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arXiv 2023年

作者： Li, Xintong Zhou, Peng Hu, Xuan Rivers, Ethan Watanabe, Kenji Taniguchi, Takashi Akinwande, Deji Friedman, Joseph S. Incorvia, Jean Anne C. Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States Department of Electrical and Computer Engineering The University of Texas at Dallas RichardsonTX75080-3021 United States Research Center for Electronic and Optical Materials National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan Research Center for Materials Nanoarchitectonics National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan

Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed off-state current. These circuits achieve the same logical output as CMOS with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on-off ratio of 108and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. For the first time, we demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and polarity gate behavior is conducted, which has previously been lacking. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices are qualitatively analyzed. This work lays the foundation for future developments in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed and more flexible logic circuits. © 2023, CC BY.

关键词： Logic gates

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Optimizing the design of FT-IR spectroscopic imaging instruments to obtain increased spatial resolution of chemical species

Optimizing the design of FT-IR spectroscopic imaging instrum...

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IEEE International Symposium on Biomedical Imaging

作者： R. Reddy D. Mayerich M. Walsh M. Schulmerich P. S. Carney R. Bhargava Department of Bioengineering University of Illinois Urbana-Champaign USA Beckman Institute for Advanced Science and Technology UIUC USA Beckman Institute for Advanced Science and Technology Department of Electrical and Computer Engineering UIUC USA Cancer Center University of Illinois USA

Fourier transform infrared (FT-IR) spectroscopic imaging provides spatially resolved chemical information. Recent developments have shown that this chemical information can be used to determine tissue cell types. Our goal is then to use the spatial distribution of tissue cell types to perform accurate diagnosis of cancer. However, this step is limited by the spatial resolution provided by current imaging systems. In this paper, we demonstrate that these instruments can be designed to provide better spatial resolution for tissue chemistry. We present an optical model for the propagation of light through an FT-IR spectroscopic imaging system. Using this model, we minimally modify an existing FT-IR spectroscopic imaging system to obtain significantly higher resolution and image quality. We demonstrate that it is possible to identify previously obscured tissue types by performing histological classification based on bio-chemically derived spectral features (metrics).

关键词： Imaging Chemicals Instruments Spatial resolution Cancer Detectors

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丝素蛋白纤维及功能化材料的设计与构筑

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高分子学报 2021年第1期52卷 29-46,I0003,I0001页

作者：范苏娜陈杰顾张弘姚响张耀鹏东华大学纤维材料改性国家重点实验室材料科学与工程学院上海201620

随着环境污染、资源枯竭和医疗健康等问题的加剧,研发同时满足特定使用性能、安全性及可再生性的新型材料成为当前的发展趋势.而丝素蛋白材料正是以天然蚕丝为基本原材料,经一定的加工和功能化而形成的具有特殊结构、独特性能和广泛应... 详细信息

随着环境污染、资源枯竭和医疗健康等问题的加剧,研发同时满足特定使用性能、安全性及可再生性的新型材料成为当前的发展趋势.而丝素蛋白材料正是以天然蚕丝为基本原材料,经一定的加工和功能化而形成的具有特殊结构、独特性能和广泛应用的生物质材料,近年来在生物医药、生物电子、智能传感等领域展现出巨大的应用潜力.本专论总结了丝素蛋白纤维及功能化材料的最新成果,结合本课题组相关工作,重点阐述了再生丝素蛋白纤维的仿生制备、生物医用支架的构筑与功能化、智能电子材料的设计以及天然多功能蚕丝及其构筑基元制备的研究进展,以期为高性能丝素蛋白材料的设计与构筑提供指导和借鉴.

