoeniX Software NL-7521 PL Enschede Netherlands

The standardization of photonic integration processes for InP has led to versatile and easily accessible generic integration platforms. The generic integration platforms enable the realization of a broad range of applications and lead to a dramatic cost reduction in the development costs of photonic integrated circuits (PICs). This paper addresses the SMART Photonics generic integration platform developments. The integration technology based on butt joint active-passive epitaxy is shown to achieve a platform without compromising the performance of the different components. The individual components or building blocks are described. A process design kit is established with a comprehensive dataset of simulation and layout information for the building blocks. Latest results on process development and optimization are demonstrated. A big step forward is achieved by applying high-resolution ArF lithography, which leads to increased performance for AWGs and a large increase in reproducibility and yield. The generic nature of the platform is demonstrated by analyzing a number of commercial multiproject wafer runs. It is clear that a large variety of applications is addressed with more than 200 designs from industry as well as academia. A number of examples of PICs are displayed to support this. Finally, the design flow is explained, with focus on layout-aware schematic-driven design flow that is required for complex circuits. It can be concluded that generic integration on InP is maturing fast and with the current developments and infrastructure it is the technology of choice for low cost, densely integrated PICs, ready for high-volume manufacturing.

关键词： Photonic integrated circuits microwave photonics silicon photonics semiconductor optical amplifiers quantum well lasers photodiodes III-v semiconductor materials

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RMs1: The state of the art SWaP cryocooler 3

RMs1: The state of the art SWaP cryocooler

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Tri-Technology Device Refrigeration (TTDR) III 2018

作者： vasse, Christophe Seguineau, Cédric Martin, Jean-Yves van-Acker, Sébastien Sacau, Mikel Le Bordays, Julien Etchanchu, Thierry Abadie, Christian Chaumeau, Sylvain Benschop, Tonny Thales LAS France S.A.S 4 Rue Marcel Doret BP70022 BlagnacF-31701 France Hales Cryogenics B.V. Hooge Zijde 14 EindhovenDC5626 Netherlands

ISBN: (数字)9781510617643

ISBN: (纸本)9781510617636

For five years, Thales Cryogenics has led a new development cycle in order to design and deliver a new generation of SWaP cryocoolers. Both linear and rotary Stirling coolers have been developed. SWaP coolers are especially designed to cool the emerging High Operating Temperature IR detector (HOT). Insofar as optimal detector performance for HOT technologies are still challenging, Thales forced himself to develop a rotary cooler that can cool detector at intermediate cold temperatures, ie. 90 to 140K, even if the optimal performances are reached for 150K. A first demonstrator was shown during the SPIE DS 2015 exhibition. That prototype was useful to investigate technologies to be introduced in order to drastically improve the compactness and the weight. Both aspects were reduced by 50% compared to a legacy RM2. The achieved compactness was identified as an optimal trade-off between mass and volume versus the associated production costs. Last year, Thales worked on new prototypes of the RMs1 SWaP rotary cooler. That product is the results of the previous RT and design phases, on one hand, and the adoption of generic standards on interfaces like the cold finger in order to simplify integration-and thus reduce overall cost-by our customers on the other hand. Associated performances were presented and commented. The current paper is focused on the qualification results obtained at the end of 2017. Especially, the available cooling power versus the cold temperature will be shared, next to other important key cryogenics performances such as the cool down time for dedicated detectors, characterized by a thermal masses and operational temperatures. Moreover, a particular effort has been made on other "soft" performances, in order to greatly improve the user experience, that is to say noise and induced vibrations. At last, first lifetime figures for the RMs1 are also presented and commented. As a conclusion, the compliance of the RMs1 performances with expectations for HOT I

关键词： Infrared detectors

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design considerations for λ ∼ 3.0-to 3.5-μm-emitting quantum cascade lasers on metamorphic buffer layers

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optical engineering 2018年第1期57卷 011017-011017页

作者： Rajeev, Ayushi Sigler, Chris Earles, Tom Flores, Yuri v. Mawst, Luke J. Botez, Dan Univ Wisconsin Madison Dept Elect & Comp Engn Madison WI 53706 USA Intraband LLC Madison WI USA MIT Elect Res Lab Cambridge MA 02139 USA

Quantum cascade lasers (QCLs) that employ metamorphic buffer layers as substrates of variable lattice constant have been designed for emission in the 3.0-to 3.5-mu m wavelength range. Theoretical analysis of the active-region (AR) energy band structure, while using an 8-band k.p model, reveals that one can achieve both effective carrier-leakage suppression as well as fast carrier extraction in QCL structures of relatively low strain. Significantly lower indium-content quantum wells (QWs) can be employed for the AR compared to QWs employed for conventional short-wavelength QCL structures grown on InP, which, in turn, is expected to eliminate carrier leakage to indirect-gap valleys (X, L). An analysis of thermo-optical characteristics for the complete device design indicates that high-Al-content AlInAs cladding layers are more effective for both optical confinement and thermal dissipation than InGaP cladding layers. An electroluminescence-spectrum full-width half-maximum linewidth of 54.6 mev is estimated from interface roughness scattering and, by considering both inelastic and elastic scattering, the threshold-current density for 3.39-mu m-emitting, 3-mm-long back-facet-coated QCLs is projected to be 1.40 kA/cm(2). (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License.

关键词： quantum cascade laser metamorphic buffer layer semiconductor laser metalorganic chemical vapor deposition

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