关键词：丝素蛋白多级结构功能材料仿生构筑

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designing for Degradation: Transient Devices Enabled by (Nano)Cellulose

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ADVANCED MATERIALS 2024年第0期 e2401560页

作者： Andrew, Lucas J. Lizundia, Erlantz MacLachlan, Mark J. Univ British Columbia Dept Chem 2036 Main Mall Vancouver BC V6T 1Z1 Canada Univ Basque Country UPV EHU Fac Engn Bilbao Dept Graph Design & Engn Projects Life Cycle Thinking Grp Bilbao 48013 Spain Basque Ctr Mat Applicat & Nanostruct BCMaterials UPV EHU Sci Pk Leioa 48940 Spain Univ British Columbia Stewart Blusson Quantum Matter Inst 2355 East Mall Vancouver BC V6T 1Z4 Canada Kanazawa Univ WPI Nano Life Sci Inst Kanazawa 9201192 Japan UBC BioProd Inst 2385 East Mall Vancouver BC V6T 1Z4 Canada

Transient technology involves materials and devices that undergo controlled degradation after a reliable operation period. This groundbreaking strategy offers significant advantages over conventional devices based on non-renewable materials by limiting environmental exposure to potentially hazardous components after disposal, and by increasing material circularity. As the most abundant naturally occurring polymer on Earth, cellulose is an attractive material for this purpose. Besides, (nano)celluloses are inherently biodegradable and have competitive mechanical, optical, thermal, and ionic conductivity properties that can be exploited to develop sustainable devices and avoid the end-of-life issues associated with conventional systems. Despite its potential, few efforts have been made to review current advances in cellulose-based transient technology. Therefore, this review catalogs the state-of-the-art developments in transient devices enabled by cellulosic materials. To provide a wide perspective, the various degradation mechanisms involved in cellulosic transient devices are introduced. The advanced capabilities of transient cellulosic systems in sensing, photonics, energy storage, electronics, and biomedicine are also highlighted. current bottlenecks toward successful implementation are discussed, with material circularity and environmental impact metrics at the center. It is believed that this review will serve as a valuable resource for the proliferation of cellulose-based transient technology and its implementation into fully integrated, circular, and environmentally sustainable devices. Recent progress in transient devices enabled by (nano)cellulosic materials is reviewed. Transiency mechanisms, advantages of nanocelluloses, and a suite of applications are discussed. A circular thinking approach coupled with life cycle assessment is applied to critically revisit the potential, advantages, and challenges of nanocellulose-enabled transient devices for future ma

关键词： biodegradable circular economy nanocellulose sustainability transiency

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Lens blocking method for OPTICAM

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Precision engineering 1993年第3期15卷 205-205页

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High efficiency amorphous silicon superlattice solar cells

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WSEAS Transactions on Electronics 2006年第5期3卷 281-287页

作者： Varonides, Argyrios C. Department of Phsyics and Electrical Engineering University of Scranton Scranton PA 18510 United States

High efficiency solar cells seem to be the main direction of current research these days, in spite the high cost of fabrication. Production costs of highly effective solar cells are still very high, and thus amorphous silicon is still the only semiconductor material available for cheap and effective solar cells. On the other hand, amorphous silicon-based alloys have not been incorporated sufficiently by the industry, in spite the fact that they might provide advantages of more than one gap and wider optical window for incident wavelengths. Amorphous silicon/alloy superlattices provide advantages in solar cell design, such as (a) effective band-gap widening (b) effective mass separation (c) increased open-circuit voltage. The latter increases via Fermi level control, due to p-doping of potential barriers, pushing EF towards the valence bands, with simultaneous widening of the effective band gap, thus leading to potentially higher collection incident wavelengths. The density of gap states in the heavily doped layer is modeled as an exponential whose parameter kT* can be varied by the doping concentrations, while its activation energy saturates at some value. This communication provides (i) a general formulation of the problem at finite temperatures as well as numerical results for specific realizable contacts (ii) detailed treatment of gap states (iii) the neutrality condition (iv) a relation between Fermi level position and open-circuit voltage in the nitride region (superlattice p-region). For a p-(a-SiN: H/a-Si: H)-i (a-Si: H)-n (a-Si: H) sample, we compute the Fermi level position relative to the a-Si: H valence band edge. For low and wide gap thin layers of the order of 2.5 to 3.5 nm, open circuit voltage values are predicted in excess of 1.05 V, and efficiencies are predicted in excess of 12%.

关键词： Solar cells

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Nondiffracting pulses in anisotropic materials

Nondiffracting pulses in anisotropic materials

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IEEE Symposium (IUS) Ultrasonics

作者： J. Salo J. Fagerholm A.T. Friberg M.M. Salomaa Materials Physics Laboratory Department of Engineering Physics and Mathematics Helsinki University of Technology Finland Center for Scientific Computing Limited Espoo Finland Department of Physics II-Optics Royal Institute of Technology Stockholm Sweden

Various localized electromagnetic and acoustic waves, nondiffracting fields, and other directed-radiation beams are of great current interest. The authors present a new category of nondiffracting acoustic waves that propagate in either isotropic or anisotropic solid media. The nondiffracting pulses are spectral generalisations of the monochromatic conical waves, a property which provides novel insight into the physical analysis and the actual preparation of such localized space-time fields. The nondiffracting pulses obtained via the space-frequency synthesis of nondiffracting conical waves are illustrated with the help of broadband X-like waves for which explicit expressions are derived. The relation of these fields to the previously known localized solutions is established. The nondiffracting acoustic pulses in anisotropic substrates offer several new design opportunities in various applications.

关键词： Anisotropic magnetoresistance Acoustic waves Acoustic pulses Solids Physics Partial differential equations optical materials Electromagnetic radiation Acoustic beams Acoustic propagation

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基于主动加热方法的隧道积水分布式光纤传感器

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激光与红外 2024年第3期54卷 473-480页

作者：方忠强王皓宇胡慧江张坤任康张丹水下隧道智能设计、建造与养护技术与装备交通运输行业研发中心(华设设计集团股份有限公司) 江苏南京210014 南京大学地球科学与工程学院江苏南京210023

针对目前隧道积水事件及积水范围监测需求,研发了两种新型隧道积水传感器,提出了基于分布式温度传感(DTS)的隧道积水分布式感测方法。通过将传感光缆按二维平面螺旋封装方式提高了传感器的空间分辨率,利用主动加热方法,显著提高了水-气... 详细信息

针对目前隧道积水事件及积水范围监测需求,研发了两种新型隧道积水传感器,提出了基于分布式温度传感(DTS)的隧道积水分布式感测方法。通过将传感光缆按二维平面螺旋封装方式提高了传感器的空间分辨率,利用主动加热方法,显著提高了水-气界面传感光缆的温度差异,进而实现对积水事件和积水范围的识别。通过室内模型试验,对传感光缆的性能及影响因素进行了研究。结果表明,研发的两种传感器均具有较高的空间分辨率,由于螺旋Ⅰ型的环间距更小,其空间分辨率及定位精度均高于螺旋Ⅱ型;在多种典型工况下两种传感器均可以准确识别积水的水-气界面,定位误差均小于10cm;适当增大加热温度可以提高传感器的定位精度,50℃加热工况时的定位精度明显优于35℃和20℃。

关键词：隧道积水 DTS 光纤传感主动加热方法

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Device engineering of p-CuAlO2/0-Ga2O3 interface: A staggered-gap band-alignment

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MATERIALS TODAY ADVANCES 2023年 19卷

作者： Prasad, Chowdam Venkata Labed, Madani Shaikh, Mohammad Tauquir Alam Shamim Min, Ji Young Nguyen, Tan Hoang Vu Song, Wonjin Park, Jang Hyeok Kim, Kyong Jae Kim, Sangmo Kyoung, Sinsu Sengouga, Nouredine Rim, You Seung Sejong Univ Dept Intelligent Mechatron Engn & Convergence Engn Seoul 05006 South Korea Sejong Univ Dept Semicond Syst Engn Seoul 05006 South Korea Sejong Univ Inst Semicond & Syst IC Seoul 05006 South Korea PowerCubeSemi Inc Res & Dev 686 Cheonggyesan Ro Seongnam Si 13105 Gyeonggi Do South Korea Univ Biskra Lab Semiconducting & Met Mat LMSM Biskra 07000 Algeria

In this work, by controlling the oxygen flow rate (OFR) (from 0% to 30%), we suggest using a p-type copper aluminum oxide (p-CuAlO2) interlayer to enhance the high breakdown and low leakage current for 0-Ga2O3-based power device applications. Results of AFM measurements on p-CuAlO2 films per-formed using various OFRs demonstrate that greater OFRs result in an increase in film roughness payable to the unavoidable leading of defects/oxygen vacancy (VO). We used XPS and TEM analysis to validate the surface elemental compositions, chemical states, band offsets and microstructural properties of p-CuAlO2/0-Ga2O3 heterojunction (HJ) with different OFRs. With increasing OFR from 0% to 17.6%, the VBO and CBO values of HJ were decreased from 1.73 eV to 1.23 eV and from 0.53 eV to 0.38 eV respectively. Then, with increasing OFR from 17.6% to 30%, VBO was decreased from 1.23 eV to 1.13 eV while CBO increased from 0.38 eV to 0.58 eV. The staggered-gap (type-ii) across the p-CuAlO2/0-Ga2O3 HJ is identified the entire OFRs. The rising tendency of optical bandgap (Eg) of p-CuAlO2 with range of OFRs, a maximum Eg of 4.35 eV was obtained with OFR of 30%. Furthermore, the electrical and carrier transport properties of p-CuAlO2/0-Ga2O3 HJ were studied using I-V and C-V techniques. The reverse breakdown voltage (Vbr) of HJ is strongly dependent on OFRs. With increasing OFRs, Vbr was decreased from 937 V to 924 V, and then to 1000 V with increasing OFR from 0% to 17.6% and then to 30%. In addition, a decrease in the interface state density (NSS) with increasing OFRs was observed which indicates that oxygen may be an effective surface passivation. Analysis confirmed that Poole-Frenkel emission dominates the reverse leakage current of all the HJ samples. The type-ii p-CuAlO2/0-Ga2O3 HJ may facilitate the design and manufacture of high-performance 0-Ga2O3-based heterojunctions and advance optoelectronic devices. & COPY;2023 Published by Elsevier Ltd. This is an open access article under the

关键词： p-CuAlO2 Heterojunction On-resistance Breakdown voltage

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Mid Infrared Focal Plane Arrays with Nanoscale Quantum Dots and Superlattices

Mid Infrared Focal Plane Arrays with Nanoscale Quantum Dots ...

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IEEE Conference on Nanotechnology

作者： S. Krishna Center for High Technology Materials Department of Electrical and Computer Engineering University of New Mexico Albuquerque NM USA

ISBN: (纸本)9781424421039

Presently, the state of the art photon detectors for the mid wave infrared (MWIR, 3-5 mum) and long wave infrared (LWIR, 8-12 mum) are based on interband transitions in bulk indium antimonide (InSb) and HgCdTe alloys respectively. Two emerging technologies for next generation sensors that offer enhanced functionality include (i) intersubband detectors based on nanoscale quantum dots and (ii) interband transitions in the Type ii InAs/GaSb strain layer superlattice system. Infrared detectors based on InAs/GaSb strain layer superlattices (SLSs) appear as a promising alternative to the present-day infrared detection technologies. SLSs offer numerous advantages over existing detector technologies, including better uniformity, reduced tunneling currents, normal incidence absorption and suppressed Auger recombination. SLSs are characterized by the broken-gap type-ii alignment. Presently all SLSs detectors are based on a photodiode (p-i-n or n-i-p) design. During the conventional fabrication process of photodiodes, the deep etch through the absorbing region is utilized in order to define the optical area of the detector. Electronic surface states within the energy band gap of SLS are generated, resulting in large surface leakage currents. The suppression of these currents is the most demanding challenge for the SLS technology. We have recently fabricated a high performance InAs/GaSb SLS detector with a P on N polarity and a 320 times 256 MWIR FPA with a noise equivalent temperature difference of 24 mK at 77K. In the quantum dots in a well (DWELL) heterostructure, InAs quantum dots are placed in a thin InGaAs quantum well that is in turn placed in a GaAs matrix. Three-color DWELL detectors, operating at 78K, with spectral response in the MWIR (lambda p1 ~ 4 mum), LWIR (lambda p2 ~ 8 mum) and VLWIR (lambda p3 ~ 23 mum) regime have been fabricated in our group. Recently, we have fabricated the first long wave infrared and two-color quantum dot focal plane array (320times256

关键词： Detectors Quantum dots Photodiodes Superlattices Nanoscale devices Temperature measurement Dark current

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